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28 Dec 1987

Volume 51, Issue 26, pp. 2181-2265

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Observation of electroluminescence of ZnS:TbF3 under various gaseous atmospheres

Tsuyoshi Arakawa, Nobuya Suezawa, Gin‐ya Adachi, and Jiro Shiokawa

Appl. Phys. Lett. 51, 2181 (1987); http://dx.doi.org/10.1063/1.98932 (2 pages)

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The intensity of the electroluminescence (EL) of ZnS:TbF3 changed after gas adsorption. The threshold voltage of EL after gas adsorption is correlated to the specific dielectric constant of adsorbates.
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78.60.Fi Electroluminescence

Large third‐order optical nonlinearity of the organic metal α‐[bis(ethylenedithio) tetrathiofulvalene] triiodide

P. G. Huggard, W. Blau, and D. Schweitzer

Appl. Phys. Lett. 51, 2183 (1987); http://dx.doi.org/10.1063/1.98933 (3 pages) | Cited 31 times

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The organic metal α‐[bis(ethylenedithio) tetrathiofulvalene]2I3 shows a large third‐order optical nonlinearity around 650 nm, as observed by forward degenerate four‐wave mixing. Nonlinear susceptibilities of ‖χ(3)‖ ∼5×10−8 esu are observed along the direction of maximum conductivity. The frequency dispersion of the nonlinearity points to a plasma effect due to the conduction electrons.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.-e Optical properties of bulk materials and thin films

Promethium‐doped phosphate glass laser at 933 and 1098 nm

W. F. Krupke, M. D. Shinn, T. A. Kirchoff, C. B. Finch, and L. A. Boatner

Appl. Phys. Lett. 51, 2186 (1987); http://dx.doi.org/10.1063/1.98934 (3 pages) | Cited 3 times

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A promethium (Pm3+) laser has been demonstrated for the first time. Trivalent promethium 147 doped into a lead‐indium‐phosphate glass étalon was used to produce room‐temperature four‐level laser emission at wavelengths of 933 and 1098 nm. Spectroscopic and kinetic measurements have shown that Pm3+ is similar to Nd3+ as a laser active ion.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

One‐step two‐level etching technique for monolithic integrated optics

W. J. Grande, W. D. Braddock, J. R. Shealy, and C. L. Tang

Appl. Phys. Lett. 51, 2189 (1987); http://dx.doi.org/10.1063/1.98935 (3 pages) | Cited 8 times

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We describe a one‐step two‐level etching technique for the batch fabrication of monolithically integrated optical circuits. The ability to fabricate high‐quality laser devices with this process is demonstrated.
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81.65.-b Surface treatments
42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics

Generation of blue cw coherent radiation by sum frequency mixing in KTiOPO4

J.‐C. Baumert, F. M. Schellenberg, W. Lenth, W. P. Risk, and G. C. Bjorklund

Appl. Phys. Lett. 51, 2192 (1987); http://dx.doi.org/10.1063/1.98936 (3 pages) | Cited 22 times

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The wavelength, angle, and temperature tolerances of a new room‐temperature noncritically phase‐matched frequency mixing process involving type II frequency mixing of 1064 and 809 nm radiation in potassium titanyl phosphate (KTiOPO4) are measured. The angular and temperature bandwidths are found to be unusually wide. Device applications for upconversion of diode pumped neodymium:yttrium aluminum garnet laser sources to the blue spectral region are explored.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Fc Modulation, tuning, and mode locking
42.55.Rz Doped-insulator lasers and other solid state lasers

Neutron production from a shell‐confined carbon‐deuterium plasma by 1.06 μm laser irradiation

Hiroyuki Daido, Masanobu Yamanaka, Kunioki Mima, Katsunobu Nishihara, Sadao Nakai, Yoneyoshi Kitagawa, Eisuke Miura, Chiyoe Yamanaka, and Akira Hasegawa

Appl. Phys. Lett. 51, 2195 (1987); http://dx.doi.org/10.1063/1.98937 (2 pages) | Cited 4 times

