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4 May 1987

Volume 50, Issue 18, pp. 1213-1294

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Pulse shortening of actively mode‐locked diode lasers by wavelength tuning

M. Serenyi, J. Kuhl, and E. O. Göbel

Appl. Phys. Lett. 50, 1213 (1987); http://dx.doi.org/10.1063/1.97912 (3 pages) | Cited 6 times

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The pulse width of an actively mode‐locked GaAs/AlGaAs laser diode in an external cavity configuration is continuously decreased from 22 to 7 ps by tuning the laser wavelength from the gain maximum close to the high‐energy cutoff of the gain profile. This wavelength‐dependent pulse shortening can be explained by the dynamics of the excited electron‐hole plasma.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Fabrication and characterization of optical waveguides in KTiOPO4

John D. Bierlein, August Ferretti, Lothar H. Brixner, and William Y. Hsu

Appl. Phys. Lett. 50, 1216 (1987); http://dx.doi.org/10.1063/1.97913 (3 pages) | Cited 80 times

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Planar and channel optical waveguides have been fabricated in KTiOPO4 (KTP) using ion exchange processes. The exchange kinetics are diffusion limited and depend strongly on composition and surface orientation. Increases in surface refractive index of up to 0.23 and waveguide thicknesses of up to 15 μm have been observed. A simple waveguide modulator has been fabricated which shows electro‐optic r coefficients in the waveguide region to be similar to bulk KTP.
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42.79.Gn Optical waveguides and couplers
78.20.Jq Electro-optical effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.82.-m Integrated optics

Diode lasers with cylindrical mirror facets and reduced beam divergence

J. N. Walpole, Z. L. Liau, L. J. Missaggia, and D. Yap

Appl. Phys. Lett. 50, 1219 (1987); http://dx.doi.org/10.1063/1.97914 (3 pages) | Cited 9 times

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Using chemical etching and mass transport, we have monolithically integrated cylindrical lenses at one of the ends of buried‐heterostructure GaInAsP/InP diode laser cavities. The lenses are designed to provide reflective feedback for low‐threshold current (as low as 25 mA), as well as reduction of beam width in the lateral direction (as small as 9.2°).
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics

Carbon monoxide laser excited by radio‐frequency discharge

G. N. Pearson and D. R. Hall

Appl. Phys. Lett. 50, 1222 (1987); http://dx.doi.org/10.1063/1.97915 (3 pages) | Cited 6 times

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We report the operation of a carbon monoxide waveguide laser excited by a transverse radio‐frequency discharge at 145 MHz. Single mode output powers up to 10 W with efficiencies up to 6.5% have been obtained from a sealed off device having a square section alumina (Al2O3) waveguide and an electrode temperature ≥−23 °C.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
52.80.Pi High-frequency and RF discharges

Visible, room‐temperature, surface‐emitting laser using an epitaxial Fabry–Perot resonator with AlGaAs/AlAs quarter‐wave high reflectors and AlGaAs/GaAs multiple quantum wells

P. L. Gourley and T. J. Drummond

Appl. Phys. Lett. 50, 1225 (1987); http://dx.doi.org/10.1063/1.97916 (3 pages) | Cited 35 times

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We report operation of a new surface‐emitting laser. This epitaxial laser is fabricated with molecular beam epitaxy by the growth of quarter‐wave high reflectors of AlAs/Al0.4Ga0.6As (710 Å/630 Å) which surround a 4.5‐μm‐thick multiple quantum well of GaAs/Al0.4Ga0.6As (100 Å/200 Å). We characterize the structure with cw spectroscopy (absorption, reflection, and luminescence) and investigate stimulated emission spectra under pulsed photopumping. When photopumped, the structure lases in its as‐grown condition without need of substrate removal, cleaving, or heatsinking. The lasing wavelength is as short as 7400 Å and can be tuned to as long as 8400 Å by positioning the pump spot to different regions across the wafer. The pulsed threshold irradiance has a very weak temperature dependence varying from 6×105 W/cm2 at 4.2 K to 1.6×106 W/cm2 at 295 K.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.45.+h Stimulated emission
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Electro‐optic measurement of standing waves in a GaAs coplanar waveguide

Z. H. Zhu, C. L. Pan, Y. H. Lo, M. C. Wu, S. Wang, B. H. Kolner, and S. Y. Wang

Appl. Phys. Lett. 50, 1228 (1987); http://dx.doi.org/10.1063/1.97917 (3 pages) | Cited 7 times

