APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

11 May 1987

Volume 50, Issue 19, pp. 1301-1390

Page 1 of 2 Pages Next Page | Jump to Page

Phase‐locked operation of a grating‐surface‐emitting diode laser array

N. W. Carlson, G. A. Evans, J. M. Hammer, M. Lurie, S. L. Palfrey, and A. Dholakia

Appl. Phys. Lett. 50, 1301 (1987); http://dx.doi.org/10.1063/1.98246 (3 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
A linear array of surface‐emitting distributed Bragg reflector AlGaAs diode lasers has been demonstrated. The intensity pattern for five emitting elements had structure with an angular divergence as low as 0.05°, indicating phase locking between the elements of the array.
Show PACS
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Compression of nonlinearly chirped pulses using Gires–Tournois interferometers

W. Zhao and E. Bourkoff

Appl. Phys. Lett. 50, 1304 (1987); http://dx.doi.org/10.1063/1.97889 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
In optical pulse compression experiments in the femtosecond regime, cubic phase distortion can adversely affect the compression ratio. This distortion arises from both the cubic phase of the grating pair used in such experiments and also from pulse propagation in the fiber, when taking into account the cubic order dispersion and shock terms. We numerically analyze how the cubic distortion, which leads to nonlinearly chirped pulses, can be compensated by Gires–Tournois interferometers. We discuss design considerations and show how the use of such interferometers can lead to even shorter optical pulses by utilizing more of its available bandwidth.
Show PACS
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
07.60.Ly Interferometers
42.81.Dp Propagation, scattering, and losses; solitons
42.79.Dj Gratings

Subpicosecond luminescence spectroscopy using sum frequency generation

Jagdeep Shah, T. C. Damen, B. Deveaud, and Dominique Block

Appl. Phys. Lett. 50, 1307 (1987); http://dx.doi.org/10.1063/1.97890 (3 pages) | Cited 37 times

Full Text: | Download PDF

Show Abstract
We report an improved time‐resolved luminescence spectroscopy system using sum frequency generation. The system has the following attributes: high time resolution (<400 fs, currently limited by the laser), ability to determine absolute zero in time delay with high precision, wide spectral range, and large dynamic range which allows measurement of luminescence under weak photoexcitation. We illustrate these with examples of time‐resolved luminescence spectra from GaAs.
Show PACS
78.55.Cr III-V semiconductors
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Rd Visible and ultraviolet spectrometers

Electro‐optic sampling measurements of high‐speed InP integrated circuits

J. M. Wiesenfeld, R. S. Tucker, A. Antreasyan, C. A. Burrus, A. J. Taylor, V. D. Mattera, and P. A. Garbinski

Appl. Phys. Lett. 50, 1310 (1987); http://dx.doi.org/10.1063/1.97891 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Multigigahertz waveforms in an InGaAs/InP metal‐insulator‐semiconductor field‐effect transistor inverter circuit have been measured noninvasively using the electro‐optic sampling technique with pulses from a gain‐switched InGaAsP laser. Propagation delays as low as 15 ps in a single inverter stage have been measured.
Show PACS
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
78.20.Jq Electro-optical effects
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
85.30.Tv Field effect devices

Single longitudinal mode operation of Er‐doped 1.5‐μm InGaAsP lasers

J. P. van der Ziel, M. G. Oberg, and R. A. Logan

Appl. Phys. Lett. 50, 1313 (1987); http://dx.doi.org/10.1063/1.97892 (3 pages) | Cited 26 times

Full Text: | Download PDF

Show Abstract
We attribute the single longitudinal mode operation of some Er‐doped 1.5‐μm InGaAsP lasers, observed here, to inhomogeneities in the active layer resulting from the Er. These results do not rule out the possibility of gain narrowing by the Er when Er is properly incorporated in the active layer.
Show PACS
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Current spreading and carrier diffusion in zinc‐diffused multiple‐stripe‐geometry lasers

R. Papannareddy, W. Ferguson, and J. K. Butler

Appl. Phys. Lett. 50, 1316 (1987); http://dx.doi.org/10.1063/1.97893 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
Numerical estimates of lateral current spreading and carrier diffusion in multiple‐stripe‐geometry AlGaAs lasers, both with and without zinc diffusion, are presented. This is the first analysis of the effect of zinc diffusion on the injected current and carrier density profiles. Results show that with a higher zinc diffusion depth, these lasers have significantly reduced current spreading, lower operating currents, and improved carrier density profiles. However, the higher zinc diffusion depths may lead to some undesirable dips in the injected current density profiles.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
66.30.J- Diffusion of impurities

