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1 Jun 1987

Volume 50, Issue 22, pp. 1541-1611

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Single‐lobed far‐field pattern operation in a phased array with an integrated phase shifter

M. Matsumoto, M. Taneya, S. Matsui, S. Yano, and T. Hijikata

Appl. Phys. Lett. 50, 1541 (1987); http://dx.doi.org/10.1063/1.97773 (3 pages) | Cited 11 times

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A phased array with an integrated phase shifter which can convert a 180° phase mode into an in‐phase mode was demonstrated. An Al2O3 facet coating with a different thickness on each array element was performed. It should act as the phase shifter. A stable single‐lobed far‐field pattern was obtained from the array with the phase shifter.
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42.82.-m Integrated optics
42.79.Hp Optical processors, correlators, and modulators
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Optical anisotropy in compositionally modulated Cu‐Ni films by spectroscopic ellipsometry

N. K. Flevaris and S. Logothetidis

Appl. Phys. Lett. 50, 1544 (1987); http://dx.doi.org/10.1063/1.97774 (3 pages) | Cited 5 times

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Spectroscopic ellipsometry studies (1.66–5.5 eV) of Cu‐Ni thin films, containing short (0.62 and 4.13 nm) lattice‐commensurate modulation wavelengths, have revealed a strong anisotropy of the dielectric function. These observations are discussed, in accordance with theoretical predictions for superlattices, in terms of the coherency strains. Other possible sources of anisotropy are also discussed in conjunction with other studies.
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78.66.Bz Metals and metallic alloys
77.22.Ch Permittivity (dielectric function)

Polarization and frequency control of a semiconductor laser with a new external cavity structure

S. Wakana, M. Shirasaki, Y. Furukawa, and T. Inagaki

Appl. Phys. Lett. 50, 1547 (1987); http://dx.doi.org/10.1063/1.97775 (3 pages) | Cited 9 times

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A technique using a new external cavity structure to cause degeneration at the frequencies of two orthogonally polarized modes and to control the polarization and the frequency in a semiconductor laser has been devised. The phase difference between the polarizations in the gain medium can be canceled in a round trip through quarter‐wave plates set in the cavity. By rotating one of the quarter‐wave plates, orthogonally polarized laser beams can theoretically be made to oscillate at slightly different frequencies. Experimentally, two orthogonally polarized oscillations with rather large frequency differences occurred. The difference between the two frequencies alternated according to the quarter‐wave plate rotation. This phenomenon could be explained theoretically.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

In‐phase coupling between ridge guide lasers by introducing distributed saturable absorption regions in subordinate laser cavities

L. D. Zhu, G. B. Feak, J. M. Ballantyne, D. K. Wagner, and Peter Tihanyi

Appl. Phys. Lett. 50, 1550 (1987); http://dx.doi.org/10.1063/1.97776 (3 pages) | Cited 1 time

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Stable in‐phase coupled supermode operation of a ridge waveguide laser array is achieved by introducing distributed saturable absorption regions in subordinate laser cavities. Diffraction‐limited single‐lobed emission beams were attained up to 27 mW per laser stripe, and threshold current for the array was kept near 10 mA per laser stripe.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

cw and pulsed 2.8 μm laser emission from diode‐pumped Er3+:LiYF4 at room temperature

G. J. Kintz, R. Allen, and L. Esterowitz

Appl. Phys. Lett. 50, 1553 (1987); http://dx.doi.org/10.1063/1.97777 (3 pages) | Cited 37 times

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Laser emission at 2.8 μm from an Er3+:LiYF4 sample longitudinally pumped with a multiple stripe laser diode array is observed for the first time. The threshold for pulsed laser emission is 33 μJ and for cw laser emission 147 mW. cw laser action in this normally self‐terminating laser transition is attributed to a cooperative up‐conversion process.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Transmission of pulsed laser beams through ‘‘opaque’’ liquids by a cavitation effect

A. Sa’ar, D. Gal, R. Wallach, S. Akselrod, and A. Katzir

Appl. Phys. Lett. 50, 1556 (1987); http://dx.doi.org/10.1063/1.97778 (3 pages) | Cited 6 times

