An improved thin‐film photoconductor‐electroluminescent memory and display device is described, which integrates an optimized ZnS:Mn active layer, Ta2
insulating films, and a
H photoconducting material. The performance with a 1‐kHz sinewave excitation is an hysteresis width of ≂25 V, an on
luminance of ≂650 cd/m2
, and an off
luminance of ≂0.1 cd/m2
. The memory effect shows no degradation over an estimated operating time of 2000 h. The electrical on
switching time is shorter than 10 μs. The performance of a full‐size panel based on this structure is briefly discussed.