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We have successfully measured, for the first time, standing waves in a GaAs coplanar waveguide at frequencies of 8.2107 and 12.310 GHz by using harmonic‐mixing electro‐optic probing. The technique is nondestructive and has great potential in expanding the measuring frequency band to millimeter wave. This letter describes the principle of the technique, the experimental setup, and the measurement results.
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78.20.Jq Electro-optical effects
07.50.-e Electrical and electronic instruments and components
84.40.Az Waveguides, transmission lines, striplines
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Wavelength control of iron/nickel composition in laser induced chemical vapor deposited films

J. V. Armstrong, A. A. Burk, J. M. D. Coey, and K. Moorjani

Appl. Phys. Lett. 50, 1231 (1987); http://dx.doi.org/10.1063/1.97918 (3 pages) | Cited 8 times

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It is shown that the composition of metallic deposits obtained by photodecomposition of a mixture of ferrocene and nickelocene vapor can be varied by selecting the laser wavelength to match features in the absorption spectra. Iron/nickel ratios of 92:8 and 65:35 are obtained by using 193 nm and 337 nm laser lines, respectively.
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68.55.Nq Composition and phase identification
68.55.-a Thin film structure and morphology
79.20.Ds Laser-beam impact phenomena
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Boron heavy doping for Si molecular beam epitaxy using a HBO2 source

Toru Tatsumi, Hiroyuki Hirayama, and Naoaki Aizaki

Appl. Phys. Lett. 50, 1234 (1987); http://dx.doi.org/10.1063/1.97919 (3 pages) | Cited 35 times

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Boron doping with a high carrier concentration has been realized in Si molecular beam epitaxy (MBE) using a HBO2 source with the usual Knudsen cell. Maximum carrier concentration has reached 6×1020 cm−3 at crucible temperatures of 900 °C. From a comparison between activation energy for vapor pressure and carrier concentration dependence on crucible temperature, it was concluded that boron evaporated in the form of HBO2 (g) from the HBO2 source. The boron profile achieved by Knudsen cell shutter opening and closing was sufficiently steep. The oxygen concentration in the epitaxial film depended on the growth temperature. Above 750 °C, the oxygen concentration decreased to under the detection limit of secondary ion mass spectroscopy, 1018 cm−3. These results make it possible to use boron as the p‐type dopant in silicon MBE without using ion imbedding or a very high temperature crucible.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Improved electron mobility by AlAs spacer in one‐sided selectively doped AlxGa1−xAs/GaAs multiple quantum well heterostructures

K. Ploog, H. Fronius, and A. Fischer

Appl. Phys. Lett. 50, 1237 (1987); http://dx.doi.org/10.1063/1.97920 (3 pages) | Cited 3 times

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One‐sided selectively Si‐doped n‐AlxGa1−xAs/GaAs multiple quantum well heterostructures were grown by molecular beam epitaxy, which exhibit an enhanced mobility of more than 6×105 cm2/V s at 4 K using a binary AlAs spacer as narrow as 4.5 nm. In this heterostructure the two‐dimensional electron gas is formed at the all‐binary GaAs/AlAs interface of the constituent asymmetric GaAs quantum wells. The periodic sequence of electrically not coupled electron channels of high mobility with a spacing of about 133 nm is attractive for fundamental investigations; e.g., coupled‐layer plasmon modes have been studied which give important information on the carrier density profile.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
72.80.Ey III-V and II-VI semiconductors

Electrical effects of surface and deep states induced in n‐type silicon by rapid thermal processing

Wale‐Oluseyi Adekoya, Jean‐Claude Muller, and Paul Siffert

Appl. Phys. Lett. 50, 1240 (1987); http://dx.doi.org/10.1063/1.97921 (3 pages) | Cited 6 times

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Induced defects in Czochralski‐grown n‐type 〈111〉 1–5 Ω cm silicon wafers due to high‐temperature (800 °C/10 s; cooling rate≂100 °C/s) rapid thermal annealing (RTA) have been studied using deep level transient spectroscopy. The samples processed at 1000 °C and above showed a defect continuum containing at least an electron trap at E(0.58 eV) with a concentration ≂1015 cm−3. The electrical activity of the defects substantially degraded the current/voltage and capacitance/voltage characteristics of the Schottky diodes made from the processed samples with a barrier height reduction from 0.85 V at 800 °C/900 °C to 0.32 V at 1100 °C. However, a further RTA treatment at 650 °C for 60 s resulted in a complete restoration of these characteristics and no trap was recorded in the deep level transient spectroscopy spectrum. This degradation, which was not observed in oxide‐encapsulated samples processed in the same temperature range, is considered to be due to impurity contamination during RTA processing which is enhanced at high temperatures (≂1000 °C) leading to a high density of surface states.
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73.20.At Surface states, band structure, electron density of states
73.30.+y Surface double layers, Schottky barriers, and work functions
81.40.Rs Electrical and magnetic properties related to treatment conditions
78.30.Er Solid metals and alloys
78.40.Kc Metals, semimetals, and alloys

