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16 Feb 1987

Volume 50, Issue 7, pp. 365-424


Reduction of the field spectrum linewidth of a multiple quantum well laser in a high magnetic field—spectral properties of quantum dot lasers

Kerry Vahala, Yasuhiko Arakawa, and Amnon Yariv

Appl. Phys. Lett. 50, 365 (1987); http://dx.doi.org/10.1063/1.98200 (3 pages) | Cited 5 times

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The field spectrum linewidth of a multiple quantum well laser immersed in a high magnetic field is measured at room temperature and at 165 K. The low‐temperature measurements show a decrease of linewidth with increasing magnetic field. We believe this behavior results from the formation of a totally discrete electronic state space. Measurements of the low‐temperature luminescence spectrum show that the emission is split into two peaks by the high field with the higher energy peak responsible for lasing action.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes

InGaAs/InP multiple quantum well waveguide phase modulator

U. Koren, T. L. Koch, H. Presting, and B. I. Miller

Appl. Phys. Lett. 50, 368 (1987); http://dx.doi.org/10.1063/1.98201 (3 pages) | Cited 21 times

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A double heterostructure ridge waveguide with multiple quantum well InGaAs/InP core and InP cladding layers has been operated as a phase modulator at 1.52 μm wavelength. The observed phase shift coefficient was 12°/V mm. With a 1‐mm‐long device we have achieved a half wavelength shift at 15 V bias and a maximum phase shift of 420° at 35 V. Quantum confined Stark effect has been observed in the shorter 1.49–1.52 μm wavelength region. The ability to obtain λ/2 modulation with a short device and relatively low voltage makes this device very attractive for practical applications.
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42.79.Gn Optical waveguides and couplers

Ultrasensitive coherent Raman technique with picosecond lasers

M. W. Schauer, M. J. Pellin, B. M. Biwer, and D. M. Gruen

Appl. Phys. Lett. 50, 371 (1987); http://dx.doi.org/10.1063/1.98202 (3 pages) | Cited 2 times

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The use of picosecond, Q‐switched lasers and advanced polarization schemes has led to the development of a coherent Raman technique with the sensitivity of coherent anti‐Stokes Raman spectroscopy experiments but without the troublesome phase‐matching requirements. Experiments in dilute solutions of benzene indicate a limit of sensitivity for the current apparatus of 2.5×10−4 M in two minutes of signal averaging over 150 cm−1. Possible applications to the in situ study of passive films and thin films on transparent media are discussed.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
82.80.Dx Analytical methods involving electronic spectroscopy
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

V‐grooved inner‐stripe laser diodes on a p‐type substrate operating over 100 mW at 1.5 μm wavelength

H. Horikawa, S. Oshiba, A. Matoba, and Y. Kawai

Appl. Phys. Lett. 50, 374 (1987); http://dx.doi.org/10.1063/1.98203 (3 pages) | Cited 5 times

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An output power of 110 mW cw has been achieved with a V‐grooved inner‐stripe laser diode on a p‐type substrate emitting at 1.5 μm wavelength. Output powers over 100 mW could be obtained by determining the appropriate cavity length and the reflectivity of the front mirror facet, a parameter that depends heavily on output power. These lasers were fabricated without introducing anti‐meltback layers. The meltback problem of the active layer was overcome using a low‐temperature liquid phase epitaxy technique.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.By Design of specific laser systems

Attainment of submillimeter periods and a 0.3‐T peak field in a novel micropole undulator device

Roman Tatchyn and Paul L. Csonka

Appl. Phys. Lett. 50, 377 (1987); http://dx.doi.org/10.1063/1.98204 (3 pages) | Cited 7 times

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A micropole undulator is defined here as an undulator with a very short (submillimeter) period and correspondingly shorter poles. The availability of micropole undulators is expected to profoundly affect the development of x‐ray sources. For example, with such devices x‐ray beams comparable to those from conventional undulators will be attainable on storage rings of much lower energy (and emittance) than those presently in use. X‐ray instrumentation will also be affected, e.g., micropole undulators of sufficient length can provide extremely monochromatic outputs, obviating the need for expensive and complex ultrahigh vacuum monochromator systems. Here we describe the design and practical construction of a prototype 35 period micropole undulator whose total length is 2.54 cm. The device is of a novel hybrid/electromagnetic bias design. We also present results of field profile measurements along the central plane of the new device.
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07.85.-m X- and γ-ray instruments
41.60.-m Radiation by moving charges
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Oscillation frequency tuning characteristics of fiber‐extended‐cavity distributed‐feedback lasers

