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16 Nov 1987

Volume 51, Issue 20, pp. 1569-1646

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Dynamic sensitivity and thermal noise analysis of a magnetoelastic amorphous metal low‐frequency magnetometer

M. D. Mermelstein and A. Dandridge

Appl. Phys. Lett. 51, 1640 (1987); http://dx.doi.org/10.1063/1.98581 (3 pages) | Cited 3 times

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The ferromagnetic susceptibility of a magnetoelastic amorphous metal ribbon is determined from the coupled equations of motion for the magnetization and strain modes. This analysis is used to calculate the dynamic sensitivity and field equivalent noise floor of a metallic glass low‐frequency magnetometer. Two principal noise sources are considered: the thermally induced magnetization fluctuations and the Johnson noise of the pick‐up coil. The magnetometer exhibits a calculated minimum detectable field of ∼0.1 pT/(Hz)1/2 for room temperature operation at a resonance frequency of 22 kHz and 103 turn pick‐up coil having a 200‐Ω resistance. The fundamental material limit is estimated to be ∼5 fT/(Hz)1/2.
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75.30.Cr Saturation moments and magnetic susceptibilities
75.50.Bb Fe and its alloys
07.55.-w Magnetic instruments and components
75.50.Kj Amorphous and quasicrystalline magnetic materials

Comparison of interface positive charge generated in metal‐oxide‐silicon devices by high‐field electron injection and x‐ray irradiation

D. B. Mott and S. P. Buchner

Appl. Phys. Lett. 51, 1643 (1987); http://dx.doi.org/10.1063/1.98582 (2 pages)

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Interface positive charge induced in thin oxides (582 Å thick) of metal‐oxide‐silicon devices by Fowler–Nordheim injection and x‐ray irradiation was evaluated based on measurements of room‐temperature annealing characteristics. Results showed that in the low‐dose regime, the dose dependence of the density and distribution of the positive charge was different for the two forms of stress. However, at higher doses, the positive charge density produced by both methods increased monotonically while its spatial extent decreased and became more localized at the interface. These latter results are attributed to a buildup of negative charge in the oxide that neutralizes the positive charge furthest from the interface, whereas the differences at low dose are due either to the different character of the positive charge generated by the two techniques or to the much smaller electron density present during irradiation than injection.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
85.30.Hi Surface barrier, boundary, and point contact devices
61.80.Cb X-ray effects
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Comment on ‘‘Nonlinear coupling of waveguide modes’’ [Appl. Phys. Lett. 50, 801 (1987)]

A. Vatarescu

Appl. Phys. Lett. 51, 1645 (1987); http://dx.doi.org/10.1063/1.98583 (1 page) | Cited 2 times

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Abstract Unavailable
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42.81.Bm Fabrication, cladding, and splicing
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Response to ‘‘Comment on ‘Nonlinear coupling of waveguide modes’ ’’ [Appl. Phys. Lett. 51, 1645 (1987)]

Yaron Silberberg and George I. Stegeman

Appl. Phys. Lett. 51, 1645 (1987); http://dx.doi.org/10.1063/1.98584 (1 page)

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Abstract Unavailable
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42.81.Bm Fabrication, cladding, and splicing
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Comment on ‘‘Exact analytical solution to diffusion equation for ion‐implanted dopant profile evolution during annealing’’ [Appl. Phys. Lett. 50, 155 (1987)]

J. R. King

Appl. Phys. Lett. 51, 1646 (1987); http://dx.doi.org/10.1063/1.98585 (1 page)

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Abstract Unavailable
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66.30.J- Diffusion of impurities
61.72.Bb Theories and models of crystal defects
61.72.U- Doping and impurity implantation
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