High‐temperature observation of heavy‐hole and light‐hole excitons in InGaAs/InP multiple quantum well structures grown by metalorganic molecular beam epitaxy

Yoshihiro Kawaguchi and Hajime Asahi

Appl. Phys. Lett. 50, 1243 (1987); http://dx.doi.org/10.1063/1.97922 (3 pages) | Cited 27 times

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Heavy‐hole (hh) and light‐hole (lh) excitons were clearly observed at temperatures as high as 450 K in the optical absorption spectrum for the 1.5 μm wavelength range InGaAs/InP multiple quantum well (MQW) structures for the first time. Temperature dependence of the hh excitonic half‐width was found to be weaker than that for InGaAs/InAlAs MQW structures. The MQW wafers were grown on (100) InP substrates by metalorganic molecular beam epitaxy (MOMBE) using trimethylindium, triethylgallium, arsine, and phosphine. Intense 77 K photoluminescence (PL) emission was also observed from the quantum well with thickness as narrow as 10 Å. The full width at half‐maximum of 77 K PL spectrum for the 60 Å well as narrow as 11.7 meV and the double peak structures induced by the monolayer thickness fluctuation were observed in the thinner wells.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors

Heterojunction double‐barrier diodes for logic applications

H. C. Liu and D. D. Coon

Appl. Phys. Lett. 50, 1246 (1987); http://dx.doi.org/10.1063/1.97923 (3 pages) | Cited 24 times

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The use of heterojunction double‐barrier diodes in logic circuits is examined. Switching time limitations are estimated based on circuit considerations and device architecture. Dispersion effects involving quantum mechanical resonant tunneling time delay are also included. These theoretical considerations indicate that picosecond or subpicosecond switching times might be achievable with appropriately designed AlxGa1−xAs/GaAs devices.
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84.30.Sk Pulse and digital circuits
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Hi Surface barrier, boundary, and point contact devices
73.40.Gk Tunneling

Temperature dependence of viscosity of molten GaAs by an oscillating cup method

Koichi Kakimoto and Taketoshi Hibiya

Appl. Phys. Lett. 50, 1249 (1987); http://dx.doi.org/10.1063/1.97924 (2 pages) | Cited 6 times

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A viscosity measurement system for molten semiconductors has been established by adopting an oscillating cup method. The temperature dependence of viscosity for molten GaAs in the temperature range from near the melting point up to 1480 °C was obtained. The viscosity and activation energy of molten GaAs showed a remarkable increase in the vicinity of the melting point (1238 °C). The viscosity of molten GaAs decreases with an increase in temperature above 1320 °C, with an activation energy of about 0.28 eV.
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66.20.-d Viscosity of liquids; diffusive momentum transport
81.10.Fq Growth from melts; zone melting and refining
61.25.Mv Liquid metals and alloys

Monte Carlo algorithm for hot phonons in polar semiconductors

P. Lugli, C. Jacoboni, L. Reggiani, and P. Kocevar

Appl. Phys. Lett. 50, 1251 (1987); http://dx.doi.org/10.1063/1.97925 (3 pages) | Cited 39 times

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We present a novel ensemble Monte Carlo procedure for the study of electron and phonon dynamics during the relaxation of photoexcited hot carriers. For the first time hot‐electron and hot‐phonon effects are included together in the same Monte Carlo simulation. The algorithm is applied to a simplified model of GaAs, consisting of one‐type carriers (electrons) in a two‐valley system (L and Γ valleys). The buildup of the phonon population on a picosecond scale is monitored, in parallel with the cooling of the electron distribution. As expected, the presence of nonequilibrium phonons is found to slow down the electron relaxation.
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72.20.Dp General theory, scattering mechanisms
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
63.20.K- Phonon interactions
78.30.Fs III-V and II-VI semiconductors

Synchrotron radiation‐induced etching of a carbon film in an oxygen gas

Hakaru Kyuragi and Tsuneo Urisu

Appl. Phys. Lett. 50, 1254 (1987); http://dx.doi.org/10.1063/1.97926 (3 pages) | Cited 22 times

