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22 Jun 1987

Volume 50, Issue 25, pp. 1773-1846

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Ultralow‐threshold graded‐index separate‐confinement single quantum well buried heterostructure (Al,Ga)As lasers with high reflectivity coatings

Pamela L. Derry, Amnon Yariv, Kam Y. Lau, Nadav Bar‐Chaim, Kevin Lee, and Jan Rosenberg

Appl. Phys. Lett. 50, 1773 (1987); http://dx.doi.org/10.1063/1.97742 (3 pages) | Cited 37 times

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Unlike conventional semiconductor lasers, single quantum well lasers with high reflectively coatings have dramatically reduced threshold currents as a result of the smaller volume of the (active) quantum well region. A cw threshold current of 0.95 mA was obtained for a buried graded‐index separate‐confinement heterostructure single quantum well laser with facet reflectivities of ∼70%, a cavity length of 250 μm, and an active region stripe width of 1 μm.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

InGaAsP/InP quantum well modulators grown by gas source molecular beam epitaxy

H. Temkin, D. Gershoni, and M. B. Panish

Appl. Phys. Lett. 50, 1776 (1987); http://dx.doi.org/10.1063/1.97743 (3 pages) | Cited 28 times

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The quantum confined Stark effect has been studied in InGaAsP/InP rib waveguide structures grown by gas source molecular beam epitaxy. Using 100‐Å‐wide wells of InGaAs, a room‐temperature exciton shift of about 250 Å has been observed for a bias voltage of 6 V. At a wavelength of 1.64 μm a modulation depth of 35% has been achieved at a frequency of 500 MHz. We show that efficient modulation at shorter wavelength cannot be obtained in structures with thinner ternary wells. Instead, we propose and demonstrate InGaAsP modulators operating at a wavelength as short as 1.3 μm.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.60.Fc Modulation, tuning, and mode locking

Effect of optical pulse duration on the XeCl laser ablation of polymers and biological tissue

R. S. Taylor, D. L. Singleton, and G. Paraskevopoulos

Appl. Phys. Lett. 50, 1779 (1987); http://dx.doi.org/10.1063/1.97744 (3 pages) | Cited 38 times

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Photoacoustic spectroscopy was used to measure the pulse duration dependence of the XeCl laser ablation of polyimide, polyethylene terephthalate, and post‐mortem human aorta. It was observed that the ablation threshold exhibited only a weak dependence on pulse duration. Photoablation etch depth measurements of polyimide as a function of XeCl laser fluence indicated that over a practical etch depth range of 0.1 to 1 μm per laser pulse the etch depth was independent of the pulse duration.
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79.20.Ds Laser-beam impact phenomena
87.50.S- Radiofrequency/microwave fields effects
87.50.W- Optical/infrared radiation effects
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Picosecond carrier recombination dynamics of semiconductor‐doped glasses

S. C. Hsu and H. S. Kwok

Appl. Phys. Lett. 50, 1782 (1987); http://dx.doi.org/10.1063/1.97745 (3 pages) | Cited 18 times

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See Also: Erratum

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The carrier recombination dynamics of CdSxSe1−x‐doped color glasses under strong pumping conditions were studied with 20 ps dye laser pulses and a white light continuum. The initial blue shift of the absorption spectrum was followed by a fast coherent transient and a slower decay. The results yield an electron‐hole recombination time of ∼400 ps. An interesting wavelength dependence of the decay curves was also noted.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.20.-e Optical properties of bulk materials and thin films
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Soft x‐ray emission from subpicosecond laser‐produced plasmas

D. Kühlke, U. Herpers, and D. von der Linde

Appl. Phys. Lett. 50, 1785 (1987); http://dx.doi.org/10.1063/1.97696 (3 pages) | Cited 75 times

