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6 Jul 1987

Volume 51, Issue 1, pp. 1-60


Nonlinear optical properties of an azo dye attached polymer

Shiro Matsumoto, Ken‐ichi Kubodera, Takashi Kurihara, and Toshikuni Kaino

Appl. Phys. Lett. 51, 1 (1987); http://dx.doi.org/10.1063/1.98891 (2 pages) | Cited 41 times

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Copolymers of azo dye substituted acrylic monomer and methylmethacrylate are synthesized and their third‐order nonlinear optical susceptibility χ(3) is evaluated using the third harmonic generation Maker fringe method. The χ(3) is 1.26×10−12 esu at 25.9 mol % azo dye monomer content in the copolymer. It is also shown that there is a linear relationship between χ(3) and the monomer content.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.-e Optical properties of bulk materials and thin films
77.22.Ch Permittivity (dielectric function)

Effect of active layer thickness on differential quantum efficiency of 1.3 and 1.55 μm InGaAsP injection lasers

W. H. Cheng, C. B. Su, and D. Renner

Appl. Phys. Lett. 51, 3 (1987); http://dx.doi.org/10.1063/1.98880 (3 pages) | Cited 7 times

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The dependence of differential quantum efficiency (ηd) on active layer thickness (d) for 1.3 and 1.55 μm InGaAsP buried crescent (BC) injection lasers has been measured. A comparison of the results shows that ηd for 1.55 μm lasers increases more rapidly with decreasing d than ηd for 1.3 μm lasers. The significantly different dependence of ηd on d in BC lasers suggests that the optical absorption in the active region of InGaAsP lasers is strongly wavelength dependent. This gives the important practical conclusion that the ηd for 1.55 μm lasers can be significantly improved by reducing d, whereas the ηd for 1.3 μm lasers can only be slightly improved by reducing d. As a result of ηd vs d investigation, we have obtained high performance 1.3 and 1.55 μm BC lasers which exhibit threshold currents as low as 9 mA at 25 °C, high‐temperature operation (up to 100 °C), and ηd over 65% (1.3 μm) and 45% (1.55 μm).
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

1.3 μm electro‐optic silicon switch

J. P. Lorenzo and R. A. Soref

Appl. Phys. Lett. 51, 6 (1987); http://dx.doi.org/10.1063/1.98887 (3 pages) | Cited 45 times

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Silicon‐based optical switches have been fabricated which rely on refractive index change induced by injected minority carriers. Multimode raised‐rib 2×2 structures are fabricated using epitaxial silicon and diffused homojunctions. The first evidence of 1.3 μm optical switching is observed.
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85.60.-q Optoelectronic devices
84.32.Dd Connectors, relays, and switches
78.20.Jq Electro-optical effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Phase and spatial coherence measurements on diode arrays: Comparison to supermode theory

Gregory C. Dente, Kimberley A. Wilson, Theodore C. Salvi, and David Depatie

Appl. Phys. Lett. 51, 9 (1987); http://dx.doi.org/10.1063/1.98894 (3 pages) | Cited 7 times

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We describe a simple method for measuring the output phase and spatial coherence of semiconductor lasers and laser arrays.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes

Fiber‐optic evanescent field absorption sensor

Phillip H. Paul and George Kychakoff

Appl. Phys. Lett. 51, 12 (1987); http://dx.doi.org/10.1063/1.98888 (3 pages) | Cited 60 times

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Waveguide evanescent field absorption has been measured as a function of cladding refractive index and bulk absorption coefficient. A simple theory for interpreting these results has been developed. An all‐fiber species concentration sensor has been constructed and its performance characterized.
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42.81.Dp Propagation, scattering, and losses; solitons
42.81.Pa Sensors, gyros
07.60.Rd Visible and ultraviolet spectrometers

Electrostatic collection of debris resulting from 193 nm laser etching of polyimide

R. J. von Gutfeld and R. Srinivasan

Appl. Phys. Lett. 51, 15 (1987); http://dx.doi.org/10.1063/1.98889 (3 pages) | Cited 19 times

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Ablated debris produced by 193 nm laser irradiation of polyimide can be preferentially collected on charged wire or plate electrodes placed on the polymer surface. Scanning micrographs indicate several types of debris structure depending on laser fluence and applied potential. The fragment morphology and possible charging mechanisms are discussed. The collected debris is believed to consist of pure carbon.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
79.20.Ds Laser-beam impact phenomena
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Microstructural characterization of patterned gallium arsenide grown on 〈001〉 silicon substrates

