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2 Nov 1987

Volume 51, Issue 18, pp. 1389-1467

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Novel physical effects in intersecting waveguides

L. McCaughan, Niraj Agrawal, and G. A. Bogert

Appl. Phys. Lett. 51, 1389 (1987); http://dx.doi.org/10.1063/1.98685 (3 pages) | Cited 6 times

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Previous theory of intersecting waveguides (optical) based on the idea of composite modes is unable to explain a variety of important experimental observations. We have developed a systematic theory which is in good agreement with the experiment. In addition, our theory points out the novel physical effects associated with this geometry. It is found that the crosstalk vanishes for an intersection angle which is twice the angle of rays in the individual waveguides. A sharply peaked radiation pattern from the intersection region of the two waveguides is both predicted and observed for the first time.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Bistability in two‐mode semiconductor lasers via gain saturation

C. L. Tang, A. Schremer, and T. Fujita

Appl. Phys. Lett. 51, 1392 (1987); http://dx.doi.org/10.1063/1.98686 (3 pages) | Cited 33 times

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The conditions required to achieve bistability in two‐mode semiconductor lasers via the nonlinearity associated with gain saturation are discussed. The laser can be switched between the bistable states through coherent or incoherent optical control. Wavelength bistability in such a laser is demonstrated experimentally.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Optical bleaching in an epitaxial (Al,Ga)As Fabry–Perot resonator

P. L. Gourley and T. J. Drummond

Appl. Phys. Lett. 51, 1395 (1987); http://dx.doi.org/10.1063/1.98687 (3 pages) | Cited 3 times

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We report studies of bleaching action in an epitaxial Fabry–Perot resonator grown by molecular beam epitaxy. These new structures hold exciting potential for surface‐emitting lasers, optical switches, and optical modulators. The structure consisted of a multiple quantum well of AlGaAs and GaAs surrounded by two quarter‐wave high reflectors with alternating layers of AlAs and AlGaAs. The spectral and temporal transmittances under intense optical pulses are reported here. The spectral data provide simultaneous information on nonlinear changes in both real and imaginary parts of the refractive index. The temporal data show that the transmittance can be switched up to three orders of magnitude in less than the experimental resolution of 300 ps, and provide evidence for time compression of optical pulses.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
07.60.-j Optical instruments and equipment
42.79.-e Optical elements, devices, and systems

Optical properties of general twisted nematic liquid‐crystal displays

Hiap Liew Ong

Appl. Phys. Lett. 51, 1398 (1987); http://dx.doi.org/10.1063/1.98688 (3 pages) | Cited 25 times

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An analytic expression for the optical field propagating normally in a general twisted nematic liquid‐crystal structure is obtained for the first time. Based upon this, analytic expressions are obtained for the optical transmissions of the general twisted nematic liquid‐crystal displays (including standard twisted nematic, supertwisted, supertwisted birefringence effect, lower twisted, and optical mode interference) with arbitrary polarizer orientations, liquid‐crystal indices of refraction, twist angle, surface pretilt angle, and cell thickness. Routes for improving the display performances are discussed.
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85.60.Pg Display systems
78.20.-e Optical properties of bulk materials and thin films
61.30.-v Liquid crystals
42.25.Bs Wave propagation, transmission and absorption
42.25.Dd Wave propagation in random media

Buried heterostructure lasers by silicon implanted, impurity induced disordering

D. F. Welch, D. R. Scifres, P. S. Cross, and W. Streifer

Appl. Phys. Lett. 51, 1401 (1987); http://dx.doi.org/10.1063/1.98689 (3 pages) | Cited 11 times

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Buried heterostructure lasers have been fabricated using impurity induced disordering from an implanted Si diffusion source. The diffused Si extends over 1 μm deep through the active region where the quantum wells are partially homogenized with the barrier and cladding layers to produce a lower refractive index and higher band‐gap material. The resulting real refractive index waveguide exhibits single longitudinal and transverse mode behavior to greater than 20 mW for a 4‐μm‐wide waveguide.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
66.30.J- Diffusion of impurities

Novel infrared band‐aligned superlattice laser

Perng‐fei Yuh and K. L. Wang

Appl. Phys. Lett. 51, 1404 (1987); http://dx.doi.org/10.1063/1.98690 (3 pages) | Cited 39 times

