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25 May 1987

Volume 50, Issue 21, pp. 1465-1534


High power with high efficiency in a narrow single‐lobed beam from a diode laser array in an external cavity

C. J. Chang‐Hasnain, J. Berger, D. R. Scifres, W. Streifer, J. R. Whinnery, and A. Dienes

Appl. Phys. Lett. 50, 1465 (1987); http://dx.doi.org/10.1063/1.97801 (3 pages) | Cited 31 times

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High output power (700 mW) in a nearly diffraction‐limited (0.7°) single‐lobed nonsteering output beam is obtained from a gain‐guided diode laser array in a novel, easily fabricated external cavity configuration. The laser output beam is collimated in both lateral and vertical directions. Differential quantum efficiency as high as 70% has been measured along with excellent linearity of the optical power versus current characteristic. The power and efficiency are the highest reported for a coupled‐stripe laser array emitting a narrow single‐lobed beam.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Electro‐optical characteristics of a new liquid‐crystal display with an improved gray‐scale capability

F. Leenhouts, M. Schadt, and H.‐J. Fromm

Appl. Phys. Lett. 50, 1468 (1987); http://dx.doi.org/10.1063/1.97802 (3 pages) | Cited 11 times

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A new liquid‐crystal display (LCD) is presented with a much better gray‐scale capability than twisted nematic LCD’s and a comparably good contrast. In the not‐energized state the coloration of the display is weak, enabling full color applications. Due to its improved gray‐scale capability which results from the shallow slope of the electro‐optical characteristics, the display is particularly suited for active matrix applications.
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78.20.Jq Electro-optical effects
85.60.Pg Display systems
42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Ls Scanners, image intensifiers, and image converters
42.25.Lc Birefringence

Picosecond optical sampling by semiconductor lasers

K. Ketterer, E. H. Böttcher, and D. Bimberg

Appl. Phys. Lett. 50, 1471 (1987); http://dx.doi.org/10.1063/1.97803 (3 pages) | Cited 7 times

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It is shown that a semiconductor laser driven by short electrical current pulses represents a high‐speed gate for external optical signals. Based on this finding a novel sampling technique for the detection of light pulses is demonstrated. Conventional semiconductor lasers can be used as sampling gates in a cross correlation arrangement. The time resolution is observed to be better than 10 ps under appropriate injection conditions of the sampling laser. Computer simulations of the sampling system are carried out in the framework of the rate equation model. The theoretical predictions on the time response and the dynamics of the sampling system agree with the experimental observations.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Acoustic wave viscosity sensor

A. J. Ricco and S. J. Martin

Appl. Phys. Lett. 50, 1474 (1987); http://dx.doi.org/10.1063/1.97804 (3 pages) | Cited 53 times

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An acoustic wave device utilizing plate modes having components of displacement parallel to a crystal surface has been demonstrated to be an effective sensor of liquid shear viscosity (η) over a wide viscosity range. When a liquid is present on the sensor surface, the propagation loss of the acoustic wave depends upon η in a calculable fashion. Because the device functions at 159 MHz, liquid relaxation effects occur with high viscosity liquids, causing the propagation loss to saturate. Viscosity is sampled in the 50‐nm‐thick liquid layer which couples to the acoustic wave, so that only a single drop of liquid is required for measurement.
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43.35.Yb Ultrasonic instrumentation and measurement techniques
66.20.-d Viscosity of liquids; diffusive momentum transport
62.60.+v Acoustical properties of liquids
62.80.+f Ultrasonic relaxation

Design of low velocity‐spread cusp guns for axis encircling beams

W. Lawson

Appl. Phys. Lett. 50, 1477 (1987); http://dx.doi.org/10.1063/1.97805 (3 pages) | Cited 4 times

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The design of a novel electron gun suitable for intense beam cyclotron resonance devices is introduced here. An annular Pierce‐type gun is used in conjunction with an unbalanced nonadiabatic field reversal and an adiabatic compression region to produce an axis‐encircling beam. This beam is ideally suited for interaction with electromagnetic waves that have strong on‐axis electric fields (e.g., the TE011 mode). Low velocity spreads are achieved by utilizing the beam self‐fields in the compression region and by focusing in the Pierce gun.
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84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
52.40.Mj Particle beam interactions in plasmas

Microcleavage transmission electron microscopy applied to the interfacial structure of multilayers and microstructure of small particles on a substrate

Y. Lepêtre, E. Ziegler, and Ivan K. Schuller

Appl. Phys. Lett. 50, 1480 (1987); http://dx.doi.org/10.1063/1.97806 (2 pages) | Cited 5 times