R. J. Matyi, H. Shichijo, T. M. Moore, and H‐L. Tsai

Appl. Phys. Lett. 51, 18 (1987); http://dx.doi.org/10.1063/1.98890 (3 pages) | Cited 25 times

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The microstructure of patterned GaAs grown on Si substrates by molecular beam epitaxy has been examined with both transmission and scanning electron microscopies. The GaAs was found to be single crystal with excellent morphology to the limit of the plasma oxide defining mask. In samples where the native oxide was not completely desorbed from the silicon substrate, the GaAs surface morphology was observed to degrade significantly within 20 μm of the single crystal to polycrystalline transition. Even in the region exhibiting a high density of surface defects, the underlying GaAs remained single crystal. Transmission electron microscopy showed a very low defect density in the center of the patterned growth region. The transition from polycrystalline to single‐crystal growth occurred directly above the termination point of the oxide mask.
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68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.65.-b Surface treatments

Effect of deposition process on the thin‐film ZnS/p‐Si interface

D. Sands, K. M. Brunson, C. B. Thomas, and H. S. Reehal

Appl. Phys. Lett. 51, 21 (1987); http://dx.doi.org/10.1063/1.98892 (3 pages) | Cited 12 times

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Thin films of ZnS have been deposited on p‐Si by evaporation, radio‐frequency sputtering, and magnetron sputtering to form metal‐insulator‐semiconductor structures. The 1 MHz admittance‐voltage characteristics of each have been compared for a qualitative study of the ZnS/p‐Si interface. It is shown that radio‐frequency sputtering results in Fermi‐level pinning, which is ascribed to the presence of silicon dangling bonds caused by radiation damage. It is argued that this damage is advantageous for ZnS/p‐Si electroluminescent diodes.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Cd Deposition by sputtering

InGaAs‐InP multiple quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition

M. S. Skolnick, L. L. Taylor, S. J. Bass, A. D. Pitt, D. J. Mowbray, A. G. Cullis, and N. G. Chew

Appl. Phys. Lett. 51, 24 (1987); http://dx.doi.org/10.1063/1.98893 (3 pages) | Cited 37 times

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The optical and structural properties of multiple quantum wells of InGaAs‐InP grown by atmospheric pressure metalorganic chemical vapor deposition are reported. Room‐temperature excitons are resolved for well widths from 50 to 200 Å. Below 50 K, exciton linewidths, in absorption, of less than 10 meV are obtained. Absorbances for allowed valence to conduction subband transitions are found to be independent of well width, as expected in the two‐dimensional limit. A lower bound for the conduction‐band discontinuity of 235±20 meV is obtained.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Characterization of interface defects in GaAs‐GaAlAs superlattices

A. Mauger, S. L. Feng, and J. C. Bourgoin

Appl. Phys. Lett. 51, 27 (1987); http://dx.doi.org/10.1063/1.98875 (3 pages) | Cited 5 times

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Capacitance transients in a 20‐20 Å GaAs‐Ga0.7 Al0.3As n‐type (3×1016 cm−3) Si‐doped superlattice have been performed. In the temperature range 50–100 K, a logarithmic time decay is observed. We attribute this time decay to the existence of a continuum of deep levels in the fundamental gap of the superlattice, related to electron traps located at the GaAs‐GaAlAs interfaces.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
68.35.Dv Composition, segregation; defects and impurities
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Nonlinear excitonic optical absorption in GaInAs/InP quantum wells

A. M. Fox, A. C. Maciel, M. G. Shorthose, J. F. Ryan, M. D. Scott, J. I. Davies, and J. R. Riffat

Appl. Phys. Lett. 51, 30 (1987); http://dx.doi.org/10.1063/1.98876 (3 pages) | Cited 18 times

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We have studied the saturation of optical absorption in GaInAs/InP quantum wells at room temperature. Using optical excitation from a tunable cw Co:MgF2 laser, we find a saturation intensity of 70 W cm−2 when exciting resonantly at the n=1 heavy‐hole exciton, and we deduce values of the nonlinear absorption and refraction coefficients −60 cm W−1 and −0.3 cm2 kW−1, respectively. The saturation intensity in the quantum well is significantly lower than in bulk GaInAs, and also in GaAs quantum wells.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
71.35.-y Excitons and related phenomena
42.65.-k Nonlinear optics
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

C. J. Sandroff, R. N. Nottenburg, J.‐C. Bischoff, and R. Bhat

Appl. Phys. Lett. 51, 33 (1987); http://dx.doi.org/10.1063/1.98877 (3 pages) | Cited 391 times