Supermode selection in diffraction‐coupled semiconductor laser arrays

J. Z. Wilcox, M. Jansen, J. J. Yang, S. S. Ou, M. Sergant, and W. W. Simmons

Appl. Phys. Lett. 50, 1319 (1987); http://dx.doi.org/10.1063/1.98256 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
A modal gain analysis for diode laser diffraction‐coupled arrays which takes into account evanescent coupling in the waveguide section of an array is presented. Theoretical predictions are supported by comparisons of patterns from typical double‐heterostructure and large‐optical‐cavity lasers.
Show PACS
42.60.Fc Modulation, tuning, and mode locking
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Profile control of SiH radicals by cross magnetic field in plasma processing

H. Fujiyama, T. Yamashita, T. Takahashi, and H. Matsuo

Appl. Phys. Lett. 50, 1322 (1987); http://dx.doi.org/10.1063/1.97894 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
The distributions of optical emission intensity along the discharge axis in multiple‐parallel‐plate ac glow discharges were measured in the presence of a magnetic field perpendicular to the discharge electric field. In a SiH4(10%)/Ar discharge, time‐averaged spectroscopic measurements showed that profile control of not only plasmas but also SiH∗ was possible by varying the field strength. The emission intensity of SiH∗ was increased with the field strength. These results suggest that the present new configuration with cross magnetic field can make thin films on a large‐area substrate outside the multielectrodes uniform and can enhance the deposition rate.
Show PACS
52.80.Hc Glow; corona
81.15.Jj Ion and electron beam-assisted deposition; ion plating
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Fundamental processes affecting recovery in hydrogen thyratrons

C. G. Braun, D. A. Erwin, and M. A. Gundersen

Appl. Phys. Lett. 50, 1325 (1987); http://dx.doi.org/10.1063/1.97895 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Experimental measurements in the positive column of wall‐confined high‐current hydrogen thyratron discharges show a pronounced increase in atomic hydrogen excited state populations after the end of the current pulse. The decay rate of the electron and excited state population is observed to decrease as the energy flux increases. A time‐dependent collisional‐radiative model is used to calculate electron and excited state densities. This model is in reasonable agreement with experimental measurements and explains the afterpulse behavior. The analysis shows that the coupling between electron and atom temperatures is an important mechanism in high‐power thyratron recovery. A new method using laser‐induced fluorescence to obtain time‐resolved Stark broadening data for electron density measurements is presented.
Show PACS
52.75.Kq Plasma switches (e.g., spark gaps)
34.80.Dp Atomic excitation and ionization
52.80.-s Electric discharges
52.25.-b Plasma properties

Influence of photodetachment on the switching characteristics of diffuse discharges containing oxygen

G. Schaefer, G. Z. Hutcheson, K. H. Schoenbach, and P. F. Williams

Appl. Phys. Lett. 50, 1328 (1987); http://dx.doi.org/10.1063/1.97896 (3 pages)

Full Text: | Download PDF

Show Abstract
Externally sustained discharges can be used as opening and closing switches in pulsed power systems. Admixtures of attachers allow rapid opening when the external sustaining source is terminated; however, they will increase losses in the closing phase. Photodetachment has been proposed as an additional control mechanism to overcome these losses. This letter presents measurements on photoionization sustained discharges in argon and nitrogen containing admixtures of oxygen under the influence of laser radiation. Strong changes of the voltage‐current characteristics have been observed. The influence of parameters such as percentage of O2, laser power, laser pulse width, and circuit impedance is presented. Additionally, it is shown that photodetachment can enhance the stability of diffuse discharges.
Show PACS
52.75.Kq Plasma switches (e.g., spark gaps)
52.80.Hc Glow; corona
33.80.Eh Autoionization, photoionization, and photodetachment