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A novel infrared laser is proposed which uses the intersubband optical transition in a band‐aligned superlattice. In this band‐aligned superlattice laser, the miniband discontinuity within the conduction of valence band functions as a band offset in the heterojunction structure, and the population inversion is achieved by current injection as in the conventional heterojunction laser. It is more flexible than a heterojunction laser of a quantum well laser since one may tailor the bandwidth and band structures as well as the band gap of the minibands. Also indirect band‐gap materials like Si and Ge can be used for lasing in the intersubband transitions. The intersubband optical transition is similar to an atomic two‐level system which exhibits low threshold current, and a gain coefficient with weak temperature dependence and a narrow spectrum which is determined only by the line‐shape function. These special features make the band‐aligned superlattice laser competitive with and perhaps superior to the quantum well dot laser which is not presently feasible.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.60.By Design of specific laser systems

Reproducible liquid phase epitaxial growth of InGaAsP buried heterostructure lasers

R. A. Logan, H. Temkin, J. P. Blaha, and K. E. Strege

Appl. Phys. Lett. 51, 1407 (1987); http://dx.doi.org/10.1063/1.98691 (3 pages) | Cited 4 times

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Buried heterostructure lasers are formed using double heterostructure planar layers which are masked and etched to define laser mesas, with final regrowth by liquid phase epitaxy. Controlled melt etching of the exposed wafer surface is introduced just prior to the liquid phase epitaxial regrowth to form etched mesa buried heterostructure lasers. The melt etching uses an In‐InP melt undersaturated by only ∼0.2 °C and does not degrade the dimensional shape of the etched mesas. This process is shown to dramatically improve the growth reproducibility and results in excellent device characteristics. This closely controlled removal of the mesa sidewall just prior to epitaxy is also expected to contribute to increased laser reliability.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

How perfect is a perfect crystal? Part‐per‐billion level mosaicity measurements in silicon

Moshe Deutsch, Michael Hart, and Stewart Cummings

Appl. Phys. Lett. 51, 1410 (1987); http://dx.doi.org/10.1063/1.98998 (3 pages) | Cited 7 times

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A novel method for measuring mosaicity in nearly perfect crystals is presented. The method employs a monolithic Laue case two‐crystal diffractometer cut entirely from the crystal under investigation for measuring rocking curve broadening. The advantages of this arrangement as compared to conventional separate crystal diffractometers are greatly enhanced stability and complete elimination of alignment problems. High‐order or symmetry‐forbidden reflections having a very narrow intrinsic half‐width of ∼8 ms of arc are used to obtain high resolution. Measurements on a commercial dislocation‐free silicon crystal show line broadening of (54±16)×10−9 rad at different points on the crystal. The broadening is discussed in terms of mosaic tilt and block size. The method is shown to have an ultimate resolution of a few parts in 1010 for these quantities.
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61.05.cp X-ray diffraction
61.72.-y Defects and impurities in crystals; microstructure
61.66.Bi Elemental solids

Temperature dependence of hydrogen vibrational modes in passivated boron‐doped silicon

M. Stutzmann and C. P. Herrero

Appl. Phys. Lett. 51, 1413 (1987); http://dx.doi.org/10.1063/1.98641 (3 pages) | Cited 12 times

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Vibrational spectra of hydrogen and deuterium in the passivated layer of bulk boron doped crystalline silicon are investigated by Raman scattering. The temperature dependence of line positions and widths is measured in the range 5–450 K and for H(D) concentrations between 1×1019 and 1×1020 cm−3. A strong correlation between shift and broadening of the Raman lines is observed for all samples.
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78.30.Hv Other nonmetallic inorganics
63.20.Pw Localized modes
61.72.uf Ge and Si

Refractive index, relaxation times and the viscoelastic model in dry‐grown SiO2 films on Si

L. M. Landsberger and W. A. Tiller

Appl. Phys. Lett. 51, 1416 (1987); http://dx.doi.org/10.1063/1.98642 (3 pages) | Cited 28 times

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Inert thermal anneals were performed at various temperatures to determine annealing kinetics of dry thermally grown SiO2 films on Si. Two stages of relaxation are demonstrated. The film relaxes quickly to an intermediate level, and then progresses more slowly toward full relaxation. The relaxation times to attain the fully relaxed refractive index, 1.460, and full ≤3% swelling were found to fall below typical oxidation times at T≥1150 °C, in concurrence with the experimentally observed breakpoint in the refractive index versus growth temperature data. It is concluded that the linear viscoelastic model is sufficient to quantitatively explain the breakpoints in refractive index for both wet and dry thermally grown oxide.
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81.40.Tv Optical and dielectric properties related to treatment conditions
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.60.Bs Mechanical and acoustical properties
78.66.Jg Amorphous semiconductors; glasses

Dielectrically isolated silicon‐on‐insulator islands by masked oxygen implantation

