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4 May 1987

Volume 50, Issue 18, pp. 1213-1294

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Wavelength dependence of the excimer laser etching characteristics of a polymeric resist

G. M. Davis and M. C. Gower

Appl. Phys. Lett. 50, 1286 (1987); http://dx.doi.org/10.1063/1.97886 (3 pages) | Cited 5 times

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The direct etching by excimer laser light of thin films of a polymeric resist, PMTM, has been studied at wavelengths of 157, 193, 222, and 248 nm. The energy absorbed per unit ablated volume near the etching threshold fluence indicates that a wavelength‐dependent reaction mechanism causes ablation of the film. When laser wavelengths shorter than 222 nm are used at fluences close to threshold no evidence of heating of the polymer is observed. At 222 nm we observe thermal effects which cause melting and flow of the polymer while at 248 nm trapped pockets of volatile gas, which can subsequently explode, appear to be formed below the (molten) surface.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
79.20.Ds Laser-beam impact phenomena

Nonlocal electrical properties in mesoscopic devices

C. P. Umbach, P. Santhanam, C. van Haesendonck, and R. A. Webb

Appl. Phys. Lett. 50, 1289 (1987); http://dx.doi.org/10.1063/1.97887 (3 pages) | Cited 38 times

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The magnetoconductance of nominally identical, 2‐μm‐long, Au lines has been measured. A 0.7‐μm‐diam loop was attached to the end of one of the lines outside the probes in such a way that classically no current would flow through it. As expected, the line by itself showed only aperiodic conductance fluctuations. In contrast, the line with the attached loop also exhibited h/e periodic oscillations. The periodic oscillations are due to the quantum interference of electrons diffusing around the loop. These results clearly demonstrate that the voltage measured between contact probes separated by a distance on the order of an electron phase coherence length is strongly influenced by regions outside the contact probes.
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72.15.Gd Galvanomagnetic and other magnetotransport effects
72.15.Eb Electrical and thermal conduction in crystalline metals and alloys
72.15.Lh Relaxation times and mean free paths

Bound‐exciton‐related fine structure in charge transfer spectra of InP:Fe detected by calorimetric absorption spectroscopy

A. Juhl, A. Hoffmann, D. Bimberg, and H. J. Schulz

Appl. Phys. Lett. 50, 1292 (1987); http://dx.doi.org/10.1063/1.97888 (3 pages) | Cited 27 times

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Low‐temperature calorimetric absorption spectra (CAS) of semi‐insulating InP:Fe show three types of a novel fine structure related to Fe3+/Fe2+ charge transfer transitions. Absorption lines near 0.77 eV are assigned unambiguously to formation of excitons bound to Fe3+ centers. Fine structure of CAS spectra at 0.79 and 1.14 eV is caused by transitions of valence electrons to various 5E and 5T2 levels of the Fe2+ ion, respectively. In addition, there is some indication of a donor‐type charge transfer process Fe3+/Fe4+ at 1.1722 eV. The CAS results presented here allow a detailed description of the energy level scheme of InP:Fe.
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71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
71.35.-y Excitons and related phenomena
71.70.Gm Exchange interactions
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