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7 Sep 1987

Volume 51, Issue 10, pp. 707-778


Low‐threshold room‐temperature cw operation of (AlGaAs)m(GaAs)n superlattice quantum well lasers emitting at ∼680 nm

T. Hayakawa, T. Suyama, K. Takahashi, M. Kondo, S. Yamamoto, and T. Hijikata

Appl. Phys. Lett. 51, 707 (1987); http://dx.doi.org/10.1063/1.98895 (3 pages) | Cited 8 times

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Low cw threshold current of 45 mA and high differential quantum efficiency of 78% have been achieved at room temperature in an (Al0.6Ga0.4As)2(GaAs)2 superlattice quantum well laser emitting at 681 nm. The quantum well structure has been optimized to minimize the threshold current density at 680 nm. The new ridge‐waveguide structure with a current‐blocking supporting region is employed to reduce the thermal resistance.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission

Effect of size nonuniformity on the absorption spectrum of a semiconductor quantum dot system

Wei‐Yu Wu, J. N. Schulman, T. Y. Hsu, and Uzi Efron

Appl. Phys. Lett. 51, 710 (1987); http://dx.doi.org/10.1063/1.98896 (3 pages) | Cited 55 times

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The interband optical absorption of a nonuniform semiconductor quantum dot system is calculated. The effect of dot size variation on the resolvability of the absorption peaks is estimated. The dots are assumed to be cubic, with a size distribution described by a Gaussian function. It is shown that the total absorption spectrum of such a dot system depends strongly on the dot size distribution described by the parameter ξ, the ratio of the standard deviation of the dot size to the average dot size of the system. The range of ξ values for which the absorption peaks are resolvable is given.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Multiple quantum well coupling element with losses

M. Cada, R. C. Gauthier, B. E. Paton, and J. M. Glinski

Appl. Phys. Lett. 51, 713 (1987); http://dx.doi.org/10.1063/1.98897 (3 pages) | Cited 5 times

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A nonlinear directional coupling element consisting of a GaAs‐based multiple quantum well (MQW) heterostructure sandwiched between two slab optical waveguides is analyzed numerically with optical absorption losses in the MQW included. Optical waveguides are designed to be made of lossless AlGaAs slabs of an appropriate composition corresponding to the wavelength of operation. Calculations indicate an improvement in the element’s overall propagation attenuation by about two orders of magnitude when compared to previous results dealing directly with MQW optical waveguides. Promising element performance characteristics are reported.
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42.79.Gn Optical waveguides and couplers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Characterization of frequency dispersion in Ti‐indiffused lithium niobate optical devices

J. L. Nightingale, R. A. Becker, P. C. Willis, and J. S. Vrhel

Appl. Phys. Lett. 51, 716 (1987); http://dx.doi.org/10.1063/1.98898 (3 pages) | Cited 6 times

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The frequency dispersion of integrated optic interferometers fabricated on different lithium niobate substrate orientations is characterized. Dispersion in the dielectric constants and the electro‐optic coefficients causes most device configurations to have a significantly different electro‐optic response at frequencies above and below the acoustic resonances. Only the configuration that uses the r33 electro‐optic coefficient displays a broadband, well behaved frequency response.
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07.60.Ly Interferometers
42.79.Gn Optical waveguides and couplers
78.20.Jq Electro-optical effects
77.22.Ch Permittivity (dielectric function)

Nonselective etching of GaAs/AlGaAs double heterostructure laser facets by Cl2 reactive ion etching in a load‐locked system

G. Allen Vawter, Larry A. Coldren, James L. Merz, and Evelyn L. Hu

Appl. Phys. Lett. 51, 719 (1987); http://dx.doi.org/10.1063/1.98899 (3 pages) | Cited 24 times

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Reactive ion etching was used for etching laser facets of GaAs/AlGaAs transverse junction stripe lasers. A new load‐locked reactive ion etching system was developed to dramatically reduce the background partial pressure of O2 and H2O in the chamber, substantially reducing the oxidation of AlGaAs and permitting equal rate etching of GaAs and AlGaAs with smooth vertical facets. Etching is performed with a chlorine plasma at a low pressure (0.5 mTorr), and bias voltage (−350 V) at a rate of ∼850 Å/min. This simple, single‐step dry etching process is suitable for optoelectronic integration and eliminates the requirement of unreliable wet chemical etching or microcleaving techniques. This new system is used to fabricate transverse junction stripe lasers with facet reflectivities of more than 16%. These high quality dry etched facets result in only a 7.5% increase of the threshold current above that of lasers with cleaved facets.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
81.65.-b Surface treatments
42.82.-m Integrated optics

