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9 Nov 1987

Volume 51, Issue 19, pp. 1475-1562

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Yield dependency on length of AlGaAs/GaAs second‐order distributed feedback lasers with cleaved facets

Shoji Hirata, Toyoharu Ohata, Tadashi Yamamoto, and Chiaki Kojima

Appl. Phys. Lett. 51, 1475 (1987); http://dx.doi.org/10.1063/1.98659 (3 pages) | Cited 1 time

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The effect of length on the yield of second‐order distributed feedback lasers with cleaved facets capable of operating in a single longitudinal mode and on their characteristics has been studied experimentally. The optimum length of 200 μm was determined in reference to the coupling coefficient and the end‐facet reflectivity. A yield of more than 70% was obtained for lasers 200 μm in length capable of operating at a level of at least 10 mW and over.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Efficient 30 mW grating surface‐emitting lasers

G. A. Evans, N. W. Carlson, J. M. Hammer, M. Lurie, J. K. Butler, S. L. Palfrey, L. A. Carr, F. Z. Hawrylo, E. A. James, C. J. Kaiser, J. B. Kirk, and W. F. Reichert

Appl. Phys. Lett. 51, 1478 (1987); http://dx.doi.org/10.1063/1.98660 (3 pages) | Cited 3 times

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A surface‐emitting AlGaAs second‐order distributed Bragg reflector laser using a graded index separate confinement heterostructure with a single quantum well has been fabricated. The surface emitted power is in excess of 30 mW with an external differential quantum efficiency of 20%. These values approach the performance of present commercially available edge‐emitting diode lasers. Under severe current modulation conditions, the stable single longitudinal mode had nearly 30 dB wavelength sidemode rejection, and a near diffraction limited 0.51° full width half‐power beam divergence of the single‐lobe far‐field pattern.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Dj Gratings

Image processing by four‐wave mixing in photorefractive GaAs

Gregory Gheen and Li‐Jen Cheng

Appl. Phys. Lett. 51, 1481 (1987); http://dx.doi.org/10.1063/1.98661 (3 pages) | Cited 11 times

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Three image processing experiments were performed by degenerate four‐wave mixing in photorefractive GaAs. The experiments were imaging by phase conjugation, edge enhancement, and autocorrelation. The results show that undoped, semi‐insulating, liquid‐encapsulated Czochralski‐grown GaAs crystals can be used as effective optical processing media despite their small electro‐optic coefficient.
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42.30.Va Image forming and processing
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Jq Electro-optical effects
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Crystal growth and characterization of 4‐(N,N‐dimethylamino)‐3‐acetamidonitrobenzene, a new organic material for nonlinear optics

J.‐C. Baumert, R. J. Twieg, G. C. Bjorklund, J. A. Logan, and C. W. Dirk

Appl. Phys. Lett. 51, 1484 (1987); http://dx.doi.org/10.1063/1.98662 (3 pages) | Cited 43 times

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The linear and nonlinear optical properties have been determined for a new organic nonlinear material 4‐(N,N‐dimethylamino)‐3‐acetamidonitrobenzene. Room‐temperature angularly tuned type I phase matching for doubling of 1.064 μm radiation was achieved with a deff =27 pm/V. Favorable crystal growth habits were observed.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Qn Polymers; organic compounds
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Birefringence‐induced polarization counter rotation in a semiconductor laser

T. Fujita, A. Schremer, and C. L. Tang

Appl. Phys. Lett. 51, 1487 (1987); http://dx.doi.org/10.1063/1.98663 (3 pages) | Cited 1 time

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The effects of a birefringence in a semiconductor laser are reported. We demonstrate Nπ (where N is an odd integer) phase retardation between the TE and TM modes in the laser output beam resulting in the phenomenon of counter rotation of the output polarization. A numerical value for the birefringence is estimated.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Efficient operation of a chemically pumped oxygen iodine laser utilizing dilute hydrogen peroxide

S. Yoshida, H. Fujii, T. Sawano, M. Endo, and T. Fujioka

Appl. Phys. Lett. 51, 1490 (1987); http://dx.doi.org/10.1063/1.98664 (3 pages) | Cited 6 times

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A chemically pumped oxygen iodine laser system has been operated employing 35 wt. % H2O2 rather than commonly used 90 wt. % H2O2. Laser power as high as 40 W has been extracted. The maimum overall efficiency of 20.7%, which is almost 25% higher than the previously reported best data, has been achieved.
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42.55.Ks Chemical lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
42.55.Mv Dye lasers