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Stationary cavities were formed in liquids by trains of laser pulses having the following characteristics: high absorption, high repetition rate, and high energy per pulse. Under these conditions laser pulses may be transmitted through several millimeters of ‘‘opaque’’ liquids by a cavitation effect. This facilitates material cutting and laser surgical operation under blood or under water by CO2 or excimer lasers. A simple model is presented to explain the cavitation effect.
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42.25.Bs Wave propagation, transmission and absorption
42.25.Dd Wave propagation in random media
47.55.dp Cavitation and boiling
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
87.50.S- Radiofrequency/microwave fields effects
87.50.W- Optical/infrared radiation effects

Optical bistability and gating in metalorganic vapor phase epitaxy grown GaAs étalons operating in reflection

Olof Sahlén, Ulf Olin, Eric Masseboeuf, Gunnar Landgren, and Michael Rask

Appl. Phys. Lett. 50, 1559 (1987); http://dx.doi.org/10.1063/1.97779 (3 pages) | Cited 20 times

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Nonlinear Fabry–Perot étalons of GaAs have been fabricated with metalorganic vapor phase epitaxy technology. The étalons operate in reflection mode, and have an epitaxially grown, rear dielectric mirror consisting of a stack of alternating AlAs/GaAlAs layers. Optical logic functions using a HeNe laser and optical bistability at room temperature are reported. Low switching powers and improved étalon uniformity are obtained.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Dj Gratings
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Beam propagation study of nonlinear coupling between transverse electric modes of a slab waveguide

N. Finlayson, E. M. Wright, C. T. Seaton, G. I. Stegeman, and Y. Silberberg

Appl. Phys. Lett. 50, 1562 (1987); http://dx.doi.org/10.1063/1.97780 (3 pages) | Cited 15 times

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The evolution of an optical field along a symmetrical slab waveguide capable of supporting two TE modes in the linear regime is investigated using the beam propagation method (BPM) where the waveguide and cladding media have a uniform, self‐focusing Kerr law nonlinearity. BPM calculations agree well with coupled‐mode theory at low input powers, but diverge at powers approaching the coupled‐mode value of the critical power and above, due to self‐focusing of the field. At high power, the beam splits into two parts which generate unusual long‐range collision effects.
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42.79.Gn Optical waveguides and couplers
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.25.Lc Birefringence

Residual stress effects on refractive indices in undoped silica‐core single‐mode fibers

Yoshinori Hibino, Fumiaki Hanawa, Tetuju Abe, and Shuichi Shibata

Appl. Phys. Lett. 50, 1565 (1987); http://dx.doi.org/10.1063/1.97781 (2 pages) | Cited 10 times

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It is reported for the first time that refractive indices are reduced remarkably by residual stress in undoped silica‐core/fluorine‐doped silica‐clad single‐mode fibers. The very high residual stress concentrated at the small diameter core is induced by drawing tension because of the difference in viscosity between the core and cladding. The decrease in refractive indices results from photoelastic effects due to residual stress in the core.
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42.81.Gs Birefringence, polarization
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.40.Tv Optical and dielectric properties related to treatment conditions
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

High‐power extended‐cavity laser at 1.3 μm with a single‐mode fiber output port

G. Eisenstein, U. Koren, R. S. Tucker, G. Raybon, A. G. Dentai, L. W. Stulz, and B. I. Miller

Appl. Phys. Lett. 50, 1567 (1987); http://dx.doi.org/10.1063/1.97782 (2 pages) | Cited 1 time

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We describe a high‐power extended‐cavity laser which uses a multiple transverse mode laser as the gain medium and an intracavity single‐mode fiber for mode stabilization. The laser delivers up to 30 mW to a single‐mode fiber.
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42.55.Px Semiconductor lasers; laser diodes
42.81.Qb Fiber waveguides, couplers, and arrays
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Interferometric detection of ultrasound at rough surfaces using optical phase conjugation

M. Paul, B. Betz, and W. Arnold

Appl. Phys. Lett. 50, 1569 (1987); http://dx.doi.org/10.1063/1.97783 (3 pages) | Cited 24 times

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Optical detection of ultrasonic signals of 7.5 MHz center frequency has been carried out by heterodyne interferometry at the rough surface of an aluminum sample. The distorted wave front was reconstructed by optical phase conjugation leading to an increase of the light‐gathering power of the interferometer.
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43.35.Zc Use of ultrasonics in nondestructive testing, industrial processes, and industrial products
07.60.Ly Interferometers
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Measurements of axial nonuniformities in gas‐puff implosions

