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12 Jan 1987

Volume 50, Issue 2, pp. 57-117


Polarization switching in semiconductor lasers driven via injection from an external radiation

A. Sapia, P. Spano, and B. Daino

Appl. Phys. Lett. 50, 57 (1987); http://dx.doi.org/10.1063/1.97871 (3 pages) | Cited 11 times

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Switching between transverse electric (TE) and transverse magnetic (TM) polarization states in the output from a semiconductor laser is experimentally obtained through injection locking from an external TM polarized radiation. Switching, which is connected to the loss reduction of the TM modes caused by the injection‐locking mechanism, is faster than a few nanoseconds, the resolution limit of our apparatus.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Electron density measurements of electron‐beam‐pumped XeF and KrF laser mixtures

W. D. Kimura, Dean R. Guyer, S. E. Moody, J. F. Seamans, and D. H. Ford

Appl. Phys. Lett. 50, 60 (1987); http://dx.doi.org/10.1063/1.97872 (3 pages) | Cited 13 times

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A CO2 quadrature interferometer is used to measure the temporal evolution of the electron density in XeF and KrF electron‐beam‐pumped laser mixtures (nonlasing). Measurements are obtained using a 300‐kV electron beam which delivers ≳10 A/cm2 at the foil for pulse durations ≤650 ns (FWHM). For typical XeF mixtures (99.35% Ne/0.5% Xe/0.15% F2 at 2888 Torr) the electron density varies between 3 and 4.5×1014 cm−3 during the pulse. The electron density is found to increase as the initial F2 concentration is decreased. Both 10% Kr in argon diluent and argon‐free KrF mixtures are tested. The electron density for these mixtures has the same magnitude and behavior as the typical XeF mixture.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

GaInAsP/InP double heterostructure lasers emitting at 1.5 μm grown by chemical beam epitaxy

W. T. Tsang

Appl. Phys. Lett. 50, 63 (1987); http://dx.doi.org/10.1063/1.97873 (3 pages) | Cited 6 times

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Double heterostructure lasers of GaxIn1−xAs1−yPy lattice matched to InP and emitting at 1.55 μm have been grown by chemical beam epitaxy (CBE). Broad‐area lasers fabricated from these wafers had pulsed room‐temperature threshold current densities Jth and differential quantum efficiencies that are similar to the best results obtained from wafers grown by liquid phase epitaxy and metalorganic chemical vapor deposition. The lowest Jth obtained was 1 kA/cm2 with an active layer thickness of 0.14 μm. Differential quantum efficiencies were ∼15–18% per facet. Lasing was obtained with these broad‐area lasers up to 106 °C with relatively weak degradation of quantum efficiency. Excellent device uniformity and wafer‐to‐wafer reproducibility were obtained with CBE. The method appears at this yet early stage to be an attractive approach to GaInAsP epitaxy.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Optical frequency‐selective amplification in a distributed feedback type semiconductor laser amplifier

Hitoshi Kawaguchi, Katsuaki Magari, Kunishige Oe, Yoshio Noguchi, Yoshinori Nakano, and George Motosugi

Appl. Phys. Lett. 50, 66 (1987); http://dx.doi.org/10.1063/1.97874 (2 pages) | Cited 13 times

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Optical frequency‐selective amplification of an injected optical signal in a distributed feedback type semiconductor laser amplifier is studied. Based on this mechanism an optical demultiplexer with optical gain for optical frequency‐division multiplexing is developed. A 9 GHz spectrum selectivity and a 11 dB extinction ratio are observed.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Orientation dependence of the phase modulation in a p‐n junction GaAs/AlxGa1−xAs waveguide

J. Faist, F.‐K. Reinhart, D. Martin, and E. Tuncel

Appl. Phys. Lett. 50, 68 (1987); http://dx.doi.org/10.1063/1.97875 (3 pages) | Cited 12 times

