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13 Jul 1987

Volume 51, Issue 2, pp. 63-147

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AlGaAs/GaAs distributed feedback lasers with first‐order grating fabricated by metalorganic chemical vapor deposition

Shoji Hirata, Koshi Tamamura, Yoshifumi Mori, and Chiaki Kojima

Appl. Phys. Lett. 51, 63 (1987); http://dx.doi.org/10.1063/1.98597 (3 pages) | Cited 2 times

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Distributed feedback AlGaAs/GaAs lasers with first‐order grating (1295 Å) were fabricated and successfully operated under continuous wave conditions at room temperature. A coupling coefficient of 115 cm−1 and a threshold current of 47 mA were obtained. A stable single‐mode oscillation was maintained up to 100 °C.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

High‐sensitivity laser probe for photothermal measurements

J. T. Fanton and G. S. Kino

Appl. Phys. Lett. 51, 66 (1987); http://dx.doi.org/10.1063/1.98598 (3 pages) | Cited 14 times

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A high‐sensitivity interferometric laser probe has been developed to detect thermally generated surface displacements. Shot‐noise‐limited detection has been achieved with the use of inexpensive semiconductor lasers.
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07.60.Ly Interferometers
07.20.-n Thermal instruments and apparatus
68.35.B- Structure of clean surfaces (and surface reconstruction)

High‐speed digital modulation of ultralow threshold (<1 mA) GaAs single quantum well lasers without bias

K. Y. Lau, N. Bar‐Chaim, P. L. Derry, and A. Yariv

Appl. Phys. Lett. 51, 69 (1987); http://dx.doi.org/10.1063/1.98599 (3 pages) | Cited 19 times

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GaAlAs buried heterostructure lasers with submilliampere threshold current fabricated from single quantum well wafers can be driven directly with logic level signals without any current bias. The switch‐on delay was measured to be <50 ps and no relaxation oscillation ringing was observed. These lasers permit fully on‐off multigigabit digital switching while at the same time obviating the need for bias monitoring and feedback control.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Localization of degradation in InP/InGaAsP mushroom stripe lasers

H. Jung and P. Marschall

Appl. Phys. Lett. 51, 72 (1987); http://dx.doi.org/10.1063/1.98600 (2 pages) | Cited 1 time

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The rapid degradation observed in InP/InGaAsP mushroom stripe lasers covered with phosphosilicate glass (PSG) was investigated by comparing the light‐current characteristics as a function of the preparation technique. We were able to show that the PSG‐covering layer is not the reason for the rapid degradation. By inspecting the light‐current characteristics before and after degradation and by additional underetching the laser structure after degradation we were able to localize the degraded regions on the open side walls of the InGaAsP active layer.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Self Bragg matched beam steering using the double color pumped photorefractive oscillator

Baruch Fischer and Shmuel Sternklar

Appl. Phys. Lett. 51, 74 (1987); http://dx.doi.org/10.1063/1.98601 (2 pages) | Cited 14 times

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A new method for steering light beams with automatic (self‐aligning) Bragg matching is presented. This device enables, in principle, a large beam deflection range which is not limited by the Bragg condition. It is based on a double color pumped photorefractive oscillator. Two input beams of different colors induce and pump a dynamic four‐wave mixing process in a photorefractive BaTiO3 crystal in which two other beams and a common grating are self‐generated. Steering is achieved by wavelength tuning of one of the pump beams. A deflection range of about 1.7°, with an efficiency ranging from 50 to 90%, is measured for a wavelength difference Δλ of ±30 nm for the two pumps (using argon ion laser lines). A deflection of 4.7° with an efficiency of 10% is seen for Δλ=144.8 nm (corresponding to pumps at 488 and 632.8 nm).
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42.79.Hp Optical processors, correlators, and modulators
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Jq Electro-optical effects

Efficient XeCl/H2 Raman shifting to a blue‐green region

Xusan Cheng, Qihong Lou, Runwen Wang, and Zhijiang Wang

Appl. Phys. Lett. 51, 76 (1987); http://dx.doi.org/10.1063/1.98602 (2 pages) | Cited 9 times

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90% photon conversion of 18 MW (1 J, 55 ns) power XeCl laser radiation to Raman Stokes beams is reported with 39% photon efficiency and ∼60% peak power conversion efficiency to the third Stokes order S3 (499 nm). Relaxation oscillations of higher order Si(i≥3) pulses have been observed.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering

Ultrahigh relaxation oscillation frequency (up to 30 GHz) of highly p‐doped GaAs/GaAlAs multiple quantum well lasers

K. Uomi, T. Mishima, and N. Chinone

Appl. Phys. Lett. 51, 78 (1987); http://dx.doi.org/10.1063/1.98603 (3 pages) | Cited 28 times

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We have demonstrated a relaxation oscillation frequency (fr) of up to 30 GHz in highly p‐doped (Be=1×1019 cm−3) GaAs/GaAlAs multiple quantum well (MQW) lasers grown by molecular beam epitaxy. This is the highest fr achieved at room temperature for III‐V semiconductor lasers. The high fr is attained by the large differential gain in the p‐doped MQW structure having a low threshold electron density resulted from the excess hole density in addition to the quantum size effect.
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42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Holographic interferometry using iron‐doped lithium niobate

R. Magnusson, J. H. Mitchell, T. D. Black, and D. R. Wilson

Appl. Phys. Lett. 51, 81 (1987); http://dx.doi.org/10.1063/1.98604 (2 pages) | Cited 3 times

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Holographic interferometry using crystals of iron‐doped lithium niobate is reported. The interferograms presented are produced via double‐exposure Fourier transform holography in heavily doped crystals without applied electric fields. Flow‐field visualization is used as an example application area.
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42.40.Kw Holographic interferometry; other holographic techniques
07.60.Ly Interferometers
42.40.My Applications
47.80.-v Instrumentation and measurement methods in fluid dynamics

GaAs traveling‐wave polarization electro‐optic waveguide modulator with bandwidth in excess of 20 GHz at 1.3 μm

S. Y. Wang, S. H. Lin, and Y. M. Houng

Appl. Phys. Lett. 51, 83 (1987); http://dx.doi.org/10.1063/1.98982 (3 pages) | Cited 24 times

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We report a 1.3‐μm GaAs traveling‐wave electro‐optic waveguide modulator with a 3‐dB optical bandwidth in excess of 20 GHz. The bandwidth was determined by directly detecting the modulated optical signal with a high‐speed InP/GaInAs photodiode. The modulator has a coplanar strip electrode configuration with a double heterojunction Al0.032Ga0.968As/GaAs/Al0.032Ga0.968As optical guide grown by low‐pressure organometallic vapor phase epitaxy.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
42.81.Wg Other fiber-optical devices

Nonlinear spectroscopy in In0.53Ga0.47As/InP multiple quantum wells

K. Tai, J. Hegarty, and W. T. Tsang

Appl. Phys. Lett. 51, 86 (1987); http://dx.doi.org/10.1063/1.98605 (3 pages) | Cited 24 times

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Near‐band‐gap optical nonlinearity in In0.53Ga0.47As/InP multiple quantum well (MQW) structures is studied by a combination of nonlinear absorption, pump‐and‐probe, and forward degenerate four‐wave mixing experiments. Near complete saturation of the n=1 heavy‐hole exciton is observed for the first time in In0.53Ga0.47As/InP MQW structures. Nonlinear susceptibility χ(3) is found to be 0.08 esu, which is about the same as that for GaAs/GaAlAs MQW structures. Saturation intensity is 200 W/cm2.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.-e Optical properties of bulk materials and thin films
77.22.Ch Permittivity (dielectric function)

Degradation of GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates

J. P. van der Ziel, R. D. Dupuis, R. A. Logan, and C. J. Pinzone

Appl. Phys. Lett. 51, 89 (1987); http://dx.doi.org/10.1063/1.98997 (3 pages) | Cited 44 times

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Using pulsed current excitation we have studied the rapid degradation of the laser properties of low‐threshold‐graded refractive‐index single quantum well GaAs lasers grown by metalorganic vapor deposition on Si substrates. The degradation results from the growth of nonradiative regions in the active layer, resulting in rapid increase in threshold with time. The stimulated emission is quenched ∼1–5 μs after the start of the current pulse preventing continuous operation at 300 K. The degradation process is similar to that observed in similar lasers grown on GaAs substrates and occurs very rapidly due to the presence of a high density of defects and thermally induced strain.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Relation between chirp and linewidth reduction in external Bragg reflector semiconductor lasers

N. A. Olsson, C. H. Henry, R. F. Kazarinov, H. J. Lee, and B. H. Johnson

Appl. Phys. Lett. 51, 92 (1987); http://dx.doi.org/10.1063/1.98606 (2 pages) | Cited 2 times