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Observation of soft x rays from a tungsten plasma produced by intense subpicosecond laser pulses is reported. X radiation of several keV photon energy was observed with just a few millijoules of laser energy. Using two consecutive pulses for the generation of the plasma the x‐ray emission is maximal for a delay of about 30 to 50 ps between the laser pulses.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
32.30.Rj X-ray spectra

cw surface‐emitting grating‐coupled GaAs/AlGaAs distributed feedback laser with very narrow beam divergence

Kazumasa Mitsunaga, Masaaki Kameya, Keisuke Kojima, Susumu Noda, Kazuo Kyuma, Koichi Hamanaka, and Takashi Nakayama

Appl. Phys. Lett. 50, 1788 (1987); http://dx.doi.org/10.1063/1.97697 (3 pages) | Cited 10 times

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Room‐temperature cw operation of a GaAs/AlGaAs surface‐emitting grating‐coupled distributed feedback laser is reported. By using a transverse junction stripe scheme which provides a window structure for the surface‐emitted light, cw surface emission having a very narrow beam divergence angle of 0.13° and an output power of more than 3 mW was observed.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Proposal for three‐dimensional internal field mapping by cw electro‐optic probing

Y. H. Lo, M. C. Wu, Z. H. Zhu, S. Y. Wang, and S. Wang

Appl. Phys. Lett. 50, 1791 (1987); http://dx.doi.org/10.1063/1.97698 (3 pages) | Cited 3 times

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The cw electro‐optic probing technique is for the first time proposed to detect the three‐dimensional internal field distribution in linear electro‐optic material like GaAs. By changing the incident angles and positions of the probing beam, sufficient information of the electric field distribution is included in the phase retardation of the probing beam. If certain conditions on the probing beam are satisfied, a very simple linear relation between phase retardation and each field component can be found and the whole problem becomes not only mathematically solvable but experimentally feasible. Finally, a three‐dimensional computer simulation is undertaken to illustrate the relation between field distribution and detected electro‐optic signal.
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78.20.Jq Electro-optical effects
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
42.86.+b Optical workshop techniques
42.87.-d Optical testing techniques

Amplification of high bandwidth signals through two‐wave mixing in photorefractive Bi12SiO20 crystals

G. Hamel de Montchenault, B. Loiseaux, and J. P. Huignard

Appl. Phys. Lett. 50, 1794 (1987); http://dx.doi.org/10.1063/1.97699 (3 pages) | Cited 12 times

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We report a new nearly degenerate two‐wave mixing interaction in photorefractive Bi12SiO20 crystals in which the signal beam is time modulated at high frequency. The beam coupling phenomena and the time integration properties of the crystal allow us to achieve a differential gain γdiff on the transmitted signal beam. The dependence of γdiff versus the duty cycle of the modulated signal is analyzed. Amplification and regeneration of periodic, or random sequences of information bits are experimentally demonstrated.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Jq Electro-optical effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Comparison of microwave and lower frequency discharges for plasma polymerization

R. Claude, M. Moisan, M. R. Wertheimer, and Z. Zakrzewski

Appl. Phys. Lett. 50, 1797 (1987); http://dx.doi.org/10.1063/1.97700 (3 pages) | Cited 17 times

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A plasma sustained by electromagnetic surface waves (SW’s) has been used to study the deposition rate R of hydrocarbon and fluorocarbon plasma polymer films as a function of the applied field frequency f in the range 12–400 MHz. The SW technique allows one to vary only f while keeping constant all other parameters known to influence R, for example, power density P in the plasma. A plot of R/P at a total pressure of 200 mTorr (27 Pa) displays two plateaus, that at f<30 MHz being about five times lower than that at f>100 MHz. This is attributed to the fact that electron energy distribution functions differ fundamentally at radio and microwave frequencies, for the gas pressure range considered.
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52.80.Pi High-frequency and RF discharges
52.75.-d Plasma devices
81.15.Jj Ion and electron beam-assisted deposition; ion plating
82.35.-x Polymers: properties; reactions; polymerization