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We have developed a new technique useful in imaging microstructures such as small particles, multilayers, and superlattices on a substrate. By producing images at various angles with respect to the substrate we have been able to obtain new information on interfacial structure not yet available with other techniques.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology

Static atomic displacements in a CdTe epitaxial layer on a GaAs substrate

R. D. Horning and J.‐L. Staudenmann

Appl. Phys. Lett. 50, 1482 (1987); http://dx.doi.org/10.1063/1.97807 (3 pages) | Cited 4 times

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A (001)CdTe epitaxial layer on a (001)GaAs substrate was studied by x‐ray diffraction between 10 and 360 K. The CdTe growth took place at 380 °C in a vertical gas flow metalorganic chemical vapor deposition reactor. Lattice parameters and integrated intensities of both the substrate and the epitaxial layer using the (00l) and (hhh) Bragg reflections reveal three important features. Firstly, the GaAs substrate does not exhibit severe strain after deposition and it is as perfect as a bulk GaAs. Secondly, the CdTe unit cell distorts tetragonally with a⊥>a∥ below 300 K. The decay of the (00l) reflection intensities as a function of the temperature yields a Debye temperature of 142 K, the same value as for bulk CdTe. Thirdly, a temperature‐dependent isotropic static displacement of the Cd and the Te atoms is introduced to account for the anomalous behavior of the (hhh) intensities.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Effect of thermodynamics on ion mixing

T. W. Workman, Y. T. Cheng, W. L. Johnson, and M‐A. Nicolet

Appl. Phys. Lett. 50, 1485 (1987); http://dx.doi.org/10.1063/1.98253 (3 pages) | Cited 33 times

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Ion mixing of elemental 4d‐5d metallic bilayers at 77 K by 600 keV Xe++ ions has been studied to test the validity of the phenomenological model of ion mixing that predicts a dependence on the chemical heats of mixing, ΔHmix, and on the cohesive energies, ΔHcoh, of the bilayer elements. A series of samples was chosen to minimize the variation in kinematical properties between samples while maximizing the variation in heats of mixing. The experimental results agree well with the model’s predictions, and the experimentally determined constants K1=0.034 Å and K2=27 agree with those of previous work.
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61.80.Jh Ion radiation effects
82.60.Fa Heat capacities and heats of phase transitions
05.70.-a Thermodynamics
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Phase transformation kinetics—the role of laser power and pulse width in the phase change cycling of Te alloys

K. A. Rubin, R. W. Barton, M. Chen, V. B. Jipson, and D. Rugar

Appl. Phys. Lett. 50, 1488 (1987); http://dx.doi.org/10.1063/1.97808 (3 pages) | Cited 11 times

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The effect of laser pulse width and amplitude on the kinetics of laser‐induced phase transformations of thin films of Te alloys has been mapped. This map, called a phase transformation kinetics diagram, shows distinct regions of crystallization and amorphization and allows important material parameters to be determined. The observed regions were correlated with results from temperature modeling. The minimum crystallization time was measured to be 50 ns for pure Te and increases to 550 ns for Te80Sn20 and 80 μs for Te90Ge10. A boundary, determined by the critical quench rate, separates the region of melt followed by amorphous quench, from melt followed by crystallization. Three methods of reversible cycling are demonstrated.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
64.70.D- Solid-liquid transitions

Laser energy deposition at sapphire surfaces studied by pulsed photothermal deformation

R. W. Dreyfus, F. A. McDonald, and R. J. von Gutfeld

Appl. Phys. Lett. 50, 1491 (1987); http://dx.doi.org/10.1063/1.97809 (3 pages) | Cited 8 times

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A surface deformation technique measures the energy deposited in sapphire surfaces irradiated by focused excimer laser light. The absorbed energy creates ≲3 electron‐hole pairs/oxygen atom, consistent with a photochemical etching mechanism.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
79.20.Ds Laser-beam impact phenomena
81.65.-b Surface treatments
81.40.Lm Deformation, plasticity, and creep

Picosecond excite‐and‐probe absorption measurement of the intra‐2EgE3/2‐state vibrational relaxation time in Ti3+:Al2O3

S. K. Gayen, W. B. Wang, V. Petričević, K. M. Yoo, and R. R. Alfano

Appl. Phys. Lett. 50, 1494 (1987); http://dx.doi.org/10.1063/1.97810 (3 pages) | Cited 8 times