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We demonstrate for the first time the production of more than 108 neutrons per shot from a carbon‐deuterium plasma confined in a 100‐μm‐thick gold shell without an implosion using six beams from a GEKKO XII glass laser system at a laser wavelength of 1.06 μm. The equivalent neutron of the deuterium‐tritium reaction is estimated to be 1010–1011.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.70.Nc Particle measurements

Activation energy for thermal donor formation in silicon

M. Claybourn and R. C. Newman

Appl. Phys. Lett. 51, 2197 (1987); http://dx.doi.org/10.1063/1.98938 (3 pages) | Cited 35 times

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Czochralski silicon samples have been heated for increasing periods of time at temperatures of 395, 415, 450, 475, and 490 °C. At each stage infrared spectra of the electronic absorption of thermal donors TD2–TD9 were obtained with the samples at 4.2 K. The data for all the thermal donor centers can be presented on one universal plot, provided the concentration and time axes are simply scaled by factors that depend only on the temperature of heating. It is implied that the rate of formation of each center is limited by the same mechanism. An activation energy of 1.7±0.1 eV is determined for these processes.
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61.72.Bb Theories and models of crystal defects
66.30.J- Diffusion of impurities
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
71.55.Ht Other nonmetals

Thermal resistance at interfaces

E. T. Swartz and R. O. Pohl

Appl. Phys. Lett. 51, 2200 (1987); http://dx.doi.org/10.1063/1.98939 (3 pages) | Cited 114 times

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We report measurements of the solid‐solid thermal boundary resistance Rbd, spanning the temperature range from 1 to 300 K. Below 30 K, Rbd is found to be in agreement with the prediction of the acoustic mismatch model. The influence of diffuse scattering at the interface is found to have a very minor influence on Rbd. Above 30 K, Rbd decreases less rapidly with increasing temperature than predicted by the theory. Phonon scattering in thin (∼30 Å) disordered layers near the interface is shown to be a possible explanation. Implications for heat removal from integrated circuits are discussed.
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66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
68.35.Md Surface thermodynamics, surface energies
85.40.Bh Computer-aided design of microcircuits; layout and modeling
63.20.-e Phonons in crystal lattices

Aerosol jet etching of fine patterns

Y. L. Chen, J. R. Brock, and I. Trachtenberg

Appl. Phys. Lett. 51, 2203 (1987); http://dx.doi.org/10.1063/1.98940 (3 pages) | Cited 12 times

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Successful demonstration of a new etching technique, aerosol jet etching (AJE), is reported. AJE has been used to pattern fine lines with good anisotropy in silicon dioxide surfaces on silicon substrates using a hydrofluoric acid ultrafine aerosol jet.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
85.40.Bh Computer-aided design of microcircuits; layout and modeling
68.35.B- Structure of clean surfaces (and surface reconstruction)

Interaction between radiation‐induced defects and the Pt‐related center in silicon

Y. M. Weng, E. Ohta, and M. Sakata

Appl. Phys. Lett. 51, 2206 (1987); http://dx.doi.org/10.1063/1.98941 (2 pages) | Cited 2 times

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The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation‐induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220–140 °C for the A and E centers, respectively. The level Ea (0.23) in the Pt‐doped silicon is the Pt(−/0) level, an acceptor like the A center.
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61.80.Fe Electron and positron radiation effects
61.72.Yx Interaction between different crystal defects; gettering effect
78.30.Er Solid metals and alloys
78.40.Kc Metals, semimetals, and alloys

Plasmon‐phonon‐assisted electron‐hole recombination in silicon at high laser fluence

Mark Rasolt, Andrea Marco Malvezzi, and Heinz Kurz

Appl. Phys. Lett. 51, 2208 (1987); http://dx.doi.org/10.1063/1.98942 (3 pages) | Cited 2 times

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We present both theoretical and experimental results in silicon which clearly demonstrate that at time scales of 20 to 40 ps, after the pump laser pulse and at fluences greater than 100 mJ/cm2, the carrier density of the electron‐hole plasma drops for increasing fluence; this is not explained by Auger recombination. We show that this drop is specific to plasmon‐phonon‐assisted recombination, which naturally explains this behavior.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.35.-y Excitons and related phenomena
71.38.-k Polarons and electron-phonon interactions
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons

HgCdTe photovoltaic detectors on Si substrates

R. Kay, R. Bean, K. Zanio, C. Ito, and D. McIntyre

Appl. Phys. Lett. 51, 2211 (1987); http://dx.doi.org/10.1063/1.98943 (2 pages) | Cited 10 times

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HgCdTe infrared photovoltaic detectors were fabricated on silicon substrates for the first time by using intermediate CdTe and GaAs epitaxial layers. No cracking or degradation was observed after thermal cycling these devices (cutoff wavelength of 5.5 μm and R0A as high as 200 Ω cm2 at 80 K). Secondary ion mass spectrometry and Auger data substantiate that a CdTe buffer layer can prevent Ga diffusion from the intermediate GaAs epitaxial layer from inadvertently converting the p‐HgCdTe to n‐type at growth temperatures as high as 500 °C.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
66.30.J- Diffusion of impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Gas source silicon molecular beam epitaxy using silane

Hiroyuki Hirayama, Toru Tatsumi, Atsushi Ogura, and Naoaki Aizaki

Appl. Phys. Lett. 51, 2213 (1987); http://dx.doi.org/10.1063/1.99009 (3 pages) | Cited 40 times

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The apparatus and its preliminary results of gas source silicon molecular beam epitaxy are reported for the first time. In this study, silane (SiH4) was used as a source gas. A subchamber was designed to control the gas flow precisely. SiH4 exposure during the initial cleaning was effective in lowering the cleaning temperature and saving the cleaning time. Epitaxial silicon films grew uniformly on 4‐in. wafers. There was no spitting defect on the epitaxial films. Moreover, selective epitaxial growth was realized using a patterned SiO2 mask.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Monolayer epitaxy of III‐V compounds by low‐pressure metalorganic chemical vapor deposition

M. Razeghi, Ph. Maurel, F. Omnes, and J. Nagle

Appl. Phys. Lett. 51, 2216 (1987); http://dx.doi.org/10.1063/1.98944 (3 pages) | Cited 7 times

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We report, in this letter, the successful growth of Ga0.5In0.5As/InP heterostructures by alternating the growth of n(GaAs) and n(InAs) atomic layers. Such structures are designed as (GaAs)n(InAs)n. The influence of parameters such as n or the introduction of a purging time between the InAs‐GaAs monolayers has been investigated. Low‐temperature photoluminescence experiments showed that (GaAs)n(InAs)n/InP multiquantum wells had a better uniformity in composition and thickness than the conventional Ga0.5In0.5As/InP system.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.55.Cr III-V semiconductors

High‐power operation of InP/InGaAsP double‐channel planar buried‐heterostructure lasers with asymmetric facet coatings

L. A. Koszi, H. Temkin, G. J. Pryzbylek, B. P. Segner, S. G. Napholtz, C. M. Bogdanowicz, and N. K. Dutta

Appl. Phys. Lett. 51, 2219 (1987); http://dx.doi.org/10.1063/1.98945 (3 pages) | Cited 4 times

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We report the high‐power operation of λ=1.3 μm InGaAsP double‐channel planar buried‐heterostructure lasers with asymmetric mirror coatings. A stack of four dielectric layers is used to raise the reflectivity of one facet to over 80%, and the thickness of a single layer coating on the output facet is chosen to reduce the reflectivity to about 4%. The resulting lasers are characterized by a low threshold current of 25 mA, slope efficiency as high as 50%, and a power output of as much as 150 mW (at 5 °C) at a current of less than 300 mA. The lasers operate in a single transverse mode over the entire current range and as much as 45 mW of power could be coupled into a lensed single‐mode fiber. Preliminary high‐power aging data show excellent device reliability.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.30.De Semiconductor-device characterization, design, and modeling

Extreme selectivity in the lift‐off of epitaxial GaAs films

Eli Yablonovitch, T. Gmitter, J. P. Harbison, and R. Bhat

Appl. Phys. Lett. 51, 2222 (1987); http://dx.doi.org/10.1063/1.98946 (3 pages) | Cited 266 times

