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27 Apr 1987

Volume 50, Issue 17, pp. 1119-1206

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Multiple quantum well reflection modulator

G. D. Boyd, D. A. B. Miller, D. S. Chemla, S. L. McCall, A. C. Gossard, and J. H. English

Appl. Phys. Lett. 50, 1119 (1987); http://dx.doi.org/10.1063/1.97935 (3 pages) | Cited 65 times

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We demonstrated a quantum‐confined Stark effect electroabsorption modulator consisting of quantum wells of AlGaAs and GaAs on an epitaxial multilayer dielectric mirror, all grown by molecular beam epitaxy. The resulting reflection modulator avoids problems of substrate absorption, and has relatively high contrast ratio (up to ∼8:1 with peak reflectivity of 25% at 853 nm) because the light passes twice through the quantum wells. Reflection modulators are of interest for bidirectional communication systems, in parallel arrays of optical switching and processing devices and for optical interconnects. For the latter there exists the possibility of this device grown on the same substrate alongside a GaAs integrated circuit or even on Si substrates.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
78.20.Jq Electro-optical effects

Very high relaxation oscillation frequency in dry‐etched short cavity GaAs/AlGaAs multiquantum well lasers

Tonao Yuasa, Tomoyuki Yamada, Kiyoshi Asakawa, Makoto Ishii, and Mamoru Uchida

Appl. Phys. Lett. 50, 1122 (1987); http://dx.doi.org/10.1063/1.97936 (3 pages) | Cited 6 times

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Relaxation oscillation frequencies are reported for short cavity GaAs/AlGaAs multiquantum well lasers with dry‐etched facets. Decreased electron and photon lifetimes combined with the high differential gain constant of short cavity lasers yield very high relaxation oscillation frequencies. A peak value of 24 GHz was achieved with a 40‐μm‐long laser, and a linear relationship between frequency and the square root of the output power is observed.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

New technique to detect the GaAs semi‐insulating surface property—cw electro‐optic probing

Y. H. Lo, Z. H. Zhu, C. L. Pan, S. Y. Wang, and S. Wang

Appl. Phys. Lett. 50, 1125 (1987); http://dx.doi.org/10.1063/1.97937 (3 pages) | Cited 3 times

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The continuous wave electro‐optic probing (CWEOP) technique is for the first time used to probe the GaAs Czochralski liquid encapsulated semi‐insulating surface property. From the second derivative profile of the signal, the space‐charge boundary under different bias is clearly observed. The motion of the detected space‐charge boundary with applied bias shows that the substrate surface evolves from a highly compensated semi‐insulating surface to a p− surface with thermal annealing. The CWEOP experiment also concludes that there is no other level except EL2 possessing enough concentration to compensate the background shallow acceptor. Since this technique is extremely sensitive to the GaAs surface property, it can be used to directly probe the surface potential, field, and charge distribution in GaAs material and device.
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73.25.+i Surface conductivity and carrier phenomena
85.30.Tv Field effect devices
73.20.At Surface states, band structure, electron density of states
78.20.Jq Electro-optical effects

Two‐photon absorption in ZnS calculated by an empirical pseudopotential method

W. T. White, J. H. Yee, and W. J. Orvis

Appl. Phys. Lett. 50, 1128 (1987); http://dx.doi.org/10.1063/1.97938 (2 pages)

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Using an empirical pseudopotential method, we have computed the spectrum of two‐photon absorption (2PA) in cubic ZnS. The 2PA coefficients obtained this way agree better with experimental data than 2PA coefficients obtained from simpler band‐structure calculations.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
78.40.Fy Semiconductors

Large volume, high density rf inductively coupled plasma

R. W. Boswell and R. K. Porteous

Appl. Phys. Lett. 50, 1130 (1987); http://dx.doi.org/10.1063/1.98257 (3 pages) | Cited 66 times

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Magnetized argon plasma columns with peak densities of greater than 1018 m−3, lengths of 2 m, and full width half‐maximum diameters of 0.3 m have been created at pressures of 40 mPa (3×10−4 Torr) with input powers of 1.5 kW of 7 MHz rf.
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52.50.Dg Plasma sources
52.80.Pi High-frequency and RF discharges
52.35.Fp Electrostatic waves and oscillations (e.g., ion-acoustic waves)
52.35.Hr Electromagnetic waves (e.g., electron-cyclotron, Whistler, Bernstein, upper hybrid, lower hybrid)

Use of multilayer targets to inject trace elements into laser‐produced plasma

A. Zigler, J. Kolbe, and R. W. Lee

Appl. Phys. Lett. 50, 1133 (1987); http://dx.doi.org/10.1063/1.97939 (2 pages) | Cited 1 time

