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8 Jun 1987

Volume 50, Issue 23, pp. 1619-1696

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Evidence of strong Auger recombination in semiconductor‐doped glasses

F. de Rougemont, R. Frey, P. Roussignol, D. Ricard, and C. Flytzanis

Appl. Phys. Lett. 50, 1619 (1987); http://dx.doi.org/10.1063/1.97746 (3 pages) | Cited 26 times

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Intracavity nearly degenerate four‐wave mixing has been used together with transmission measurements to evidence the important role played by Auger recombination in the relaxation rate of electron‐hole pairs in semiconductor‐doped glasses pumped by high laser intensities. Results show a shortening by a factor of 100 of the recombination carrier lifetime when the laser intensity is near damage threshold.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

GaAs/AlGaAs distributed feedback transverse junction stripe laser grown by molecular beam epitaxy

K. Mitsunaga, S. Noda, K. Kojima, M. Kameya, K. Kyuma, K. Hamanaka, and T. Nakayama

Appl. Phys. Lett. 50, 1622 (1987); http://dx.doi.org/10.1063/1.97747 (3 pages) | Cited 3 times

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GaAs/AlGaAs transverse junction stripe lasers with a distributed feedback structure were fabricated. The cw threshold current was 27 mA at 20 °C. The laser operated in a pure single longitudinal mode at the wavelength of 867 nm.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Optical switching by saturation‐induced phase changes in an active directional coupler

J. M. Liu and C. Yeh

Appl. Phys. Lett. 50, 1625 (1987); http://dx.doi.org/10.1063/1.97748 (3 pages) | Cited 8 times

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The refractive index in a traveling‐wave semiconductor waveguide amplifier changes with light injection at intensities close to the saturation intensity due to light‐induced changes in the carrier density. The saturation‐induced optical switching in an active directional coupler switch based on this effect is investigated. The system can switch from a cross state at a low input power to a bar state at a high input power. This device may be used as a power‐limiting directional coupler switch with gain in a local area network.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.82.-m Integrated optics
07.60.-j Optical instruments and equipment
42.79.-e Optical elements, devices, and systems

Low‐loss single‐mode GaAs/AlGaAs optical waveguides grown by organometallic vapor phase epitaxy

E. Kapon and R. Bhat

Appl. Phys. Lett. 50, 1628 (1987); http://dx.doi.org/10.1063/1.97749 (3 pages) | Cited 29 times

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We report the fabrication and the characterization of low‐loss, single‐mode GaAs/AlGaAs ridge waveguides. The waveguides were grown by organometallic vapor phase epitaxy and were characterized at 1.52 μm wavelength. Their propagation losses were evaluated by measuring the finesse of the Fabry–Perot waveguide resonators formed by cleaving two opposite ends of these waveguides. Losses as low as 0.15 dB/cm were measured for single‐mode waveguides, which is the lowest value reported to date for single‐mode semiconductor waveguides. Such low‐loss waveguides should be useful in guided‐wave components for integrated optoelectronics.
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42.79.Gn Optical waveguides and couplers
85.60.-q Optoelectronic devices
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics

Optical intensity modulation to 40 GHz using a waveguide electro‐optic switch

S. K. Korotky, G. Eisenstein, R. S. Tucker, J. J. Veselka, and G. Raybon

Appl. Phys. Lett. 50, 1631 (1987); http://dx.doi.org/10.1063/1.97750 (3 pages) | Cited 21 times

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We report the intensity modulation of an optical carrier at frequencies as high as 40 GHz using a Ti:LiNbO3 optical waveguide switch. The device is shown to exhibit a small‐signal electrical 3 dB bandwidth of >22 GHz and −8 dB response at 40 GHz. A high‐speed self‐electro‐optic‐sampling arrangement based on a mode‐locked injection laser is used to observe the modulation in the time domain.
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43.38.Fx Piezoelectric and ferroelectric transducers
43.38.Gy Semiconductor transducers
43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators

Optimizing the performance of AlGaAs graded index separate confining heterostructure quantum well lasers

J. R. Shealy

Appl. Phys. Lett. 50, 1634 (1987); http://dx.doi.org/10.1063/1.97751 (3 pages) | Cited 13 times