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With a simple chemical treatment we have passivated nonradiative recombination centers at the periphery of a GaAs/AlGaAs heterostructure bipolar transistor, resulting in a 60‐fold increase in the current gain of the device at low collector currents. This large enhancement in gain was achieved by spin coating thin films of Na2S9H2O onto the devices after their fabrication. We briefly discuss the passivation mechanism and the implications for other III‐V optoelectronic devices.
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85.30.Pq Bipolar transistors
81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.40.Rs Electrical and magnetic properties related to treatment conditions

Improvements in the heteroepitaxy of GaAs on Si

R. M. Lum, J. K. Klingert, B. A. Davidson, and M. G. Lamont

Appl. Phys. Lett. 51, 36 (1987); http://dx.doi.org/10.1063/1.98878 (3 pages) | Cited 37 times

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Successful application of GaAs on Si heteroepitaxy to majority‐carrier device fabrication has recently been demonstrated. However, the quality of the GaAs heteroepitaxial films is considerably below that routinely achieved for films grown on GaAs substrates. We have investigated the initial growth stages of GaAs on Si using ion channeling and double‐crystal ‐ray diffraction, and report improvements in the growth technique leading to higher quality GaAs films. The crystalline perfection of the films was found to be critically dependent on the growth parameters of the initial GaAs buffer layer. Growth interruption after deposition of this layer, followed by an in situ annealing step (10 min at 750 °C) prior to final GaAs growth, improved both the structural and optical properties of the films.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Stable continuous room‐temperature laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures grown on Si

D. W. Nam, N. Holonyak, K. C. Hsieh, R. W. Kaliski, J. W. Lee, H. Shichijo, J. E. Epler, R. D. Burnham, and T. L. Paoli

Appl. Phys. Lett. 51, 39 (1987); http://dx.doi.org/10.1063/1.98879 (3 pages) | Cited 10 times

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Data are presented demonstrating stable room‐temperature continuous (cw) photopumped laser operation of an AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) grown on Si by a combination of molecular beam epitaxy and metalorganic chemical vapor deposition. The cw 300 K laser operation of the single well AlxGa1−xAs‐GaAs QWH occurs at an excitation threshold of 6.7×103 W/cm2 (Jeq=2.8×103 A/cm2), or a factor of 10 lower than similar multiple well QWH’s. The laser operation is stable for four (or more) hours, the length of the ‘‘test.’’
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Nonequilibrium electron transport in bipolar devices

A. F. J. Levi and Y. Yafet

Appl. Phys. Lett. 51, 42 (1987); http://dx.doi.org/10.1063/1.98881 (3 pages) | Cited 37 times

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The dynamics of nonequilibrium electron transport in bipolar devices have been investigated by calculating minority‐carrier elastic and inelastic scattering rates as a function of energy for different majority‐carrier concentrations in typical p‐type III‐V semiconductors. Scattering rates depend on the majority‐carrier concentration and a constraint involving the ratio of electron and heavy‐hole effective mass.
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85.30.Pq Bipolar transistors
85.30.De Semiconductor-device characterization, design, and modeling
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Dp General theory, scattering mechanisms

In situ study of the molecular beam epitaxy of CoSi2 on (111) Si by transmission electron microscopy and diffraction

J. M. Gibson, J. L. Batstone, and R. T. Tung

Appl. Phys. Lett. 51, 45 (1987); http://dx.doi.org/10.1063/1.98882 (3 pages) | Cited 49 times

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The growth of CoSi2 has been studied by deposition and reaction of Co on clean Si (111) surfaces in situ in a modified ultrahigh vacuum transmission electron microscope. On deposition of nominally 20 Å Co at room temperature, strong interaction between Si and Co occurs yielding an epitaxial film which is believed to be a hexagonally distorted form of the Co2Si structure. On heating to ∼350 °C the growth of epitaxial CoSi is observed, which transforms to CoSi2 at ∼450 °C. Silicon‐rich phases propagate by lateral motion of phase boundaries. Substantial pinhole density arises in films only after annealing at higher temperatures. The B orientation dominates under similar annealing conditions. In contrast to NiSi2, the growth of cobalt silicide films on Si is dominated by bulk phase formation, with interfacial energy minimized in all cases by epitaxy.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification

Picosecond relaxation of hot‐carrier distributions in GaAs/GaAsP strained‐layer superlattices

D. C. Edelstein, C. L. Tang, and A. J. Nozik

Appl. Phys. Lett. 51, 48 (1987); http://dx.doi.org/10.1063/1.98883 (3 pages) | Cited 14 times