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Phase modulation has been measured in a reverse‐biased P‐i‐N GaAs/AlxGa1−xAs double heterostructure with heavily doped (N, P∼1018 cm−3) AlxGa1−xAs layers. These measurements were performed at two wavelengths (1.09 and 1.15 μm), for both TE and TM modes and with light propagating in the [110] and [110] directions. We found that the effective quadratic electro‐optic coefficients R11 and R12 have approximately the same magnitude and sign. The values are −(40±10)×10−17 cm2/V2 and −(54±10)×10−17 cm2/V2 for λ=1.15 μm and λ=1.09 μm, respectively. The contribution of the plasma effect due to the free carrier is comparable and has the same sign.
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42.79.Gn Optical waveguides and couplers
42.79.Hp Optical processors, correlators, and modulators
78.20.Jq Electro-optical effects

Ion beam generation by field ionization of laser‐excited Rydberg atoms

T. Oomori, K. Ono, S. Fujita, and Y. Murai

Appl. Phys. Lett. 50, 71 (1987); http://dx.doi.org/10.1063/1.97876 (3 pages) | Cited 2 times

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Sodium atoms (108–1011 cm−3) effused from an oven where excited by two pulsed dye lasers (∼8–15 ns, ∼100 μJ) from the ground state 3s, via an intermediate state 3p, to a Rydberg state ns or nd (20≤n≤25). About 50 ns after the laser irradiation, a pulsed electric field (0.5–5.5 kV/cm) was applied to the Rydberg atoms to ionize them and accelerate the resulting ions. Thus, a pulsed ion beam was obtained with a maximum total electric charge of ∼5 pC, corresponding to a peak current of ∼25 μA with an output pulse of ∼200 ns full width at half‐maximum.
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07.77.-n Atomic, molecular, and charged-particle sources and detectors
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
32.60.+i Zeeman and Stark effects

Effective elastic constants of thin‐film tungsten‐silicide from surface acoustic wave analysis

G. M. Crean, A. Golanski, and J. C. Oberlin

Appl. Phys. Lett. 50, 74 (1987); http://dx.doi.org/10.1063/1.97823 (3 pages) | Cited 8 times

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The dispersion of surface acoustic waves propagating on single‐crystal (100) silicon substrates covered by thin films of tungsten‐silicide has been investigated using an acoustic material signature technique at a frequency of 339 MHz. The tungsten‐silicide layers (500–2500 Å) were deposited using a co‐sputtering technique, isochronally annealed at temperatures of 700 and 850 °C for 45 min in an argon atmosphere and examined using Rutherford backscattering spectrometry. Dispersion curves were calculated using a Tiersten model [J. Appl. Phys. 40, 2 (1969)] and fitted to the experimental dispersion data. The effective elastic constants for annealed and ‘‘as‐deposited’’ layers were determined as best‐fit parameters.
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43.35.Ns Acoustical properties of thin films
68.60.Bs Mechanical and acoustical properties
43.35.Pt Surface waves in solids and liquids
62.20.D- Elasticity

Measurement of GaAs surface oxide desorption temperatures

A. J. SpringThorpe, S. J. Ingrey, B. Emmerstorfer, P. Mandeville, and W. T. Moore

Appl. Phys. Lett. 50, 77 (1987); http://dx.doi.org/10.1063/1.97824 (3 pages) | Cited 53 times

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Auger analysis of oxidized GaAs surfaces, heat treated in vacuo, has been used to establish an accurate value for the oxide desorption temperature Tox. Major differences are found in the value of Tox for the surface oxides produced by thermal and ozone oxidation: 582±1 °C and 638±1°C, respectively. These temperature differences are also confirmed by reflection high‐energy electron diffraction observations of the thermal cleaning of GaAs substrates prior to epitaxial growth in a molecular beam epitaxy system. It is suggested that the measured temperatures can be used in establishing appropriate growth conditions for ‘‘indium‐free’’ GaAs substrates during molecular beam epitaxial growth.
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68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
81.65.-b Surface treatments
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Ultraviolet light stimulated thermal oxidation of silicon