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We have discovered conditions for the selective lift‐off of large area epitaxial AlxGa1−xAs films from the substrate wafers on which they were grown. A 500‐Å‐thick AlAs release layer is selectivity etched away, leaving behind a high‐quality epilayer and a reusable GaAs substrate. We have measured a selectivity of ≳107 between the release layer and Al0.4Ga0.6As. This process relies upon the creation of a favorable geometry for the outdiffusion of dissolved H2 gas from the etching zone.
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81.65.-b Surface treatments
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Use of thin AlGaAs and InGaAs stop‐etch layers for reactive ion etch processing of III‐V compound semiconductor devices

C. B. Cooper, S. Salimian, and H. F. MacMillan

Appl. Phys. Lett. 51, 2225 (1987); http://dx.doi.org/10.1063/1.98947 (2 pages) | Cited 21 times

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Reactive ion etching is important for III‐V device fabrication. Commonly encountered applications include the need to remove an epitaxial layer selectively from underlying layers and the need for definition of mesas and other structures with carefully controlled dimensions. We present results showing the use of very thin Al0.9Ga0.1As and In0.2Ga0.8As stop‐etch layers, which when used in conjunction with a particular etch chemistry can provide highly selective removal of epitaxial layers in GaAs‐based III‐V compound semiconductors. In addition, we report the selective removal of an Al0.3Ga0.7As layer from underlying GaAs by the use of a thin In0.2Ga0.8As interlayer.
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81.65.-b Surface treatments
85.30.Tv Field effect devices
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Interface states in Bi/Bi1−xSbx heterojunctions

D. Agassi and T. K. Chu

Appl. Phys. Lett. 51, 2227 (1987); http://dx.doi.org/10.1063/1.98948 (3 pages) | Cited 7 times

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A novel, band‐inverted semiconductor junction is proposed. The heterojunction consists of two column V semimetals that have undergone a semimetal‐semiconductor transition, i.e., a thin Bi film of thickness ∼100 Å and a Bi1−xSbx alloy with 0.06<x<0.3. Such a junction will support the recently predicted interfacial states. Results of calculations on the dispersion relation and optical transitions pertaining to the interfacial states are presented. It is shown that the optical transition rate between an interfacial state and the conduction state is comparable to that of a conduction‐valence band transition. It is also shown that the optical transitions have very interesting polarization dependences.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.20.At Surface states, band structure, electron density of states
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Electrical determination of the valence‐band discontinuity in HgTe‐CdTe heterojunctions

D. H. Chow, J. O. McCaldin, A. R. Bonnefoi, T. C. McGill, I. K. Sou, and J. P. Faurie

Appl. Phys. Lett. 51, 2230 (1987); http://dx.doi.org/10.1063/1.98949 (3 pages) | Cited 10 times

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Current‐voltage behavior is studied experimentally in a Hg0.78Cd0.22Te‐CdTe‐Hg0.78Cd0.22Te heterostructure grown by molecular beam epitaxy. At temperatures above 160 K, energy‐band diagrams suggest that the dominant low‐bias current is thermionic hole emission across the CdTe barrier layer. This interpretation yields a direct determination of 390±75 meV for the HgTe‐CdTe valence‐band discontinuity at 300 K. Similar analyses of current‐voltage data taken at 190–300 K suggest that the valence‐band offset decreases at low temperatures in this heterojunction.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ga II-VI semiconductors
71.55.Gs II-VI semiconductors

Negative photoconductivity in high electron mobility transistors

C. S. Chang, H. R. Fetterman, D. Ni, E. Sovero, B. Mathur, and W. J. Ho

Appl. Phys. Lett. 51, 2233 (1987); http://dx.doi.org/10.1063/1.98950 (3 pages) | Cited 10 times

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High electron mobility transistors are sensitive to light since illumination ionizes deep donor centers and increases the drain current. In this letter the first observation of negative photoconductivity, i.e., drain current decreasing with light, will be reported. The current‐voltage characteristics were enhanced by shining white light onto the devices showing negative photoconductivity.
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85.30.Tv Field effect devices
73.50.Pz Photoconduction and photovoltaic effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Stress variations due to microcracks in GaAs grown on Si