High‐voltage, high‐power operation of the plasma erosion opening switch

J. M. Neri, J. R. Boller, P. F. Ottinger, B. V. Weber, and F. C. Young

Appl. Phys. Lett. 50, 1331 (1987); http://dx.doi.org/10.1063/1.97897 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
A plasma erosion opening switch (PEOS) is used as the opening switch for a vacuum inductive storage system driven by a 1.8‐MV, 1.6‐TW pulsed power generator. A 135‐nH vacuum inductor is current charged to ∼750 kA in 50 ns through the closed PEOS which then opens in <10 ns into an inverse ion diode load. Electrical diagnostics and nuclear activations from ions accelerated in the diode yield a peak load voltage (4.25 MV) and peak load power (2.8 TW) that are 2.4 and 1.8 times greater than ideal matched load values for the same generator values.
Show PACS
52.75.Kq Plasma switches (e.g., spark gaps)
52.80.Vp Discharge in vacuum
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
52.59.Mv High-voltage diodes

High current density hollow cathode electron beam source

J. J. Rocca, B. Szapiro, and T. Verhey

Appl. Phys. Lett. 50, 1334 (1987); http://dx.doi.org/10.1063/1.97898 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
An electron beam with current density greater than 30 A/cm2 and total current of 92 A has been generated in 5 μs pulses by accelerating the electrons from a glow discharge in a narrow gap between two grids. The ratio of the extracted electron beam current to discharge current is approximately 1. The gun also operates in a dc mode.
Show PACS
41.75.Fr Electron and positron beams
52.75.-d Plasma devices
07.77.-n Atomic, molecular, and charged-particle sources and detectors
84.47.+w Vacuum tubes

Very thin PbI2 single crystals grown by a hot wall technique

Y. Nagamune, S. Takeyama, N. Miura, T. Minagawa, and A. Misu

Appl. Phys. Lett. 50, 1337 (1987); http://dx.doi.org/10.1063/1.97899 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
A hot wall technique was applied to grow PbI2 thin films of about 100 nm thickness on cleaved surfaces of CdI2 single crystals. The band‐edge exciton absorption spectra were investigated for the films grown in various conditions. A very sharp exciton absorption line of 8.8 meV half‐width was obtained in a PbI2 single‐crystal film grown at a 75 °C substrate temperature. The sharpness of the exciton line proved the excellent quality of the PbI2 film and the usefulness of the technique.
Show PACS
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.66.-w Optical properties of specific thin films
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
71.35.-y Excitons and related phenomena

Photothermal detection for light‐scattering material by laser interferometry

L. Chen and S. Y. Zhang

Appl. Phys. Lett. 50, 1340 (1987); http://dx.doi.org/10.1063/1.97900 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
A highly sensitive photothermal scheme is described, in which the photothermally induced refractive index variation is measured by a specially designed interferometry. The setup is very simple and stable in facilitating practical applications. It can be used for light‐scattering samples, as well as other state samples. Some experiments for detection of both periodic and nonperiodic photothermal refractive index variation are performed.
Show PACS
07.60.Ly Interferometers
44.30.+v Heat flow in porous media
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Rd Visible and ultraviolet spectrometers
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Study of the moving species in ion‐induced reactions

K. Tao, C. A. Hewett, S. S. Lau, Ch. Buchal, and D. B. Poker

Appl. Phys. Lett. 50, 1343 (1987); http://dx.doi.org/10.1063/1.97901 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
We present evidence in this study that the moving species under ion mixing conditions are affected by the implantation damage distribution in the sample. This observation holds for metal‐semiconductor, metal‐metal, and semiconductor‐semiconductor systems. The direction of thermal annealing atomic transport appears to play a role in ion mixing as well. When these two factors are in the same direction, only one dominant moving species is observed. When these two factors are in opposite directions, both constituents can contribute to the atomic transport in ion mixing.
Show PACS
61.80.Jh Ion radiation effects
66.30.J- Diffusion of impurities
68.35.Fx Diffusion; interface formation

Ni‐InP reaction: Formation of amorphous and crystalline ternary phases

T. Sands, C. C. Chang, A. S. Kaplan, V. G. Keramidas, K. M. Krishnan, and J. Washburn

Appl. Phys. Lett. 50, 1346 (1987); http://dx.doi.org/10.1063/1.97851 (3 pages) | Cited 29 times