K.‐Y. Liou, R. T. Ku, T. M. Shen, and P. J. Anthony

Appl. Phys. Lett. 50, 380 (1987); http://dx.doi.org/10.1063/1.98205 (3 pages) | Cited 2 times

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Stable narrow‐linewidth (<100 kHz) operation has been demonstrated for a fiber‐extended‐cavity distributed‐feedback (EC DFB) laser emitting at 1.55 μm wavelength. We describe the observed oscillation frequency tuning characteristics of the laser obtained by controlling the temperature and injection current. The effects of distributed grating reflection and continuous frequency tuning schemes are examined for both the EC DFB laser and for the case of an EC DBR (distributed Bragg reflector) laser.
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42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.81.Wg Other fiber-optical devices

Acoustic‐jet plating of gold and copper at 7.5 MHz

R. J. von Gutfeld, D. R. Vigliotti, and H. K. Wickramasinghe

Appl. Phys. Lett. 50, 383 (1987); http://dx.doi.org/10.1063/1.98206 (3 pages)

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We describe a new type of jet plating that uses a focused high‐frequency sound field directed through the center of the jet. The acoustic jet results in an improved morphology for gold and copper depositions although plating rates are not enhanced. Four‐point probe measurements of acoustic‐jet plated copper lines show up to a 50% decrease in electrical resistivity compared to jet plated deposits.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.-a Thin film structure and morphology
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
73.61.At Metal and metallic alloys

Low‐temperature film growth of Si by reactive ion beam deposition

Hiroshi Yamada and Yasuhiro Torii

Appl. Phys. Lett. 50, 386 (1987); http://dx.doi.org/10.1063/1.98207 (3 pages) | Cited 15 times

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A new low‐temperature film formation technique is proposed. It uses ionized species produced by an electron cyclotron resonance‐type microwave ion source with reactive gases and controlled in the low ion energy region, less than about 500 eV. Good quality homoepitaxial films on Si(111) are obtained at 600 °C and 100–500 eV ion energy by using SiH4 as a material gas. By increasing the ion energy to 250‐300 eV, homoepitaxial growth at 400 °C can be achieved. Polycrystalline Si films on the same type of substrates can also be obtained at 200 °C.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Jj Ion and electron beam-assisted deposition; ion plating

X‐ray characterization of surface and bulk structures of sputtered iron oxide thin film

T. C. Huang and B. R. York

Appl. Phys. Lett. 50, 389 (1987); http://dx.doi.org/10.1063/1.98208 (3 pages) | Cited 3 times

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The crystalline structures of a sputtered Co‐doped iron oxide thin film have been successfully identified and correlated with magnetic properties. X‐ray diffraction analysis showed that the bulk of the sputtered film has been properly converted to ferromagnetic γ‐Fe2O3. However, the surface of the film was found to be solely hexagonal α‐Fe2O3. The formation of an antiferromagnetic α‐Fe2O3 surface on a ferromagnetic α‐Fe2O3 film caused the magnetically dead layer previously observed by polarized neutron reflection and Kerr rotation measurements.
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68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
75.70.Ak Magnetic properties of monolayers and thin films
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)

Impurity‐induced layer‐disordered buried heterostructure AlxGa1−xAs‐GaAs quantum well edge‐injection laser array

D. G. Deppe, G. S. Jackson, N. Holonyak, D. C. Hall, R. D. Burnham, R. L. Thornton, J. E. Epler, and T. L. Paoli

Appl. Phys. Lett. 50, 392 (1987); http://dx.doi.org/10.1063/1.98209 (3 pages) | Cited 9 times

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A laser array is described that makes use of edge injection into two sides (two ‘‘edges’’) of a stack of three AlxGa1−xAs‐GaAs multiple quantum well active regions. The edge‐injection array is realized by impurity‐induced layer disordering, which forms a higher gap Si‐doped n‐type emitter that edge injects electrons into either side of a stack of three lower gap multiple quantum well p‐type active regions. The far‐field beam divergence in the vertical direction (θ⊥) of the array diode is reduced from 45° to 15° as determined by the laser operation, for comparison, of one of the quantum well active regions (oxide‐defined stripe geometry diode).
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