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A 1.5‐μm single longitudinal mode semiconductor laser, formed by butt coupling an external Bragg reflector to a standard Fabry–Perot laser, is shown to have greatly reduced wavelength chirp and emission linewidth. The linewidth reduction is found to be proportional to the square of the chirp reduction, in agreement with a previous theoretical prediction. The linewidth and chirp reduction factor can be varied by changing the operating point of the laser. With a 3‐mm‐long Bragg reflector, a linewidth of 1 MHz at 5 mW has been achieved.
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42.60.Fc Modulation, tuning, and mode locking
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

GaAs‐AlAs monolithic microresonator arrays

J. L. Jewell, A. Scherer, S. L. McCall, A. C. Gossard, and J. H. English

Appl. Phys. Lett. 51, 94 (1987); http://dx.doi.org/10.1063/1.98607 (3 pages) | Cited 68 times

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Monolithic optical logic devices 1.5–5 μm across are defined by ion‐beam assisted etching through a GaAs/AlAs Fabry–Perot structure grown by molecular beam epitaxy. They show reduced energy requirements (more than an order of magnitude smaller than the unetched heterostructure), uniform response over small arrays, negligible crosstalk at 3 μm center‐center spacing, ∼150 ps recovery time, and thermal stability at 82 MHz operating frequency. All experiments were performed at room temperature.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Plastic flow of borosilicate glass under bombardment with heavy ions

S. Klaumünzer, Changlin Li, and G. Schumacher

Appl. Phys. Lett. 51, 97 (1987); http://dx.doi.org/10.1063/1.98608 (3 pages) | Cited 14 times

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Irradiation of borosilicate glass at temperatures between 80 and 150 K with a beam of 129Xe ions of 360 MeV produces macroscopically visible plastic flow without any cracks. With respect to this effect the brittle borosilicate glass behaves in the same way as ductile metallic glasses. Even the quantitative details are surprisingly comparable. It is suggested that ion‐beam‐induced plastic flow will occur virtually in every amorphous material.
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61.80.Jh Ion radiation effects
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
61.43.Fs Glasses
61.43.-j Disordered solids

Compositional analysis of the rhodium metal‐oxide interface by imaging atom‐probe mass spectroscopy

G. L. Kellogg

Appl. Phys. Lett. 51, 100 (1987); http://dx.doi.org/10.1063/1.98636 (3 pages) | Cited 4 times

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The chemical composition of a thin rhodium oxide from the surface through the metal‐oxide interface has been measured by imaging atom‐probe mass spectroscopy. The surface oxide was produced by heating a clean, well‐characterized field‐emitter surface to 600 K in 1 Torr O2 for 15 min. The oxidized sample was subsequently transferred under ultrahigh vacuum to an imaging atom probe for analysis. To avoid problems associated with a nonuniform oxide layer, only a small volume of the oxide layer was mass analyzed. The results indicated that under these conditions 50–60 layers of stoichiometric Rh2O3 are produced with dissolved oxygen (possibly mixed with substoichiometric oxides) extending an additional 5–15 layers into the bulk. A small amount of H2O was detected within the oxide with an enhanced concentration observed at the interface.
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68.55.Nq Composition and phase identification
68.35.Dv Composition, segregation; defects and impurities
81.05.Bx Metals, semimetals, and alloys
07.75.+h Mass spectrometers

Enhanced Cu‐Teflon adhesion by presputtering prior to the Cu deposition

Chin‐An Chang, J. E. E. Baglin, A. G. Schrott, and K. C. Lin

Appl. Phys. Lett. 51, 103 (1987); http://dx.doi.org/10.1063/1.98637 (3 pages) | Cited 56 times

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Adhesion of Cu to Teflon has been studied by depositing Cu to Teflon with and without a presputtering prior to the Cu deposition. Without presputtering, a weak adhesion is observed, with a value of 1 g/mm, which fails the scotch tape test. With a presputtering using 500 eV Ar+ ions, the adhesion rapidly increases, becoming evident after a sputtering of 10 s, and reaches maximal increases of 50 times at longer sputtering times. All the Cu films deposited after presputtering show strong adhesion, and can only be removed by forceful scratching with sharp tools. The presputtering was shown to change both the surface morphology of Teflon, with the deposited Cu following the morphologies created, and the interface chemical bonding between Cu and Teflon as revealed by x‐ray photoelectron spectroscopy. Exposure of the presputtered Teflon to air prior to the Cu deposition shows no effect on the strong adhesion obtained. An interface bonding model is suggested for the enhanced adhesion observed.
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68.35.Gy Mechanical properties; surface strains
68.35.B- Structure of clean surfaces (and surface reconstruction)
62.20.Qp Friction, tribology, and hardness
81.40.Pq Friction, lubrication, and wear