J. R. Davis, A. Robinson, K. J. Reeson, and P. L. F. Hemment

Appl. Phys. Lett. 51, 1419 (1987); http://dx.doi.org/10.1063/1.98643 (3 pages) | Cited 4 times

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A method of forming dielectrically isolated silicon‐on‐insulator device islands by using a thin patterned masking layer during implantation of high doses of oxygen into silicon is described. Due to energy loss in the masking layer, the oxygen ions synthesize both a surface oxide in the masked field regions and, simultaneously, a buried oxide in the unmasked windows. The field oxide is contiguous with the buried oxide under the device islands. This method of achieving total dielectric isolation has potential application in the fabrication of high‐density silicon‐on‐insulator circuits with a very flat topography.
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68.35.Fx Diffusion; interface formation
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
61.72.uf Ge and Si
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Effects of ZnSe epitaxial growth on the surface properties of GaAs

D. J. Olego

Appl. Phys. Lett. 51, 1422 (1987); http://dx.doi.org/10.1063/1.98644 (3 pages) | Cited 19 times

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The epitaxial growth of ZnSe induces changes in the surface properties of GaAs: surface barrier height, surface recombination velocity, and Fermi level pinning. These changes were investigated with Raman and photoluminescence spectroscopies in ZnSe‐GaAs heterostructures with ZnSe layer thickness D ranging from 50 to 5000 nm. The ZnSe layers were grown by molecular beam epitaxy on (100)n‐type GaAs substrates. Barrier heights smaller than 0.1 eV together with lower recombination velocities were obtained for pseudomorphic ZnSe layers with no misfit dislocations at the interface (D≤150 nm). When D exceeds the critical layer thickness and misfit dislocations are present at the interface the barrier height gradually increases with D. The barrier height and the pinning position of the Fermi level depend on the surface density of the dangling bonds generated by the misfit dislocations.
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73.30.+y Surface double layers, Schottky barriers, and work functions
78.55.-m Photoluminescence, properties and materials
78.30.Fs III-V and II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Hot‐electron transport in GaAs in the presence of a magnetic field

P. H. Beton, A. P. Long, and M. J. Kelly

Appl. Phys. Lett. 51, 1425 (1987); http://dx.doi.org/10.1063/1.98645 (3 pages) | Cited 3 times

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We describe the results of the incorporation of magnetic field effects into the Monte Carlo simulation of hot electrons traversing narrow regions of heavily doped GaAs. In addition to accounting for the experimentally observed suppression of the ballistic contribution to the hot‐electron spectrum, a further analysis allows us to infer the spread in transverse energy of the injected hot electrons.We attribute this loss of collimation to scattering by unscreened ionized impurities in the depletion region which is set up when a hot‐electron injector is forward biased.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling
73.50.Bk General theory, scattering mechanisms
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Observation of resonant tunneling through a compositionally graded parabolic quantum well

Susanta Sen, Federico Capasso, Arthur C. Gossard, Richard A. Spah, Albert L. Hutchinson, and S. N. G. Chu

Appl. Phys. Lett. 51, 1428 (1987); http://dx.doi.org/10.1063/1.98646 (3 pages) | Cited 59 times

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We report the first observation of electron resonant tunneling through parabolic quantum wells, compositionally graded by means of short‐period (15 Å) AlxGa1−xAs/GaAs superlattices grown by molecular beam epitaxy. In one structure, comprising a 300‐Å‐wide well compositionally graded from AlAs to GaAs, five equally spaced resonances are observed in the current‐voltage (I‐V) characteristic in good agreement with the theory. In another structure with 432‐Å‐wide wells graded from Al0.30Ga0.70As to GaAs, up to 16 resonances are observed in the I‐V. The first ten correspond to resonant tunneling through the quasi‐bound states of the double barrier while the others are ascribed to electron interference effects associated with virtual levels in the quasi‐continuum energy range above the collector barrier.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Long wavelength InAs1−xSbx/GaAs detectors prepared by molecular beam epitaxy

C. G. Bethea, M. Y. Yen, B. F. Levine, K. K. Choi, and A. Y. Cho

Appl. Phys. Lett. 51, 1431 (1987); http://dx.doi.org/10.1063/1.98647 (2 pages) | Cited 26 times

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We prepared InAs0.02Sb0.98 on semi‐insulating GaAs substrates with molecular beam epitaxy and measured the temperature dependence of the band gap. Photoconducting detectors were measured and found to have high internal quantum efficiency (47%) and high speed (10 ns).
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects
72.80.Ey III-V and II-VI semiconductors
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Impact ionization coefficient ratio in InGaAs/InAlAs superlattice avalanche photodiodes determined from noise measurements