Photon detection with cooled avalanche photodiodes

D. L. Robinson and B. D. Metscher

Appl. Phys. Lett. 51, 1493 (1987); http://dx.doi.org/10.1063/1.98665 (2 pages) | Cited 4 times

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Commercial avalanche photodiodes have been operated as single‐photon detectors at an optimum operating temperature and bias voltage. These detectors were found to be 1.5–3 times more sensitive than presently available photomultiplier tubes (PMT’s). Both single‐photon detection probability and detector noise increase with bias voltage; detection probabilities greater than twice that of a PMT were obtained with detector noise levels below 100 counts per second. Higher probabilities were measured at higher noise levels. The sources of noise and their dependence on temperature and bias voltage are discussed.
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85.60.Dw Photodiodes; phototransistors; photoresistors
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
85.60.Ha Photomultipliers; phototubes and photocathodes

Negative ion formation at a barium surface in contact with a hydrogen plasma

C. F. A. van Os, R. M. A. Heeren, and P. W. van Amersfoort

Appl. Phys. Lett. 51, 1495 (1987); http://dx.doi.org/10.1063/1.98613 (3 pages) | Cited 14 times

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Measurements on the production of negative hydrogen ions at a barium surface, in contact with a hydrogen plasma, are presented and discussed. In spite of the high work function of barium compared to more conventional cesiated converter surfaces, considerable yields of negative ions were produced. Conversion efficiencies up to 4% were achieved. No negative barium ions were observed.
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52.40.Hf Plasma-material interactions; boundary layer effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
52.75.-d Plasma devices
81.05.Bx Metals, semimetals, and alloys

Direct writing onto Si by electron beam stimulated etching

Shinji Matsui and Katsumi Mori

Appl. Phys. Lett. 51, 1498 (1987); http://dx.doi.org/10.1063/1.98614 (2 pages) | Cited 17 times

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Direct writing onto Si has been demonstrated by electron beam induced surface reaction using a XeF2 source. The electron beam stimulated etched depth for Si(100) is proportional to the electron dose. Etch depth by electron beam stimulated etching is 500 nm at 10 kV accelerating voltage, 4×10−3 C/cm2 dose, and 5 mTorr XeF2 gas pressure. An enormously high etching yield of about 100 Si atoms per electron has been observed for electron stimulated etching using the XeF2 source. A 0.5‐μm linewidth pattern has been fabricated at a 4×10−3 C/cm2 dose.
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81.65.-b Surface treatments
79.20.Kz Other electron-impact emission phenomena
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Focused ion beam induced fine patterns of organogold films

Y. Ohmura, T. Shiokawa, K. Toyoda, and S. Namba

Appl. Phys. Lett. 51, 1500 (1987); http://dx.doi.org/10.1063/1.98615 (3 pages) | Cited 5 times

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It has been found that a relatively low‐dose focused ion beam irradiation makes an organogold film insoluble to its solvents (e.g., trichloroethylene), resulting in submicron pattern formation. Ion beam induced, low conductivity as with resistivities of (4–4000) MΩ/☒ has been observed for more than 1×1015 ions/cm2 dose for a 0.65‐μm‐thick film. However, by heat treatment at 300 °C after low‐dose ion beam patterning, gold patterns with resistivity of 3×10−4 Ω cm, which is about 100 times the bulk gold value, are obtained.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.05.Bx Metals, semimetals, and alloys
85.40.Bh Computer-aided design of microcircuits; layout and modeling
73.61.Ng Insulators

SiFx and SFx molecular ion implantations into GaAs

Akiyoshi Tamura, Kaoru Inoue, Takeshi Onuma, and Minoru Sato

Appl. Phys. Lett. 51, 1503 (1987); http://dx.doi.org/10.1063/1.98616 (3 pages) | Cited 7 times

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We have investigated fundamental electrical characteristics of GaAs implanted with SiFx and SFx (x=1, 2, and 3) molecular ions at energies which give the same dopant atom (Si or S) ion ranges. Three kinds of annealing methods were compared. Characterization of these implanted GaAs layers was carried out by the Hall effect, capacitance‐voltage, and secondary ion mass spectrometry measurements.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Ey III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Thermal gas effusion from hydrogenated amorphous carbon films