Spectral photoconductivity in n‐modulation‐doped GaAs/AlGaAs quantum well structures

R. A. Höpfel

Appl. Phys. Lett. 51, 106 (1987); http://dx.doi.org/10.1063/1.98638 (3 pages) | Cited 12 times

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The in‐plane photoconductivity of n‐modulation‐doped quantum well structures of GaAs/AlGaAs is experimentally studied as a function of the incident photon energy. Negative photoconductivity with surprising dependences on background illumination, temperature, and electric field is observed for photon energies slightly below the band gap of GaAs. The effect may be due to optical filling of ionized deep donors in AlGaAs as well as to an optical backgating effect. High positive photoconductivity is present above the band gaps—in contrast to theoretical expectations from previous optical transport experiments.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.At Surface states, band structure, electron density of states
72.40.+w Photoconduction and photovoltaic effects

Scan speed effects on enhanced disordering of GaAs‐AlGaAs superlattices by focused Si ion beam implantation

Koji Ishida, Kazunori Matsui, Toshiaki Fukunaga, Junji Kobayashi, Tetsuo Morita, Eizo Miyauchi, and Hisao Nakashima

Appl. Phys. Lett. 51, 109 (1987); http://dx.doi.org/10.1063/1.98639 (3 pages) | Cited 10 times

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We studied compositional disordering of GaAs‐AlGaAs superlattices induced by focused Si ion beam implantation and subsequent annealing with different doses and scan speeds by secondary ion mass spectrometry and Rutherford backscattering spectrometry. The results indicate that the Al‐Ga intermixing is enhanced by substitutional exchange of Si‐Si pairs with vacancies as in the case of the unfocused implantation. However, with a slow scan implantation, it is confirmed that the implantation‐induced defects suppress the Si diffusion and consequently Al‐Ga interdiffusion.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.80.Jh Ion radiation effects
68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers

Low‐temperature annealing characteristics of the lightly arsenic‐doped polycrystalline silicon

Chaosu Yang

Appl. Phys. Lett. 51, 112 (1987); http://dx.doi.org/10.1063/1.98640 (3 pages) | Cited 2 times

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Low‐temperature annealing characteristics of the lightly arsenic‐doped polycrystalline silicon have been studied. It was found that, when the silicon dioxide layer covered on the polycrystalline silicon was moved after high‐temperature processing and the polycrystalline silicon was annealed at low temperature, the conductance of the films would increase from one to four orders in magnitude. A possible mechanism for the interaction of the free oxygen in SiO2 with grain boundary is discussed.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Model for bulk effects on Si interstitial diffusivity in silicon

P. B. Griffin, S. T. Ahn, W. A. Tiller, and J. D. Plummer

Appl. Phys. Lett. 51, 115 (1987); http://dx.doi.org/10.1063/1.98996 (3 pages) | Cited 31 times

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Literature values for the diffusivity of the silicon interstitial or interstitialcy, I, range over several orders of magnitude and have activation energies between 1 and 4 eV. We propose a model for bulk trapping effects on the I diffusivity which provides a consistent explanation for the observed discrepancies. It reconciles the effects of different materials (float‐zone, Czochralski, and epitaxial silicon) and processes (diffusion and gettering) on the apparent value of the I diffusivity. New experimental results which directly indicate substantial bulk effects in different types of silicon support the validity of the model.
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66.30.Lw Diffusion of other defects
66.30.J- Diffusion of impurities
61.72.jd Vacancies
61.72.jj Interstitials
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Use of angle‐dependent photoemission for atom profiling: Au on compound semiconductors

Yoram Shapira, F. Xu, D. M. Hill, and J. H. Weaver

Appl. Phys. Lett. 51, 118 (1987); http://dx.doi.org/10.1063/1.98587 (3 pages) | Cited 4 times