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The use of multilayer target with predrilled holes to inject trace elements into laser‐produced plasma is presented. The tracer plasma obtained shows a smaller source size and reduced opacity compared to a plasma target. The preparation and alignment of the proposed target are extremely simple.
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52.25.Vy Impurities in plasmas
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Electrical measurement of the formation of the platinum‐rich metal silicides by metal‐silicon reaction

P. Gas, J. Tardy, F. LeGoues, and F. M. d’Heurle

Appl. Phys. Lett. 50, 1135 (1987); http://dx.doi.org/10.1063/1.97940 (3 pages)

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In situ measurements of resistance have been used to study the interaction of Pt with a limited amount of Si deposited in adjacent layers on oxidized Si wafers. One observes in sequence the formation of Pt2Si, Pt12Si5, and Pt3Si, as seen previously by others using time‐sequence annealing. The present method has the advantage of being quite rapid and simple. Changing the heating rate provides one with a measure of the activation energies for several reactions, including, for the first time, values of the apparent activation energy for phases whose formation is dominated by nucleation and growth, rather than by diffusion. A phase transformation was observed during the cooling of Pt3Si. The final Pt3Si phase examined by transmission electron microscopy reveals an interesting Widmanstätten structure. The resistivities of the different phases have been measured: 29, 32, and 53±10 μΩ cm, respectively, in order of increasing Pt content.
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73.61.At Metal and metallic alloys
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.Nq Composition and phase identification

Defects in neutron irradiated SiC

V. Nagesh, J. W. Farmer, R. F. Davis, and H. S. Kong

Appl. Phys. Lett. 50, 1138 (1987); http://dx.doi.org/10.1063/1.97941 (3 pages) | Cited 38 times

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Deep level transient spectroscopy and resistivity measurements have been used to characterize defects in as‐grown and neutron irradiated epitaxially grown 3C‐SiC on Si(100) substrates. The thick epilayers were free of defects; neutron irradiation induced an electron trap with an activation energy of 0.49 eV. The SiC‐Si interface has a large density of defects and dislocations. Most of the irradiation defects are confined to the lower two‐thirds of the band gap. Ninety percent of these defects can be removed by annealing at 350 °C.
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61.80.Hg Neutron radiation effects
68.35.Dv Composition, segregation; defects and impurities
61.72.Bb Theories and models of crystal defects

Observation of Si(111) surface topography changes during Si molecular beam epitaxial growth using microprobe reflection high‐energy electron diffraction

M. Ichikawa and T. Doi

Appl. Phys. Lett. 50, 1141 (1987); http://dx.doi.org/10.1063/1.97942 (3 pages) | Cited 61 times

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Si(111) surface topography changes during Si molecular beam epitaxial growth were observed by reflection electron microscope images using microprobe reflection high‐energy electron diffraction (RHEED). When RHEED intensity oscillations were observed at low substrate temperature (350 °C), it was found that the shape of atomic steps on the substrate was preserved during the growth and the surface topographies changed repeatedly with the period of the oscillations. When almost no oscillations were observed at higher substrate temperature (500 °C), the shape of the atomic steps changed during the growth. These observations provide direct evidence that RHEED intensity oscillations occur as the result of layer‐by‐layer two‐dimensional nucleation growth.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Defect structure of epitaxial CdTe layers grown on {100} and {111}B GaAs and on {111}B CdTe by metalorganic chemical vapor deposition

P. D. Brown, J. E. Hails, G. J. Russell, and J. Woods

Appl. Phys. Lett. 50, 1144 (1987); http://dx.doi.org/10.1063/1.97943 (2 pages) | Cited 21 times

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The technique of cross‐sectional transmission electron microscopy has been used to investigate the defect content of epitaxial CdTe layers grown on {100} and {111}B GaAs and on {111}B CdTe by metalorganic chemical vapor deposition. Growth on {111} oriented substrates invaribly gave rise to layers of {111} orientation and these contained a large number of thin (100–1000 Å) lamella twins lying parallel to the interface. In contrast, layers grown on {100} GaAs substrates were found to exhibit either {100} or {111} orientation. Epilayers with the former alignment contained arrays of misfit dislocations at the interface, whereas those with the latter orientation exhibited a density and distribution of lamella twins which were comparable with those of layers grown on {111} substrates. The presence of these defects in homoepitaxially grown CdTe, where the effects of lattice mismatch do not arise, clearly indicates that twinning in {111}B CdTe epilayers is a growth phenomenon.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.Dv Composition, segregation; defects and impurities