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See Also: Erratum

Show Abstract
The kinetics of vibrational transitions in the 2EgE3/2 electronic state of Ti3+:Al2O3 is studied by exciting higher lying vibrational levels of the state by a 527‐nm picosecond pump pulse, and monitoring the subsequent growth of population in the zero vibrational level and lower lying vibrational levels by a 3.9‐μm picosecond probe pulse. An upper limit of 3.5 ps for intra‐2EgE3/2 ‐state vibrational relaxation time is estimated.
Show PACS
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
71.55.Gs II-VI semiconductors
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Fluorine in low‐pressure chemical vapor deposited W/Si contact structures: Inclusion and thermal stability

H. J. Whitlow, Th. Eriksson, M. Östling, C. S. Petersson, J. Keinonen, and A. Anttila

Appl. Phys. Lett. 50, 1497 (1987); http://dx.doi.org/10.1063/1.97811 (3 pages) | Cited 9 times

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Concentration distributions of fluorine in low‐pressure chemical vapor deposited W/(100)Si structures have been studied by the nuclear resonance broadening technique through the reaction 19F( p,αγ)16O. In unannealed structures the total fluorine content (4.8×1015 at. cm−2) was chiefly concentrated around the W/Si interface. No loss or redistribution of fluorine was observed on annealing at a temperature of 600 °C or below where no silicide formation took place. About 20% reduction of the fluorine content was observed after annealing at 700 °C and above where WSi2 formation occurred. No evidence of fluorine diffusion into the silicon substrate was seen for annealing up to 900 °C for 1 h.
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68.35.Dv Composition, segregation; defects and impurities
68.35.Fx Diffusion; interface formation
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Metastable thermal donor states in silicon

Alain Chantre

Appl. Phys. Lett. 50, 1500 (1987); http://dx.doi.org/10.1063/1.97812 (3 pages) | Cited 8 times

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Deep level transient spectroscopy has been applied to the study of defects introduced in silicon by short heat treatments at 450 °C. The behavior of an electron trap at Ec−0.15 eV is shown to provide strong evidence for the bistable nature of small thermal donor clusters.
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71.55.Ht Other nonmetals
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
66.30.J- Diffusion of impurities
61.72.Bb Theories and models of crystal defects

Dependence of resonant tunneling current on Al mole fractions in AlxGa1−xAs‐GaAs‐AlxGa1−xAs double barrier structures

Masahiro Tsuchiya and Hiroyuki Sakaki

Appl. Phys. Lett. 50, 1503 (1987); http://dx.doi.org/10.1063/1.97813 (3 pages) | Cited 33 times

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Electron transport in AlxGa1−xAs‐GaAs‐AlxGa1−xAs double barrier tunneling structures is studied as a function of Al content x in the barrier for the case where the thickness of the barrier is 11 atomic layers and that of the GaAs well layer is 7 nm. It is shown that the density JRT of resonant tunneling current varies systematically from 7.0×102 to 3.5×104 A cm−2 as x is varied from 1.0 to 0.43. These data are found to be quantitatively explained by the theoretical calculation, in which the band discontinuity at Γ valley is taken as the barrier height. This result indicates that the electron tunneling through the double barrier structure is dominated by the barrier height of Γ minimum even when the subsidiary minima have lower energies (0.45≤x≤1.0).
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
73.50.-h Electronic transport phenomena in thin films

Near threshold sputtering of Si and SiO2 in a Cl2 environment

D. J. Oostra, R. P. van Ingen, A. Haring, A. E. de Vries, and G. N. A. van Veen

Appl. Phys. Lett. 50, 1506 (1987); http://dx.doi.org/10.1063/1.97814 (3 pages) | Cited 30 times

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Si sputtering yields and Si to SiO2 etch rate ratios have been determined by measuring the depth of the etched craters after Ar+ ion bombardment. The experiments have been performed with energies down to 50 eV both with and without Cl2. Surprisingly high Si sputtering yields are obtained in a Cl2 environment by low‐energy Ar+ ions. Hence, the influence of Cl2 on the Si sputtering mechanism is much larger for low ion energies than for high ion energies. Whereas the Si sputtering yield is enhanced by the presence of Cl2, the SiO2 sputtering yield is hardly affected. Therefore, large differences in the etch rate (high selectivities) between Si and SiO2 are obtained at low ion energies.
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81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

InGaP/InP waveguides

C. H. Joyner, A. G. Dentai, R. C. Alferness, L. L. Buhl, M. D. Divino, and W. C. Dautremont‐Smith

Appl. Phys. Lett. 50, 1509 (1987); http://dx.doi.org/10.1063/1.97815 (3 pages) | Cited 4 times