B. G. Yacobi, S. Zemon, P. Norris, C. Jagannath, and P. Sheldon

Appl. Phys. Lett. 51, 2236 (1987); http://dx.doi.org/10.1063/1.98951 (3 pages) | Cited 40 times

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Luminescence studies of thick (≥5 μm) GaAs epitaxial layers grown on Si substrates reveal regions of nonuniform stress associated with the presence of microcracks. Using cathodoluminescence spectroscopy as a tool for microcharacterization, the magnitude of the stress, derived from the peak positions of the luminescence spectra, is shown to increase gradually as a function of distance from the intersection of two microcracks. The greatest degree of stress relief was found at this intersection.
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62.20.M- Structural failure of materials
78.60.Hk Cathodoluminescence, ionoluminescence
68.35.B- Structure of clean surfaces (and surface reconstruction)

Photoelectromagnetic effect in p‐type HgCdTe layers grown by liquid phase epitaxy

D. Mordowicz, A. Zemel, A. Zussman, D. Eger, and Y. Goldstein

Appl. Phys. Lett. 51, 2239 (1987); http://dx.doi.org/10.1063/1.98952 (3 pages) | Cited 6 times

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Photo‐electro‐magnetic effect measurements of p‐type Hg1−xCdxTe layers are made at 80 K as a function of the magnetic field. A negative (anomalous) effect is observed. The basic properties of the minority carriers, mobility, lifetime, surface and interface recombination rates, are determined from best fitting of the experimental data to the theory.
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72.20.My Galvanomagnetic and other magnetotransport effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.25.+i Surface conductivity and carrier phenomena

Formation of buried layers of β‐SiC using ion beam synthesis and incoherent lamp annealing

K. J. Reeson, P. L. F. Hemment, J. Stoemenos, J. Davis, and G. E. Celler

Appl. Phys. Lett. 51, 2242 (1987); http://dx.doi.org/10.1063/1.98953 (3 pages) | Cited 15 times

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It is demonstrated that well‐defined buried layers of β‐SiC can be grown epitaxially within a silicon substrate. This structure is formed by implanting high doses of carbon ions (>3×1017 C+ cm−2) at 200 keV into a (100) single‐crystal silicon which is maintained at a temperature of approximately 550 °C. During the subsequent anneal at 1405 °C for 90 min redistribution of the implanted species occurs, enabling the formation of a buried layer of β‐SiC overlain by high‐quality single‐crystal silicon (χmin=4.1%).
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81.15.Np Solid phase epitaxy; growth from solid phases
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Evidence of the role of defects near the injecting interface in determining SiO2 breakdown

P. Olivo, B. Ricco, Thao N. Nguyen, T. S. Kuan, and S. J. Jeng

Appl. Phys. Lett. 51, 2245 (1987); http://dx.doi.org/10.1063/1.98925 (3 pages) | Cited 5 times

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Experimental results on oxide breakdown in thin insulator metal‐oxide‐semiconductor structures are presented to show that at a microscopic level breakdown is related to defects located near the injecting interface. In addition, breakdown is found to be almost independent of electron fluence.
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73.61.Ng Insulators
68.35.Dv Composition, segregation; defects and impurities
77.22.Jp Dielectric breakdown and space-charge effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Influence of an intentional substrate misorientation on deep electron traps in AlGaAs grown by molecular beam epitaxy

D. C. Radulescu, W. J. Schaff, G. W. Wicks, A. R. Calawa, and L. F. Eastman

Appl. Phys. Lett. 51, 2248 (1987); http://dx.doi.org/10.1063/1.98926 (3 pages) | Cited 6 times

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Deep level transient capacitance spectroscopy has been used to investigate deep level electron traps in thick silicon‐doped AlGaAs grown by molecular beam epitaxy (MBE) on GaAs substrates intentionally misoriented (tilted) a few degrees from a nominally (001) surface. Of the three dominant traps observed in AlGaAs, the concentrations of two of these are observed to be a direct function of the substrate tilt angle and tilt direction. The concentration of the third dominant trap, which is related to the DX center, is independent of substrate misorientation during MBE. These observations will help in identifying which impurities and/or defects are affected by substrate misorientation during MBE growth in addition to identifying the origin of deep levels in AlGaAs.
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71.55.Eq III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
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