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26 Jan 1987

Volume 50, Issue 4, pp. 171-223


Improved surface nitridation of SiO2 thin films in low ammonia pressures

A. Ronda, A. Glachant, C. Plossu, and B. Balland

Appl. Phys. Lett. 50, 171 (1987); http://dx.doi.org/10.1063/1.97651 (3 pages) | Cited 5 times

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Surface nitridation of thin SiO2 films (130 Å) has been achieved in low ammonia pressures (P≤10−1 mbar) by thermal activation (900 °C≤T≤1050 °C) or by electron‐beam‐enhanced reaction at room temperature. In the first case, the nitridation rate increases with P, T, and time t; in the latter, it depends on P, t, electron energy and flux, and reaches a maximum within the energy range (1–∼1.7 keV). Electrical characterization of metal‐insulator‐semiconductor structures shows that the SiO2/Si interfacial quality is not damaged as long as interfacial nitrogen concentration remains negligible. However, bulk and/or interfacial fixed positive charges are detected in the SiO2 films nitrided at room temperature.
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81.05.Kf Glasses (including metallic glasses)
81.65.-b Surface treatments
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.35.Dv Composition, segregation; defects and impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Growth of single‐crystalline CoSi2 on (111) Si in solid phase epitaxy regime by a nonultrahigh vacuum method

H. C. Cheng, I. C. Wu, and L. J. Chen

Appl. Phys. Lett. 50, 174 (1987); http://dx.doi.org/10.1063/1.97652 (3 pages) | Cited 10 times

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Single‐crystal CoSi2 films have been grown in solid phase epitaxy regime under nonultrahigh vacuum conditions on (111) Si by electron gun deposition of Co thin films followed by rapid thermal annealing in Ar ambient. The single‐crystal films were analyzed by transmission electron microscopy to share the (111) Si surface normal but are rotated 180° about that axis with respect to the substrate. The effect of gas ambient was found to be of critical importance in the growth of single‐crystal CoSi2 on (111) Si. The present nonultrahigh vacuum treatments to grow single‐crystal films on silicon shall greatly facilitate the fabrication of novel classes of high‐speed and high‐frequency devices employing buried silicide layers.
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81.15.Np Solid phase epitaxy; growth from solid phases
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.65.-b Surface treatments
85.30.De Semiconductor-device characterization, design, and modeling

TiC, Ti, and C as a mixing barrier for Ni‐Si ion beam mixing

M. Nastasi, J‐P. Hirvonen, M. Caro, E. Rimini, and J. W. Mayer

Appl. Phys. Lett. 50, 177 (1987); http://dx.doi.org/10.1063/1.97653 (3 pages) | Cited 5 times

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The effect of thin titanium carbide layer on the ion beam mixing of Ni and Si was studied. No mixing was observed following the ion beam bombardment at 600 keV to the fluence of 8×1015 Xe++/cm2. Furthermore, it was also found that Ti and C layers alone could prevent an ion beam mixing between Ni and Si, although in the Ti case mixing did occur between Ti and Ni. These results were compared to a thermodynamic model of ion mixing and found to be in qualitative agreement but relative quantitative agreement was poor.
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66.30.J- Diffusion of impurities
61.80.Jh Ion radiation effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Hydrogenation of boron acceptor in silicon during electron injection by Fowler–Nordheim tunneling

Calvin Yi‐Ping Chao, Marie Shiang‐Chyong Luo, Samuel Cheng‐Sheng Pan, and Chih‐Tang Sah

Appl. Phys. Lett. 50, 180 (1987); http://dx.doi.org/10.1063/1.97654 (2 pages) | Cited 3 times

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Hydrogenation of the boron acceptor in silicon is observed during Fowler–Nordheim tunneling injection of electrons for the first time. Experiment is also presented which shows that the existence of free holes at the silicon surface is not important for boron hydrogenation.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
79.20.Kz Other electron-impact emission phenomena
85.30.Tv Field effect devices
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

E0+Δ0 transitions in GaSb/AlSb quantum wells

A. Forchel, U. Cebulla, G. Tränkle, U. Ziem, H. Kroemer, S. Subbanna, and G. Griffiths

Appl. Phys. Lett. 50, 182 (1987); http://dx.doi.org/10.1063/1.97655 (3 pages) | Cited 2 times