W. W. Hsing and J. L. Porter

Appl. Phys. Lett. 50, 1572 (1987); http://dx.doi.org/10.1063/1.97784 (3 pages) | Cited 12 times

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Large‐scale‐length axial nonuniformities in imploding z pinches have been measured with a time‐resolved framing pinhole camera and a filtered x‐ray diode. The nonuniform initial conditions of the annular gas column result in a nonsimultaneous stagnation along the pinch axis. By tailoring the initial gas‐puff density distribution we have reduced the time interval of stagnation from 10 ns to below 4 ns for a 2‐cm‐long pinch.
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52.55.Ez Theta pinch
52.50.Lp Plasma production and heating by shock waves and compression

New approach to the kinetics of silicon vapor phase epitaxy at reduced temperature

D. J. Robbins and I. M. Young

Appl. Phys. Lett. 50, 1575 (1987); http://dx.doi.org/10.1063/1.97785 (3 pages) | Cited 22 times

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The rate of silicon homoepitaxy from SiH4/H2 mixtures has been studied between 750 and 850 °C using a new ultrahigh‐vacuum‐compatible low pressure reactor. The analysis of the experimental data is novel in including the effects of both nonepitaxial deposition within the reactor and of gas pumping speed. Epitaxy by pyrolysis of SiH4/H2 mixtures on clean Si substrates between 800 and 850 °C is first order in SiH4 pressure but zero order in H2 pressure at least to 1 mm Hg. The results do not support models of growth mechanism derived from previous studies.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Formation of amorphous Ni‐Zr alloys by mechanical alloying of mixtures of the intermetallic compounds Ni11Zr9 and NiZr2

P. Y. Lee and C. C. Koch

Appl. Phys. Lett. 50, 1578 (1987); http://dx.doi.org/10.1063/1.98252 (3 pages) | Cited 28 times

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Amorphous Ni40Zr60 and Ni50Zr50 alloy powders were synthesized by mechanical alloying of mixtures of the intermetallic compounds Ni11Zr9 and NiZr2. Milling these compounds together in the proper proportions resulted in material transfer and amorphization of alloys with compositions Ni40Zr60 and Ni50Zr50. After crystallization in a differential scanning calorimeter, the same products of crystallization were observed as for crystallization of liquid quenched amorphous alloys of the same compositions. The driving force for the amorphization of Ni11Zr9+NiZr2 mixtures is believed to be either the steep rise in free energy of the line compounds as material transfer moves their compositions off stoichiometry, or the creation of a critical defect concentration in the intermetallic compounds.
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61.43.Fs Glasses
61.43.-j Disordered solids
81.05.Kf Glasses (including metallic glasses)

Influence of conductor linewidth on short‐circuit failure

Janet M. Towner

Appl. Phys. Lett. 50, 1581 (1987); http://dx.doi.org/10.1063/1.97786 (2 pages)

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A study was made on the influence of conductor linewidth on electromigration‐induced short‐circuit failure in layered TiW/Al‐1% Cu conductors. Experimental results suggest that the median time to failure is constant for conductors wider than a critical dimension.
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85.40.Bh Computer-aided design of microcircuits; layout and modeling
66.30.Qa Electromigration
66.30.Fq Self-diffusion in metals, semimetals, and alloys

Determination of the band‐edge offset in heterojunctions by electron beam induced current (GaAs/GaAlAs)

A. Eisenbeiss, H. Heinrich, J. Opschoor, R. P. Tijburg, and H. Preier

Appl. Phys. Lett. 50, 1583 (1987); http://dx.doi.org/10.1063/1.97787 (3 pages) | Cited 8 times

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The electron beam induced current generated at a GaAs/Ga0.48Al0.52As heterojunction was investigated as a function of externally applied bias. In the absence of interface charge the flatband voltage was determined and the band‐edge offset evaluated. For the valence‐band‐edge offset 5.5 meV/% Al was obtained.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

p on n ion‐implanted junctions in liquid phase epitaxy HgCdTe layers on CdTe substrates