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We present studies of Au film formation on the III‐V compound semiconductors GaAs and InSb based on polar‐angle‐dependent x‐ray photoelectron spectroscopy. The results highlight the power of this technique as a nondestructive tool for atom profiling. The Au overlayer is highly heterogeneous due to disruption of the original surface and significant anion segregation in Au. Although GaAs and InSb show common behavior, significant differences are observed because the anion–cation bond strength determines the extent of the surface disruption and semiconductor atom solid solubilities in Au dominate the segregation patterns in each system. We present a model of the overlayer structure, based on thermodynamic considerations, which shows very good quantitative agreement with the observed profiles.
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68.35.Fx Diffusion; interface formation
68.35.Dv Composition, segregation; defects and impurities
68.55.-a Thin film structure and morphology
79.60.Jv Interfaces; heterostructures; nanostructures

AlGaAs/GaAs double barrier diodes with high peak‐to‐valley current ratio

C. I. Huang, M. J. Paulus, C. A. Bozada, S. C. Dudley, K. R. Evans, C. E. Stutz, R. L. Jones, and M. E. Cheney

Appl. Phys. Lett. 51, 121 (1987); http://dx.doi.org/10.1063/1.98588 (3 pages) | Cited 50 times

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We report the largest peak‐to‐valley current (PVC) ratios to date from AlGaAs/GaAs double barrier (either alloy barrier or superlattice barrier) diodes. PVC ratios as high as 3.6 and 21.7 were obtained from an AlAs/GaAs superlattice barrier structure at 300 and 77 K, respectively. In an alloy barrier structure with x=0.42 (x=0.3), PVC ratios of 3.9 (2.2) and 14.3 (7.0) were observed at 300 and 77 K, respectively. We attribute these excellent results to a ‘‘two‐step’’ spacer layer incorporated in the devices studied which facilitated the growth of high material quality.
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85.30.Hi Surface barrier, boundary, and point contact devices
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Analysis of screening effects on interband Auger processes in GaSb

David Yevick and Witold Bardyszewski

Appl. Phys. Lett. 51, 124 (1987); http://dx.doi.org/10.1063/1.98589 (3 pages) | Cited 8 times

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We analyze the dependence of the Auger coefficient of GaSb on the assumed inverse screening length λ. We demonstrate that current experimental values can only be reproduced if λ≂0. We also derive this result theoretically with a general nonequilibrium Green’s function technique and provide a simple intuitive justification. Our accompanying numerical calculations are based on a Monte Carlo integration procedure which enables us to avoid approximations to the Kane‐model overlap matrix elements and to Fermi and phase‐space factors.
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79.20.Fv Electron impact: Auger emission
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
32.80.Hd Auger effect (including Coster-Krönig transitions)

Elastic strains in CdTe‐GaAs heterostructures grown by metalorganic chemical vapor deposition

D. J. Olego, J. Petruzzello, S. K. Ghandhi, N. R. Taskar, and I. B. Bhat

Appl. Phys. Lett. 51, 127 (1987); http://dx.doi.org/10.1063/1.98590 (3 pages) | Cited 38 times

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The elastic response associated with the lattice mismatch in (100)CdTe∥(100)GaAs heterostructures was investigated by performing photoluminescence measurements as a function of CdTe layer thicknesses. The heterostructures were grown by metalorganic chemical vapor deposition. Estimates of strains, stresses, and lattice constants were obtained from shifts in near‐band‐edge photoluminescence features. Biaxial compressive strains are present in CdTe layers thinner than 1 μm. The magnitudes of the strains are larger than those expected from equilibrium models and from transmission electron microscopy results. With increasing CdTe layer thicknesses above 0.1 μm biaxial tensile strains affect the GaAs surfaces.
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68.35.Gy Mechanical properties; surface strains
78.55.Hx Other solid inorganic materials
68.60.Bs Mechanical and acoustical properties
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Defect structures at the GaAs/Si interface after annealing

H. L. Tsai and J. W. Lee

Appl. Phys. Lett. 51, 130 (1987); http://dx.doi.org/10.1063/1.98591 (3 pages) | Cited 41 times

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High‐resolution electron microscopy was applied to investigate the effect of post‐annealing on the defect structure at the GaAs/Si interface. This study indicates that annealing results in dislocation rearrangement at the interface to form the majority of Lomer’s dislocations with their Burgers vectors parallel to the interface. Dislocations with inclined Burgers vectors (type 2) at the interface after annealing are often observed at steps introduced by the substrate surface roughness. This observation is discussed in terms of the shrinking of stacking faults and microtwins and the preferential nucleation of both stacking faults (or microtwins) and type 2 dislocations at surface steps.
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68.35.Dv Composition, segregation; defects and impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
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