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We have studied the energy relaxation of hot carriers in GaAs/GaAs0.5P0.5 strained‐layer superlattices following picosecond photoexcitation. A significant enhancement of highly excited carrier distribution lifetimes over those of bulk GaAs was observed at cryogenic as well as room temperatures. These results support the explanation of photocurrent results reported for solar photoelectrodes made with these structures. Comparison results were also obtained for a GaAs/AlGaAs multiple quantum well structure which showed even longer hot‐carrier lifetimes.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors
73.50.Pz Photoconduction and photovoltaic effects

Long‐range order in InxGa1−xAs

T. S. Kuan, W. I. Wang, and E. L. Wilkie

Appl. Phys. Lett. 51, 51 (1987); http://dx.doi.org/10.1063/1.98884 (3 pages) | Cited 101 times

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We have found by electron diffraction that In0.5Ga0.5As thin crystals, grown on InP substrates by molecular beam epitaxy along the 〈110〉 direction, exhibit a long‐range order identical to those observed previously in the AlxGa1−xAs alloy system. In the ordered In0.5Ga0.5As structure, the 0, 0, 0 and 1/2, 1/2, 0 sites in each unit cell are preferentially occupied by Ga atoms, and the 1/2, 0, 1/2 and 0, 1/2, 1/2 sites are occupied by In atoms. Our diffraction results also indicate the presence of a high density of antiphase boundaries in the ordered In0.5Ga0.5As phase.
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68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification

Gate oxide integrity and minority‐carrier lifetime correlated with Si wafer polish damage

J. Lee, C.‐C. D. Wong, C. Y. Tung, W. Lee Smith, S. Hahn, and M. Arst

Appl. Phys. Lett. 51, 54 (1987); http://dx.doi.org/10.1063/1.98885 (3 pages) | Cited 2 times

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This study investigated the effects of Si wafer polish damage on the electrical performance and integrated circuits, using metal‐oxide‐semiconductor capacitors as the test structures. These test capacitors were fabricated with 100 or 250 Å oxide layers thermally grown on wafers having varied polish‐damaged surfaces. Field‐dependent and time‐dependent breakdown data were measured and correlated with the surface polish quality as characterized by thermal wave (TW) modulated reflectance measurements. To study the effects of damage remaining in the silicon beneath the Si/SiO2 interface after the formation of the capacitors, the minority‐carrier lifetime was measured and also correlated with the TW values obtained on the starting (nonprocessed) wafer surfaces. The results of this study established that increased polish damage, indicated by higher TW values, adversely affects thin oxide breakdown integrity and reduces the minority‐carrier lifetime.
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85.40.Bh Computer-aided design of microcircuits; layout and modeling
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.40.Rs Electrical and magnetic properties related to treatment conditions

Structure of the single‐phase high‐temperature superconductor YBa2Cu3O7−δ

M. A. Beno, L. Soderholm, D. W. Capone, D. G. Hinks, J. D. Jorgensen, J. D. Grace, Ivan K. Schuller, C. U. Segre, and K. Zhang

Appl. Phys. Lett. 51, 57 (1987); http://dx.doi.org/10.1063/1.98886 (3 pages) | Cited 357 times

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We have determined the crystal structure of the single‐phase stoichiometric high‐temperature superconductor in the Y‐Ba‐Cu‐O system using high‐resolution neutron powder diffraction. This compound has an orthorhombic structure with space group Pmmm and lattice constants a=3.8231 Å, b=3.8864 Å, and c=11.6807 Å. The structure consists of ‘‘dimpled’’ CuO2 layers in the a‐b planes loosely bonded by one‐dimensional fencelike square‐planar CuO3 chains in the b‐c planes.
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61.66.Bi Elemental solids
74.70.-b Superconducting materials other than cuprates
61.05.fm Neutron diffraction
FREE

Erratum: Second harmonic generation in poled polymer films [Appl. Phys. Lett. 49, 248 (1986)]

K. D. Singer, J. E. Sohn, and S. J. Lalama

Appl. Phys. Lett. 51, 60 (1987); http://dx.doi.org/10.1063/1.99014 (1 page)

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Abstract Unavailable
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Qn Polymers; organic compounds
42.82.-m Integrated optics
05.70.-a Thermodynamics
99.10.Cd Errata
FREE

Erratum: Nonlinear nonreciprocity in a coherent mismatched directional coupler [Appl. Phys. Lett. 49, 752 (1986)]

S. Trillo and S. Wabnitz

Appl. Phys. Lett. 51, 60 (1987); http://dx.doi.org/10.1063/1.99015 (1 page)

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Abstract Unavailable
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63.10.+a General theory
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.65.Pc Optical bistability, multistability, and switching, including local field effects
99.10.Cd Errata
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