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15 Jun 1987

Volume 50, Issue 24, pp. 1705-1764


Continuous wave operation of a surface‐emitting AlGaAs/GaAs multiquantum well distributed Bragg reflector laser

Keisuke Kojima, Susumu Noda, Kazumasa Mitsunaga, Kazuo Kyuma, and Koichi Hamanaka

Appl. Phys. Lett. 50, 1705 (1987); http://dx.doi.org/10.1063/1.97721 (3 pages) | Cited 33 times

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The first cw operation of an AlGaAs/GaAs distributed Bragg reflector laser was achieved at room temperature with a threshold current as low as 38 mA. Surface emission exceeding 4 mW was obtained with an external differential quantum efficiency of 9% and a beam divergence of 0.17°×10°. A two‐dimensional laser array with 3×4 gratings was also fabricated and an output power exceeding 500 mW was obtained under pulsed condition.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Passive mode locking of a continuous wave dye laser operating in the blue‐green spectral region

P. M. W. French and J. R. Taylor

Appl. Phys. Lett. 50, 1708 (1987); http://dx.doi.org/10.1063/1.97722 (2 pages) | Cited 5 times

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The passive mode locking of a continuous wave dye laser operating in the blue‐green spectral region is reported for the first time. In a simple linear configuration with no optimization of the intracavity dispersion, coumarin 102, excited by the ultraviolet lines of an argon ion laser, has been mode locked using 3,3′‐diethyl oxacarbocyanine iodide over the spectral range 487–508 nm, yielding pulses as short as 580 fs duration at 498 nm.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Mv Dye lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Multichannel waveguide junctions for guided‐wave optics

Eli Kapon and R. N. Thurston

Appl. Phys. Lett. 50, 1710 (1987); http://dx.doi.org/10.1063/1.97723 (3 pages) | Cited 6 times

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We propose and analyze a new class of multichannel optical waveguide junctions. These junctions consist of a multimode channel waveguide that branches into several single‐mode channels. We show that such waveguide junctions, when properly designed, can route each of the spatial modes of the multimode waveguide into a different single‐mode channel. These waveguide junctions should be useful in selective mode excitation, routing, switching, modulation, and wavelength multiplexing/demultiplexing of guided waves, as well as for mode control in semiconductor lasers.
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42.79.Gn Optical waveguides and couplers
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.60.Fc Modulation, tuning, and mode locking

Injection locking and single‐mode fiber coupling of a 40‐element laser diode array

L. Goldberg and J. F. Weller

Appl. Phys. Lett. 50, 1713 (1987); http://dx.doi.org/10.1063/1.97724 (3 pages) | Cited 11 times

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Near‐diffraction‐limited (0.13° wide) single‐lobe operation of a 40‐element AlGaAs array emitting 510 mW cw is obtained by external injection locking, with 11.0 mW of injected power incident on the array. The injected and the array output beams were tilted relative to the facet normal to allow for spatial separation of the two beams and efficient coupling into a single‐mode fiber; 150 mW was coupled into a 5‐μm core, polarization holding fiber.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.81.Qb Fiber waveguides, couplers, and arrays

Isotopic enrichment in a plasma centrifuge

E. Del Bosco, R. S. Dallaqua, G. O. Ludwig, and J. A. Bittencourt

Appl. Phys. Lett. 50, 1716 (1987); http://dx.doi.org/10.1063/1.97725 (3 pages) | Cited 9 times

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High rotational velocity and centrifugal isotopic separation of carbon in a vacuum‐arc plasma centrifuge are presented. Enrichments of up to 390% for 13C are measured at 6 cm radius with angular rotation frequencies in excess of 1.0×105 rad/s in an axial magnetic field of 0.12 T.
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28.60.+s Isotope separation and enrichment
52.75.-d Plasma devices
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Direct observation by reflection high‐energy electron diffraction of amorphous‐to‐crystalline transition in the growth of Sb on GaAs(110)

D. E. Savage and M. G. Lagally

Appl. Phys. Lett. 50, 1719 (1987); http://dx.doi.org/10.1063/1.97726 (3 pages) | Cited 14 times

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Direct evidence, using reflection high‐energy electron diffraction, is found for a transition, at a specific thickness, from an amorphous to a crystalline state in Sb deposited on GaAs(110). After crystallization, Sb exists as small, 30–40 Å crystallites with a (0001) contact plane but randomly azimuthally oriented. A new surface phase, GaAs(110) p(3×2)‐Sb, is found and appears to be a consequence of the crystallization transition.
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68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)

Interactions of amorphous TaxCu1−x (x=0.93 and 0.80) alloy films with Au overlayers and GaAs substrates

Jae E. Oh, John A. Woollam, and John J. Pouch

Appl. Phys. Lett. 50, 1722 (1987); http://dx.doi.org/10.1063/1.97727 (3 pages)