Full Text: | Download PDF

Show Abstract
Three previously unreported ternary phases of the type NixInP have been observed to be the primary reaction products of the Ni/InP reaction. The first phase, amorphous NixInP(x≂2.7), forms at the Ni/InP interface by a solid‐state amorphization process at low temperatures (T≲200 °C). Amorphous NixInP crystallizes at ∼300 °C to form a hexagonal NixInP phase (a0=0.412 nm and c0=0.483 nm) with a similar composition. A third ternary phase with nominal composition Ni2InP (monoclinic, a0=0.681 nm, b0=0.529 nm, c0=1.280 nm, and β=95°) nucleates at higher temperatures and is the final reaction product. This final phase is stable at temperatures up to 500 °C in samples capped with SiO2.
Show PACS
68.55.Nq Composition and phase identification
68.35.Rh Phase transitions and critical phenomena
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

New technique of photodisplacement imaging using one laser for both excitation and detection

L. Chen, K. H. Yang, and S. Y. Zhang

Appl. Phys. Lett. 50, 1349 (1987); http://dx.doi.org/10.1063/1.97852 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
A new interferometry technique has been developed that uses only a single laser for both exciting and detecting photothermal displacement, which greatly simplifies the system and the optical alignment. The minimum detectable displacement 10−2 Å/(Hz)1/2 is obtained. To examine this setup, we have performed a simulated experiment. And also, we have succeeded in imaging the subsurface flaw in a copper block. The preliminary results demonstrate that this new method is very promising for nondestructive evaluation and other applications.
Show PACS
07.60.Ly Interferometers
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Rd Visible and ultraviolet spectrometers
81.70.-q Methods of materials testing and analysis

Scanning tunneling microscopy and potentiometry on a semiconductor heterojunction

P. Muralt, H. Meier, D. W. Pohl, and H. W. M. Salemink

Appl. Phys. Lett. 50, 1352 (1987); http://dx.doi.org/10.1063/1.97853 (3 pages) | Cited 46 times

Full Text: | Download PDF

Show Abstract
The potential distribution across the cleaved end face of a forward‐biased GaAs double heterojunction laser diode was mapped using scanning tunneling potentiometry. Space‐charge regions next to the heterojunction interface as well as the electron‐hole recombination region within the active layer are outlined with nanometer resolution. The carrier injection zone in the active layer is observed as a function of junction voltage.
Show PACS
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Effect of thermal pretreatment on electron irradiation induced defects in hydrogen‐grown silicon

Jin Wu and Guo‐Gang Qin

Appl. Phys. Lett. 50, 1355 (1987); http://dx.doi.org/10.1063/1.97854 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
Wafers of float zone Si grown in hydrogen (Si[H]) were annealed at various temperatures in the range of 300–750 °C before irradiation with 5 MeV electrons. It was found that hydrogen‐related deep levels were no longer observed, when the preannealing temperature was above 500 °C (450 °C) in the case of irradiated n‐type Si[H] (p‐type Si[H]) samples. Similarly, the convergence of annealing temperatures of different irradiation defects towards a common temperature normally observed in Si[H] was no longer observed, if the Si[H] sample had been annealed at or above 550 °C. A dynamic model is proposed to explain the experimental results.
Show PACS
61.80.Fe Electron and positron radiation effects
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Compound formation at the interface between cobalt thin films and single‐crystal GaAs

M. Genut and M. Eizenberg

Appl. Phys. Lett. 50, 1358 (1987); http://dx.doi.org/10.1063/1.97855 (3 pages) | Cited 27 times

Full Text: | Download PDF

Show Abstract
Interfacial reactions between cobalt thin films and single‐crystal GaAs substrates have been studied by means of Auger electron spectroscopy, transmission electron microscopy, and x‐ray diffraction. The interaction starts at ∼325 °C by the formation of a ternary phase, most probably Co2GaAs, which grows highly oriented with respect to the (001) substrate, with a lattice mismatch of ∼−10%. The reaction kinetics has been studied and found to be diffusion controlled with an activation energy of 0.7±0.1 eV. Cobalt was determined as the dominant diffusion species. The oriented ternary phase co‐exists with randomly oriented CoGa and CoAs at the temperature range of 325–500 °C, while at higher temperatures only the binary compounds prevail.
Show PACS
68.35.Fx Diffusion; interface formation
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
66.30.Ny Chemical interdiffusion; diffusion barriers

Spectroscopic evidence that oxygen suppresses Si incorporation into vapor phase epitaxial InP