Piezoelectricity of c‐axis oriented PbTiO3 thin films

Keiko Kushida and Hiroshi Takeuchi

Appl. Phys. Lett. 50, 1800 (1987); http://dx.doi.org/10.1063/1.97701 (2 pages) | Cited 41 times

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Through seeded lateral overgrowth, c‐axis oriented PbTiO3 films are formed on patterned Pt electrode films that are on a SrTiO3 single crystal. The impedance characteristics are then measured for this sample as if it were a composite bulk wave resonator. A series of resonance and antiresonance characteristics is observed. Using a conventional circuit model, the electrical impedance is analyzed to evaluate the electromechanical coupling constant kt of the PbTiO3 films. It is found that kt is as large as 0.8.
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77.65.-j Piezoelectricity and electromechanical effects
73.50.Dn Low-field transport and mobility; piezoresistance
77.55.-g Dielectric thin films
73.61.Ng Insulators

Nitridation of iron by pulsed excimer laser treatment under liquid ammonia: Mössbauer spectroscopic study

S. B. Ogale, P. P. Patil, S. Roorda, and F. W. Saris

Appl. Phys. Lett. 50, 1802 (1987); http://dx.doi.org/10.1063/1.97702 (3 pages) | Cited 5 times

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Iron is nitrided by pulsed excimer laser treatment under liquid ammonia. Conversion electron Mössbauer spectroscopy and small‐angle x‐ray diffraction measurements reveal formation of γ‐austenite in the as‐treated sample and its transformation to γ′‐Fe4N upon thermal annealing.
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81.05.Bx Metals, semimetals, and alloys
64.70.D- Solid-liquid transitions
64.60.My Metastable phases
76.80.+y Mössbauer effect; other γ-ray spectroscopy

Low pressure metalorganic vapor phase epitaxy of InP using a trimethylindium‐trimethylphosphine adduct source

M. K. Lee, D. S. Wuu, and H. H. Tung

Appl. Phys. Lett. 50, 1805 (1987); http://dx.doi.org/10.1063/1.97703 (3 pages) | Cited 8 times

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Metalorganic vapor phase epitaxy of InP prepared by a trimethylindium‐trimethylphosphine (TMIn‐TMP) adduct and PH3 was first grown in a low pressure vertical reactor. The adduct with its irreplaceable merit of high stability has been successfully used in this study. The lowest carrier concentration of undoped InP epilayers is 5×1014 cm−3 with a 77 K mobility of 75 000 cm2/V s. The full width at half‐maximum of the 77 K photoluminescence spectrum was as narrow as 10 meV. These results can compete with all previous data from adduct sources. The growth rate was not limited by the relatively low vapor pressure of the TMIn‐TMP adduct and could reach to 8 μm/h. It suggests the high growth efficiency of this growing process.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.55.Cr III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Electrical measurements on n+‐GaAs/undoped AlAs/n‐GaAs and n+‐GaAs/undoped AlAs:GaAs superlattice/n‐GaAs capacitors

P. B. Kirby and T. M. Kerr

Appl. Phys. Lett. 50, 1808 (1987); http://dx.doi.org/10.1063/1.97704 (3 pages) | Cited 2 times

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We report current versus voltage measurements as a function of temperature (I‐V‐T) and capacitance‐voltage (C‐V) measurements on n+‐GaAs/insulator/n‐GaAs capacitors where the insulators used are (i) AlAs and (ii) a GaAs:AlAs superlattice. For the n+‐GaAs/AlAs/n‐GaAs structures activation energies of 0.38 eV are observed over the temperature range 100–300 K indicating that conduction takes place by thermionic emission through the X‐band states of AlAs. For the superlattice case a measured activation energy of ∼0.33 eV for thermionic emission has a contribution of ∼0.2 eV resulting from the band bending in the superlattice, as revealed by our C‐V measurements. We discuss the implications of these results for transport in superlattices and as a technique for determining miniband energies.
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73.40.Ty Semiconductor-insulator-semiconductor structures
73.61.-r Electrical properties of specific thin films
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
79.40.+z Thermionic emission