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High efficiency AlGaAs laser structures with graded index optical confinement regions and a single GaAs quantum well active region have been prepared using organometallic vapor phase epitaxy. The optimum quantum well thickness was determined to be near 50 Å where low internal losses are realized and the resulting threshold current densities were as low as 175 A/cm2 on single ended devices with a high reflectivity coating on the rear facet. The high injected carrier levels which are associated with thin quantum well structures lead to a severe degradation in device performance if the gain required to reach lasing threshold becomes too large. If the device length, the facet reflectivities, and the operating temperature were chosen to prevent the injected carrier concentrations in the quantum well from reaching a level coincident with the onset of nonradiative carrier loss mechanisms, single ended power efficiencies exceeded 55% for room‐temperature, cw operation at 840 nm.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Low threshold buried heterostructure quantum well diode lasers by laser‐assisted disordering

J. E. Epler, R. D. Burnham, R. L. Thornton, and T. L. Paoli

Appl. Phys. Lett. 50, 1637 (1987); http://dx.doi.org/10.1063/1.97752 (3 pages) | Cited 10 times

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The first buried heterostructure laser diodes fabricated by laser‐assisted disordering, a direct‐write process, are described. In laser‐assisted disordering a focused laser beam is scanned across the AlGaAs‐GaAs heterostructure material to induce local melting and thereby incorporate Si from an encapsulation layer into the regrown crystal. A subsequent thermal anneal (850 °C, 0.7 h) is used to diffuse the Si deeper into the sample to enlarge the disordered region. This combination of patterned crystal regrowth and impurity‐induced disordering is used to fabricate quantum well devices with lasing threshold currents as low as 6 mA (pulsed) and 8 mA (continuous). These devices have a narrow 4.5‐μm‐wide waveguide region and operate with a single longitudinal and spatial mode. They are the first optoelectronic devices fabricated with a direct‐write laser‐assisted process.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.60.Jb Light-emitting devices
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

High‐power AlGaAs/GaAs single quantum well lasers with chemically assisted ion beam etched mirrors

P. Tihanyi, D. K. Wagner, A. J. Roza, H. J. Vollmer, C. M. Harding, R. J. Davis, and E. D. Wolf

Appl. Phys. Lett. 50, 1640 (1987); http://dx.doi.org/10.1063/1.97753 (2 pages) | Cited 10 times

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We report the first use of chemically assisted ion beam etching to form laser mirrors on GaAlAs graded index separate confinement single quantum well heterostructures grown by metalorganic chemical vapor deposition. Over 80 mW cw optical power is obtained from the etched facet of uncoated 300‐μm‐long, etched/cleaved 60 μm stripe devices mounted p side up, and catastrophic failure occurs at a cw power as high as 205 mW. Differential quantum efficiencies for light emitted from the etched facet are 32% pulsed (27% cw) and the threshold current is 145 mA pulsed (150 mA cw).
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.60.Jb Light-emitting devices

High efficiency, multiple layer ZnO acoustic transducers at millimeter‐wave frequencies

B. Hadimioglu, L. J. La Comb, D. R. Wright, B. T. Khuri‐Yakub, and C. F. Quate

Appl. Phys. Lett. 50, 1642 (1987); http://dx.doi.org/10.1063/1.97754 (3 pages) | Cited 12 times

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We have fabricated multiple layer ZnO acoustic transducers for highly efficient sound wave generation at millimeter‐wave frequencies. The transducers consist of half‐wave‐thick layers of ZnO with alternating crystal structure. The two‐way untuned conversion loss values were 27 dB near 29 GHz and 50 dB at 96 GHz measured at liquid nitrogen temperatures.
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43.38.Fx Piezoelectric and ferroelectric transducers
43.38.Gy Semiconductor transducers
43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators

Threshold for argon bubble growth in sputtered amorphous Nb3Ge

A. Pruymboom, P. Berghuis, P. H. Kes, and H. W. Zandbergen

Appl. Phys. Lett. 50, 1645 (1987); http://dx.doi.org/10.1063/1.97755 (3 pages) | Cited 6 times

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We have studied the influence of the bias potential on argon incorporation and bubble formation in sputtered thin films of a‐Nb3Ge. Above 100 V bias bubbles are observed directly by transmission electron microscopy and indirectly by abrupt changes in the electronic properties. The influence of the sputter parameters on argon incorporation at 0 V bias is also investigated.
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61.80.Jh Ion radiation effects
81.15.Cd Deposition by sputtering
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.78.-w Superconducting films and low-dimensional structures

