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23 Feb 1987

Volume 50, Issue 8, pp. 427-479


Optical tristability using a twin‐stripe laser diode

Masanobu Watanabe, Hideo Itoh, Seiji Mukai, and Hiroyoshi Yajima

Appl. Phys. Lett. 50, 427 (1987); http://dx.doi.org/10.1063/1.98163 (3 pages) | Cited 9 times

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Optical tristability is demonstrated with a positive feedback circuit composed of a twin‐stripe laser diode, a p‐i‐n photodiode, and a transistor. A novel nonlinearity in the current/light characteristics of the twin‐stripe laser diode is the key point in realizing the tristability. By changing the circuit parameters, optical bistability and differential gain characteristics can also be performed.
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42.60.By Design of specific laser systems
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.65.Pc Optical bistability, multistability, and switching, including local field effects
85.60.-q Optoelectronic devices

Fast burning of persistent spectral holes in small laser spots using photon‐gated materials

W. E. Moerner, T. P. Carter, and C. Bräuchle

Appl. Phys. Lett. 50, 430 (1987); http://dx.doi.org/10.1063/1.98164 (3 pages) | Cited 13 times

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We report extremely fast (30 ns) burning of detectable persistent spectral holes in 200‐μm‐diam laser spots using a new photon‐gated donor‐acceptor material: a derivative of zinc‐tetrabenzoporphyrin as a donor with chloroform acceptors in a poly(methylmethacrylate) thin film. The fast burning pulse near 630 nm was accompanied by a 200‐ms gating pulse at 488 nm to produce the ≂1% deep spectral holes in transmission. This result illustrates one crucial advantage of photon‐gated materials over single‐photon materials: greatly increased reading fluences can be tolerated, allowing fast burning in small laser spots to be easily detected.
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79.20.Ds Laser-beam impact phenomena
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
42.79.Vb Optical storage systems, optical disks
78.66.Qn Polymers; organic compounds

Surface reaction and recombination of the SiH3 radical on hydrogenated amorphous silicon

Jérôme Perrin and Ton Broekhuizen

Appl. Phys. Lett. 50, 433 (1987); http://dx.doi.org/10.1063/1.98165 (3 pages) | Cited 61 times

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Mercury photosensitized decomposition of SiH4 is used to study surface reactions of SiH3 on hydrogenated amorphous silicon (a‐Si:H). The method involves modeling of gas phase production, reaction and diffusion to the walls of reactive species, in a parallel plate reactor, combined with measurements of surface reflection coefficient of SiH3, spatial density profile of SiH3, and a‐Si:H deposition rate. The reaction probability of SiH3 on a‐Si:H varies from 0.1 up to 0.2 in the 40–350 °C temperature domain. However, a large fraction (≥60%) of adsorbed SiH3 recombine on the surface, instead of being incorporated in the film.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.50.-m Photochemistry
82.50.Hp Processes caused by visible and UV light

Modulation of Renninger scan intensity: A new x‐ray technique to characterize epitaxial structures

B. Greenberg and J. Ladell

Appl. Phys. Lett. 50, 436 (1987); http://dx.doi.org/10.1063/1.98166 (3 pages) | Cited 3 times

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We have demonstrated a new x‐ray diffraction technique to characterize epitaxial structures. It makes use of Renninger scans [Z. Phys. 106, 141–176 (1937)] in which a crystal is rotated about the normal to a set of diffracting planes while diffraction from those planes is measured. To obtain these scans an x‐ray beam passes through, and is modulated by, the epitaxial layer on the way into and/or out from a substrate reflection. The scans show multiple diffraction features from the substrate and new features which are due to the epitaxial layer. These modulations of Renniger scan intensity data, which we call MORSI, yield information about the orientation, lattice dimensions, and structural perfection of the sample in a variety of directions. In addition to the new features, changes are observed in the shape of a given multiple beam interaction from sample to sample. These appear to be due to differences in the perfection of substrate material. In this letter we report a MORSI study of a 1.4‐μm‐thick ZnSe layer grown by molecular beam epitaxy on a (001) oriented GaAs substrate using the GaAs (004) for the Renninger scan.
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61.05.cp X-ray diffraction
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
61.66.Fn Inorganic compounds

Infrared spectroscopic evidence of silicon related hydrogen complexes in hydrogenated n‐type GaAs doped with silicon