Ch. Wild and P. Koidl

Appl. Phys. Lett. 51, 1506 (1987); http://dx.doi.org/10.1063/1.98617 (3 pages) | Cited 104 times

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Hydrogenated amorphous carbon (a‐C:H) films, deposited onto negatively biased substrates in a 13.56‐MHz hydrocarbon glow discharge system, have been investigated by mass spectroscopic thermal effusion measurements. Depending on the bias voltage UB as the most important deposition parameter, hydrocarbons and/or H2 molecules are desorbed at threshold temperatures between 300 and 600 °C. The threshold temperature increases with increasing bias voltage while the mass of the desorbed molecules decreases. a‐C:H films deposited at low bias release H2, CH4, and higher hydrocarbons whereas from hard a‐C:H films deposited at UB≳500 V, only H2 is released. Using double‐layer a‐C:H/a‐C:D films, it is shown that H2 and CH4 molecules are formed in the volume of the film followed by molecular diffusion through the a‐C:H network. For high‐bias voltages (UB≳500 V), the reduced pore size of the strongly crosslinked a‐C:H network is shown to prevent diffusion of hydrocarbon molecules, while the films are still permeable for hydrogen.
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68.60.Dv Thermal stability; thermal effects
66.30.Lw Diffusion of other defects
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging

1.3‐μm light‐emitting diode from silicon electron irradiated at its damage threshold

L. T. Canham, K. G. Barraclough, and D. J. Robbins

Appl. Phys. Lett. 51, 1509 (1987); http://dx.doi.org/10.1063/1.98618 (3 pages) | Cited 35 times

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We report 77‐K electroluminescence from an irradiated carbon‐rich silicon diode that has an internal quantum efficiency more than 103 times higher than that of band‐to‐band recombination in an unirradiated, but otherwise identical diode. This is achieved by creating optically active Cs‐SiI‐Cs complexes with room‐temperature electron bombardment at an energy between the displacement thresholds for single vacancy and divacancy formation. Under these irradiation conditions, it is possible to create a high concentration of radiative defects without gross degradation of the diode’s electrical characteristics. The technique could provide very large scale integration‐compatible silicon light‐emitting diodes for 1.3–1.6 μm all‐silicon integrated optics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
61.80.Fe Electron and positron radiation effects
85.30.De Semiconductor-device characterization, design, and modeling

Selective epitaxial growth of gallium arsenide by molecular beam epitaxy

A. Okamoto and K. Ohata

Appl. Phys. Lett. 51, 1512 (1987); http://dx.doi.org/10.1063/1.98619 (3 pages) | Cited 18 times

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GaAs was selectively grown on GaAs substrates patterned with SiO2 by conventional molecular beam epitaxy (MBE). No growth was found on SiO2, except for small GaAs particles, when the substrate temperature was above 700 °C under 1.2×10−5 Torr arsenic pressure. With the increase in the substrate temperature, the selectivity was better while the growth rate decreased. At 775 °C, no growth occurred, even on GaAs. Selective epitaxial growth of GaAs by MBE is promising for application to device fabrications.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Heteroepitaxial growth of CdTe on InSb by metalorganic chemical vapor deposition

O. Sugiura, Y. Tanaka, K. Shiina, and M. Matsumura

Appl. Phys. Lett. 51, 1515 (1987); http://dx.doi.org/10.1063/1.98620 (3 pages) | Cited 3 times

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Heteroepitaxial growth of CdTe on an InSb (111)B substrate has been investigated using the metalorganic chemical vapor deposition method under a total vapor pressure of about 1 Pa. By cracking diethyltellurium thermally at 670 °C, CdTe films were deposited in a wide substrate temperature range from 120 to 450 °C. Single‐crystal films grown at 250 °C showed a good surface morphology.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)

Narrow two‐dimensional electron gas channels in GaAs/AlGaAs sidewall interfaces by selective growth

Hiromitsu Asai, Syoji Yamada, and Takashi Fukui

Appl. Phys. Lett. 51, 1518 (1987); http://dx.doi.org/10.1063/1.98621 (3 pages) | Cited 22 times

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Narrow two‐dimensional electron gas (2DEG) channels have been fabricated for the first time on GaAs/Al0.3Ga0.7As sidewall interfaces by selective growth using metalorganic chemical vapor deposition (MOCVD). The 4‐μm‐wide 2DEG channels are formed on the {111}A facets by controlling the facet formation in the selective growth layers only through MOCVD growth conditions. The angular dependence of Shubnikov–de Haas oscillations has confirmed the existence of 2DEG on the {111}A facets.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Reduction of Hg1−xCdxTe native oxide during the SiNx deposition process