E. M. Young and William A. Tiller

Appl. Phys. Lett. 50, 80 (1987); http://dx.doi.org/10.1063/1.97825 (3 pages) | Cited 20 times

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The photon‐stimulated oxidation enhancement efficiency is shown to increase by an order of magnitude when the photon energy is raised from the visible range to the UV range just above the SiO2 to Si conduction‐band energy difference. An additional order of magnitude in oxidation enhancement efficiency occurs when the UV photon energy is raised to just above the O2 dissociation energy. A critical UV pulse energy density threshold was found above which major morphological oxidation features developed at the laser beam spot location on the sample surface.
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81.65.-b Surface treatments
82.50.-m Photochemistry

Millimeter‐band oscillations based on resonant tunneling in a double‐barrier diode at room temperature

E. R. Brown, T. C. L. G. Sollner, W. D. Goodhue, and C. D. Parker

Appl. Phys. Lett. 50, 83 (1987); http://dx.doi.org/10.1063/1.97826 (3 pages) | Cited 43 times

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A double‐barrier diode at room temperature has yielded oscillations with fundamental frequencies up to 56 GHz and second harmonics up to 87 GHz. The output powers at these frequencies were about 60 and 18 μW, respectively. These results are attributed to a recent improvement in the material parameters of the device and to the integration of the device into a waveguide resonator. The most successful diode to date has thin (∼1.5 nm) AlAs barriers, a 4.5‐nm‐wide GaAs quantum well, and 2×1017 cm−3 doping concentration in the n‐GaAs outside the barriers. This particular diode is expected to oscillate at frequencies higher than those achieved by any reported p‐n tunnel diode.
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85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Technique for the direct synthesis and growth of indium phosphide by the liquid phosphorus encapsulated Czochralski method

Tomoki Inada, Takashi Fujii, Minoru Eguchi, and Tsuguo Fukuda

Appl. Phys. Lett. 50, 86 (1987); http://dx.doi.org/10.1063/1.97827 (3 pages) | Cited 2 times

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The direct synthesis and growth of InP have been successfully performed by the newly developed liquid P encapsulated Czochralski technique. We have developed a way to use liquid P both as a source element for the synthesis instead of P gas, and also as an ‘‘encapsulant’’ for the Czochralski growth instead of B2O3. The existence of two distinct layers, liquid P and molten InP, has been discovered during the process. Grown single crystals showed a carrier concentration of as low as 5×1015 cm−3.
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81.10.Fq Growth from melts; zone melting and refining
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Nitrogen implantation for local inhibition of oxidation

Pascale Berruyer and Michel Bruel

Appl. Phys. Lett. 50, 89 (1987); http://dx.doi.org/10.1063/1.97828 (3 pages) | Cited 3 times

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Nitrogen implantation for local oxidation is a way of forming a silicon nitride film directly sealed to the silicon surface. (N2)+ implantation in silicon was performed through a thin film of oxide at low energy (10–40 keV) and high dose (1016–1017 at/cm2). Oxidation resistance as a function of dose and energy was investigated using step height measurements. Forming a layer which was an efficient oxidation mask required a minimum dose at a given energy. For a (N2)+ implant energy of 20, 25, and 40 keV the minimum doses are respectively 5×1016, 6.5×1016, and 7×1016 at/cm2. In addition the layers formed at a dose of 1017 at/cm2 and a (N2)+ energy above 55 keV do not put up a complete oxidation resistance. Using these results, simple devices were developed in order to examine the profile of the transition region between field oxide and implanted area. It turned out that the length of this region (commonly known as the bird’s beak) is largely reduced. A length of 50 nm was obtained for an oxide thickness of 550 nm. The ratio of the bird’s beak length to field oxide was less than 0.1.
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61.72.uf Ge and Si
81.65.-b Surface treatments
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Transmission electron microscopy and photoluminescence study of silicon and boron ion implanted GaAs/GaAlAs quantum wells