Young‐June Yu, Gijs Bosman, and P. K. Bhattacharya

Appl. Phys. Lett. 51, 1433 (1987); http://dx.doi.org/10.1063/1.98648 (3 pages) | Cited 4 times

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The noise of an In0.53Ga0.47As/In0.52Al0.48As superlattice avalanche photodiode is measured at 700 MHz as a function of applied reverse bias voltage. From the measured data the ratio k of the hole to electron impact ionization coefficients is determined. This ratio is equal to 6 in the field range (0.8–2.3)×105 V/cm; beyond this range k decreases with increasing field. The field dependence of k is attributed to a transition from ionization across the valence‐band‐edge discontinuity to band‐to‐band ionization.
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79.20.Hx Electron impact: secondary emission
85.60.Dw Photodiodes; phototransistors; photoresistors
73.50.Td Noise processes and phenomena
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Ion beam hydrogenation of amorphous silicon

Y. S. Tsuo, E. B. Smith, and S. K. Deb

Appl. Phys. Lett. 51, 1436 (1987); http://dx.doi.org/10.1063/1.98649 (3 pages) | Cited 10 times

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A Kaufman ion beam source was used to implant hydrogen atoms into glow‐discharge‐deposited amorphous silicon materials in which the hydrogen content had been driven out by heating. We found that the hydrogen atoms introduced by this low‐energy (less than 700 eV) ion implantation method bonded predominantly as SiH. An air mass one, photo‐to‐dark‐conductivity ratio as high as 5.6×105 has been obtained with hydrogen‐implanted materials. No light‐induced reduction of the photo‐ and dark conductivities has been observed in these materials after 20 h of AMl illumnination.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.65.-b Surface treatments
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.50.Pz Photoconduction and photovoltaic effects

Model for defect‐impurity pair diffusion in silicon

B. J. Mulvaney and W. B. Richardson

Appl. Phys. Lett. 51, 1439 (1987); http://dx.doi.org/10.1063/1.98650 (3 pages) | Cited 35 times

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A new model for impurity diffusion in silicon by a point defect‐impurity pair mechanism is described. A pair of coupled, nonlinear, partial differential equations for the silicon self‐interstitial and the impurity is derived and solved numerically. The familiar kink and tail of phosphorus and, to a lesser extent, boron diffused profiles arise naturally from the solution. The coupling between defect and impurity becomes smaller at high temperatures and at low impurity concentrations, in agreement with experimental observations. The transient buildup of the defect concentration may have implications for models of rapid thermal processes.
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66.30.J- Diffusion of impurities
61.72.jd Vacancies
61.72.jj Interstitials
66.30.Lw Diffusion of other defects
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Femtosecond hot‐carrier energy relaxation in GaAs

R. W. Schoenlein, W. Z. Lin, E. P. Ippen, and J. G. Fujimoto

Appl. Phys. Lett. 51, 1442 (1987); http://dx.doi.org/10.1063/1.98651 (3 pages) | Cited 39 times

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Excited carrier dynamics in GaAs and Al0.2Ga0.8As are investigated using femtosecond pump and continuum probe techniques. We observe absorption spectral hole burning arising from excited carriers generated by transitions from the split‐off band as well as the heavy‐ and light‐hole bands. Transient absorption saturation measurements indicate that the initial nonthermal carrier distribution thermalizes on a time scale of several tens of femtoseconds.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Lifetime measurements in semiconductors by infrared absorption due to pulsed optical excitation

Z. G. Ling, P. K. Ajmera, M. Anselment, and L. F. DiMauro

Appl. Phys. Lett. 51, 1445 (1987); http://dx.doi.org/10.1063/1.98652 (3 pages) | Cited 11 times

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A new contactless technique for determination of excess carrier lifetime in semiconductors is demonstrated. The technique involves measuring the change in the transmitted intensity of a continuous probe beam (hν<Eg) as a function of time through a semiconductor sample after switching off the excitation from a pulsed pump beam (hνp>Eg). The technique has been applied to silicon samples having different doping densities. The measured lifetime values in the range of 0.5–200 μs on both n‐type and p‐type silicon samples by this new technique agree well with the values obtained by the traditional photoconductive decay method.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Co/Si(111) interface: Formation of an initial CoSi2 phase at room temperature

J. Y. Veuillen, J. Derrien, P. A. Badoz, E. Rosencher, and C. d’Anterroches

Appl. Phys. Lett. 51, 1448 (1987); http://dx.doi.org/10.1063/1.98653 (3 pages) | Cited 35 times