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Amorphous Ta93Cu7 and Ta80Cu20 alloy films are prepared by co‐sputtering of pure Ta and pure Cu targets with a rotating sample holder table. To investigate the possible application of these materials as diffusion barriers for the Au‐GaAs system, vacuum annealings are made in the temperature range from 200 to 800 °C. Resistivity change, x‐ray diffraction, and Auger electron spectroscopy measurements are performed to find the chemical and metallurgical stabilities of these materials in this system. The reaction temperature for TaxCu1−x in contact with GaAs lies between 500 and 700 °C. For Au in contact with TaxCu1−x the reaction occurs at about 600 °C. Amorphous Ta93Cu7 shows different interdiffusion characteristics with surrounding elements than does Ta80Cu20.
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68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
68.60.Dv Thermal stability; thermal effects

Heteroepitaxial growth of InP directly on Si by low pressure metalorganic chemical vapor deposition

M. K. Lee, D. S. Wuu, and H. H. Tung

Appl. Phys. Lett. 50, 1725 (1987); http://dx.doi.org/10.1063/1.97728 (2 pages) | Cited 20 times

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Heteroepitaxial growth of InP on Si by low pressure metalorganic chemical vapor deposition is reported. The trimethylindium‐trimethylphosphine adduct was used as the In source in this study and PH3 as the source of P. From x‐ray and scanning electron microscopy examinations, good crystallinity InP epilayers with mirrorlike surfaces can be grown directly on (100) and (111) Si substrates. The carrier concentration profile shows that the carrier distribution in the InP epilayer is very uniform. The efficient photoluminescence compared with that of InP homoepitaxy shows that the InP/Si epilayers are of good quality.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Fowler–Nordheim tunneling and conduction‐band discontinuity in GaAs/GaAlAs high electron mobility transistor structures

J. Smoliner, R. Christanell, M. Hauser, E. Gornik, G. Weimann, and K. Ploog

Appl. Phys. Lett. 50, 1727 (1987); http://dx.doi.org/10.1063/1.97729 (3 pages) | Cited 11 times

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Oscillatory structure is observed in the dI/dV and d2I/dV2 characteristics of conventional GaAs/GaAlAs high electron mobility transistor samples at liquid‐helium temperature, which can be explained using a Fowler–Nordheim tunneling theory. The position of the oscillations allows a determination of the conduction‐band discontinuity, and the depth of the deep donor levels in the GaAlAs for high aluminum concentrations. The fit of the data gives a value of ΔEc/ΔEg=0.61±0.04 for aluminum concentration 30, 36, and 40%. The deep donor level in the GaAlAs was determined to be 130 meV below the conduction band.
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73.40.Gk Tunneling
73.20.At Surface states, band structure, electron density of states
85.30.Tv Field effect devices
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Secondary ion mass spectrometry study of oxygen accumulation at GaAs/AlGaAs interfaces grown by molecular beam epitaxy

T. Achtnich, G. Burri, M. A. Py, and M. Ilegems

Appl. Phys. Lett. 50, 1730 (1987); http://dx.doi.org/10.1063/1.97730 (3 pages) | Cited 19 times

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The accumulation of oxygen at GaAs/AlGaAs interfaces grown by molecular beam epitaxy has been established by secondary ion mass spectrometry profiling of GaAs/AlGaAs multilayer structures. An enhanced oxygen peak was observed at the boundary between GaAs and AlxGa1−xAs layers with x=0.35 and x=1 when the binary layer is deposited on top of the ternary layer. The segregation of oxygen may be a contributing factor responsible for the lower luminescence reported in the first GaAs well of multilayer quantum well structures and for the difference between normal and inverted interface high electron mobility devices.
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68.35.Dv Composition, segregation; defects and impurities
68.35.Fx Diffusion; interface formation
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.55.Cr III-V semiconductors

Pentavacancies in plastically deformed silicon

M. Brohl, C. Kisielowski‐Kemmerich, and H. Alexander

Appl. Phys. Lett. 50, 1733 (1987); http://dx.doi.org/10.1063/1.97731 (3 pages) | Cited 9 times

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High‐pressure/low‐temperature plastic deformation of silicon leads to the appearance of new electron spin resonance active centers. One of them could be identified to be the pentavacancy Si‐P1, which also can be produced by irradiation. Depending on the deformation axis the defect occurs in several homologous orientations. Spin‐lattice relaxation time measurements performed on both plastically deformed and neutron‐irradiated silicon show the existence of an Orbach‐type relaxation with an activation energy of about 23 meV corresponding to the thermal excitation energy of the resonant electron into its high‐temperature state.
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61.72.jd Vacancies
61.72.jj Interstitials
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
76.30.Mi Color centers and other defects
81.40.Lm Deformation, plasticity, and creep

