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27 Apr 1987

Volume 50, Issue 17, pp. 1119-1206

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Quantitative theory of optical properties of HgTe‐CdTe superlattices

A. Zoryk and M. Jaros

Appl. Phys. Lett. 50, 1191 (1987); http://dx.doi.org/10.1063/1.97907 (3 pages) | Cited 5 times

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We have performed full‐scale calculations of the optical properties of (001) HgTe‐CdTe superlattices, of period ∼60 Å. We present the superlattice band gaps and oscillator strengths for the principal transitions as a function of HgTe layer width, in good agreement with experiment. The valence‐band offset is 370 meV. Our results highlight the importance of the degree of localization of interface states in determining the optical properties of the superlattice.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Growth of high‐quality GaAs using trimethylgallium and diethylarsine

R. Bhat, M. A. Koza, and B. J. Skromme

Appl. Phys. Lett. 50, 1194 (1987); http://dx.doi.org/10.1063/1.97908 (3 pages) | Cited 42 times

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In this letter we report the growth of high‐quality gallium arsenide using trimethylgallium and diethylarsine. The epitaxial layers had excellent morphology, an n‐type background free‐carrier concentration as low as 3×1014 cm−3 and a liquid nitrogen temperature mobility as high as 64 600 cm2/V s. The low‐temperature (2 K) photoluminescence spectrum has well‐resolved excitonic peaks, confirming the high quality of the material.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
73.61.Ey III-V semiconductors

Survey of defect‐mediated recombination lifetimes in GaAs epilayers grown by different methods

E. Yablonovitch, R. Bhat, J. P. Harbison, and R. A. Logan

Appl. Phys. Lett. 50, 1197 (1987); http://dx.doi.org/10.1063/1.97909 (3 pages) | Cited 17 times

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In GaAs double‐heterostructure potential wells at moderate injection levels, surface, radiative, and Auger recombination can all be suppressed. This leaves only Shockley–Read–Hall recombination which is mediated by defects in the crystallographic structure. In a survey of organometallic chemical vapor deposition (OMCVD), liquid phase epitaxy, and molecular beam epitaxy, we find that all the growth methods produce better than expected material quality with recombination lifetimes at room temperature as high as ∼2 μs observed in the best OMCVD material. If this lifetime were to be maintained during device processing, then material quality would not be the limiting factor in the implementation of certain novel device concepts.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors
71.55.Eq III-V semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Characterization of cesium diffusion in silicon dioxide films using backscattering spectrometry

Bruce J. Fishbein and James D. Plummer

Appl. Phys. Lett. 50, 1200 (1987); http://dx.doi.org/10.1063/1.97910 (3 pages) | Cited 6 times

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The diffusion of ion‐implanted cesium in thermally grown SiO2 has been examined in the temperature range 700–1000 °C using Rutherford backscattering spectrometry (RBS). Silicon samples were oxidized and implanted with 5×1014 cm−2 133Cs at 145 keV and then annealed in nitrogen using a rapid thermal system for times ranging from several seconds to several hours. Cesium concentration profiles were measured using RBS for each anneal time and temperature. By observing the decay in the peak cesium concentration as a function of anneal time, a diffusivity of DCs =0.50 exp(−2.9eV/kT) cm2/s has been obtained. Other diffusion effects including cesium pile‐up at the oxide interfaces and outdiffusion of cesium into the ambient have been studied qualitatively.
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66.30.J- Diffusion of impurities
61.72.up Other materials
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
68.35.Fx Diffusion; interface formation

Thin‐film photoconductor‐electroluminescent memory device with a high brightness and a wide and stable hysteresis

P. Thioulouse, C. Gonzalez, and I. Solomon

Appl. Phys. Lett. 50, 1203 (1987); http://dx.doi.org/10.1063/1.97911 (3 pages) | Cited 3 times

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An improved thin‐film photoconductor‐electroluminescent memory and display device is described, which integrates an optimized ZnS:Mn active layer, Ta2O5 insulating films, and a‐Si1−xCx@B:H photoconducting material. The performance with a 1‐kHz sinewave excitation is an hysteresis width of ≂25 V, an on luminance of ≂650 cd/m2, and an off luminance of ≂0.1 cd/m2. The memory effect shows no degradation over an estimated operating time of 2000 h. The electrical on switching time is shorter than 10 μs. The performance of a full‐size panel based on this structure is briefly discussed.
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85.60.Pg Display systems
78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
73.50.Pz Photoconduction and photovoltaic effects
FREE

Erratum: Experimental observation of polarization instability in a birefringent optical fiber [Appl. Phys. Lett. 49, 1224 (1986)]

S. Trillo, S. Wabnitz, R. H. Stolen, G. Assanto, C. T. Seaton, and G. I. Stegeman

Appl. Phys. Lett. 50, 1206 (1987); http://dx.doi.org/10.1063/1.98269 (1 page) | Cited 1 time

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Abstract Unavailable
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42.81.Gs Birefringence, polarization
42.81.Dp Propagation, scattering, and losses; solitons
42.65.Pc Optical bistability, multistability, and switching, including local field effects
99.10.Cd Errata
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