Recrystallization kinetics pattern in III‐V implanted semiconductors

C. Licoppe, Y. I. Nissim, C. Meriadec, and P. Hénoc

Appl. Phys. Lett. 50, 1648 (1987); http://dx.doi.org/10.1063/1.97756 (3 pages) | Cited 8 times

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Solid phase epitaxial regrowth has been studied for a variety of ion‐implanted compound semiconductors. The time‐resolved reflectivity technique is used to determine growth kinetics. It is shown that the growth rate follows a thermal activation law whose activation energy and pre‐exponential factor are measured. In all III‐V compounds and alloys, a common regrowth kinetics behavior is found, with the activation energy proportional to a characteristic vibrational relaxation energy which also intervenes in the description of point defect migration. Differences with the case of column IV semiconductors are discussed.
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81.15.Np Solid phase epitaxy; growth from solid phases
66.30.J- Diffusion of impurities
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)

In situ spectroscopic ellipsometry investigation of the nucleation of microcrystalline silicon

B. Drevillon, C. Godet, and Satyendra Kumar

Appl. Phys. Lett. 50, 1651 (1987); http://dx.doi.org/10.1063/1.97757 (3 pages) | Cited 18 times

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In situ spectroscopic ellipsometry is used to reveal the structural changes that occur in the initial stages of the growth of microcrystalline silicon (μc‐Si) deposited by glow discharge decomposition of a (SiH4,H2) mixture on silica substrates. In a first step, the real time measurements can be described by the following nucleation model: stable nuclei are created, with an average distance between them estimated to be ∼100 Å, followed by the growth of three‐dimensional crystalline islands. In a second step an interfacial component composed of amorphous silicon and voids is produced as a consequence of the incomplete coalescence of the crystalline islands.
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68.55.-a Thin film structure and morphology
68.35.Dv Composition, segregation; defects and impurities
07.60.Fs Polarimeters and ellipsometers

Photoconductive response of PbTe doping superlattices

W. Jantsch, K. Lischka, A. Eisenbeiss, P. Pichler, H. Clemens, and G. Bauer

Appl. Phys. Lett. 50, 1654 (1987); http://dx.doi.org/10.1063/1.97758 (3 pages) | Cited 4 times

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Doping superlattices made of PbTe exhibit excellent photoconductive response with a peak detectivity D∗≥8×1010 cm Hz1/2 W−1, which is close to the theoretical limit at 6 μm wavelength. Lifetime and far‐infrared magneto‐optical investigations show that photogenerated electron‐hole pairs are separated in the periodic electrostatic potential, leading to a lifetime enhancement by nearly two orders of magnitude as compared to homogeneous bulk crystals.
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73.50.Pz Photoconduction and photovoltaic effects
73.61.Ga II-VI semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Effect of a buried superlattice on the dynamic storage of electrons at the AlGaAs/GaAs heterojunction

M. R. Melloch, Q‐D. Qian, and J. A. Cooper

Appl. Phys. Lett. 50, 1657 (1987); http://dx.doi.org/10.1063/1.97759 (3 pages) | Cited 4 times

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A buried five‐period 94 Å Al0.3Ga0.7As/ 56 Å GaAs superlattice is employed to improve the dynamic retention of electrons at an AlGaAs/GaAs heterojunction. The improvement is attributed to the impurity trapping and gettering properties of this superlattice and the amount of time our molecular beam epitaxy system had been closed. Electron retention time constants of 29 s were obtained at a temperature of 77 K. This is more than 200 times longer than previously reported time constants and more than adequate for dynamic logic or memory applications compatible with AlGaAs/GaAs heterojunction field‐effect transistors.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
85.30.Tv Field effect devices

Ultrathin gate oxides formed by catalytic oxidation of silicon

Eva M. Oellig, E. G. Michel, M. C. Asensio, and R. Miranda

Appl. Phys. Lett. 50, 1660 (1987); http://dx.doi.org/10.1063/1.97760 (3 pages) | Cited 37 times

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A recipe to produce ultrathin gate oxides by K‐promoted catalytic oxidation of Si is described. The thickness of the final oxide depends linearly on the amount of K predeposited. The resulting oxide is chemically homogeneous. The process takes place at temperatures much lower than those used in thermal oxidation. The maximum temperature required to desorb the catalyst is 600 °C.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.65.-b Surface treatments
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Electron spin resonance observation of defects in device oxides damaged by soft x rays