Y. Arakawa, J. S. Smith, A. Yariv, N. Otsuka, C. Choi, B. P. Gu, and T. Venkatesan

Appl. Phys. Lett. 50, 92 (1987); http://dx.doi.org/10.1063/1.97829 (3 pages) | Cited 7 times

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Transmission electron microscopy (TEM) and photoluminescence (PL) data are presented on GaAs/Ga0.25Al0.75As quantum well (QW) structures grown by molecular beam epitaxy which were implanted with B ions and Si ions, respectively, to a dose of 1015 cm−2. TEM observations reveal that significant intermixing of the layers occurs in Si implanted QW structures at a depth well beyond the projected range of the implanted ion after 1 h thermal annealing at 850 °C. A subsequent 2‐h annealing causes mixing near the surface, while the unmixed region still remains at a distance twice the projection range. In contrast, intermixing was not observed in annealed B implanted QW structures, which suggests a strong dependence of alloy mixing effects on the impurity. PL data support these results.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Fx Diffusion; interface formation
78.55.Cr III-V semiconductors

Mesotaxy: Single‐crystal growth of buried CoSi2 layers

Alice E. White, K. T. Short, R. C. Dynes, J. P. Garno, and J. M. Gibson

Appl. Phys. Lett. 50, 95 (1987); http://dx.doi.org/10.1063/1.97830 (3 pages) | Cited 216 times

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Buried single‐crystal CoSi2 layers in silicon have been formed by high dose implantation of cobalt followed by annealing. These layers grow in both the (100) and (111) orientations—those in (111) have better crystallinity, but those in (100) are of higher electrical quality. Electrical transport measurements on the layers give values for the resistance ratios and superconducting critical temperatures that are better than the best films grown by conventional techniques and comparable to bulk CoSi2.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
73.61.At Metal and metallic alloys
74.78.-w Superconducting films and low-dimensional structures

Electroluminescence from the base of a GaAs/AlGaAs double heterojunction bipolar transistor

A. F. J. Levi, J. R. Hayes, A. C. Gossard, and J. H. English

Appl. Phys. Lett. 50, 98 (1987); http://dx.doi.org/10.1063/1.97831 (3 pages) | Cited 8 times

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We have measured the electroluminescence spectrum of a double heterojunction bipolar transistor and found that a potential well formed at the base‐collector junction acts as a preferential trap of low‐energy electrons in the base. At high injection current densities the trap saturates. The subsequent buildup of carriers in the base changes the transistor turn‐on characteristics.
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78.60.Fi Electroluminescence
85.30.Pq Bipolar transistors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Investigation of surface passivation of amorphous silicon using photothermal deflection spectroscopy

R. C. Frye, J. J. Kumler, and C. C. Wong

Appl. Phys. Lett. 50, 101 (1987); http://dx.doi.org/10.1063/1.97866 (3 pages) | Cited 11 times

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We have used photothermal deflection spectroscopy to examine optical absorption in amorphous silicon films using a variety of surface passivation techniques. Absorption coefficients well below the band gap in these films are strongly influenced by surface state densities. Surfaces oxidized by either chemical treatment or in oxygen‐containing plasmas show lower interface state densities than do those passivated with deposited dielectrics.
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78.66.-w Optical properties of specific thin films
81.65.-b Surface treatments
73.20.At Surface states, band structure, electron density of states

Thickness dependence of oxide breakdown under high field and current stress

M.‐S. Liang and J. Y. Choi

Appl. Phys. Lett. 50, 104 (1987); http://dx.doi.org/10.1063/1.97867 (3 pages) | Cited 7 times