Thermal annealing of semi‐insulating GaAs under controlled arsenic pressure

T. Obokata, T. Sato, and T. Fujii

Appl. Phys. Lett. 50, 1146 (1987); http://dx.doi.org/10.1063/1.97944 (3 pages) | Cited 5 times

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Bulk, undoped, semi‐insulating, liquid encapsulated Czochralski GaAs crystals have been annealed under controlled arsenic pressures, and the uniformities of EL2 concentration and resistivity were investigated. Crystals were grown from different melt compositions from Ga rich to As rich. Arsenic pressure was changed from 0 (vacuum) to 3.4×103 Torr. As a result, it was found that both EL2 concentration and resistivity in the crystal grown from As‐rich melt have the lowest fluctuations around 530 Torr arsenic pressure.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Rs Electrical and magnetic properties related to treatment conditions
72.80.Ey III-V and II-VI semiconductors
71.55.Eq III-V semiconductors

Carbon incorporation in metalorganic chemical vapor deposition (Al,Ga)As films grown on (100), (311)A, and (311)B oriented GaAs substrates

K. Tamamura, J. Ogawa, K. Akimoto, Y. Mori, and C. Kojima

Appl. Phys. Lett. 50, 1149 (1987); http://dx.doi.org/10.1063/1.97945 (3 pages) | Cited 15 times

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The amount of carbon in GaAs and (Al,Ga)As films depends on the orientation of crystals grown by metalorganic chemical vapor deposition. We investigated the relation between the incorporation of carbon and the orientation of crystals using (100), (311)A, and (311)B substrates. The concentration of electrons on (311)B substrates of unintentionally doped films was higher than those of the films on (100) and (311)A substrates. The films grown on (311)B substrates did not show p‐type behavior even when they were grown with a fairly low V/III ratio. The relative intensity of the free‐to‐carbon acceptor luminescence of the films grown on (311)B substrates was smaller than that of films grown on the other substrates. This is consistent with the results of carbon contamination indicated by secondary ion mass spectra. Furthermore, a reduced peak in photoluminescence caused by defects was observed when (311)B substrates were used.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Cycling of defects between trapped negative charge and interface states at the Si‐SiO2 interface

J. M. Sung and S. A. Lyon

Appl. Phys. Lett. 50, 1152 (1987); http://dx.doi.org/10.1063/1.97946 (3 pages) | Cited 13 times

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We have investigated the states produced at the Si‐SiO2 interface by Fowler–Nordheim tunneling and by UV photoinjection at low temperature (90 K). After the interface states are generated, subsequent application of a negative gate bias (5–6 MV/cm) converts them entirely into trapped negative charge. The reverse conversion into interface states occurs if a positive gate bias (5–6 MV/cm) is applied. Cycling of the defects between interface states and trapped negative charge is observed in both experiments. The data strongly suggest that both low‐temperature Fowler–Nordheim tunneling and UV photoinjection generate essentially the same structural defect at the interface between Si and SiO2.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ng Insulators
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Transient response of planar integrated optoelectronic antennas

Alfred P. DeFonzo, Madhuri Jarwala, and Charles Lutz

Appl. Phys. Lett. 50, 1155 (1987); http://dx.doi.org/10.1063/1.97947 (3 pages) | Cited 32 times

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Broadband tapered slot antennas monolithically integrated on ion damaged silicon‐on‐sapphire substrates are driven by picosecond photoconductivity to generate and detect millimeter waves. The time‐dependent electromagnetic impulse response of these transceivers is modeled by relating the antenna structure and the shape of the exciting pulse. The far‐field response is observed to consist of a traveling‐wave component and a standing‐wave component, which is also predicted by the model.
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85.60.-q Optoelectronic devices
84.40.Ba Antennas: theory, components and accessories
84.40.Lj Microwave integrated electronics
42.82.-m Integrated optics

Planar avalanche photodiode with a low‐doped, reduced curvature junction

G. C. Chi, D. J. Muehlner, F. W. Ostermayer, J. M. Freund, R. Pawelek, R. J. McCoy, L. J. Peticolas, and V. D. Mattera

Appl. Phys. Lett. 50, 1158 (1987); http://dx.doi.org/10.1063/1.97948 (3 pages) | Cited 3 times

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A planar InP/InGaAsP avalanche photodiode with a reduced junction curvature and low p‐type doping was fabricated by Be+ implantation through a photoelectrochemically etched InGaAs mask. A uniform gain as high as 15 was obtained without edge or surface breakdown. The device had a separated absorption and multiplication structure grown by vapor phase epitaxy. The n−‐InP top layer and guard ring conventionally used for planar devices were not needed. Two‐dimensional device modeling indicates that the reduced junction curvature and low doping can prevent edge breakdown and greatly suppress the surface field.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.De Semiconductor-device characterization, design, and modeling
73.61.Ey III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Activation characteristics and defect structure in Si‐implanted GaAs‐on‐Si