Second harmonic generation in Ge‐doped fibers with a mode‐locked Kr+ laser

B. Valk, E. M. Kim, and M. M. Salour

Appl. Phys. Lett. 51, 722 (1987); http://dx.doi.org/10.1063/1.98900 (3 pages) | Cited 10 times

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We report on frequency doubling of the 647.1 nm line from a mode‐locked Kr+ laser in a single‐mode fiber with pure Ge‐doped core. The harmonic light at 323.5 nm builds up after about 20 min of laser irradiation at 647.1 nm. Peak powers as low as 600 W were sufficient to prepare the fibers for second harmonic generation.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.81.Gs Birefringence, polarization

Transmission gratings that diffract 8 keV x rays

R. M. Bionta

Appl. Phys. Lett. 51, 725 (1987); http://dx.doi.org/10.1063/1.98901 (3 pages) | Cited 5 times

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We have created and characterized a transmissive diffraction grating that disperses 8 keV x rays. The grating has a period of 7077±70 Å and consists of opaque zones of Ta separated by transparent zones of Al. It was fabricated by sputtering alternating layers of Al and Ta onto a glass optical flat and then slicing the coating into a 17‐μm‐thick slab. We tested the performance of the grating against a theoretical prediction by exposing the grating to 8 keV radiation from a Cu x‐ray source and observing the interference pattern.
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42.79.Dj Gratings
07.85.-m X- and γ-ray instruments
78.66.Bz Metals and metallic alloys
81.15.Cd Deposition by sputtering

55 kW, 240 fs pulse generation from a cavity dumped, synchronously pumped dye laser and its application to pulse compression

Masataka Nakazawa, Takashi Nakashima, Hirokazu Kubota, and Shigeyuki Seikai

Appl. Phys. Lett. 51, 728 (1987); http://dx.doi.org/10.1063/1.99006 (3 pages) | Cited 3 times

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A cavity dumped, synchronously pumped femtosecond dye laser is newly described. The laser has a linear cavity configuration with a controller of group velocity dispersion, resulting in pulses as short as 160–240 fs with a peak power of 55 kW. Utilizing a polarization‐preserving fiber and a pair of Brewster‐angled TeO2 prisms, optical pulses as short as 56 fs with a peak power of 188 kW have been realized at a repetition rate of 3.8 MHz.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.55.Mv Dye lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Low‐threshold disorder‐defined buried‐heterostructure AlGaAs diode lasers by anisotropic diffusion of laser‐incorporated Si

J. E. Epler, R. D. Burnham, R. L. Thornton, and T. L. Paoli

Appl. Phys. Lett. 51, 731 (1987); http://dx.doi.org/10.1063/1.98849 (3 pages) | Cited 13 times

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In laser‐assisted disordering of AlGaAs heterostructures, the Si impurity is locally incorporated with a scanned laser beam. A subsequent thermal diffusion disorders the crystal layer structure by impurity‐induced disordering. Data are presented indicating that under certain conditions the Si diffusion is anisotropic and proceeds most rapidly along the plane of the active region. The shape of the anisotropic disordering front is well suited to fabricating low‐threshold buried‐heterostructure (BH) lasers. Data describing the characteristics of the first BH lasers fabricated using the anisotropic diffusion are presented. The minimum cw threshold current is 10 mA and the maximum power output is 75 mW.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Laser blow‐off plasma propagating in low‐pressure gas

J. S. Bakos, P. N. Ignácz, J. Szigeti, and J. Kovács

Appl. Phys. Lett. 51, 734 (1987); http://dx.doi.org/10.1063/1.98850 (3 pages) | Cited 7 times

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The change of the properties of the plasma ball created in the laser blow‐off process is investigated in interaction with residual gas and buffer gas particles during its flight in space. The main process of the interaction is the collision leading to plasma particle loss. The center of mass velocity and the temperature of the ball weakly depend on the buffer gas density because the plasma is mainly collisionless.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.70.Nc Particle measurements
52.25.-b Plasma properties