Direct evidence of recrystallization rate enhancement during rapid thermal annealing of phosphorus amorphized silicon layers

W. O. Adekoya, M. Hage Ali, J. C. Muller, and P. Siffert

Appl. Phys. Lett. 50, 1736 (1987); http://dx.doi.org/10.1063/1.97732 (3 pages) | Cited 8 times

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The solid phase epitaxial regrowth of implanted phosphorus amorphized 〈100〉 silicon during rapid thermal annealing (RTA) in the temperature range 475–600 °C has been studied using Rutherford backscattering and channeling measurements. Within the temperature range 475–550 °C, our results show an enhancement of growth rate (Vg) by a factor of 4 when compared with values reported in literature for processing in a conventional furnace, with an activation energy of 2.7±0.2 eV. For temperatures above 550 °C, a reduction of this enhancement effect sets in, with a fall in the enhancement factor from 4 at 550 °C to about 1.5 at 600 °C. Estimation of the absolute error in temperature measurement in the RTA furnace shows that the accelerated kinetics cannot be completely explained by such errors as they are small compared to the enhancement rate. These results therefore give evidence of RTA induced enhancement of growth rate during solid phase recrystallization of implantation‐amorphized silicon.
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81.15.Np Solid phase epitaxy; growth from solid phases
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Multilayer step formation after As adsorption on Si (100): Nucleation of GaAs on vicinal Si

P. R. Pukite and P. I. Cohen

Appl. Phys. Lett. 50, 1739 (1987); http://dx.doi.org/10.1063/1.97733 (3 pages) | Cited 54 times

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We have used reflection high‐energy electron diffraction to characterize the initial surface of misoriented Si (100) and then to follow the nucleation of GaAs. Measurement of the diffracted intensity along the length of the specular streak shows sharp structure due to an ordered array of steps. The initial surface contains monolayer steps. However, after exposing to an As4 flux above 650 °C, the surface morphology changes to multilayer steps with four times the original period. In contrast, below 650 °C, surface migration is inhibited and monolayer steps are retained. Subsequent growth of GaAs on either the monolayer‐ or multilayer‐stepped surfaces yields single domain films. However, GaAs grown on the monolayer steps is misoriented toward the (111)A while GaAs grown on the multilayer steps is misoriented toward the (111)B.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Fx Diffusion; interface formation
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Semiconductor topography in aqueous environments: Tunneling microscopy of chemomechanically polished (001) GaAs

Richard Sonnenfeld, J. Schneir, B. Drake, P. K. Hansma, and D. E. Aspnes

Appl. Phys. Lett. 50, 1742 (1987); http://dx.doi.org/10.1063/1.97734 (3 pages) | Cited 29 times

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Scanning tunneling microscopy (STM) of (001) GaAs samples immersed in aqueous solutions has been used to assess the effectiveness of a standard bromine‐methanol chemomechanical polish to produce flat surfaces over length scales from 5 to 1000 nm. The STM images reveal irregular 100‐nm features coexisting with large areas of average roughness of the order of a few nanometers. The precision, stability, and reproducibility of these images suggest that immersion STM could be used to study surface chemical processes in real time.
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81.65.-b Surface treatments
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
68.35.B- Structure of clean surfaces (and surface reconstruction)

Enhanced tail diffusion of ion implanted boron in silicon

D. Fan, J. Huang, R. J. Jaccodine, P. Kahora, and F. Stevie

Appl. Phys. Lett. 50, 1745 (1987); http://dx.doi.org/10.1063/1.97735 (3 pages) | Cited 16 times

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The enhanced diffusion tail of implanted boron in Si was studied using conventional furnace annealing. Surface layer stripping was applied to remove part of the sample before annealing in order to distinguish the effect of the defect‐rich surface region from the tail region on the enhanced diffusion of boron. The boron concentration profiles were obtained with secondary ion mass spectrometry (SIMS). Spreading resistance profiles were also measured to compare with the SIMS profiles. The results show that implantation‐induced damage in the surface region is responsible for the enhanced boron diffusion. Channeled boron in the tail of the implantation profile becomes activated during annealing and has little effect on the tail redistribution during annealing.
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66.30.J- Diffusion of impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
66.30.Lw Diffusion of other defects
61.80.Jh Ion radiation effects

Investigation of GaAs/AlxGa1−xAs and InyGa1−yAs/GaAs superlattices on Si substrates

U. K. Reddy, G. Ji, D. Huang, G. Munns, and H. Morkoç

Appl. Phys. Lett. 50, 1748 (1987); http://dx.doi.org/10.1063/1.98250 (3 pages) | Cited 7 times