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Ultrathin films (≲50 monolayers) of Co have been deposited on atomically clean 7×7 Si(111) surfaces at room temperature and characterized by in situ surface techniques such as Auger electron spectroscopy and low‐energy electron diffraction. Formation of a boundary CoSi2‐like phase is surprisingly found at a very low coverage range (≲4 monolayers) as evidenced by low‐temperature transport measurements (resistivity and Hall effect) and also by cross‐sectional high‐resolution transmission electron microscopy.
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68.35.Fx Diffusion; interface formation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.At Metal and metallic alloys
73.50.-h Electronic transport phenomena in thin films

Optically induced regeneration of the stable configuration of the EL2 defect in GaAs

H. J. von Bardeleben, N. T. Bagraev, and J. C. Bourgoin

Appl. Phys. Lett. 51, 1451 (1987); http://dx.doi.org/10.1063/1.98654 (3 pages) | Cited 21 times

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Electron paramagnetic resonance measurements on the EL2 defect in semi‐insulating GaAs show that after optically induced quenching into the metastable configuration the original stable configuration can be optically regenerated at temperatures below 140 K. We determined the spectral dependence of this regeneration in the 70–140 K temperature range. It is characterized at 90 K by an absorption band centered at (0.8±0.1) eV. However, the spectral dependence is temperature dependent and the thermal activation energy varies with the photon energy.
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71.55.Eq III-V semiconductors
76.30.Mi Color centers and other defects
61.72.J- Point defects and defect clusters

InP/InGaAsP/InGaAs avalanche photodiodes with 70 GHz gain‐bandwidth product

J. C. Campbell, W. T. Tsang, G. J. Qua, and J. E. Bowers

Appl. Phys. Lett. 51, 1454 (1987); http://dx.doi.org/10.1063/1.98655 (3 pages) | Cited 10 times

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A wide bandwidth (8 GHz) and a high gain‐bandwidth product (70 GHz) have been achieved with InP/InGaAsP/InGaAs avalanche photodiodes (APD’s) grown by chemical beam epitaxy. These APD’s also exhibit low dark current (<150 nA at 90% breakdown), good external quantum efficiency (>90% at λ=1.3 μm), and high avalanche gain (M0≂40).
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85.60.Dw Photodiodes; phototransistors; photoresistors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Lateral optical confinement of the heterostructure semiconductor Raman laser

K. Suto, T. Kimura, and J. Nishizawa

Appl. Phys. Lett. 51, 1457 (1987); http://dx.doi.org/10.1063/1.98656 (2 pages) | Cited 3 times

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This letter describes the first lasing experiment of the heterostructure semiconductor Raman laser with lateral confinement of both the Stokes and pump fields. It has a GaP Raman active layer with thickness of 10 μm and Al0.1Ga0.9P cladding layers. The stripe of the active layer has been fabricated by a plasma etching technique. Steps should be taken to realize the semiconductor Raman laser pumped by an injection laser, applicable to wideband optical communication.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.45.+h Stimulated emission
78.30.Fs III-V and II-VI semiconductors

Ion implantation and annealing of undoped (Al,Ga)As/GaAs heterostructures

H. Baratte, T. N. Jackson, P. M. Solomon, D. C. LaTulipe, D. J. Frank, and J. S. Moore

Appl. Phys. Lett. 51, 1459 (1987); http://dx.doi.org/10.1063/1.98657 (3 pages) | Cited 7 times

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Electrical measurements of n+‐GaAs/π‐(Al,Ga)As/π‐GaAs semiconductor‐insulator‐semiconductor (SIS) heterostructure capacitors and field‐effect transistors (FET’s) show that the (Al,Ga)As/GaAs heterojunction abruptness is well preserved for an arsine flash anneal of 1 s at temperatures up to ∼900 °C. The heterostructure stability is also preserved for a low‐dose silicon implant across the (Al,Ga)As/GaAs heterojunction and subsequent annealing. Arsenic overpressure is found to be necessary, even for short time annealing, to prevent excessive As loss from a GaAs or (Al,Ga)As surface. High mobility enhance–deplete heterostructure SISFET’s with sharp current versus voltage (I‐V) turn‐on characteristics have been fabricated using ion implantation and arsine flash anneal.
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73.40.Ty Semiconductor-insulator-semiconductor structures
85.30.Tv Field effect devices
81.40.Rs Electrical and magnetic properties related to treatment conditions
61.72.U- Doping and impurity implantation
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