S. M. Vernon, S. J. Pearton, J. M. Gibson, K. T. Short, and V. E. Haven

Appl. Phys. Lett. 50, 1161 (1987); http://dx.doi.org/10.1063/1.97949 (3 pages) | Cited 15 times

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Undoped metalorganic chemical vapor deposited GaAs layers on Si substrates were implanted with 29Si ions (5×1012 cm−2 dose at 100 keV energy) to form a shallow n‐type region. The net donor activation (74%) and electron mobility (3014 cm2 V−1 s−1) after rapid thermal annealing (900 °C, 10 s) were compared to those obtained for similar implants into bulk GaAs. There was a slight improvement in the proton backscattering yield from the GaAs‐Si interface region after the annealing cycle, consistent with cross‐sectional transmission electron microscopy data showing an alignment of defects in annealed samples.
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61.72.U- Doping and impurity implantation
72.20.Fr Low-field transport and mobility; piezoresistance
81.40.Rs Electrical and magnetic properties related to treatment conditions
68.35.Dv Composition, segregation; defects and impurities

Growth and characterization of a delta‐function doping layer in Si

H. P. Zeindl, T. Wegehaupt, I. Eisele, H. Oppolzer, H. Reisinger, G. Tempel, and F. Koch

Appl. Phys. Lett. 50, 1164 (1987); http://dx.doi.org/10.1063/1.97950 (3 pages) | Cited 76 times

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We present a procedure whereby a sheet of donor atoms is incorporated in (100) Si during molecular beam epitaxial growth. Analysis by secondary ion mass spectroscopy and transmission electron microscopy shows that the width of such δ‐function doping layers is only a few lattice planes. Tunneling spectroscopy and transport measurements give evidence for quantum confinement of the electronic charge in the layer and thus confirm the narrow width.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Gk Tunneling

Superior characteristics of thermal oxide layers grown on amorphous silicon films

Ching‐Yuan Wu and Chiou‐Feng Chen

Appl. Phys. Lett. 50, 1167 (1987); http://dx.doi.org/10.1063/1.97951 (3 pages) | Cited 1 time

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Thermal oxide layers grown on polycrystalline and amorphous silicon films have been analyzed and compared by using scanning electron microscope (SEM) photographs, ramp‐voltage‐stressed current‐voltage (I‐V) measurements, and constant current stress. The asperity effect observed from SEM photographs and the ramp‐voltage‐stressed I‐V technique is found to be less serious for the thermal oxides grown on the amorphous silicon films, resulting in a smaller leakage current and a larger electron fluence endurance. These superior characteristics enable the amorphous silicon to be a good candidate for further scaled nonvolatile memory device applications.
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73.61.Ng Insulators
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Fq High-field and nonlinear effects
68.55.-a Thin film structure and morphology

Ga0.47In0.53As/InP superlattice avalanche photodiode grown by metalorganic chemical vapor deposition

F. Beltram, J. Allam, F. Capasso, U. Koren, and B. Miller

Appl. Phys. Lett. 50, 1170 (1987); http://dx.doi.org/10.1063/1.97952 (3 pages) | Cited 3 times

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We report the operation of the first Ga0.47In0.53As/InP superlattice avalanche photodiode grown by metalorganic chemical vapor deposition. The undoped region of the p‐i‐n structure consists of 100 periods of alternating InP and Ga0.47In0.53As layers 100 A˚ thick with no intentional doping. dc multiplication higher than 20 and high‐speed response with full width at half‐maximum of 200 ps have been measured.
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85.60.Dw Photodiodes; phototransistors; photoresistors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Pz Photoconduction and photovoltaic effects
85.30.De Semiconductor-device characterization, design, and modeling

Investigation by Raman scattering of the properties of III‐V compound semiconductors at high temperature

J. R. Shealy and G. W. Wicks

Appl. Phys. Lett. 50, 1173 (1987); http://dx.doi.org/10.1063/1.97953 (3 pages) | Cited 7 times