A. Jalil, J. Chevallier, J. C. Pesant, R. Mostefaoui, B. Pajot, P. Murawala, and R. Azoulay

Appl. Phys. Lett. 50, 439 (1987); http://dx.doi.org/10.1063/1.98167 (3 pages) | Cited 28 times

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Infrared absorption spectroscopy has been performed on hydrogenated and deuterated n‐type silicon‐doped GaAs. It reveals the presence of a sharp vibrational mode at 890 cm−1 in hydrogenated samples and at 637 cm−1 in deuterated ones. These bands are absent in undoped GaAs. Analysis of the isotopic shift frequency reveals that the band is associated with a hydrogen–arsenic bond where arsenic is supposed to sit as a first nearest neighbor of the silicon donor atom giving rise to (SiAs3)As‐H complexes. Isochronal annealing experiments show the direct correlation between the absorption line intensity and the amount of neutralized donors, confirming the view that the extra electrons of the silicon donors are involved in the hydrogen–arsenic bonds.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
63.20.Pw Localized modes
78.30.Fs III-V and II-VI semiconductors
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Stimulated emission of photoexcited GaAs/AlxGa1−xAs single quantum wells

S. Borenstain, D. Fekete, M. Vofsi, R. Sarfaty, E. Cohen, and Arza Ron

Appl. Phys. Lett. 50, 442 (1987); http://dx.doi.org/10.1063/1.98168 (3 pages) | Cited 8 times

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The optical gain of narrow, single quantum well GaAs/AlxGa1−xAs structures is measured by the variable illuminated stripe length method at low temperatures. Stimulated emission (SE) is observed only from the lowest states of the electron‐hole plasma (EHP) excited in the well and from the cladding layers. In contrast to the case of bulk AlxGa1−xAs, the SE spectrum is independent of either excitation intensity or stripe length. The high e‐h pair density in the quantum well results in higher gain values (per unit excited volume) than those observed in bulk AlxGa1−xAs under similar photoexcitation conditions.
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78.45.+h Stimulated emission
78.55.Cr III-V semiconductors

Thermal stability and barrier height enhancement for refractory metal nitride contacts on GaAs

L. C. Zhang, S. K. Cheung, C. L. Liang, and N. W. Cheung

Appl. Phys. Lett. 50, 445 (1987); http://dx.doi.org/10.1063/1.98169 (3 pages) | Cited 25 times

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Self‐aligned GaAs metal‐semiconductor field‐effect transistor process requires a very thermally stable gate material which must maintain good Schottky contact with GaAs after high‐temperature annealing. The electrical characteristics of rf‐sputtered ZrN, TiN, and NbN contacts on n‐GaAs substrate have been investigated as a function of annealing temperature. We show that all these refractory metal nitride contacts on GaAs have ideality factors very close to unity after annealing at temperatures as high as 850 °C. The barrier height for these contacts increases with annealing temperature and very low reverse leakage current is obtained. We also observe similar behavior from previous work on WN/GaAs contacts. Such barrier height enhancement at elevated temperatures has been attributed to the incorporation of nitrogen into GaAs near the metal/GaAs interface.
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73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Improved activation of Mg+ and As+ dual implants in GaAs by capless rapid thermal annealing

A. N. M. Masum Choudhury and C. A. Armiento

Appl. Phys. Lett. 50, 448 (1987); http://dx.doi.org/10.1063/1.98170 (3 pages) | Cited 19 times

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The activation of high dose Mg+ implants (1×1015 cm−2, 100 keV) in GaAs using capless rapid thermal annealing has been improved by the co‐implantation of As+. This technique reduces the outdiffusion of the implanted Mg, which can adversely affect the activation of shallow, high dose implants. Compared with an activation of 18% for an implant of Mg+ only, the co‐implantation of As+ has increased the activation to as much as 61% with concomitant sheet resistance of 136 Ω/☒. The placement of the As+ implant with respect to the position of the Mg+ profile has been determined to play a role in the activation efficiency. This technique has been applied to the formation of thick p+ regions with high surface carrier concentrations, which has important applications in device fabrication for reduction of contact resistances.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
66.30.J- Diffusion of impurities

Experimental realization of a resonant tunneling transistor

T. K. Woodward, T. C. McGill, and R. D. Burnham

Appl. Phys. Lett. 50, 451 (1987); http://dx.doi.org/10.1063/1.98171 (3 pages) | Cited 15 times