G. Sudo, N. Kajihara, Y. Miyamoto, and K. Tanikawa

Appl. Phys. Lett. 51, 1521 (1987); http://dx.doi.org/10.1063/1.98622 (3 pages) | Cited 2 times

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Electron cyclotron resonance plasma chemical vapor deposition enables low‐temperature SiNx deposition on Hg1−xCdxTe (MCT). The SiNx film has an excellent interface on MCT with a low surface state density of 1.0×1011 cm−2 eV−1 and a low fixed charge of −1.4×1011 cm−2. A detailed analysis by x‐ray photoelectron spectroscopy and Auger electron spectroscopy spectra of Te, Cd, and Si at the SiNx/MCT interface indicated that the SiNx deposition reduces the naturally grown MCT native oxide. The oxygen taken from Te oxidizes SiH4 and produces silicon oxides which remain in the SiNx film. Since a chemical shift caused by oxidized Cd at the fresh surface of MCT is very slight, intentionally oxidized samples were used to confirm the above reaction. The analysis of the shape of the Si(2p) peak at the interface indicated that the silicon oxides are composed of SiO and SiO2. Thermodynamic considerations support such a mechanism.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.35.Dv Composition, segregation; defects and impurities
73.20.At Surface states, band structure, electron density of states
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Characterization of short‐range leakage currents in undoped polycrystalline Si by means of capacitance‐voltage measurement

Y. Alpern and J. Shappir

Appl. Phys. Lett. 51, 1524 (1987); http://dx.doi.org/10.1063/1.98623 (3 pages) | Cited 1 time

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Metal‐oxide‐semiconductor capacitors with undoped polycrystalline Si (polysilicon) electrodes were studied and a model was developed to explain the voltage and frequency dependence of the capacitance and serial resistance. The model assumes random distribution of leaky paths in the polycrystalline Si layer which supply the charge to the polysilicon‐oxide interface.
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72.80.Cw Elemental semiconductors
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors

Thin films of amorphous MoO3 as a negative resist

P. K. Gupta and K. L. Chopra

Appl. Phys. Lett. 51, 1527 (1987); http://dx.doi.org/10.1063/1.98624 (3 pages) | Cited 1 time

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Lithographic properties of amorphous MoO3 films exposed to a glow discharge hydrogen plasma have been investigated. It has been observed that the etching rate of an exposed film in alkaline solution is lower compared to an unexposed one, giving rise to a negative tone behavior of the material. The etching characteristics as a function of exposure time and substrate temperature (during exposure) and their correlation with optical transmission have been studied. The contrast (γ) obtained is 4.2.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
52.40.Hf Plasma-material interactions; boundary layer effects
78.66.-w Optical properties of specific thin films

GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy

S. P. DenBaars, C. A. Beyler, A. Hariz, and P. D. Dapkus

Appl. Phys. Lett. 51, 1530 (1987); http://dx.doi.org/10.1063/1.98625 (3 pages) | Cited 29 times

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Atomic layer epitaxy (ALE) is a relatively new crystal growth technique which allows control of the growth process at the monolayer level through a self‐limiting, surface‐controlled growth mechanism. We report here the use of ALE to grow high‐quality GaAs/AlGaAs quantum wells and the first successful demonstration of an injection laser with a quantum well active region grown by ALE. Room‐temperature threshold current densities as low as 640 A/cm2 have been achieved in nonoptimized separate confinement structures.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Electron velocity and negative differential mobility in AlGaAs/GaAs modulation‐doped heterostructures

W. T. Masselink, N. Braslau, W. I. Wang, and S. L. Wright

Appl. Phys. Lett. 51, 1533 (1987); http://dx.doi.org/10.1063/1.98626 (3 pages) | Cited 20 times

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We have measured the electron velocity in low‐doped GaAs and in AlGaAs/GaAs modulation‐doped heterostructures at electric fields up to 8000 V/cm at both 300 and 77 K. In order to avoid the charge domain formation which occurs in dc measurements at these fields, this measurement uses 35 GHz radiation to supply the electric field. These measurements indicate that the peak velocity for electrons in the heterostructures is lower than for electrons in bulk low‐doped GaAs. This result is explained in terms of modified intervalley transfer, real space transfer, and an enhanced scattering with polar optical phonons.
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72.20.Ht High-field and nonlinear effects
73.50.Fq High-field and nonlinear effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.80.Ey III-V and II-VI semiconductors

