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19 Jan 1987

Volume 50, Issue 3, pp. 119-168


Inherent memory effect in a SrS:Ce,K blue‐emitting electroluminescent thin‐film device

Shosaku Tanaka, Hideki Yoshiyama, Yoshiro Mikami, Junichi Nishiura, Shozo Ohshio, Hiroshi Deguchi, and Hiroshi Kobayashi

Appl. Phys. Lett. 50, 119 (1987); http://dx.doi.org/10.1063/1.97689 (2 pages) | Cited 9 times

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The luminance‐applied voltage hysteresis characteristic, so‐called memory effect, has been found in the SrS:Ce,K blue‐emitting electroluminescent thin‐film device. The hysteresis voltage width is about 38 V with 1 kHz pulse drive. The origin of the memory effect is attributable to native defects of the SrS phosphors.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
73.61.Ga II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Short pulse amplification in the presence of absorption

M. M. Tilleman and J. H. Jacob

Appl. Phys. Lett. 50, 121 (1987); http://dx.doi.org/10.1063/1.97690 (3 pages) | Cited 11 times

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Energy amplification of short pulses in the presence of distributed absorption is analyzed and discussed. A short pulse is defined as a pulse length that is much shorter than the lasing state lifetime. It is shown that the energy density of a short pulse cannot be amplified indefinitely in the presence of nonsaturable absorption. In an active medium having a small signal gain g0 and a nonsaturable absorption α, the maximum attainable energy density is (Esat g0/α), where Esat is the medium saturation energy. High‐energy densities are obtained at the expense of the extraction efficiency. An amplifier design can be optimized by choosing the appropriate parameters such as small signal gain and active medium gain length.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Femtosecond carrier dynamics in GaAs

W. Z. Lin, L. G. Fujimoto, E. P. Ippen, and R. A. Logan

Appl. Phys. Lett. 50, 124 (1987); http://dx.doi.org/10.1063/1.97691 (3 pages) | Cited 67 times

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Femtosecond carrier dynamics in GaAs and Al0.3Ga0.7As are investigated using pump probe measurements of transient absorption saturation. Pulses of 35 fs duration are used both to excite carriers and to investigate their subsequent scattering out of their initial optically excited states. A two‐component ultrafast relaxation is observed. In GaAs the initial rapid relaxation occurs on a time scale of 10–35 fs. Measurements performed in Al0.3Ga0.7As indicate that this initial process slows significantly to 130–170 fs for increasing band gap.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Rheological behavior of a suspension of randomly oriented rods

A. L. Graham, L. A. Mondy, M. Gottlieb, and R. L. Powell

Appl. Phys. Lett. 50, 127 (1987); http://dx.doi.org/10.1063/1.98244 (3 pages) | Cited 8 times

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Falling‐ball rheometry is used to study a suspension (volume fraction solids=0.05) of large, neutrally buoyant rods (length=3.175 cm, diameter=0.154 cm) in a viscous Newtonian liquid. We find that all sizes of balls studied (0.65 cm ≤ diameter ≤1.90 cm) experience the same continuum that is characterized by a single viscosity which we have measured to be 2.41 times greater than that of the pure suspending liquid. The viscosity increase due to the presence of the rods is over 12 times greater than that observed for a suspension of uniform spheres having the same volume fraction. The results are free of any flow induced clustering and orientation effects and are in reasonable agreement with theoretical predictions for randomly oriented rods.
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62.10.+s Mechanical properties of liquids
66.20.-d Viscosity of liquids; diffusive momentum transport

Effect of Si on the reaction kinetics of Ti/AlSi bilayer structures

R. K. Nahar and N. M. Devashrayee

Appl. Phys. Lett. 50, 130 (1987); http://dx.doi.org/10.1063/1.97692 (2 pages) | Cited 5 times