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The integrity of gate oxides is shown to be a strong function of both oxide thickness and applied field and current strength. Thin gate oxides show longer lifetime under low field and current stress. However, high field and current induced intrinsic breakdown is inversely proportional to oxide thickness. It is also found that the effect of polycrystalline silicon and silicon dioxide interface roughness on oxide charge‐to‐breakdown is independent of oxide thickness and stressing field and current level. A model of positive charge generation and recombination is applied to explain the experimental data.
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77.22.Jp Dielectric breakdown and space-charge effects
72.20.Ht High-field and nonlinear effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

18% efficient intrinsically passivated laser‐processed silicon solar cells

R. F. Wood, R. D. Westbrook, and G. E. Jellison

Appl. Phys. Lett. 50, 107 (1987); http://dx.doi.org/10.1063/1.97868 (3 pages) | Cited 2 times

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It is demonstrated that single‐crystal silicon solar cells with efficiencies greater than 18% AM1.5 can be fabricated by glow discharge implantation and pulsed excimer laser annealing. A unique characteristic of these cells is that the surfaces are passivated intrinsically to give open circuit voltages as high as 640 mV without high‐temperature oxidation. The simplicity of the processing is emphasized and the prospects for raising the efficiencies to even higher values are discussed.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
81.65.-b Surface treatments

Experimental determination of the edge depletion width of ahe two‐dimensional electron gas in GaAs/AlxGa1−xAs

K. K. Choi, D. C. Tsui, and K. Alavi

Appl. Phys. Lett. 50, 110 (1987); http://dx.doi.org/10.1063/1.97869 (3 pages) | Cited 50 times

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A new method based on one‐dimensional localization theory is introduced to determine the width of the two‐dimensional electron gas (2DEG) in narrow conducting channels of GaAs/AlxGa1−xAs heterojunctions. The edge depletion width of the 2DEG, measured by the difference between this width and the metallurgical width of the channel, is ∼0.5 μm±0.2 μm for a 2DEG density ns=1.5×1011/cm2.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Nonequilibrium boron doping effects in low‐temperature epitaxial silicon films

B. S. Meyerson, F. K. LeGoues, T. N. Nguyen, and D. L. Harame

Appl. Phys. Lett. 50, 113 (1987); http://dx.doi.org/10.1063/1.98255 (3 pages) | Cited 98 times

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We report the first preparation of in situ boron‐doped epilayers by a low‐temperature chemical vapor deposition process (T=550 °C). Boron incorporation is approximately linear in source gas concentration, and active levels of boron incorporation exceeding 1×1020 B/cm3 have been achieved in as‐deposited 550 °C epilayers. This value exceeds solid solubility limits for boron in silicon at these temperatures by two orders of magnitude, and highlights the nonequilibrium nature of this process. High resolution transmission electron microscopy lattice imaging of this material shows it to be free of boron precipitates, while both plane view transmission electron microscopy and x‐ray topography fail to reveal extended defects. Utilizing low‐temperature processing throughout, p/n junctions have been fabricated in several of the in situ doped layers, with essentially ideal junction quality factors (n=1.0 –1.05) found for junctions of 1×106 μm2.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Magnetic and structural properties of melt‐spun erbium‐iron‐boron ribbons

G. P. Meisner

Appl. Phys. Lett. 50, 116 (1987); http://dx.doi.org/10.1063/1.97870 (2 pages) | Cited 2 times

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Melt‐spun ribbons of Er0.135Fe0.813B0.052 have a relatively large coercivity of nearly 5 kOe. The coercivity is a sharply peaked function of wheel speed (quench rate) with the optimally quenched ribbons having a wheel speed of 14 m/s and a Br of 4 kG. This also coincides with the maximum in energy product of 2.9 MGOe. The abrupt degradation of coercivity with increasing quench rate corresponds precisely to the lack of crystallinity of the ribbons as determined by x‐ray powder diffraction.
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75.50.Vv High coercivity materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.70.Ak Magnetic properties of monolayers and thin films
68.55.-a Thin film structure and morphology
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