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We have made InGaP/InP waveguides on InP substrates by atmospheric pressure metalorganic vapor phase epitaxy. The introduction of Ga in the cladding layers causes a large relative index change (Δn=0 to >0.18) that can be varied with the Ga concentration (Δn=0.18 with Ga at 5×1019 cm−3), creating strong, low loss (∼1.25 dB/cm) waveguides. In addition some of these structures were doped with Fe, using ferrocene as the Fe doping source. Typical resistivities of 107 Ω cm have been achieved at Fe concentrations of 5×1017 cm−3, allowing electric fields in excess of 10 000 V/cm to be applied to the waveguides. InGaP/InP Fe‐doped waveguides should prove extremely useful in fabricating switches, modulators, couplers, and filters for integrated optics devices.
Show PACS
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
72.80.Ey III-V and II-VI semiconductors

Two‐ and three‐dimensional magnetoluminescence measurements in a GaAs/AlGaAs multiple quantum well

G. R. Johnson, B. C. Cavenett, A. Kana’ah, E. J. Pakulis, and W. I. Wang

Appl. Phys. Lett. 50, 1512 (1987); http://dx.doi.org/10.1063/1.97816 (3 pages) | Cited 2 times

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We report a direct means of distinguishing between the two‐dimensional and three‐dimensional nature of luminescence bands in multilayered structures. Fixed energy interband excitation of a GaAs/AlGaAs multiple quantum well structure reveals oscillations of the luminescence intensity in a varying magnetic field resulting from resonant excitations between the electron and hole Landau levels. An angular dependence of the position of these Shubnikov–de Haas type oscillations shows directly the two‐dimensional nature of the origin of a luminescence band.
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78.20.Ls Magneto-optical effects
78.55.Cr III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Monolithic integrated InGaAlAs/InP ridge waveguide photodiodes for 1.55 μm operation grown by molecular beam epitaxy

P. Cinguino, F. Genova, C. Rigo, C. Cacciatore, and A. Stano

Appl. Phys. Lett. 50, 1515 (1987); http://dx.doi.org/10.1063/1.97817 (3 pages) | Cited 7 times

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The monolithic integration of a low loss InGaAlAs ridge waveguide with a low leakage InGaAs photodiode is demonstrated. The structure has been grown by molecular beam epitaxy on an n+‐InP substrate, using an InGaAlAs layer with a band gap of 1.29 μm, suitable for waveguiding at 1.55 μm wavelength. Absorption of the guided light is provided by leaky coupling from the InGaAlAs guiding layer into the higher index InGaAs absorbing region containing a p/n junction. The devices showed external quantum efficiencies as high as 20% for operation at 1.55 μm wavelength. This is the first demonstration of a monolithic integrated waveguide device in the InGaAlAs/InP material system.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.82.-m Integrated optics

Stark effect in AlxGa1−xAs/GaAs coupled quantum wells

H. Q. Le, J. J. Zayhowski, and W. D. Goodhue

Appl. Phys. Lett. 50, 1518 (1987); http://dx.doi.org/10.1063/1.97818 (3 pages) | Cited 74 times

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Optical spectra near the band edges of AlxGa1−xAs/GaAs coupled quantum well structures are found to exhibit rich structure. Under the Stark perturbation, these transitions have behavior remarkably different from those associated with single quantum wells. Positive energy shifts and high sensitivity to electric fields have been observed and interpreted as evidence of well coupling. Results of a simple numerical calculation support this interpretation.
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71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon films

Z E. Smith, V. Chu, K. Shepard, S. Aljishi, D. Slobodin, J. Kolodzey, S. Wagner, and T. L. Chu

Appl. Phys. Lett. 50, 1521 (1987); http://dx.doi.org/10.1063/1.97819 (3 pages) | Cited 105 times

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The sub‐band‐gap optical absorption spectra of high‐quality hydrogenated amorphous silicon (a‐Si:H) films are shown to be dominated by surface and interface state absorption when measured by photothermal deflection spectroscopy (PDS), while spectra determined using the constant photocurrent method (CPM) are not. For bulk defect states (both as‐deposited and light‐induced), the integrated subgap absorption is approximately twice as large for PDS as for CPM. Similarly, the conversion factor relating integrated subgap absorption with neutral dangling bond density is twice as large for CPM as PDS. This factor of 2 results from CPM seeing only transitions from below midgap into the conduction band while PDS sees transitions from the valence band into states above midgap as well.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.20.Hb Impurity and defect levels; energy states of adsorbed species
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.66.-w Optical properties of specific thin films