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It was found that a carbon film in an oxygen gas is etched by irradiation of synchrotron radiation (SR). The etching rate was about 3 nm/min for a 100‐mA ring current in an oxygen pressure of 26.7 Pa, and it increased in proportion to the square root of the oxygen pressure and the incident SR beam power. An analysis of the etched pattern indicates that the surface excitation induced by SR irradiation plays the predominant role in the described etching reaction.
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81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.50.-m Photochemistry
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Evidence for Si diffusion through epitaxial NiSi2 grown on Si(111)

V. Hinkel, L. Sorba, H. Haak, K. Horn, and W. Braun

Appl. Phys. Lett. 50, 1257 (1987); http://dx.doi.org/10.1063/1.97927 (3 pages) | Cited 28 times

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Epitaxial nickel silicide films grown on Si(111)‐(2×1) surfaces have been studied by valence and core level photoemission using synchrotron radiation. The different chemical binding states of the nickel atoms were clearly identified in the valence‐band spectra, and our data demonstrate that NiSi2 forms at lower temperatures than previously assumed. The growth of these epitaxial layers is always accompanied by the outdiffusion of silicon atoms, which exhibit an epitaxial arrangement on the silicide surface. By means of depth profiling using tunable synchrotron radiation we were able to determine the thickness of the topmost silicon layer.
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66.30.J- Diffusion of impurities
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Measurement of hole velocity in n‐type InGaAs

P. Hill, J. Schlafer, W. Powazinik, M. Urban, E. Eichen, and R. Olshansky

Appl. Phys. Lett. 50, 1260 (1987); http://dx.doi.org/10.1063/1.97877 (3 pages) | Cited 27 times

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Hole drift velocities in n‐type In0.53Ga0.47As have been determined experimentally for the first time. Measured values of the frequency response of transit‐time‐limited InGaAs p‐i‐n photodiodes were fit with the theoretical response using hole velocity as the only free parameter. Measurements over field strengths from 54 to 108 kV/cm showed the drift velocity to be relatively constant at (4.8±0.2) 106 cm/s, indicating that velocity saturation has occurred at field levels below 54 kV/cm.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Ht High-field and nonlinear effects
85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.De Semiconductor-device characterization, design, and modeling

Resonant tunneling via X‐point states in AlAs‐GaAs‐AlAs heterostructures

E. E. Mendez, W. I. Wang, E. Calleja, and C. E. T. Gonçalves da Silva

Appl. Phys. Lett. 50, 1263 (1987); http://dx.doi.org/10.1063/1.97878 (3 pages) | Cited 78 times

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We have observed resonant tunneling of electrons in AlAs‐GaAs‐AlAs heterostructures, via a quantum state localized in AlAs. The resonance manifests itself as a distinct feature in the current‐voltage characteristics, at 4 K. The confined energy state arises from a potential profile derived from the X point of the Brillouin zone, in which AlAs behaves as a quantum well and GaAs as a barrier.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors

Stimulated emission from ultrathin InAs/GaAs quantum well heterostructures grown by atomic layer epitaxy

M. A. Tischler, N. G. Anderson, R. M. Kolbas, and S. M. Bedair

Appl. Phys. Lett. 50, 1266 (1987); http://dx.doi.org/10.1063/1.97879 (3 pages) | Cited 18 times

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We report the first observation of stimulated emission (16 K) in material grown by atomic layer epitaxy (ALE). The active region of our laser structure consists of six strained InAs quantum wells (6.6 Å thick, 7.4% strain) separated by 500 Å of GaAs, which makes these the thinnest and most highly strained quantum wells ever reported to support stimulated emission. These results demonstrate that the ALE process can be used to grow laser quality material with highly reproducible layer thickness.
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78.45.+h Stimulated emission
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
42.55.Px Semiconductor lasers; laser diodes

Above barrier doublets in GaAs/AlxGa1−xAs superlattices

J. J. Song, Y. S. Yoon, P. S. Jung, A. Fedotowsky, J. N. Schulman, C. W. Tu, J. M. Brown, D. Huang, and H. Morkoç

Appl. Phys. Lett. 50, 1269 (1987); http://dx.doi.org/10.1063/1.97880 (3 pages) | Cited 18 times

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Doublets from optical transitions with energies greater than the barrier energy gap were observed by photoluminescence excitation spectroscopy in a series of GaAs/AlxGa1−xAs superlattices. The well width and the aluminum concentration in the barrier regions were fixed at 150 Å and 22%, respectively. The barrier widths ranged from 70 to 180 Å. The doublets arise from transitions between the first unconfined heavy‐hole and conduction subbands. The separation of the doublet is found to be a sensitive function of the barrier width. It corresponds to the energy difference between the transition at the Brillouin zone center and at the Brillouin zone boundary along the superlattice growth direction. Good agreement was found between the experimental data and theoretical calculations. The sensitivity of the energy splitting to the width of the barrier provides a useful analytical tool in determining this quantity, in much the same way that the confined transition energies relate to the well width.
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78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Interdiffusion behavior of HgTe‐CdTe junctions