X‐ray topography of growth striations in Czochralski‐grown Si wafers

Masato Imai, Hiroyuki Noda, Masahiro Shibata, and Yoshifumi Yatsurugi

Appl. Phys. Lett. 50, 395 (1987); http://dx.doi.org/10.1063/1.98210 (3 pages) | Cited 3 times

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Growth striations in Czochralski‐grown Si wafers have been observed by a scanning x‐ray double‐crystal method. We confirmed that the striations on the topographs relate to the variation of oxygen concentration.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
64.75.-g Phase equilibria
81.10.Fq Growth from melts; zone melting and refining
68.35.Dv Composition, segregation; defects and impurities

Nonlinear optical absorption in bulk GaInAs/InP at room temperature

A. M. Fox, A. C. Maciel, J. F. Ryan, and M. D. Scott

Appl. Phys. Lett. 50, 398 (1987); http://dx.doi.org/10.1063/1.98211 (3 pages) | Cited 9 times

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We report cw measurements of band‐gap resonant nonlinear absorption in bulk Ga0.47In0.53As/InP at room temperature. A tunable Co:MgF2 laser was used for these experiments. The nonlinear absorption coefficient α2 is determined by measuring saturation of the optical absorption, and from this the nonlinear refractive index n2 is calculated in the band‐tail region. We find α2≊−6 cm W−1 at 1.67 μm and n2≊−4×10−5 cm2 W−1 at 1.69 μm. Within the band‐tail region the nonlinear optical quality factor ‖n2/α‖ is found to lie between 0.9 and 1.8×10−8 cm3 W−1.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Effects of 450 °C thermal annealing upon oxygen precipitation in heavily B‐ and Sb‐doped Czochralski Si

S. Hahn, M. Arst, Z. U. Rek, V. Stojanoff, D. A. Bulla, W. E. Castro, and W. A. Tiller

Appl. Phys. Lett. 50, 401 (1987); http://dx.doi.org/10.1063/1.98212 (3 pages) | Cited 2 times

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In this study we investigated effects of 450 °C preanneal upon oxygen precipitation during subsequent low (700 °C)‐medium (950 °C) temperature two‐step furnace anneals in heavily B‐ and Sb‐doped Czochralski Si wafers. Our optical microscopy and synchrotron radiation section topographic data have shown that, for heavily B‐doped materials, a 450 °C anneal up to 52 h is found to reduce oxygen precipitation in two‐step furnace annealing, whereas for Sb‐doped wafers, oxygen precipitation rates increase monotonically with the increase in 450 °C preanneal time.
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81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging
71.55.Ht Other nonmetals
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
68.35.B- Structure of clean surfaces (and surface reconstruction)

Band discontinuities in GaAs/AlxGa1−xAs heterojunction photodiodes

M. A. Haase, M. A. Emanuel, S. C. Smith, J. J. Coleman, and G. E. Stillman

Appl. Phys. Lett. 50, 404 (1987); http://dx.doi.org/10.1063/1.98213 (3 pages) | Cited 27 times

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We have developed a technique for determining band discontinuities in GaAs/AlxGa1−xAs heterostructures by measuring the spectral response of specially designed p+N− heterojunction photodiodes. The spectral response exhibits internal photoemission with well defined threshold energies from which band offsets are easily deduced. This technique is applicable for GaAs/AlxGa1−xAs heterojunctions for which x≳0.5.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.60.Dw Photodiodes; phototransistors; photoresistors
81.65.-b Surface treatments

Low‐threshold high‐efficiency AlGaAs‐GaAs double‐heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor deposition

R. D. Dupuis, J. P. van der Ziel, R. A. Logan, J. M. Brown, and C. J. Pinzone

Appl. Phys. Lett. 50, 407 (1987); http://dx.doi.org/10.1063/1.98185 (3 pages) | Cited 26 times

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We have fabricated low‐threshold, high‐quantum‐efficiency, room‐temperature AlGaAs‐GaAs double‐heterojunction injection lasers from epitaxial structures grown by metalorganic chemical vapor deposition directly on Si substrates. These devices have broad‐area (125 μm×250 μm) pulsed threshold current densities as low as Jth =3.5 kA/cm2 at ∼23 °C. Ridge‐waveguide stripe‐geometry lasers (5 μm×250 μm) have pulsed threshold currents as low as 130 mA at ∼23 °C. These stripe‐geometry lasers have total external differential quantum efficiencies as high as ηext ∼70%, a value equal to the ηext measured for similar double‐heterostructure lasers grown on GaAs substrates. These are the lowest threshold currents and highest external quantum efficiencies yet reported for lasers grown on Si substrates.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Tunneling transfer field‐effect transistor: A negative transconductance device