Naotaka Iwata and Takeshi Inoshita

Appl. Phys. Lett. 50, 1361 (1987); http://dx.doi.org/10.1063/1.97856 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
Photothermal ionization spectroscopy is employed to monitor the residual donor impurities in InP grown by vapor phase epitaxy, and study the effect of adding O2 to the carrier gas. The dominant donor species are found to be Si and S, irrespective of the O2 addition, and their concentrations are obtained with the aid of Hall measurements. The result shows that the O2 addition reduces the incorporation of Si into InP but does not affect the incorporation of S.
Show PACS
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Molecular beam epitaxial growth and low‐temperature optical characterization of GaAs0.5Sb0.5 on InP

J. Klem, D. Huang, H. Morkoç, Y. E. Ihm, and N. Otsuka

Appl. Phys. Lett. 50, 1364 (1987); http://dx.doi.org/10.1063/1.97857 (3 pages) | Cited 20 times

Full Text: | Download PDF

Show Abstract
GaAs1−xSbx nearly lattice matched to InP substrates has been grown by molecular beam epitaxy. For a given As and Sb flux, the GaSb mole fraction is shown to be sensitive to the Ga flux rate. Low‐temperature photoluminescence spectra exhibit a dominant emission line at 0.780–0.790 eV with a full width at half‐maximum as narrow as 7.6 meV, which is believed to be the narrowest obtained to date. Optical absorption measurements demonstrate that the band gap of this material is considerably smaller than predicted by the commonly accepted composition/band gap relation.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors

Amorphous silicon, germanium, and silicon‐germanium alloy thin‐film transistor performance and evaluation

Philip Yan, Norman N. Lichtin, and Don L. Morel

Appl. Phys. Lett. 50, 1367 (1987); http://dx.doi.org/10.1063/1.97858 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
The first hydrogenated amorphous germanium and hydrogenated amorphous silicon‐germanium alloy field‐effect transistors with appreciable field‐effect response in n‐ and p‐channel modes were developed by reducing the dihydride content in the films. Field‐effect mobilities were derived from transistor characteristics. Hole mobilities are superior to those in pure hydrogenated amorphous silicon which offers the opportunity for improved thin‐film devices.
Show PACS
85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Magnetotransport and luminescence measurements in an n‐type selectively doped InGaAs/GaAs strained quantum well structure

I. J. Fritz, J. E. Schirber, E. D. Jones, T. J. Drummond, and L. R. Dawson

Appl. Phys. Lett. 50, 1370 (1987); http://dx.doi.org/10.1063/1.97859 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
A selectively doped, n‐type, single strained quantum well (SSQW) structure, consisting of an 8‐nm‐thick In0.25Ga0.75As layer sandwiched between thick GaAs layers, has been grown by molecular beam epitaxy. Low‐field Hall‐effect measurements from 4 to 300 K and field‐dependent magnetotransport measurements at 4 K show that conduction through the doped GaAs layers competes with conduction from the two‐dimensional electron gas confined by the InGaAs quantum well. Photoluminescence measurements at 4 K yield a band‐gap energy of 1.30 eV and confirm the transport measurement of carrier density in the InGaAs conducting channel. Analysis of the parallel‐conduction process yields channel carrier density and mobility which are consistent with data on strained‐layer superlattices (SLS’s) not exhibiting parallel conduction. Comparison of the SSQW and SLS results demonstrates that heavily doped SSQW structures require narrow doping spikes to avoid parasitic current paths.
Show PACS
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.My Galvanomagnetic and other magnetotransport effects
78.55.Cr III-V semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance

Critical resolved shear stress measurements for silicon‐doped GaAs single crystals

E. D. Bourret, M. G. Tabache, and A. G. Elliot

Appl. Phys. Lett. 50, 1373 (1987); http://dx.doi.org/10.1063/1.97860 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
The critical resolved shear stress of GaAs single crystals doped with silicon was directly measured using dynamical compression tests at high temperatures. At the melting point the critical resolved shear stress is 0.032 and 0.027 kg/mm2 for crystals doped with 1.5×1018 and 3×1018 cm−3 silicon, respectively. These values are lower than that for undoped GaAs. This reinforces our earlier conclusion that solid solution hardening and the reduction of crystallographic glide is not the only mechanism by which dopants reduce the formation of dislocations during the growth of single crystals from the melt.
Show PACS
81.40.Lm Deformation, plasticity, and creep
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
61.72.S- Impurities in crystals
81.10.Fq Growth from melts; zone melting and refining
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close