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The effect of Si on the reaction between Al and Al‐2% Si films with the transition metal Ti in bilayer structures is studied by the resistivity measurements on samples isothermally annealed in the temperature range of 400–450 °C. The change in the resistivity of the structures is correlated to the rate of formation of an intermetallic compound TiAl3 due to the interaction between Ti and Al. It is found that the reaction rate of the intermetallic compound formation is reduced by a factor of 3 for Ti/AlSi compared with the Ti/Al bilayer structures. The growth mechanism in both the cases is indicated to be diffusion limited. The activation energy for the Ti/AlSi increases to 2.2 eV from 1.7 eV for the Ti/Al structure.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.40.-c Electronic transport in interface structures
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Comparison of diamondlike coatings deposited with C+ and various hydrocarbon ion beams

A. Anttila, J. Koskinen, R. Lappalainen, J‐P. Hirvonen, D. Stone, and C. Paszkiet

Appl. Phys. Lett. 50, 132 (1987); http://dx.doi.org/10.1063/1.97693 (3 pages) | Cited 39 times

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The mechanical properties of the diamondlike coatings deposited with mass‐separated C+, CH+3, CH+4, and C2H+2 ion beams have been compared. The hardness, abrasive wear resistance, and adhesion of the coatings prepared with the C+ ion beam were superior to those of the coatings prepared with other ions. The most serious drawback of the films prepared with hydrocarbon beams was their brittleness and weak adhesion.
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68.60.Bs Mechanical and acoustical properties
68.35.Gy Mechanical properties; surface strains

Statistical equilibrium in particle channeling

B. A. Davidson, L. C. Feldman, J. Bevk, and J. P. Mannaerts

Appl. Phys. Lett. 50, 135 (1987); http://dx.doi.org/10.1063/1.97694 (3 pages) | Cited 4 times

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We have used a unique sample configuration consisting of thin, epitaxial films of Ge sandwiched within a Si(100) lattice to explore the conditions for statistical equilibrium in particle channeling. Indications of nonequilibrium came about from a strong asymmetry in the off‐normal angular scans. We find the depth necessary to achieve statistical equilibrium to be ∼2200 Å for 1.8 MeV He particle channeling along the Si〈110〉 direction. This measurement provides a useful guide for the interpretation of channeling experiments in a variety of near‐surface applications.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Pulsed laser oxidation and nitridation of metal surfaces immersed in liquid media

S. B. Ogale, A. Polman, F. O. P. Quentin, S. Roorda, and F. W. Saris

Appl. Phys. Lett. 50, 138 (1987); http://dx.doi.org/10.1063/1.98248 (3 pages) | Cited 23 times

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Nitridation and oxidation of titanium and iron immersed in liquid N2, NH3, or H2O are achieved by pulsed excimer laser treatment. Rutherford backscattering spectrometry reveals that significant quantities of nitrogen and oxygen can be incorporated in the metal matrices over a depth scale of several thousand angstroms. X‐ray diffraction gives evidence for compound formation and scanning electron microscopy for large stress in the surface layer. The process is viewed as chemical reactive solute incorporation in the metal surface layer in its laser induced liquid state, followed by compound formation.
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81.05.Bx Metals, semimetals, and alloys
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.35.Dv Composition, segregation; defects and impurities

InGaAsP/InP optical switches using carrier induced refractive index change

K. Ishida, H. Nakamura, H. Matsumura, T. Kadoi, and H. Inoue

Appl. Phys. Lett. 50, 141 (1987); http://dx.doi.org/10.1063/1.97695 (2 pages) | Cited 33 times

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InGaAsP/InP optical switches have been fabricated which use a carrier induced refractive index change. Switching has been achieved with a power isolation of 20.5 dB in a 1‐mm‐long device in multimode operation. This is a promising new step toward making optical integrated circuits.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.82.-m Integrated optics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.20.Jq Electro-optical effects

Growth of semi‐insulating GaAs crystals with low carbon concentration using pyrolytic boron nitride coated graphite

Tomoki Inada, Takashi Fujii, Toshio Kikuta, and Tsuguo Fukuda

Appl. Phys. Lett. 50, 143 (1987); http://dx.doi.org/10.1063/1.97642 (3 pages) | Cited 6 times