Effect of heat treatments on the electrical resistivity of polycrystalline silicon films implanted with antimony

Y. Komem and H. B. Harrison

Appl. Phys. Lett. 50, 1524 (1987); http://dx.doi.org/10.1063/1.97820 (3 pages) | Cited 3 times

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Polycrystalline silicon films, ion implanted with antimony to a dose of 1–3×1015/cm2 at an energy of 100 keV, were heat treated by means of rapid thermal or conventional furnace techniques. It was found that the electrical resistivity is a function of time, reaching a minimum value that is relatively lower at 600 than 900 °C for heat treatment times that are short enough to avoid significant lattice diffusion, and then increasing with time. However, in cases where longer times at high temperatures (between 860 and 975 °C) are used in order to provide sufficient atom movement, the resistivity increases with decrease in temperature. The results are explained on the basis of recrystallization, diffusion, and segregation processes.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
66.30.J- Diffusion of impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Hydrogen evolution in aluminum plasma deposited silicon nitride layered structures

T. Kikkawa, H. Watanabe, and T. Murata

Appl. Phys. Lett. 50, 1527 (1987); http://dx.doi.org/10.1063/1.98254 (3 pages) | Cited 2 times

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Blisters and voids in aluminum plasma enhanced chemical vapor deposited silicon nitride layered structures are studied. Results from evolved gas analysis have indicated release of hydrogen. Hydrogen evolution from silicon/nitride/aluminum/phosphosilicate glass/silicon layered structure showed a sharp peak in the temperature range between 580 and 660 °C. The results indicated that the accumulation of high pressure hydrogen gas evolved from the silicon nitride film and trapped at the aluminum silicon nitride interface could be the most dominant mechanism of the blister and void formation.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Fx Diffusion; interface formation
68.35.Dv Composition, segregation; defects and impurities
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Effects of hydrogen ion implantation on Al/Si Schottky diodes

A. S. Yapsir, P. Hadizad, T.‐M. Lu, J. C. Corelli, W. A. Lanford, and H. Bakhru

Appl. Phys. Lett. 50, 1530 (1987); http://dx.doi.org/10.1063/1.97821 (3 pages) | Cited 11 times

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Al/Si(p) and Al/Si(n) Schottky diodes were implanted with hydrogen ions such that the peak of the hydrogen distribution was localized at the metal‐semiconductor interface. Current‐voltage (I‐V) measurements indicated more ohmic behavior in the Al/Si(n) and more rectifying behavior in the Al/Si(p) diodes. For both cases, annealing at 200 °C for 30 min caused the I‐V curves to almost revert to the pre‐implantation characteristics. A similar behavior was observed using the capacitance‐voltage (C‐V) measurement technique. No significant change of the hydrogen concentration or redistribution of the concentration was observed after the 200 °C heat treatment. Correlation between the hydrogen depth profiling data and the electrical measurements indicated that, as far as I‐V and C‐V were concerned, the implanted hydrogens were electrically inactive.
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73.30.+y Surface double layers, Schottky barriers, and work functions
81.40.Rs Electrical and magnetic properties related to treatment conditions
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.40.Ns Metal-nonmetal contacts
FREE

Comment on “Temperature dependence of electrical properties of non‐doped and nitrogen‐doped beta‐SiC single crystals grown by chemical vapor deposition”

B. Segall, S. A. Alterovitz, E. J. Haugland, and L. G. Matus

Appl. Phys. Lett. 50, 1533 (1987); http://dx.doi.org/10.1063/1.4729446 (2 pages) | Cited 15 times

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Abstract Unavailable
Show PACS
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.40.Rs Electrical and magnetic properties related to treatment conditions
FREE

Response to ‘‘Comment on ‘Temperature dependence of electrical properties of non‐doped and nitrogen‐doped beta‐SiC single crystals grown by chemical vapor deposition’ ’’ [Appl. Phys. Lett. 50, 1533 (1987)]

Akira Suzuki, Atsuko Uemoto, Mitsuhiro Shigeta, Katsuki Furukawa, and Shigeo Nakajima

Appl. Phys. Lett. 50, 1534 (1987); http://dx.doi.org/10.1063/1.97772 (1 page) | Cited 4 times

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Abstract Unavailable
Show PACS
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.40.Rs Electrical and magnetic properties related to treatment conditions
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