Synthesis of diamond films in a rf induction thermal plasma

Seiichiro Matsumoto, Mototsugu Hino, and Toyohiko Kobayashi

Appl. Phys. Lett. 51, 737 (1987); http://dx.doi.org/10.1063/1.98851 (3 pages) | Cited 97 times

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Microcrystals and microcrystalline films of diamond were prepared on molybdenum substrates in a thermal plasma which was produced by rf inductive heating in an argon‐hydrogen‐methane mixture gas under 1 atm pressure. The deposition rate amounted to 1 μm/min.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology

High‐pressure study of solid phase epitaxial regrowth in implanted amorphous GaAs

C. Licoppe and H. Savary

Appl. Phys. Lett. 51, 740 (1987); http://dx.doi.org/10.1063/1.98852 (3 pages) | Cited 4 times

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A new in situ technique for determination of solid phase epitaxial regrowth kinetics under high‐pressure conditions is described. It is applied to the study of pressure effects on recrystallization kinetics of amorphous implanted GaAs. The results show that the epitaxial growth rate is enhanced with pressure. An empirical formalism is developed describing the effect of pressure as a softening of the acoustic modes and a consequent decrease of the activation energies. Good agreement is obtained with the experimental data.
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81.15.Np Solid phase epitaxy; growth from solid phases
62.50.-p High-pressure effects in solids and liquids
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Reflection electron microscopic observation of high‐temperature grown GaAs surfaces of molecular beam epitaxy

N. Shimizu and S. Muto

Appl. Phys. Lett. 51, 743 (1987); http://dx.doi.org/10.1063/1.98853 (3 pages) | Cited 4 times

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We used reflection electron microscopy (REM) to observe GaAs (001) surfaces grown at 700 °C by molecular beam epitaxy. The REM images revealed such interesting features as high step density and large undulations that occurred even though we interrupted epitaxial growth for 3 min, in an attempt to produce a flat surface. A cross section of the large undulation showed a structure consisting almost entirely of plateaus, 0.1–2 μm wide and several monolayers high but less than 30 Å. Small steps distributed uniformly across the tops of these plateaus appeared comparatively straight in the [110] direction but appeared to ‘‘zigzag’’ in the [110] direction—a phenomenon we think may have been caused by Ga surface migration anisotropy.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Photoconductivity in CuInSe2 thin films

V. Ramanathan, T. Datta, and R. Noufi

Appl. Phys. Lett. 51, 746 (1987); http://dx.doi.org/10.1063/1.98854 (3 pages) | Cited 4 times

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We report the photoconductivity spectra of CuInSe2 thin films of precisely defined compositions that are required to fabricate high‐efficiency CdS/CuInSe2 thin‐film solar cells. The Cu‐deficient, high‐resistivity CuInSe2 layer is found to be much more photoconducting than the stoichiometric, low‐resistivity CuInSe2. We show that the spectral dependence of the photoconductivity of the composite CuInSe2 layer is intimately related to the spectral response of the solar cells.
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73.50.Pz Photoconduction and photovoltaic effects
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
84.60.Jt Photoelectric conversion

Annealing induced strain in 31P+‐implanted Si (111) and Si (100)

L. Zsoldos, G. Petó, E. Zsoldos, G. Brogren, and J. Kanski

Appl. Phys. Lett. 51, 749 (1987); http://dx.doi.org/10.1063/1.98855 (3 pages) | Cited 2 times

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The thermal annealing of (100) and (111) oriented Si crystals after high dose implantation with 80 keV 31P+ ions was followed by double‐crystal x‐ray diffractometry. Analysis of the rocking curves shows that at higher temperature annealings after regrowth at 630 °C, P atoms may leave their substitutional position at temperatures higher than 700 °C, depending upon the implantation dose and surface orientation.
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61.80.Jh Ion radiation effects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.uf Ge and Si
61.66.Bi Elemental solids

Variation of the critical layer thickness with In content in strained InxGa1−xAs‐GaAs quantum wells grown by molecular beam epitaxy

T. G. Andersson, Z. G. Chen, V. D. Kulakovskii, A. Uddin, and J. T. Vallin

Appl. Phys. Lett. 51, 752 (1987); http://dx.doi.org/10.1063/1.98856 (3 pages) | Cited 164 times