B. B. Triplett, T. Takahashi, and T. Sugano

Appl. Phys. Lett. 50, 1663 (1987); http://dx.doi.org/10.1063/1.97761 (3 pages) | Cited 28 times

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We report the use of vacuum soft x‐ray (VXR) exposure to efficiently generate paramagnetic defects in thin oxide layers. The VXR technique allows the observation of an E′ related defect called the 74‐G doublet in quantities as large as the E′. This defect is the first paramagnetic defect observed in thin oxides at room temperature to involve hydrogen.
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76.30.Mi Color centers and other defects
61.80.Cb X-ray effects
61.05.Qr Magnetic resonance techniques; Mössbauer spectroscopy (for structure determination only)
73.61.Ng Insulators

Pair of local vibration mode absorption bands related to EL2 defects in semi‐insulating GaAs

Chunying Song, Weikun Ge, Desheng Jiang, and Chenchia Hsu

Appl. Phys. Lett. 50, 1666 (1987); http://dx.doi.org/10.1063/1.97762 (3 pages) | Cited 27 times

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A pair of correlated bands, which show the same fine structure at low temperature, is discovered in infrared absorption spectra of semi‐insulating GaAs crystals. At 80 K the bands peak at 730 cm−1 and 714 cm−1, respectively. According to the fine structures, the spectral linewidths, and the temperature dependence of frequency shifts, the two absorption bands are identified to be induced by local vibration modes of the same defect. As the interconversion of the two bands under some conditions of illumination and temperature variation is very similar to the transformation between the ground state and the metastable state of the EL2 level, these absorptions are ascribed to be related to the EL2 defect.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
71.55.Eq III-V semiconductors
63.20.Pw Localized modes
78.30.Fs III-V and II-VI semiconductors

Negative differential resistance of double barrier diodes at zero bias

H. C. Liu and D. D. Coon

Appl. Phys. Lett. 50, 1669 (1987); http://dx.doi.org/10.1063/1.98251 (3 pages) | Cited 5 times

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Zero‐bias dc negative differential resistance of double barrier quantum well diodes in an ac field is explained. A physical picture is presented in terms of resonant tunneling phenomena. An adiabatic approximation is used limiting the present approach to applied ac frequencies lower than the ultimate device speed which is of the order of 1 THz for AlxGa1−x As/GaAs devices.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Optically detected electron cyclotron resonance in silicon

E. J. Pakulis and G. A. Northrop

Appl. Phys. Lett. 50, 1672 (1987); http://dx.doi.org/10.1063/1.97763 (3 pages) | Cited 22 times

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The cyclotron resonance of electrons in Si has been optically detected. At resonance, there is a decrease in the luminescence from defects produced near the surface of Si which has been exposed to a dry etching plasma. The resonances are observable optically even when the lines are too broad to be detected directly via microwave absorption measurements. This result, together with the absence of hole resonances, provides clues as to the possible recombination mechanisms at the defects.
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76.40.+b Diamagnetic and cyclotron resonances
78.55.Hx Other solid inorganic materials
68.35.Dv Composition, segregation; defects and impurities
61.80.Jh Ion radiation effects

Surface quantum wells

R. M. Cohen, M. Kitamura, and Z. M. Fang

Appl. Phys. Lett. 50, 1675 (1987); http://dx.doi.org/10.1063/1.97764 (3 pages) | Cited 23 times

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Surface quantum wells of InP have been grown, by organometallic vapor phase epitaxy, on top of graded GaxIn1−xP epitaxial layers. The surface quantum well is confined on one side by vacuum, and on the other side by the graded GaxIn1−xP. Photoluminescence measurements show two transitions for electron‐hole recombination within the surface quantum well. Surface recombination appears to be saturated by the high density of carriers collected in the well, and plays a minor role. The bending of the conduction and valence bands in the GaxIn1−xP leads to a high collection efficiency of excess carriers near the surface, and suggests that high efficiency surface light emitters could be built in similar structures.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.55.Cr III-V semiconductors
73.20.At Surface states, band structure, electron density of states
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Gated diode leakage and lifetime measurements of misfit dislocation gettered Si epitaxy

Ali S. M. Salih, Z. Radzimski, J. Honeycutt, G. A. Rozgonyi, K. E. Bean, and K. Lindberg

Appl. Phys. Lett. 50, 1678 (1987); http://dx.doi.org/10.1063/1.97765 (3 pages) | Cited 13 times