Resonant Raman effect in thin‐layered AlAs‐GaAs superlattices

Naoki Kobayashi, Takeshi Toriyama, and Yoshiji Horikoshi

Appl. Phys. Lett. 50, 1811 (1987); http://dx.doi.org/10.1063/1.97705 (3 pages) | Cited 7 times

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A new Raman line was found on ultrahigh AlAs‐GaAs superlattices with an excitation energy near the band gap. The excitation profile revealed that the intensity of the new line was enhanced resonantly as well as those of the AlAs‐ and GaAs‐like phonon lines as the excitation photon energy approached the photoluminescence peak energy. Polarization measurements showed that the enhanced lines were induced by the Fröhlich mechanism. The normal coordinate treatment of the lattice vibration indicates that these lines can probably be attributed to the longitudinal optical phonons of the E species.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
63.20.K- Phonon interactions
78.55.Cr III-V semiconductors
78.30.Fs III-V and II-VI semiconductors

Multiple quantum well 10 μm GaAs/AlxGa1−xAs infrared detector with improved responsivity

K.‐K. Choi, B. F. Levine, C. G. Bethea, J. Walker, and R. J. Malik

Appl. Phys. Lett. 50, 1814 (1987); http://dx.doi.org/10.1063/1.97706 (3 pages) | Cited 32 times

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We have achieved a high responsivity, R=1.9 A/W, 10 μm infrared detector using intersubband absorption in GaAs/AlxGa1−xAs quantum well superlattices. The photocurrent is produced by intersubband absorption followed by efficient photoexcited tunneling. This responsivity is nearly four times higher than our previous results and has been obtained by using thicker and higher AlxGa1−xAs superlattice barriers thereby reducing the dark current and allowing the detector to be operated at higher biases.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.50.Pz Photoconduction and photovoltaic effects
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Intermixing of AlxGa1−xAs/GaAs superlattices by pulsed laser irradiation

J. Ralston, A. L. Moretti, R. K. Jain, and F. A. Chambers

Appl. Phys. Lett. 50, 1817 (1987); http://dx.doi.org/10.1063/1.97707 (3 pages) | Cited 43 times

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Intermixing of AlxGa1−xAs/GaAs superlattices is demonstrated utilizing laser pulses of a few nanosecond duration. Raman spectroscopy and sputter Auger profiling have been used to assess the degree of intermixing and residual damage in the laser irradiated samples. The results indicate that irradiating with the spatially uniform beam of the excimer laser generates a completely intermixed alloy with no detected residual damage. A thermal melting model is used to qualitatively describe the results.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Fx Diffusion; interface formation
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Quantum confinement and strain effects in ZnSe‐ZnSxSe1−x strained‐layer superlattices

K. Mohammed, D. J. Olego, P. Newbury, D. A. Cammack, R. Dalby, and H. Cornelissen

Appl. Phys. Lett. 50, 1820 (1987); http://dx.doi.org/10.1063/1.97708 (3 pages) | Cited 17 times

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A photoluminescence study of ZnSe‐ZnSxSe1−x strained‐layer superlattices with x=0.19 grown by molecular beam epitaxy is presented. We observe clear shifts of the excitons to higher energies as the well widths are reduced. These shifts are interpreted in terms of quantum confinement effects using the envelope function approach and the strain‐induced effects using the deformation potential theory. From our analysis we conclude that most of the band offsets between ZnSe‐ZnSxSe1−x are taken up by the valence bands.
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78.55.Et II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Kinetics of silicon‐induced mixing of AlAs‐GaAs superlattices