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The critical width Lc for misfit dislocation generation has been determined for molecular beam epitaxy grown strained InxGa1−xAs (0.1<x≤1) quantum wells in a GaAs matrix by means of photoluminescence measurements. For the full alloy region the dependence Lc(x) is in good agreement with the theoretical expression proposed by J. W. Matthews and A. E. Blakeslee [J. Cryst. Growth 27, 118 (1974)].
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.55.Cr III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.-a Thin film structure and morphology

Effect of As overpressure during annealing on the nonuniformity of activation efficiency in Si‐implanted GaAs layer

Takashi Sato, Michio Tajima, and Koichi Ishida

Appl. Phys. Lett. 51, 755 (1987); http://dx.doi.org/10.1063/1.98857 (3 pages) | Cited 2 times

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The effects of As overpressure during annealing on nonuniformity, i.e., the variations of sheet carrier concentration and Hall mobility across wafers, have been studied for Si‐implanted undoped semi‐insulating GaAs. The nonuniformity was found to be suppressed by annealing under high As overpressure. It is suggested that the high As overpressure suppresses the As vacancy generation during annealing which may induce the nonuniformity due to the local variation of compensation ratio of [SiAs]/[SiGa] around a dislocation.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.My Galvanomagnetic and other magnetotransport effects
61.72.jd Vacancies
61.72.jj Interstitials

Raman scattering in Ga0.47In0.53As/InP superlattices grown by metalorganic vapor phase epitaxy

S. T. Davey, P. C. Spurdens, B. Wakefield, and A. W. Nelson

Appl. Phys. Lett. 51, 758 (1987); http://dx.doi.org/10.1063/1.98858 (3 pages) | Cited 7 times

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Raman scattering in two Ga0.47In0.53As/InP superlattices is reported. Scattering by folded longitudinal acoustic phonons has been observed and interpreted using the elastic continuum theory. The data yield superlattice periods of 18.0 and 12.1 nm. The optical phonon energies are observed to be different from bulk values.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Growth of high‐quality GaxIn1−xAsyP1−y by chemical beam epitaxy

W. T. Tsang, E. F. Schubert, T. H. Chiu, J. E. Cunningham, E. G. Burkhardt, J. A. Ditzenberger, and E. Agyekum

Appl. Phys. Lett. 51, 761 (1987); http://dx.doi.org/10.1063/1.98859 (3 pages) | Cited 23 times

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GaxIn1−xAsyP1−y epilayers closely lattice matched, Δa/a≲5×10−4, have been reproducibly grown over the whole range of composition (y=2.2x, 1>y>0) by chemical beam epitaxy. The relative sticking coefficient (or equivalently the incorporation efficiency into the solid) of arsenic to phosphorus, i.e., SAs/SP was between 1.5 and 3 depending on the material composition. Such values indicate a very efficient incorporation of phosphorous in this process. Very intense efficient luminescence peaks due to excitonic transitions with linewidths full width at half‐maximum as narrow as 3 meV were obtained. Such a linewidth corresponds closely to the intrinsic linewidth due to alloy broadening in GaInAsP alloys. Furthermore, the photoluminescence spectra revealed that the donor‐to‐acceptor pair recombination was nearly absent. Hall measurements on GaxIn1−xAsyP1−y epilayers lattice matched into InP at 300 and 77 K yielded electron mobility values that agreed closely with theoretical values calculated by using the one‐phonon model and the electronegativity difference as the alloy scattering potential for layers with doping levels between 1×1015 cm−3 and 1×1016 cm−3. The 77 K electron mobilities ranged from 2.2×104 to 6.7×104 cm2/V s depending on the quaternary composition.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.55.Cr III-V semiconductors
73.61.Ey III-V semiconductors

2.2 μm GaInAsSb/AlGaAsSb injection lasers with low threshold current density

C. Caneau, J. L. Zyskind, J. W. Sulhoff, T. E. Glover, J. Centanni, C. A. Burrus, A. G. Dentai, and M. A. Pollack

Appl. Phys. Lett. 51, 764 (1987); http://dx.doi.org/10.1063/1.98860 (3 pages) | Cited 21 times