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We have observed optical transitions between the first subbands of the conduction band and the split‐off valence band in GaSb/AlSb quantum well structures. The well width dependence of the emission energies is traced to quantization in the conduction band and in the split‐off band. By comparison with data for the band‐edge transitions the effective Δ0 gaps is the quantum wells are determined. Contrary to previous calculations the Δ0 gap energies are almost independent of the well width.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Instability mechanism in hydrogenated amorphous silicon thin‐film transistors

R. E. I. Schropp and J. F. Verwey

Appl. Phys. Lett. 50, 185 (1987); http://dx.doi.org/10.1063/1.97656 (3 pages) | Cited 20 times

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The degradation of hydrogenated amorphous silicon under an applied field is studied in an amorphous silicon thin‐film transistor. A possible mechanism for metastable defect creation due to trapping of electrons at weak bonds together with a bond‐switching event is investigated. The energy for the bond‐switching process is assumed to be supplied thermally. The rate equation is set up and it is shown that this new model for defect creation is capable of describing the experimentally observed slow field‐effect current transients at various temperatures.
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85.30.Tv Field effect devices
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Simultaneous depth profiling of constituents and impurities by elastic proton scattering in amorphous hydrogenated silicon films

R. Schwarz, J. S. Kolodzey, S. Wagner, and R. T. Kouzes

Appl. Phys. Lett. 50, 188 (1987); http://dx.doi.org/10.1063/1.97657 (3 pages)

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Depth profiles of various constituents and impurities of thin films were obtained simultaneously by a nuclear coincidence method. The energy spectrum of elastically scattered 12 MeV protons, measured by a high‐resolution magnetic spectrometer, was used for constituent identification and total content determination. Constituents of interest were selected by software pulse height discrimination and their depth profiles were obtained from the recoil energy spectrum, measured by a surface barrier detector telescope. Thin films of Teflon, of carbon, and of amorphous hydrogenated silicon were measured. The best possible depth resolution is about 20 nm for carbon and is limited by the beam energy spread and the energy resolution of the solid state detectors.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
82.80.-d Chemical analysis and related physical methods of analysis
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Role of boron in electrical properties of semi‐insulating GaAs grown by the liquid encapsulated Czochralski method

Jiro Osaka, Fumiaki Hyuga, Takashi Kobayashi, Yutaka Yamada, and Fumio Orito

Appl. Phys. Lett. 50, 191 (1987); http://dx.doi.org/10.1063/1.97658 (3 pages) | Cited 14 times

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The effects of the predominant residual impurity boron on the electrical properties of In‐doped, dislocation‐free, semi‐insulating GaAs crystals are investigated. Crystals are grown from various arsenic‐rich melts using the vertical magnetic field applied, fully encapsulated Czochralski technique. It is found that carrier and neutral EL2 concentrations in as‐grown crystal and sheet carrier concentration in the Si‐implanted active layer decrease as the boron concentration increases. The effect of boron decreases as the melt composition becomes more arsenic rich. The results suggest that boron decreases the Ga vacancy concentration.
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72.80.Ey III-V and II-VI semiconductors
73.25.+i Surface conductivity and carrier phenomena
71.55.Eq III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Growth kinetics of molecular beam epitaxially grown GaAs/Al0.3Ga0.7As (100) normal and inverted interfaces in thin single quantum well structures examined via photoluminescence studies

F. Voillot, A. Madhukar, W. C. Tang, M. Thomsen, J. Y. Kim, and P. Chen

Appl. Phys. Lett. 50, 194 (1987); http://dx.doi.org/10.1063/1.97659 (3 pages) | Cited 12 times

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The role of the relative surface kinetics of Ga and Al in determining the nature of normal and inverted interfaces defining GaAs/Al0.3Ga0.7As thin single quantum well (SQW) structures is examined via photoluminescence and excitation spectra studies on SQW structures grown under conditions determined by reflection high‐energy electron diffraction intensity dynamics to shed specific light on this issue. Results are found to be in conformity with the role of surface kinetics exemplified by computer simulations of growth and underscore the critical importance of controlling both the structural and chemical nature of interfaces via choice of optimized growth conditions.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
78.55.Cr III-V semiconductors
68.35.Fx Diffusion; interface formation
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Low‐temperature chemical vapor deposition of SiO2 at 2–10 Torr

B. R. Bennett, J. P. Lorenzo, and K. Vaccaro

Appl. Phys. Lett. 50, 197 (1987); http://dx.doi.org/10.1063/1.97660 (3 pages) | Cited 6 times

