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22 Jun 1987

Volume 50, Issue 25, pp. 1773-1846

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Erratum: Epitaxial alignment of arsenic‐implanted polycrystalline silicon films on 〈100〉 silicon obtained by rapid thermal annealing [Appl. Phys. Lett. 50, 751 (1987)]

J. L. Hoyt, E. Crabbé, J. F. Gibbons, and R. F. W. Pease

Appl. Phys. Lett. 50, 1846 (1987); http://dx.doi.org/10.1063/1.98271 (1 page)

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Abstract Unavailable
Show PACS
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
66.30.J- Diffusion of impurities
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
99.10.Cd Errata
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