P. Mei, H. W. Yoon, T. Venkatesan, S. A. Schwarz, and J. P. Harbison

Appl. Phys. Lett. 50, 1823 (1987); http://dx.doi.org/10.1063/1.97709 (3 pages) | Cited 94 times

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The intermixing of AlAs‐GaAs superlattices has been investigated as a function of Si concentration following anneals in the range of 500 to 900 °C. The superlattice samples were grown by molecular beam epitaxy and the near surface layers were doped with silicon at concentrations of 2×1017 to 5×1018 cm−3. Si and Al depth profiles were measured with secondary ion mass spectrometry (SIMS). The diffusion length and activation energy of Al as a function of silicon dopant concentration were derived from the SIMS data. In the temperature range studied a single activation energy for the Al diffusion of ∼4 eV was observed, and the Al diffusion coefficients increased rapidly with Si concentration.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Fx Diffusion; interface formation
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

GaAs structures with electron mobility of 5×106 cm2/V s

J. H. English, A. C. Gossard, H. L. Störmer, and K. W. Baldwin

Appl. Phys. Lett. 50, 1826 (1987); http://dx.doi.org/10.1063/1.97710 (3 pages) | Cited 90 times

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Modulation‐doped GaAs heterostructures with low‐temperature electron mobilities of 5.0×106 cm2/V s at a two‐dimensional electron areal density of 1.6×1011 cm−2 have been made. The mobilities are the highest ever observed in a semiconductor. Multiple quantum wells of GaAs prepared by similar methods showed electron mobilities up to 0.54×106 cm2/V s at an areal density of 5.3×1011 cm−2 per layer, which also exceeds any mobility value previously reported for multiple well structures. The structures were grown by molecular beam epitaxy with an atomic‐plane sheet‐doping technique.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ey III-V semiconductors

Pressure dependence of electron transport in InP

D. Patel, J. R. Sites, and I. L. Spain

Appl. Phys. Lett. 50, 1829 (1987); http://dx.doi.org/10.1063/1.97711 (3 pages) | Cited 3 times

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Photoconductivity and Hall measurements in InP are presented for pressures up to 4 GPa using a diamond anvil cell. The application of pressure increases the direct energy band gap (E0), as seen by the shift of the photoconductivity edge to lower wavelength with increasing pressure. Hall measurements show a decrease in the electron mobility (μe) with pressure, due mainly to an increasing effective mass (m@B|e). Analysis of the pressure dependence of μe shows that polar optical scattering is the dominant mechanism.
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72.20.My Galvanomagnetic and other magnetotransport effects
72.40.+w Photoconduction and photovoltaic effects
81.40.Rs Electrical and magnetic properties related to treatment conditions
72.20.Fr Low-field transport and mobility; piezoresistance

Si donor neutralization in high‐purity GaAs

N. Pan, B. Lee, S. S. Bose, M. H. Kim, J. S. Hughes, G. E. Stillman, Ken‐ichi Arai, and Y. Nashimoto

Appl. Phys. Lett. 50, 1832 (1987); http://dx.doi.org/10.1063/1.97712 (3 pages) | Cited 27 times

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The effects of hydrogen plasma exposure on the concentration of donors in high‐purity lightly Si‐doped molecular beam epitaxial GaAs have been investigated by photothermal ionization spectroscopy, low‐temperature photoluminescence, capacitance‐voltage, and Hall‐effect measurements. Photothermal ionization measurements show that in addition to Si donors S and Ge donors are present in the original high‐purity samples. After hydrogenation, the Si donor concentration is significantly reduced with a corresponding increase in mobility. Low‐temperature photoluminescence also showed a decrease in the full width at half‐maximum of the neutral donor bound exciton line indicating that the total impurity concentration is reduced. These results provide spectroscopic evidence to support the neutralization of Si donors confirming earlier results of the effects of hydrogen plasma exposure in GaAs.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.55.Cr III-V semiconductors
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Highly stable indium alloyed TbFe amorphous films for magneto‐optic memory