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We have studied the optical properties of lattice‐matched GaAs/AlxGa1−xAs and InyGa1−yAs/GaAs strained‐layer superlattices grown on Si substrates using the photoreflectance technique. These preliminary results show that good quality III‐V epilayers can be grown on Si. The experimental data were compared with calculations based on the envelope‐function approximation and fitted to the third‐derivative functional form of reflectance modulation theory.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Photon‐induced recovery of photoquenched EL2 intracenter absorption in GaAs

David W. Fischer

Appl. Phys. Lett. 50, 1751 (1987); http://dx.doi.org/10.1063/1.97736 (3 pages) | Cited 42 times

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After the EL2 absorption band at 1.2 eV is fully photoquenched [i.e., EL2 defect completely transferred from the normal (EL20) to metastable (EL2∗) state] it can be partially recovered by photon excitation. This EL2∗→EL20 recovery exhibits peaks at 0.80 and 0.90 eV with shoulders at 0.86 and 0.94 eV. Comparison is made to the previously published photon‐induced photoconductivity recovery and the results are used to construct a modified configuration coordinate model for the EL2 defect.
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71.55.Eq III-V semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.30.Fs III-V and II-VI semiconductors
72.40.+w Photoconduction and photovoltaic effects

High‐speed integrated heterojunction field‐effect transistor photodetector: A gated photodetector

G. W. Taylor and J. G. Simmons

Appl. Phys. Lett. 50, 1754 (1987); http://dx.doi.org/10.1063/1.97737 (3 pages) | Cited 7 times

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A new concept for a high‐speed photodetector is described which promises very low noise with avalanche gain. The detector is constructed as an integrated circuit element in the heterojunction field‐effect transistor technology and utilizes a unique n‐n heterojunction interface formed by either metalorganic chemical vapor deposition or molecular beam epitaxy growth techniques. The degree of avalanching is controlled via an electrical third terminal.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.Tv Field effect devices

Low‐frequency excess noise in Nb‐Al2O3‐Nb Josephson tunnel junctions

Bonaventura Savo, Frederick C. Wellstood, and John Clarke

Appl. Phys. Lett. 50, 1757 (1987); http://dx.doi.org/10.1063/1.97738 (3 pages) | Cited 39 times

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A fabrication technique for Nb‐Al2O3‐Nb Josephson tunnel junctions is described that is an alternative to the trilayer method generally used. At 4.2 K the magnitude of the low‐frequency noise in the critical current I0 of four junctions with areas A ranging from 7.8 to 115 μm2 was characterized by S1/2I0A1/2/I0 =(14±6)pA μm/μA Hz1/2, where SI0 is the spectral density of the excess noise at 1 Hz. The noise power spectrum of one 3×3 μm2 junction exhibited a Lorentzian feature associated with the emptying and filling of a single trap in the barrier. The low level of noise makes these junctions attractive for use in superconducting quantum interference devices.
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85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects
73.50.Td Noise processes and phenomena
73.40.Rw Metal-insulator-metal structures

Motion of small gold clusters in the electron microscope

Peter Williams

Appl. Phys. Lett. 50, 1760 (1987); http://dx.doi.org/10.1063/1.97739 (3 pages) | Cited 40 times

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The rapid motion of small (∼1000 atom) gold clusters observed with atomic resolution in the electron microscope is argued to be the result of brief melting events, triggered by the Auger decay of an M‐shell vacancy created in a gold atom within the cluster. Each molten episode lasts ∼10 ps, too short for noticeable evaporation. The observed frequency of motion events is shown to be consistent with ionization cross sections for the gold M shell and the electron current densities employed. It is argued from the lack of observable evaporation that the steady‐state temperature of the clusters is ≤1100 K, well below the melting point. The model correctly predicts the cessation of motion at a particle diameter ∼8 nm, when a single Auger decay can no longer melt the cluster.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
FREE

Comment on ‘‘X‐ray photoemission core level determination of the GaSb/AlSb heterojunction valence‐band discontinuity’’[Appl. Phys. Lett. 49, 1037 (1986)]

L. Ley

Appl. Phys. Lett. 50, 1763 (1987); http://dx.doi.org/10.1063/1.97740 (1 page) | Cited 2 times

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Abstract Unavailable
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.65.-b Surface treatments
73.30.+y Surface double layers, Schottky barriers, and work functions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
FREE

Response to ‘‘Comment on ‘X‐ray photoemission core level determination of the GaSb/AlSb heterojunction valence‐band discontinuity’ ’’[Appl. Phys. Lett. 50, 1763 (1987)]

G. J. Gualtieri, G. P. Schwartz, R. G. Nuzzo, and W. A. Sunder

Appl. Phys. Lett. 50, 1763 (1987); http://dx.doi.org/10.1063/1.97741 (2 pages) | Cited 1 time

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Abstract Unavailable
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.30.+y Surface double layers, Schottky barriers, and work functions
81.65.-b Surface treatments
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
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