L. O. Bubulac, D. S. Lo, W. E. Tennant, D. D. Edwall, J. C. Chen, J. Ratusnik, J. C. Robinson, and G. Bostrup

Appl. Phys. Lett. 50, 1586 (1987); http://dx.doi.org/10.1063/1.97788 (3 pages) | Cited 13 times

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The first demonstrated achievement of p on n‐type activated junctions in HgCdTe material by arsenic ion implantation is reported. The junctions were formed by treating the implant as a finite diffusion source in the post‐implant anneals. The materials employed for this study were n‐type indium impurity‐doped liquid phase epitaxy HgCdTe grown on CdTe. Arsenic was selected as the candidate acceptor impurity since it activated during post‐implanted anneals in Hg vapor. The arsenic concentration profile determined by secondary ion mass spectroscopy showed that during post‐implant anneal a complex diffusion mechanism redistributes the arsenic. The activation efficiency appears to be mechanism dependent. In the junction region the implant activation efficiency is about 50%. Junction depth can be controlled by varying arsenic diffusion and background carrier concentration. Junction depths determined by the electron beam induced current technique were consistent with the differential Hall electrical profiles. A p on n junction is shown with excellent rectification characteristics and high breakdown voltage (sharp at 2.5 V and 77 °C). This was obtained from a liquid phase epitaxy Hg1−xCdxTe, with a compositional factor of x=0.23.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
61.72.U- Doping and impurity implantation
85.60.-q Optoelectronic devices

Dot lithography for zero‐dimensional quantum wells using focused ion beams

R. L. Kubena, R. J. Joyce, J. W. Ward, H. L. Garvin, F. P. Stratton, and R. G. Brault

Appl. Phys. Lett. 50, 1589 (1987); http://dx.doi.org/10.1063/1.97789 (3 pages) | Cited 11 times

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A 50‐keV focused Ga+ beam formed in a two‐lens microprobe column with prefinal lens deflection was used to expose dot arrays in a negative acting bilevel resist. Dot arrays 600 μm×600 μm with 600‐Å‐diam resist posts on 0.6 μm centers (incorporating 1024×1024 dots) were fabricated with ion exposure times of 18 s. By reducing the beam dwell time by a factor of 2, roughly 300‐Å‐diam posts were fabricated. Since the ions stop in the bottom resist layer and do not enter the substrate, the optical properties of underlying material should not be altered by damage from the exposure process.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams

Activation efficiency improvement in Si‐implanted GaAs by P co‐implantation

Fumiaki Hyuga, Hajime Yamazaki, Kazuo Watanabe, and Jiro Osaka

Appl. Phys. Lett. 50, 1592 (1987); http://dx.doi.org/10.1063/1.97790 (3 pages) | Cited 29 times

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Co‐implantation effects of N, P, and As are studied for Si‐implanted GaAs by the Hall effect and photoluminescence measurements. The P co‐implantation enhances and homogenizes the activation efficiency of the implanted Si, and decreases photoluminescence peak intensities of the SiAs and the GaAs acceptors. It also suppresses the variation of the Si activation efficiency among the crystal ingots by half. These results indicate that P co‐implantation is a promising method for fabricating active layers of high‐performance GaAs large scale integrated circuits.
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61.72.U- Doping and impurity implantation
72.80.Ey III-V and II-VI semiconductors
85.30.De Semiconductor-device characterization, design, and modeling

Origin of the band‐edge states in [001] thin superlattices of GaAs/AlAs

J. S. Nelson, C. Y. Fong, and Inder P. Batra

Appl. Phys. Lett. 50, 1595 (1987); http://dx.doi.org/10.1063/1.97791 (3 pages) | Cited 14 times

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The self‐consistent pseudopotential method is used to investigate the origin of the valence‐ and conduction‐band edge states in thin [001] superlattices of (GaAs)n‐(AlAs)n, for n=2, 3, and 4. We find that these superlattices have a staggered band alignment (type II superlattice), with the highest occupied valence‐band state (hole) localized in the GaAs region and the lowest unoccupied conduction‐band state (electron) localized in the AlAs region. The change in the lowest conduction‐band edge states in the GaAs and AlAs region with layer thickness, suggests a transition to a nonstaggered alignment (type I superlattice) at large layer thicknesses. A critical layer thickness is estimated for this transition.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Stable, self‐aligned TiNxOy/TiSi2 contact formation for submicron device applications