Tetsuo Iijima

Appl. Phys. Lett. 50, 1835 (1987); http://dx.doi.org/10.1063/1.98249 (3 pages) | Cited 5 times

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Indium alloyed TbFe amorphous films for use as a magneto‐optic memory are proposed and studied. These TbFeIn films show strong resistance to corrosion and oxidation. Indium is effective in suppressing oxygen diffusion into the films. An oxygen diffusion coefficient of 5×10−25 m2/s is calculated for TbFeIn films incubated at room temperature. Activation energy is 1.3 eV. This value is over 1.5 times larger than that of TbFe films, where the value is obtained with ellipsometry measurements by R. Allen and G. A. N. Connell [J. Appl. Phys. 53, 2353 (1982)].
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81.05.Bx Metals, semimetals, and alloys
85.70.Sq Magnetooptical devices
66.30.J- Diffusion of impurities
68.55.Nq Composition and phase identification

On the relative importance of physical and chemical sputtering during ion‐enhanced etching of silicon by XeF2

F. A. Houle

Appl. Phys. Lett. 50, 1838 (1987); http://dx.doi.org/10.1063/1.97713 (3 pages) | Cited 7 times

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See Also: Erratum

Show Abstract
Product translational energy distributions have been used in previous studies as a diagnostic of surface reaction enhancement mechanisms under ion bombardment. Haring and co‐workers [R. A. Haring, A. Haring, F. W. Saris, and A. E. de Vries, Appl. Phys. Lett. 41, 174 (1982)] have taken an E−2 dependence for SiFx species desorbing during ion‐enhanced etching of silicon as evidence for the importance of physical sputtering. In this work, the translational energy distribution of SiF4 desorbing from the surface of silicon during spontaneous etching by XeF2 has been obtained from modulated beam measurements. The distribution deviates markedly from a thermal distribution at the surface temperature and exhibits an E−2 dependence at high energy. Observation of this energy dependence both with and without ions suggests that translational energy distributions may not provide a unique signature for chemical and physical sputtering.
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81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Molybdenum‐silicon multilayer monochromator for the extreme ultraviolet

Troy W. Barbee, Piero Pianetta, Renato Redaelli, Roman Tatchyn, and Troy W. Barbee

Appl. Phys. Lett. 50, 1841 (1987); http://dx.doi.org/10.1063/1.97714 (3 pages) | Cited 10 times

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A two‐element molybdenum‐silicon multilayer monochromator has been tested in the energy range 60–110 eV on a differentially pumped bending magnet beamline having a high‐energy cutoff of 3.5 keV at the Stanford Synchrotron Radiation Laboratory. The multilayer structures were sputter deposited onto 5‐cm‐diam (111) single‐crystal silicon and contained 20 molybdenum layers (4.93 nm thick) separated by amorphous silicon layers (7.8 nm thick). A 1200 l/mm gold transmission grating was used to independently measure the wavelength passed by the monochromator. The Al L2,3 absorption edge jump was also measured using the monochromator. These experimental results are compared to model calculations for both the synchrotron source‐monochromator and the synchrotron source‐monochromator‐Al filter configurations and excellent agreement is shown.
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42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Ls Scanners, image intensifiers, and image converters

Lanthanum hexaboride (LaB6) resistivity measurement

M. D. Williams, L. T. Jackson, D. O. Kippenhan, K. N. Leung, M. K. West, and C. K. Crawford

Appl. Phys. Lett. 50, 1844 (1987); http://dx.doi.org/10.1063/1.97715 (2 pages) | Cited 2 times

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In the development of high‐power free‐electron lasers, intense electron beams are required. Large area, directly heated lanthanum hexaboride cathodes have been proposed as the electron emitter. To aid in the design of the cathode, the resistivity of lanthanum hexaboride as a function of material density and temperature has been measured.
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72.80.Ga Transition-metal compounds
79.40.+z Thermionic emission
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