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We report experimental realization of a three‐terminal negative differential resistance (NDR) device. As proposed by A. R. Bonnefoi, T. C. McGill, and R. D. Burnham [IEEE Electron. Dev. Lett. EDL‐6, 636 (1985)], the structure consists of a GaAs‐AlxGa1−xAs double‐barrier tunneling heterostructure, the current through which is controlled by an integrated vertical field‐effect transistor. We present results for two samples grown by metalorganic chemical vapor deposition. Both samples exhibit NDR in their source‐drain current‐voltage characteristics at 77 K, with peak‐to‐valley current ratios ranging between 3 and 5.3. One sample exhibits NDR at room temperature. The position and peak‐to‐valley current ratio of the NDR can be modulated by gate voltage. Due to asymmetry in the doping levels of the two GaAs cladding layers, resonant tunneling peaks occur at much larger voltages in reverse bias than in forward bias.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Low threshold pulsed and continuous laser oscillation from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Si substrates

J. P. van der Ziel, R. D. Dupuis, R. A. Logan, R. M. Mikulyak, C. J. Pinzone, and A. Savage

Appl. Phys. Lett. 50, 454 (1987); http://dx.doi.org/10.1063/1.98266 (3 pages) | Cited 29 times

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Using graded refractive index, single quantum well GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates, we have obtained injection lasers with broad area pulsed thresholds of 3.5 kA/cm2 at 300 K. With the current flow restricted to 5‐μm‐wide stripes, pulsed thresholds of 130 mA and differential quantum efficiencies of 70% were obtained at 300 K. Pulsed oscillation has been obtained up to 375 K and continuous oscillation up to 160 K. The rapid degradation of the lasers suggests the growth of nonradiative regions in the active layer.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Efficient technique for calculating the bound and virtual energy spectrum of semiconductor structures

Carey Schwartz

Appl. Phys. Lett. 50, 457 (1987); http://dx.doi.org/10.1063/1.98172 (3 pages) | Cited 5 times

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A novel technique for determining the energies of bound and resonant states of semiconductor structures is presented. The new method is based upon R‐matrix propagation techniques (known to be numerically stable) and avoids direct integration of the Schrödinger equation. The new method is recursive in nature, numerically stable, and can be applied easily to any one‐dimensional potential. We show that the new technique yields the well‐known analytic results describing the energy spectrum of a single quantum well. Further examples illustrate application of the R‐matrix technique to determine the bound state and resonant energy spectrum of multiple quantum well structures in the presence or absence of an applied bias.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.10.-w Theories and models of many-electron systems

Carrier lifetime versus ion‐implantation dose in silicon on sapphire

F. E. Doany, D. Grischkowsky, and C.‐C. Chi

Appl. Phys. Lett. 50, 460 (1987); http://dx.doi.org/10.1063/1.98173 (3 pages) | Cited 103 times

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We have measured the dependence of the free‐carrier lifetime on O+ ion‐implantation dose in silicon‐on‐sapphire. At low implant doses, the carrier trapping rate increased linearly with the trap density introduced by ion implantation. At doses above 3×1014 cm−2 the measured carrier lifetime reached a limit of 600 fs.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.uf Ge and Si
81.40.Rs Electrical and magnetic properties related to treatment conditions
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Oxygen removal from Si via reaction with adsorbed Ge

J. F. Morar, B. S. Meyerson, U. O. Karlsson, F. J. Himpsel, F. R. McFeely, D. Rieger, A. Taleb‐Ibrahimi, and J. A. Yarmoff

Appl. Phys. Lett. 50, 463 (1987); http://dx.doi.org/10.1063/1.98174 (3 pages) | Cited 20 times

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Silicon surface optimization prior to film growth is central to the fields of chemical vapor deposition and molecular beam epitaxy. We have examined a method for low‐temperature in situ cleaning of the Si (100) surfaces utilizing a submonolayer coverage of germanium. Synchrotron excited x‐ray photoemission data indicate that Ge atoms arriving at a Si (100) surface can break silicon–oxygen bonds, thereby producing new chemical species which sublimate at 625 °C. In the absence of Ge, the observed silicon oxide species were stable at temperatures well in excess of 750 °C. These results are used to investigate the mechanisms by which adsorbed Ge can be used to produce oxide‐free Si (100) surfaces at 625 °C.
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81.65.-b Surface treatments
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Rapid thermal processing to improve the epitaxy of (100) silicon on (1102) sapphire

Loren Pfeiffer, Julia M. Phillips, K. E. Luther, K. W. West, J. L. Batstone, F. A. Stevie, and J. E. A. Maurits

Appl. Phys. Lett. 50, 466 (1987); http://dx.doi.org/10.1063/1.98175 (3 pages) | Cited 7 times