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It has been determined that the incorporation of carbon into GaAs crystals grown by the liquid encapsulated Czochralski method occurs as the result of a reaction between the GaAs melt and gaseous oxides of carbon, rather than carbon particles. The incorporation occurs during growth as well as during synthesis. The incorporation of carbon was particularly large when a commercially available large puller was used because of the greater number of carbon components in the hot zone which act as sources. Crystals with a low carbon concentration of 1×1015 cm−3 have been successfully grown by employing pyrolytic boron nitride coated graphite components in the large puller.
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81.10.Fq Growth from melts; zone melting and refining
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Electrical activation of arsenic ion‐implanted polycrystalline silicon by rapid thermal annealing

C. Y. Wong, Y. Komem, and H. B. Harrison

Appl. Phys. Lett. 50, 146 (1987); http://dx.doi.org/10.1063/1.97643 (3 pages) | Cited 3 times

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Doped polycrystalline silicon films have often been used as a diffusion source in the formation of shallow junctions. Conventional furnace annealing of these films with high electrical activation usually results in junctions too deep for submicron devices. In this letter, we report on the results of rapid thermal annealing in the temperature range from 1000 to 1150 °C of arsenic ion‐implanted polycrystalline silicon, characterized by secondary ion mass spectroscopy, Rutherford backscattering and channeling, transmission electron microscopy, and four‐point probe measurements. We demonstrate that with rapid thermal annealing at 1150 °C for 5 s, we can achieve simultaneously a sheet resistance of 20 Ω/☒ in the polycrystalline silicon and a diffusion profile of 50 nm into the single‐crystal silicon substrate.
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73.25.+i Surface conductivity and carrier phenomena
68.35.Fx Diffusion; interface formation
81.40.Rs Electrical and magnetic properties related to treatment conditions

Picosecond transient reflectivity of unpinned gallium arsenide (100) surfaces

S. M. Beck and J. E. Wessel

Appl. Phys. Lett. 50, 149 (1987); http://dx.doi.org/10.1063/1.97644 (3 pages) | Cited 16 times

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Surface recombination was measured for photowashed and unwashed GaAs using picosecond transient photoreflectance methods. The results for the washed surfaces clearly demonstrate slow surface recombination that is accurately described by an ambipolar diffusion model. The fast decay observed for unwashed samples implies rapid surface recombination involving a more complex mechanism.
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73.25.+i Surface conductivity and carrier phenomena
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
81.40.Tv Optical and dielectric properties related to treatment conditions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

High resolution transmission electron microscopy of silicon‐on‐insulator formed by high dose oxygen implantation

Peng‐Heng Chang and Bor‐Yen Mao

Appl. Phys. Lett. 50, 152 (1987); http://dx.doi.org/10.1063/1.97645 (3 pages) | Cited 15 times

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The structure of silicon‐on‐insulator formed by oxygen implantation at 150 keV with a dose of 1.6×1018 cm−2 is studied by high resolution transmission electron microscopy. Polyhedral oxygen precipitates are observed both in the top Si layer and in the substrate after 1150 °C annealing. The oxygen precipitates in the top Si layer coarsen at 1250 °C, but no precipitate can be found in the substrate at this temperature. A layer of polycrystalline silicon (polysilicon) exists near the top Si/buried oxide interface. Silicon crystals in the polysilicon layer also coarsen when the annealing temperature is changed from 1150 to 1250 °C. At 1150 °C, the buried oxide/substrate interface has many Si lamellas roughly parallel to the {100} wafer surface. The lamellar structure is broken up after 1250 °C annealing and is replaced by islandlike crystals which are strongly faceted on {100} planes. Defects are present in Si microcrystallites in both the polysilicon layer and the islandlike particles.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Dv Composition, segregation; defects and impurities
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Exact analytical solution to diffusion equation for ion‐implanted dopant profile evolution during annealing

D. S. Moroi and P. M. Hemenger

Appl. Phys. Lett. 50, 155 (1987); http://dx.doi.org/10.1063/1.97646 (3 pages) | Cited 1 time