B. Vinter and A. Tardella

Appl. Phys. Lett. 50, 410 (1987); http://dx.doi.org/10.1063/1.98186 (3 pages) | Cited 19 times

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A double channel field‐effect structure is proposed in which the resonant tunneling between states in either part of the channel is employed to control the parallel transport in the channel. Realistic calculations of the conductance in this structure show that one can use it to design a negative transconductance device or as a velocity field transistor with much improved mobility modulation.
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85.30.Tv Field effect devices
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Fr Low-field transport and mobility; piezoresistance

Low‐temperature photoluminescence from InGaAs/InP quantum wires and boxes

H. Temkin, G. J. Dolan, M. B. Panish, and S. N. G. Chu

Appl. Phys. Lett. 50, 413 (1987); http://dx.doi.org/10.1063/1.98159 (3 pages) | Cited 181 times

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InGaAs/InP quantum well layers grown by gas source molecular beam epitaxy have been used to fabricate quantum wires and boxes with transverse dimensions as small as ∼300 Å. These artificial structures exhibit intense low‐temperature photoluminescence and show exciton shifts of 8–14 meV expected of low dimensional confinement. Low surface recombination velocity characteristic of InP and its alloys should allow luminescence studies of features as small as ∼30 Å under moderate excitation intensities.
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78.55.Cr III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Rapid annealing and the anomalous diffusion of ion implanted boron into silicon

A. E. Michel, W. Rausch, P. A. Ronsheim, and R. H. Kastl

Appl. Phys. Lett. 50, 416 (1987); http://dx.doi.org/10.1063/1.98160 (3 pages) | Cited 123 times

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The anomalous diffusion of ion implanted boron into silicon is shown to be a transient effect with a decay time that decreases rapidly with increasing anneal temperature. The decay time is approximately 45 min at 800 °C and decreases to the order of a second at 1000 °C. The anomalous displacement in the low concentration region is greater at low temperatures but a larger fraction of the boron is redistributed at high temperature. Sheet resistance measurements agree with the idea that the moving fraction of the boron atoms is electrically active and limited to the intrinsic carrier concentration at the anneal temperature. The activation energy for the decay of the transient is greater than that for the diffusion coefficient, which makes an appropriate rapid thermal anneal cycle an important practical process in the fabrication of shallow p‐n junctions.
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66.30.J- Diffusion of impurities
61.72.uf Ge and Si
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
73.25.+i Surface conductivity and carrier phenomena

Determination of band offsets using the photovoltaic effect: Application to the PbS/PbSe heterostructure

T. K. Chu, D. Agassi, and A. Martinez

Appl. Phys. Lett. 50, 419 (1987); http://dx.doi.org/10.1063/1.98161 (3 pages) | Cited 7 times

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The energy‐band offsets at a semiconductor heterointerface can be determined by measuring the temperature and wavelength dependence of the photovoltaic response. Results for the PbS/PbSe structure show a type I band alignment with a conduction‐band offset ΔEc of ∼48 meV. The method is sensitive to small band offsets and can be applied to the study of other semiconductor systems, especially narrow band‐gap materials.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.40.+w Photoconduction and photovoltaic effects

Enhanced PtSi formation using a gold layer between Pt and Si

Jerng‐Sik Song and Chin‐An Chang

Appl. Phys. Lett. 50, 422 (1987); http://dx.doi.org/10.1063/1.98162 (3 pages) | Cited 5 times

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When gold is deposited on a clean silicon surface, it reacts with silicon readily even at room temperature. After prolonged time, silicon atoms diffuse out through a gold film and accumulate on the top surface. To study the effects of this phenomenon on the silicide formation kinetics, two kinds of samples were prepared on silicon substrates; one with a gold layer between platinum and silicon layers (Pt/Au/a‐Si/Si substrate) and the other without a gold layer (Pt/a‐Si/Si substrate). After annealing, the samples were investigated with Rutherford backscattering spectrometry. It was found that the rate of Pt2Si formation was the same for both kinds of samples. However, in the case of PtSi formation, the samples with a Au layer showed a faster reaction rate than those without a Au layer. These observations are explained by considering the dominant diffusing species during the formation of Pt2Si and PtSi.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.35.Fx Diffusion; interface formation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
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