Mei‐Fan S. Tang and David A. Stevenson

Appl. Phys. Lett. 50, 1272 (1987); http://dx.doi.org/10.1063/1.97881 (3 pages) | Cited 23 times

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Interdiffusion coefficients (math) were measured from 600 to 300 °C for HgTe‐CdTe diffusion couples. The influence of the binary composition, temperature, and Hg overpressure on math has been established. Significant differences have been found in the behavior of math in two temperature regions. A dual mechanism is proposed for diffusion at higher temperatures (T≥450 °C), with a vacancy mechanism and an interstitial mechanism dominating at low and high x value regions, respectively, and an interstitial mechanism predominating at lower temperatures. The proposed model is confirmed by electrical property, tracer diffusion, and theoretical studies, and provides a basis for predicting the interdiffusion behavior at even lower temperatures.
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68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
61.72.jd Vacancies
61.72.jj Interstitials
66.30.Dn Theory of diffusion and ionic conduction in solids

Modeling UV response of rear‐surface sensitized charge‐coupled devices

M. C. Peckerar, J. T. Bosiers, D. McCarthy, N. S. Saks, and D. J. Michels

Appl. Phys. Lett. 50, 1275 (1987); http://dx.doi.org/10.1063/1.97882 (3 pages) | Cited 3 times

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Rear‐surface illuminated charge‐coupled devices (CCD’s) are typically insensitive to radiation whose depth of penetration is less than 1000 Å. This is due to the presence of immobile charges either in the rear‐surface native oxide or at the native oxide/semiconductor interface. These fixed charges channel signal charge away from the front‐surface confinement minima. The result is a loss of detective quantum efficiency (DQE), which is defined as the number of signal charges actually collected divided by the number produced. The CCD can be sensitized to shallow‐penetrating radiation through the use of ion implantation techniques. To model the sensitization process, four factors must be accounted for. They are: the extent of the rear‐surface depletion created by the fixed charge, Debye length spreading of the mobile charge background in the semiconductor, the position of the implant maximum, and the gradient of the active implant charge before the implant maximum is reached. By judicious manipulation of these factors DQE’s as high as 20% (uncorrected for UV reflection loss) have been obtained at 1216 Å.
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85.60.-q Optoelectronic devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

O+ implantation and annealing in n‐type InAlAs

Wai Lee and Clifton G. Fonstad

Appl. Phys. Lett. 50, 1278 (1987); http://dx.doi.org/10.1063/1.97883 (3 pages) | Cited 8 times

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The dependence of the electrical properties of oxygen‐implanted p+‐n In0.52Al0.48As diodes on annealing temperatures has been studied. Current‐voltage and capacitance‐voltage measurements reveal that a semi‐insulating layer is created by oxygen implantation in n‐InAlAs which is found to be stable up to at least 720 °C. The presence of this semi‐insulating layer significantly reduces the junction capacitance of the diode and the diode current at high bias levels.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
61.72.U- Doping and impurity implantation
72.80.Ey III-V and II-VI semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Equivalence between resonant tunneling and sequential tunneling in double‐barrier diodes

T. Weil and B. Vinter

Appl. Phys. Lett. 50, 1281 (1987); http://dx.doi.org/10.1063/1.97884 (3 pages) | Cited 138 times

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Resonant tunneling is known to lead to negative differential resistance in double‐barrier diodes. Sequential tunneling has been proposed by S. Luryi [Appl. Phys. Lett. 47, 490 (1985)] as an alternative mechanism for the negative differential resistance observed. We show that the two interpretations lead to the same predictions for the dc current.
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73.40.Gk Tunneling
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Magnetic field sensor for cryogenic applications

K. Heinemann and K. Bärner

Appl. Phys. Lett. 50, 1284 (1987); http://dx.doi.org/10.1063/1.97885 (2 pages)

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A new Hall‐signal probe, based on amorphous (Fe100−xMnx)75P15C10 compounds, is described. The device is suitable for magnetic fields up to 1.5 T and the Hall coefficient is independent of temperature in the range 4.2 K≤T≤300 K.
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07.55.-w Magnetic instruments and components
07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment
75.50.Kj Amorphous and quasicrystalline magnetic materials
72.20.My Galvanomagnetic and other magnetotransport effects
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