In situ arsenic doping of epitaxial silicon at 800 °C by plasma enhanced chemical vapor deposition

James H. Comfort and Rafael Reif

Appl. Phys. Lett. 51, 1536 (1987); http://dx.doi.org/10.1063/1.98627 (3 pages) | Cited 12 times

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A comparison of in situ arsenic doping of epitaxial silicon films deposited at 800 °C by both very low pressure chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD) is presented. The growth rate and morphology of films deposited by CVD are degraded in the presence of arsine. PECVD growth rates are insensitive to arsine. Moreover, PECVD deposits show an order of magnitude increase in active dopant incorporation and exhibit superior morphology relative to CVD.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Inhibition of charge packet broadening in GaAs charge‐coupled devices

J. I. Song and E. R. Fossum

Appl. Phys. Lett. 51, 1539 (1987); http://dx.doi.org/10.1063/1.98628 (3 pages)

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Computer simulation of charge transport in GaAs resistive‐gate charge‐coupled devices is reported. The simulation has been performed for 10 μm finger spacings, doping concentrations in the range of 1×1016–1×1017 cm−3, effective channel thicknesses 0.1–1.0 μm, lateral applied fields 3–10 kV/cm, and charge packet sizes 5%–100% of full bucket capacity. Inhibition of charge packet broadening due to transferred electron effects has been observed. Charge transfer time of 99.9% charge transfer efficiency across the intermediate phase finger was investigated and found to decrease monotonically with increasing electric field despite the turnaround in average carrier velocity. This may be attributed to a combination of improved initial charge confinement and inhibition of charge packet broadening.
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85.30.De Semiconductor-device characterization, design, and modeling
72.20.Ht High-field and nonlinear effects
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.30.Tv Field effect devices

Integration of a resonant‐tunneling structure with a metal‐semiconductor field‐effect transistor

T. K. Woodward, T. C. McGill, H. F. Chung, and R. D. Burnham

Appl. Phys. Lett. 51, 1542 (1987); http://dx.doi.org/10.1063/1.98629 (3 pages) | Cited 22 times

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We report experimental realization of a three‐terminal negative differential resistance (NDR) device. The device consists of a GaAs‐AlxGa1−xAs double‐barrier tunneling heterostructure in series with a recessed‐gate metal‐semiconductor field‐effect transistor on a semi‐insulating substrate. Basic dc characteristics for three samples grown by metalorganic chemical vapor deposition are shown. All samples exhibit NDR at 77 K, with peak‐to‐valley current ratios between 2 and 7. Current densities at the peak of the NDR range from 0.5 to 380 A/cm2. The peak‐to‐valley current ratio and the voltage location of the NDR can be modulated with gate bias.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.30.Tv Field effect devices
73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Hg incorporation in CdTe during the growth of HgTe‐CdTe superlattices by molecular beam epitaxy

J. Reno, R. Sporken, Y. J. Kim, C. Hsu, and J. P. Faurie

Appl. Phys. Lett. 51, 1545 (1987); http://dx.doi.org/10.1063/1.98630 (3 pages) | Cited 14 times

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HgTe‐CdTe superlattices and other microstructures such as single and double barrier tunneling structures are commonly grown by molecular beam epitaxy with the mercury flux continuously on the sample during the growth. This means that some mercury will be incorporated in the CdTe layers. We present here, for the first time, a measurement of the amount of mercury incorporated in thin layers of CdTe. X‐ray photoelectron spectroscopy was used to measure the amount of mercury. The amount of mercury was found to be between 3 and 9% for CdTe (111)B, depending on the growth conditions. The amount of mercury was found to increase with mercury flux and to decrease as the substrate temperature was increased. Under the same conditions, it was found that much more mercury was incorporated in the (100) orientation. The type of substrate (CdTe or GaAs) was not found to influence the results. These results indicate that the amount of mercury in the CdTe layers of HgTe‐CdTe superlattices is not quite as low as expected from measurements of thick CdTe layers, but it can be low enough that it does not influence significantly the results on the superlattice system in the (111) orientation.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
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