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We discuss a new low‐pressure and low‐temperature process for the chemical vapor deposition (CVD) of silicon dioxide. The process differs from conventional low‐pressure CVD in that lower temperatures (150–300 °C) and a unique pressure window (2–10 Torr) provide the conditions for the reaction of silane (SiH4) and oxygen. In this thermal process, activation energies of 0.15–0.18 eV and deposition rates of 100 Å/min at 250 °C are achieved. This technique is approximately 15 times less sensitive to the O2:SiH4 ratio than atmospheric pressure CVD. The deposition conditions are compatible with both low‐temperature silicon and III‐V technologies. Preliminary current‐voltage and capacitance‐voltage measurements on Si indicate dielectric field strength of 3–8×106 V/cm and fixed oxide charge density (Qss) less than 1011 cm−2.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.55.-g Dielectric thin films
73.61.Ng Insulators

Nucleation and characterization of pseudomorphic ZnSe grown on molecular beam epitaxially grown GaAs epilayers

R. L. Gunshor, L. A. Kolodziejski, M. R. Melloch, M. Vaziri, C. Choi, and N. Otsuka

Appl. Phys. Lett. 50, 200 (1987); http://dx.doi.org/10.1063/1.98247 (3 pages) | Cited 56 times

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The heteroepitaxial growth of ZnSe on GaAs epilayers grown by molecular beam epitaxy is found to occur via a two‐dimensional growth mechanism. Alternatively, nucleation on a GaAs substrate exhibits three‐dimensional growth characteristics. The differentiation of the type of nucleation is evidenced by reflection high‐energy electron diffraction intensity oscillations, as well as the dynamic behavior of the diffraction patterns. Photoluminescence measurements of pseudomorphic ZnSe epilayers grown on GaAs epilayers provide a direct measurement of ZnSe deformation potentials.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Et II-VI semiconductors

Interface structures in beta‐silicon carbide thin films

Steven R. Nutt, David J. Smith, H. J. Kim, and Robert F. Davis

Appl. Phys. Lett. 50, 203 (1987); http://dx.doi.org/10.1063/1.97661 (3 pages) | Cited 42 times

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Interface structures in monocrystalline beta‐silicon carbide thin films grown on (001) silicon substrates have been studied by high‐resolution electron microscopy of cross‐sectional specimens. Despite a large lattice mismatch, there is a periodic registry of {111} atom planes across the SiC‐Si interface. Planar defects on SiC {111} planes are grown‐in and arise primarily from lattice and thermal expansion mismatch. Thermal oxidation in wet atmospheres results in preferential attack of the SiC film at sites where planar defects intersect the film surface, whereas oxidation in dry atmospheres does not.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.-b Surface treatments
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Dv Composition, segregation; defects and impurities

Plasma‐enhanced metalorganic chemical vapor deposition of GaAs

A. D. Huelsman, R. Reif, and C. G. Fonstad

Appl. Phys. Lett. 50, 206 (1987); http://dx.doi.org/10.1063/1.97662 (3 pages) | Cited 15 times

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High quality specular epilayers of GaAs were grown using a plasma enhanced metalorganic chemical vapor deposition process. The GaAs epilayers were grown from trimethyl gallium and arsine at very low pressures (2–3 Torr) using an rf discharge to dissociate arsine. Specular single‐crystal layers of unintentionally doped n‐type GaAs were deposited on semi‐insulating GaAs substrates both with and without plasma enhancement. The reactor design allowed the group V sources (in this case arsine) to be dissociated by a plasma localized to an area above the substrate. Films deposited with and without an rf plasma had good mobility and photoluminescence, but as the temperature was lowered films deposited with the plasma were better than those deposited without the plasma.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.55.Cr III-V semiconductors
73.61.Ey III-V semiconductors

Shallow n+ diffusion into InP by an open‐tube diffusion technique

Sorab K. Ghandhi and Krishna K. Parat

Appl. Phys. Lett. 50, 209 (1987); http://dx.doi.org/10.1063/1.97663 (3 pages) | Cited 1 time