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Exact solution in analytical form to the dopant diffusion equation for an arbitrary initial implanted profile is obtained with a judicious choice of variables. The diffusivity can be an arbitrary function of the dopant concentration and the temperature of a sample, provided only that their gradients at the front surface of an ion‐implanted semi‐infinite semiconductor wafer are zero. As an example, we derive a closed‐form expression for the annealed concentration profile for the special case in which the diffusivity is a product of a certain power of the concentration and an arbitrary function of the temperature, the initial dopant concentration profile is a truncated Gaussian, and the temperature dependent part of the diffusivity is initially a Gaussian. The present calculation is a generalization of the data fitting analysis of ion‐implanted dopant profile evolution during annealing by R. Ghez, A. S. Oehrlein, T. O. Sedgwick, F. F. Morehead, and Y. H. Lee [Appl. Phys. Lett. 45, 881 (1984)].
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66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

CdS induced homojunction formation in crystalline p‐CuInSe2

R. J. Matson, R. Noufi, K. J. Bachmann, and D. Cahen

Appl. Phys. Lett. 50, 158 (1987); http://dx.doi.org/10.1063/1.97647 (3 pages) | Cited 17 times

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The deposition of CdS onto single‐crystal p‐CuInSe2 (at a substrate temperature of 200 °C) results in a CuInSe2 homojunction rather than the expected heterojunction. Junction depths, varying from 1 to 9 μm, correlated well with the free‐carrier concentration of the sample crystals. The junction depths were measured by electron‐beam‐induced current line scans of cleaved junctions and were corroborated by quantum efficiency measurements. All the materials deposited to date (CdS, Cd, Au, and Mo) have resulted in type conversion of the CuInSe2. The experimental evidence for this type conversion is presented and possible defect chemical origins identified.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
66.30.Lw Diffusion of other defects
68.35.Fx Diffusion; interface formation

Bias‐dependent photoresponse of p+in GaAs/AlAs/GaAs diodes

M. R. Melloch, C. P. McMahon, M. S. Lundstrom, J. A. Cooper, Q‐D. Qian, and S. Bandyopadhyay

Appl. Phys. Lett. 50, 161 (1987); http://dx.doi.org/10.1063/1.97648 (3 pages) | Cited 2 times

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We report photocollection efficiency measurements of p+in GaAs/AlAs/GaAs diodes fabricated on films grown by molecular beam epitaxy. Both the zero‐bias and bias‐dependent photocollection characteristics can be explained by assuming that the band discontinuity between AlAs and GaAs is mostly accommodated in the valence band.
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85.60.Dw Photodiodes; phototransistors; photoresistors
73.50.Pz Photoconduction and photovoltaic effects
73.40.Ty Semiconductor-insulator-semiconductor structures
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Order‐disorder transformation in ternary tetrahedral semiconductors

Alex Zunger

Appl. Phys. Lett. 50, 164 (1987); http://dx.doi.org/10.1063/1.97649 (3 pages) | Cited 35 times

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The recently discovered order‐disorder transformations in pseudobinary semiconductor alloys AxB1−xC are shown to belong to a broader class of such transformations in AnB4−nC4 semiconducting compounds (e.g., chalcopyrites, for n=2). Strain energy, set up by the atomic size mismatch between the A–C and B–C bonds, is shown to control the nature of the state of order in chalcopyrites and pseudobinary alloys alike. These considerations lead to a classification of all bulk tetrahedral semiconductors into four classes of order‐disorder characteristics.
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61.50.Ks Crystallographic aspects of phase transformations; pressure effects
61.66.Dk Alloys
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder

Study of dynamic current distribution in logic circuits by Joule displacement microscopy

Y. Martin and H. K. Wickramasinghe

Appl. Phys. Lett. 50, 167 (1987); http://dx.doi.org/10.1063/1.97650 (2 pages) | Cited 8 times

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Joule displacement microscopy, where the periodic expansion caused by Joule heating in a thin‐film track carrying ac current is mapped using a focused probe, has recently been described. In this letter, we demonstrate the application of this technique to the study of current distribution within a bipolar inverting gate.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.60.Ly Interferometers
85.40.Bh Computer-aided design of microcircuits; layout and modeling
05.70.Ce Thermodynamic functions and equations of state
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