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The properties of several III‐V compound semiconductor alloys, namely, GaAs, AlGaAs, and GaInP, have been studied at high temperatures using Raman spectroscopy. The temperature range used for these measurements includes the thermal dissociation temperatures for GaAs and GaInP in vacuum. The Raman spectra taken from the thermally dissociated surface yield information on the crystallinity (or lack of it) after decomposition in vacuum occurs. These data establish the feasibility to acquire Raman spectra of these materials and deduce their alloy composition and layer thickness during epitaxial growth. We have determined the phonon frequency shifts with temperature, and found that the linewidth broadening of the Raman peaks at high temperatures (700 °C) is minimal.
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78.30.Fs III-V and II-VI semiconductors
68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification
63.20.D- Phonon states and bands, normal modes, and phonon dispersion

Demonstration of dual gain mechanism in an InGaAs/InAlAs superlattice photodiode

W‐Q. Li, Pallab K. Bhattacharya, and F‐Y. Juang

Appl. Phys. Lett. 50, 1176 (1987); http://dx.doi.org/10.1063/1.97902 (3 pages) | Cited 1 time

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A high‐gain photodiode in which the internal gain can result from either potential barrier lowering or mass filtering action, depending on device geometry and bias conditions, is proposed and demonstrated. The photodiode structure is similar to a modulated barrier diode and uses In0.53Ga0.47As and InGaAs/InAlAs superlattice absorption regions. The superlattice helps to reduce the dark current and aids in mass filtering. The devices reported here were made with multilayered InP‐based materials grown by molecular beam epitaxy and exhibit responsivity as high as 1000 A/W.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Hi Surface barrier, boundary, and point contact devices
73.50.Pz Photoconduction and photovoltaic effects
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Ohmic contacts to n‐type GaAs using high‐temperature rapid thermal annealing for self‐aligned processing

C. L. Chen, L. J. Mahoney, J. D. Woodhouse, M. C. Finn, and P. M. Nitishin

Appl. Phys. Lett. 50, 1179 (1987); http://dx.doi.org/10.1063/1.97903 (3 pages) | Cited 3 times

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We have formed Ge/Pd/W/Au and Ge/Mo/W/Au ohmic contacts to n‐type GaAs by using a high‐temperature rapid thermal annealing technique. The annealing schedule is compatible with that used for ion implantation activation, and the contact resistances (mid 10−6 Ω cm2) achieved are slightly higher than those for the commonly used Ni/Ge/Au alloyed contact. The Ge/Pd/W/Au contact maintains a good surface morphology and can be used as the implantation mask in self‐aligned processes for devices such as heterojunction bipolar transistors.
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73.40.Vz Semiconductor-metal-semiconductor structures
68.35.B- Structure of clean surfaces (and surface reconstruction)
85.30.Pq Bipolar transistors

Nonlinear absorption in AlGaAs/GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition

H. C. Lee, A. Hariz, P. D. Dapkus, A. Kost, M. Kawase, and E. Garmire

Appl. Phys. Lett. 50, 1182 (1987); http://dx.doi.org/10.1063/1.97904 (3 pages) | Cited 4 times

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We report the study of growth conditions for achieving the sharp exciton resonances and low intensity saturation of these resonances in AlGaAs‐GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition. Low growth temperature is necessary to observe this sharp resonance feature at room temperature. The optimal growth conditions are a tradeoff between the high temperatures required for high quality AlGaAs and low temperatures required for high‐purity GaAs. A strong optical saturation of the excitonic absorption has been observed. A saturation density as low as 250 W/cm2 is reported.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Influence of a constant current on Raman spectra of high mobility superlattices

K. Kempa

Appl. Phys. Lett. 50, 1185 (1987); http://dx.doi.org/10.1063/1.97905 (3 pages) | Cited 9 times

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A constant current in a semiconductor high mobility superlattice is shown to lead to a shift and broadening of the intrasubband plasmon loss peaks in the Raman spectrum. By a model calculation for GaAs‐AlGaAs we find that the simple homogeneous drift approximation is not valid in the high current regime where the drift velocity of electrons is of the order of the Fermi velocity.
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73.50.Mx High-frequency effects; plasma effects
78.30.Fs III-V and II-VI semiconductors
73.50.Fq High-field and nonlinear effects
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Effect of oxide field on hot‐carrier‐induced degradation of metal‐oxide‐semiconductor field‐effect transistors

J. Y. Choi, P. K. Ko, and C. Hu

Appl. Phys. Lett. 50, 1188 (1987); http://dx.doi.org/10.1063/1.97906 (3 pages) | Cited 6 times

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While the substrate current is a useful tool for extrapolating metal‐oxide‐semiconductor field‐effect transistor lifetime from accelerated stressing data, the substrate current can vary significantly during a constant‐voltage stress test. We have studied device degradation using a constant‐field method. The critical electron energy for device degradation is found to be 3–6 eV, depending on the oxide electric field. These values are 50% higher than those reported elsewhere.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
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