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Gated diode leakage current and minority‐carrier lifetime are compared between Si wafers extrinsically gettered with epitaxial misfit dislocations and reference homoepitaxial material. The stability and gettering efficiency of the interfacial misfit dislocations have been verified by measuring leakage currents of less than 1 nA/cm2 for both gate depletion and accumulation for a large number of diodes. In either mode, the gated diodes with misfit dislocation gettering exhibited more than an order of magnitude lower leakage current than that produced by standard epi without misfit dislocations. In addition, minority‐carrier generation lifetimes greater than 2 ms were typical of material extrinsically gettered via misfit dislocations, while reference epi was two to three times lower. The lifetme was found to be uniform in the near‐surface region, but was drastically reduced in the immediate vicinity of the misfit locations, indicating that the defects may provide useful options in high‐speed devices, latch‐up control, and radiation hard devices.
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85.30.Kk Junction diodes
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.Yx Interaction between different crystal defects; gettering effect
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Low‐temperature organometallic vapor phase epitaxial growth of CdTe using a new organotellurium source

D. W. Kisker, M. L. Steigerwald, T. Y. Kometani, and K. S. Jeffers

Appl. Phys. Lett. 50, 1681 (1987); http://dx.doi.org/10.1063/1.97766 (3 pages) | Cited 16 times

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The growth of CdTe by organometallic vapor phase epitaxy has been accomplished at 250 °C, using a new tellurium source, dimethylditelluride. The compound decomposes at a much lower temperature than the corresponding monotelluride, apparently by reacting with a cadmium‐containing species to eliminate one tellurium atom. As a result, the temperature necessary for deposition of CdTe has been lowered from the range of 400 °C, thus making completely thermally driven chemical vapor deposition of II‐VI compounds possible at much lower temperatures.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Inclined epitaxy of (411) beta silicon carbide on (511) silicon by chemical vapor deposition

Mitsuhiro Shigeta, Kenji Nakanishi, Yoshihisa Fujii, Katsuki Furukawa, Akitsugu Hatano, Atsuko Uemoto, Akira Suzuki, and Shigeo Nakajima

Appl. Phys. Lett. 50, 1684 (1987); http://dx.doi.org/10.1063/1.97767 (2 pages) | Cited 3 times

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Epitaxial growth of β‐SiC on Si(511) substrates has been carried out. Single‐crystalline β‐SiC films without warpage and cracking are grown by chemical vapor deposition. The epitaxial orientation of the film is determined using x‐ray precession camera. The orientation is inclined as SiC(411)//Si(511) coincident with the [011] axis, which should be compared with the parallel epitaxial growth on Si(100) or Si(111).
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Photoluminescence characteristics of AlGaAs‐GaAs single quantum wells grown by migration‐enhanced epitaxy at 300 °C substrate temperature

Yoshiji Horikoshi, Minoru Kawashima, and Hiroshi Yamaguchi

Appl. Phys. Lett. 50, 1686 (1987); http://dx.doi.org/10.1063/1.97768 (2 pages) | Cited 21 times

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When Ga or Al atoms are evaporated on a clean GaAs surface in an As‐free or a very low As pressure atmosphere, they are quite mobile and migrate very rapidly along the surface even at low temperatures. This characteristic is exploited for growing high‐quality GaAs and AlGaAs layers at very low temperatures by alternately supplying Ga and/or Al atoms and As4 molecules to the GaAs substrate. Applying this method, AlGaAs‐GaAs single quantum well structures with excellent photoluminescence characteristics are grown at 300 °C.
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78.55.Cr III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.35.Fx Diffusion; interface formation
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Phase diagram and superconductivity in the Y‐Ba‐Cu‐O system

D. G. Hinks, L. Soderholm, D. W. Capone, J. D. Jorgensen, Ivan K. Schuller, C. U. Segre, K. Zhang, and J. D. Grace

Appl. Phys. Lett. 50, 1688 (1987); http://dx.doi.org/10.1063/1.97769 (3 pages) | Cited 84 times

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We have determined the phase diagram of the Y‐Ba‐Cu‐O system through structural, superconducting critical temperature and critical current density characterization. Our results show that a single‐phase compound with a stoichiometry YBa2Cu3Oy is responsible for the high‐temperature superconductivity (92.5 K) in this system.
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81.30.Bx Phase diagrams of metals, alloys, and oxides
61.50.Nw Crystal stoichiometry
74.10.+v Occurrence, potential candidates
74.70.-b Superconducting materials other than cuprates
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