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Double heterostructure 2.2 μm wavelength lasers were fabricated from Ga0.84In0.16As0.15Sb0.85/ AlxGa1−xAs0.04Sb0.96 wafers grown by liquid phase epitaxy. These structures were grown with Al‐rich confinement layers (x=0.4) for optical confinement and thin intermediate cladding layers (x=0.34) to relieve the strain resulting from the lattice mismatch of the Al‐rich confinement layers with respect to the substrate and the active layer. A threshold current density as low as 1.7 kA/cm2 was obtained at room temperature.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Thermionic emission model for the initial regime of silicon oxidation

E. A. Irene and E. A. Lewis

Appl. Phys. Lett. 51, 767 (1987); http://dx.doi.org/10.1063/1.98861 (3 pages) | Cited 29 times

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See Also: Erratum

Show Abstract
The very early stage of the thermal oxidation of single‐crystal Si has been the subject of continual study for the last two decades. In the light of very recent experimental oxidation data on the initial regime, we report that a simple thermionic electron flux from Si into SiO2 closely agrees with the SiO2 film growth rate. The importance of electrons for the oxidation kinetics has also been attested to in several recent experimental studies. Thus a consistent model is presented for the initial oxidation regime based on the electron flux as the rate limiting step.
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81.65.-b Surface treatments
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
79.40.+z Thermionic emission
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Ellipsometric analysis of built‐in electric fields in semiconductor heterostructures

Paul G. Snyder, Jae E. Oh, John A. Woollam, and R. E. Owens

Appl. Phys. Lett. 51, 770 (1987); http://dx.doi.org/10.1063/1.98862 (3 pages) | Cited 7 times

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Measurements of Franz–Keldysh (FK) effects in GaAs‐AlxGa1−xAs heterostructures by variable angle of incidence spectroscopic ellipsometry are reported. The measured FK effects are due to the built‐in band bending at the surface and heterointerfaces, with no externally applied bias or modulating voltage. The polarity of the FK line shape indicates whether the field is uniform or nonuniform (inhomogeneous) in the direction along the growth axis, while the linewidth is determined by the peak field strength. This information can be used to characterize the doping concentration in the AlxGa1−xAs layer.
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78.20.Jq Electro-optical effects
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Photoluminescence and microstructural properties of high‐temperature annealed buried oxide silicon‐on‐insulator

W. M. Duncan, P.‐H. Chang, B.‐Y. Mao, and C.‐E. Chen

Appl. Phys. Lett. 51, 773 (1987); http://dx.doi.org/10.1063/1.98863 (3 pages) | Cited 13 times

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The defect properties of buried oxide silicon‐on‐insulator (SOI) formed by high dose O+ ion implantation and annealed in the temperature range of 1150–1300 °C were examined using photoluminescence (PL) spectroscopy and transmission electron microscopy. The intensity of radiative defect levels at 0.814 and 0.862 eV measured by PL at 4.2 K was observed to decrease with increasing post‐implantation annealing temperature. A direct correlation between the radiative defect band intensities and etch defect density in the top silicon layer was observed. The correlation between defect density and PL defect band intensity was further verified by cross‐sectional transmission electron microscopy of the top silicon. This letter demonstrates for the first time the correlation between PL defect properties and microstructure of buried oxide SOI. From comparisons with radiative defect centers in oxygen precipitated and plastically deformed silicon, the radiative defect states in SOI silicon are shown to result from residual dislocations in the top silicon layer of the SOI structure.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
78.55.Hx Other solid inorganic materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Electron mobility in p‐GaAs by time of flight

R. K. Ahrenkiel, D. J. Dunlavy, D. Greenberg, J. Schlupmann, H. C. Hamaker, and H. F. MacMillan

Appl. Phys. Lett. 51, 776 (1987); http://dx.doi.org/10.1063/1.98864 (3 pages) | Cited 21 times

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The minority‐carrier mobility of electrons in metalorganic chemical vapor deposition grown p‐GaAs has been measured by a diffusion time‐of‐flight technique. Doping levels of 1×1017 and 2×1018 cm−3 were investigated. The measured mobilities were about 2900 and 1300 cm2/V s, respectively. The minority‐carrier mobilities are lower than the expected majority‐carrier mobilities at the same doping levels. The lower mobility is caused by heavy‐hole scattering.
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72.20.Fr Low-field transport and mobility; piezoresistance
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
72.20.Dp General theory, scattering mechanisms
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