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Very shallow n+ layers have been obtained in InP by using gallium sulfide as a source for sulfur diffusion, and chemically vapor deposited SiO2 as a cap. Diffusions were carried out from 585 to 725 °C in an open‐tube system with a nitrogen ambient. The doping profile of sulfur in InP is estimated to be of the complementary error function type with a surface concentration of 5.6×1018/cc and a diffusion constant of 1.1×10−14 cm2/s at 670 °C. Diodes made on n+‐p junctions obtained by this diffusion technique show ideality factors close to unity and saturation current densities as low as 3.4×10−15 A/cm2, signifying the presence of a defect‐free junction. These diffusions, with junction depths in the 400–700 Å range, are ideal for solar cell applications.
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66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation
85.30.Kk Junction diodes
84.60.Jt Photoelectric conversion

Tunneling in In0.53Ga0.47As‐InP double‐barrier structures

T. H. H. Vuong, D. C. Tsui, and W. T. Tsang

Appl. Phys. Lett. 50, 212 (1987); http://dx.doi.org/10.1063/1.97664 (3 pages) | Cited 13 times

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We report the first observation of tunneling through In0.53Ga0.47As‐InP double‐barrier structures at 77 and 4.2 K. The tunneling peaks occur at voltages close to the predicted values of the subband levels of the quantum well. The observed values are symmetrical about zero bias, unlike the results for similar structures in the AlGaAs‐GaAs system. The measured peak‐to‐valley ratios are low, being near to unity. This result is attributed to the presence of a large leakage current caused by conduction at the edges of the devices. We also report the observation of minima in the conductance curves due to the resonance levels in the continuum of states above the quantum well.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling

New method of light‐induced deposition of metal films on insulator‐on‐semiconductor substrates

S. K. Krawczyk and S. N. Kumar

Appl. Phys. Lett. 50, 215 (1987); http://dx.doi.org/10.1063/1.97665 (3 pages)

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We show in this work that the internal photoemission at the semiconductor‐insulator interface in the semiconductor‐insulator‐electrolyte system can be used to initiate localized chemical reactions at the insulator‐electrolyte interface. Using this concept, successful depositions of Cu and Ni films have been obtained on oxidized Si wafers. We have also found that the activation of the SiO2 surface with Pd atoms results in an efficient electron transfer at the SiO2‐electrolyte interface and improves the adhesion of the deposited metal.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
73.40.Mr Semiconductor-electrolyte contacts
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
82.45.-h Electrochemistry and electrophoresis

Use of tertiarybutylarsine for GaAs growth

C. H. Chen, C. A. Larsen, and G. B. Stringfellow

Appl. Phys. Lett. 50, 218 (1987); http://dx.doi.org/10.1063/1.97666 (3 pages) | Cited 58 times

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The use of AsH3 in the organometallic vapor phase epitaxial (OMVPE) growth of GaAs and other As containing III/V semiconductors has a number of disadvantages, including toxicity hazard, purity problems associated with storage cylinders, and low pyrolysis rate at the low temperatures often desirable in OMVPE growth. A new organometallic source, tertiarybutylarsine (TBAs), has recently become available. In this letter we report the results of OMVPE growth of GaAs using trimethylgallium (TMGa) and TBAs in a one atmosphere ambient. The major results of the study are (1) the vapor pressure of TBAs is measured to be 96 Torr at 10 °C, (2) the pyrolysis rate of TBAs appears to be greater than that of AsH3 under similar conditions, (3) as a consequence of (2), excellent morphology GaAs layers can be grown at lower values of V/III ratio (approximately unity) using TBAs than using AsH3 (4) no additional carbon incorporation is produced by the use of the organometallic group V source. These factors make TBAs a promising candidate to replace AsH3 in vapor phase epitaxial growth of GaAs.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology

Antiphase boundaries in epitaxially grown β‐SiC

P. Pirouz, C. M. Chorey, and J. A. Powell

Appl. Phys. Lett. 50, 221 (1987); http://dx.doi.org/10.1063/1.97667 (3 pages) | Cited 55 times

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When the surface of β‐SiC, grown epitaxially on (001) silicon by chemical vapor deposition, is chemically etched, boundaries appear which may be observed by optical or scanning electron microscopy. Examination by plan‐view and cross‐sectional transmission electron microscopy shows boundaries in the film which exhibit line or fringe contrast. Convergent beam electron diffraction has been used to show that these boundaries separate domains that are in an antiphase relationship to each other. A model is presented which discusses the formation of these domains from independent nucleation on a stepped substrate surface.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.65.-b Surface treatments
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Rh Phase transitions and critical phenomena
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