Y. H. Ku, E. Louis, D. K. Shih, S. K. Lee, D. L. Kwong, and N. S. Alvi

Appl. Phys. Lett. 50, 1598 (1987); http://dx.doi.org/10.1063/1.97792 (3 pages) | Cited 6 times

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The formation of the TiNxOy/TiSi2 bilayer on Si by rapid thermal nitridation of titanium silicide in NH3 has been studied. The chemical stability in dilute HF and the effectiveness of TiNxOy on TiSi2 as a diffusion barrier for Al are discussed. The results show that this bilayer has good chemical stability in dilute HF at least for 60 s and Al/TiNxOy/TiSi2/Si is thermally stable up to 500 °C for 30 min sintering.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.65.-b Surface treatments

Secondary ion mass spectrometry of hyper‐abrupt doping transitions fabricated by limited reaction processing

J. E. Turner, Jun Amano, C. M. Gronet, and J. F. Gibbons

Appl. Phys. Lett. 50, 1601 (1987); http://dx.doi.org/10.1063/1.97793 (3 pages) | Cited 5 times

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Secondary ion mass spectrometry (SIMS) is used to quantify the abruptness of hyper‐abrupt B‐doping profiles in epitaxial silicon grown by limited reaction processing (LRP). By measuring the abruptness of dopant profiles as a function of SIMS primary beam energy and extrapolating to zero energy, doping roll‐off decay lengths less than 20 Å are found for both the trailing and leading edges of LRP structures fabricated at 900 °C. Doping abruptness is limited by diffusional broadening during subsequent epitaxial growth. An asymmetry in leading and trailing edges of doping profiles is shown to be a SIMS sputter artifact, and the ratio of extracted decay lengths at these interfaces is predicted from elementary recoil events. A proportionality is found between sputter broadening of the doping profile and Monte Carlo calculations of dopant recoil depth.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
66.30.J- Diffusion of impurities

Effects of coherency strain on the band gap of pseudomorphic InxGa1−xAs on (001) InP

R. People

Appl. Phys. Lett. 50, 1604 (1987); http://dx.doi.org/10.1063/1.97794 (3 pages) | Cited 31 times

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The effects of lattice mismatch induced coherency strain on the direct (Γ) band gap of InxGa1−xAs alloys for commensurate growth on (001) InP substrates are presented. It is found that the low‐temperature (T≊2 K) band gap of the strained ternary varies between 1.0 and 0.48 eV for 0≤x≤1.0. The band‐gap difference ΔEg between the strained ternary and cubic InP varies therefore between 0.42 and 0.94 eV. The partitioning of ΔEg between conduction and valence bands has yet to be determined for nonlattice‐matched compositions (i.e., x≠0.53). In view of the large calculated variation in ΔEg it is anticipated that coherency strain may provide a means for tailoring band discontinuities in this technologically important materials system. Potential applications are briefly reviewed.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
85.60.-q Optoelectronic devices
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Spatial variation of the observed energy gap in granular superconducting NbN films

J. R. Kirtley, S. I. Raider, R. M. Feenstra, and A. P. Fein

Appl. Phys. Lett. 50, 1607 (1987); http://dx.doi.org/10.1063/1.97795 (3 pages) | Cited 15 times

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We have simultaneously measured the surface topography and the tunneling current‐voltage (I‐V) characteristics of thin films of NbN as a function of lateral position using a low‐temperature scanning tunneling microscope. We have imaged the superconducting energy gap by fitting the I‐V’s with an energy gap for each spatial position. Such images showed significant variation of the gap, including areas with reduced gap when a magnetic field (up to 6 T) was applied. The features in the gap image were often correlated with features in the surface topographic images.
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74.50.+r Tunneling phenomena; Josephson effects
74.25.Op Mixed states, critical fields, and surface sheaths
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
FREE

Comment on ‘‘Observation of a negative differential resistance due to tunneling through a single barrier into a quantum well’’ [Appl. Phys. Lett. 49, 70 (1986)]

E. Wolak, Alex Harwit, and J. S. Harris

Appl. Phys. Lett. 50, 1610 (1987); http://dx.doi.org/10.1063/1.97796 (1 page) | Cited 5 times

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Abstract Unavailable
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73.40.Gk Tunneling
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
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