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The heteroepitaxial quality of (100) Si films on (1102) sapphire substrates (SOS) as measured by Rutherford backscattering (RBS) and x‐ray pole figure analysis is improved by a rapid thermal anneal (RTA) after deposition which brings the Si temperature above 1350 °C for at least several seconds. For a 6000‐Å (100) SOS film the (100) aligned to random RBS yield improves from 10% and 54% at the front and back interfaces, to as low as 3.2% and 13% after the RTA. The microtwin volume shows a corresponding decrease to under 1% from the as‐grown value of 2.7%. A model based on isothermal solid phase epitaxial regrowth from the untwinned material near the front surface is proposed to account for these results.
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81.15.Np Solid phase epitaxy; growth from solid phases
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.55.-a Thin film structure and morphology

Glow‐discharge‐implanted, thermally annealed, oxide‐passivated silicon solar cells of 19% efficiency

R. D. Westbrook, R. F. Wood, and G. E. Jellison

Appl. Phys. Lett. 50, 469 (1987); http://dx.doi.org/10.1063/1.98176 (3 pages) | Cited 3 times

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Single‐crystal silicon solar cells with efficiencies as high as 19.3% AM1.5 have been fabricated using simple, glow‐discharge ion implantation followed by conventional furnace annealing during which an oxide layer was grown for surface passivation. Fine‐line (∼5 μm) photolithography was used for metallization to reduce carrier recombination at the metal‐silicon interface and optimized ZnS/MgF2 antireflection coatings were applied. The efficiencies of these cells are the highest reported to date for ion‐implanted cells.
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84.60.Jt Photoelectric conversion
61.72.uf Ge and Si
72.40.+w Photoconduction and photovoltaic effects

Investigation of nanocrystalline iron materials by Mössbauer spectroscopy

U. Herr, J. Jing, R. Birringer, U. Gonser, and H. Gleiter

Appl. Phys. Lett. 50, 472 (1987); http://dx.doi.org/10.1063/1.98177 (3 pages) | Cited 162 times

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Nanocrystalline materials, which have been proposed to represent a new solid state structure, are investigated by Mössbauer spectroscopy. Nanocrystalline materials are polycrystals with a crystal size of typically 1–10 nm. These materials consist of two components of comparable volume fractions: a crystalline component and an interfacial component, formed by the atoms located either in the crystals or in the interfacial regions between them. As the atomic configurations of both components are different, two kinds of Mössbauer spectra are expected. Iron nanocrystalline material is found to exhibit a two‐component Mössbauer spectrum, consisting of a crystalline component and a second one with different Mössbauer parameters. The Mössbauer parameters of the second subspectrum are consistent with the model of the interfacial component of a nanocrystalline material.
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61.72.Mm Grain and twin boundaries
76.80.+y Mössbauer effect; other γ-ray spectroscopy
61.66.Bi Elemental solids
68.35.B- Structure of clean surfaces (and surface reconstruction)

Rapid direct writing of high‐aspect‐ratio trenches in silicon

G. V. Treyz, R. Beach, and R. M. Osgood

Appl. Phys. Lett. 50, 475 (1987); http://dx.doi.org/10.1063/1.98178 (3 pages) | Cited 15 times

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Deep trenches have been etched in crystalline silicon with polarization‐controlled, variable curvature walls. Scan speeds of up to 10 mm/s have been demonstrated. A qualitative understanding of the etching process has been developed which is based on a local, melt‐enhanced etch rate.
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81.65.-b Surface treatments

Ultrasonic study of mechanically alloyed Co40Sn60

A. Hikata, M. J. McKenna, and C. Elbaum

Appl. Phys. Lett. 50, 478 (1987); http://dx.doi.org/10.1063/1.98179 (2 pages) | Cited 6 times

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Ultrasonic velocity changes of mechanically alloyed Co40Sn60 are investigated as a function of temperature at low temperatures. It is found that the velocity increases logarithmically with temperature below ∼1 K, indicating the existence of features characteristic of the glassy state. With the two level tunneling system (TLS) model developed for amorphous materials, factors nM2 and math are determined, where n is the density of states of TLS, M and math are TLS coupling constants for phonons and electrons, respectively.
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81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
81.05.Bx Metals, semimetals, and alloys
61.43.Fs Glasses
61.43.-j Disordered solids
43.35.Zc Use of ultrasonics in nondestructive testing, industrial processes, and industrial products
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