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23 Nov 1987

Volume 51, Issue 21, pp. 1655-1756

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Surface‐emitting laser diode with vertical GaAs/GaAlAs quarter‐wavelength multilayers and lateral buried heterostructure

Mutsuo Ogura, Wei Hsin, Ming‐Chiang Wu, Shyh Wang, John R. Whinnery, S. C. Wang, and Jane J. Yang

Appl. Phys. Lett. 51, 1655 (1987); http://dx.doi.org/10.1063/1.98586 (3 pages) | Cited 22 times

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Threshold current of 2 mA at room temperature cw operation is realized in a vertical distributed feedback surface‐emitting laser diode with lateral buried heterostructure (LBH). In this LBH structure, the vertical distributed feedback active region (AlGaAs/GaAs multilayer) is entirely surrounded with n‐ and p‐type AlGaAs cladding layers for minority‐carrier confinement. The far‐field angle is 7°. The beam shape is nearly circular. However, the lasing spectrum is broad (2–3 nm) compared with the conventional edge‐emitting laser. Major differences between the surface‐emitting laser diode presented here and the conventional edge‐emitting laser diode are discussed.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

High‐power (1.4 W) AlGaInP graded‐index separate confinement heterostructure visible (λ∼658 nm) laser

D. P. Bour and J. R. Shealy

Appl. Phys. Lett. 51, 1658 (1987); http://dx.doi.org/10.1063/1.98534 (3 pages) | Cited 18 times

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Pulsed operation of an AlGaInP graded‐index separate confinement heterostructure laser grown by organometallic vapor phase epitaxy is reported. The laser active region consists of a single 100 Å Ga0.5In0.5P quantum well and 1600 Å graded index regions on both sides of the well. The graded index regions were produced by lattice‐matched graded composition (AlyGa1−y)0.5In0.5P quaternary alloys. This structure reduces the broad‐area threshold current compared to a double heterostructure laser, with pulsed thresholds as low as 1050 A/cm2. Total pulsed power of 1.4 W at 658 nm is available from an 80 μm×300 μm mesa‐stripe laser. A differential quantum efficiency of ∼56% is measured. By examining the cavity length dependence of the threshold current density and quantum efficiency, it is apparent that the quantum well gain has not saturated in these structures. This suggests that devices containing a thinner single quantum well active region may result in a further reduction in threshold current density for visible lasers.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Bright white‐light electroluminescence based on nonradiative energy transfer in Ce‐ and Eu‐doped SrS thin films

Shosaku Tanaka, Hideki Yoshiyama, Junichi Nishiura, Shozo Ohshio, Hiroyuki Kawakami, and Hiroshi Kobayashi

Appl. Phys. Lett. 51, 1661 (1987); http://dx.doi.org/10.1063/1.98535 (3 pages) | Cited 12 times

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A bright white‐light electroluminescence (EL) is obtained in a thin‐film EL device with Ce‐ and Eu‐doped SrS phosphors. The device shows a luminance level of 1500 cd/m2 with 5 kHz drive (500 cd/m2 at 1 kHz). The dominant excitation process of the Eu2+ centers is found to be due to an efficient nonradiative energy transfer from the Ce3+ to the Eu2+ centers.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Dual‐wavelength emission from a twin‐stripe single quantum well laser

Yasunori Tokuda, Yuji Abe, Teruhito Matsui, Noriaki Tsukada, and Takashi Nakayama

Appl. Phys. Lett. 51, 1664 (1987); http://dx.doi.org/10.1063/1.98536 (3 pages) | Cited 5 times

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We demonstrate a dual‐wavelength laser constructed from a single quantum well structure. The device includes twin‐stripe waveguides which differ in width. The two constituent emitters in the device of appropriate cavity lengths operate at widely different wavelengths, which are based on the lowest (n=1) and the second (n=2) quantized state transitions. Lasing behavior is interpreted in terms of the difference of the internal cavity loss of the waveguides.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Gn Optical waveguides and couplers
78.45.+h Stimulated emission

GaAlAs gain‐guided semiconductor lasers with a curved facet

S. Yamashita, S. Nakatsuka, T. Tanaka, Y. Ono, N. Chinone, and T. Kajimura

Appl. Phys. Lett. 51, 1667 (1987); http://dx.doi.org/10.1063/1.98537 (3 pages)

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GaAlAs gain‐guided semiconductor lasers having a curved facet are fabricated by employing reactive ion beam etching. The use of the curved facet permits stabilization of transverse mode in the direction parallel to the junction plane, reduction of astigmatism, and multilongitudinal mode oscillation.
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42.60.Fc Modulation, tuning, and mode locking
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Possibility of optical bistability due to resonant intersubband excitation in stepped modulation‐doped quantum wells

D. J. Newson and A. Kurobe

Appl. Phys. Lett. 51, 1670 (1987); http://dx.doi.org/10.1063/1.98538 (3 pages) | Cited 15 times

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We propose the use of a novel doped, stepped semiconductor quantum well structure as an optical nonlinear element. The large nonlinearity results from the change of many‐body effects on resonant excitation of electrons from the ground to the first excited subband. Self‐consistent calculations showed that the intersubband energy separation can be increased by up to 7 meV on intense illumination, compared to 1 meV for a conventional, square quantum well. We estimate that optical switching at powers below 1 W are feasible in an optimized structure, with switching times of about 1 ps.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.10.-w Theories and models of many-electron systems

Microscopic origin of light‐induced changes in hydrogenated amorphous silicon

Jin Jang, Chang Geun Lee, Seung Chul Park, and Choochon Lee

Appl. Phys. Lett. 51, 1673 (1987); http://dx.doi.org/10.1063/1.98539 (3 pages) | Cited 7 times

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Light‐induced changes in the stretching mode absorption of Si‐H and Si‐H2 have been studied for hydrogenated amorphous silicon (a‐Si:H) films. The absorption below 2000 cm−1 decreases greatly, but a small change has been observed above 2100 cm−1. The magnitude of the overall change increases as the substrate temperature is lowered and little change is observed for a‐Si:H films deposited at above 200 °C. The change in boron‐doped a‐Si:H is small compared with the undoped film deposited at the same substrate temperature. Based on experimental results, it is suggested that the hydrogen in the bulk of a‐Si:H diffuses to the microvoids during light illumination.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
63.20.-e Phonons in crystal lattices
66.30.J- Diffusion of impurities

Diffraction effects in a diode array traveling‐wave amplifier

John R. Andrews, T. L. Paoli, and R. D. Burnham

Appl. Phys. Lett. 51, 1676 (1987); http://dx.doi.org/10.1063/1.98540 (3 pages) | Cited 5 times

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The far‐field pattern of a traveling‐wave amplifier made from a gain‐guided laser diode array consists of a nearly diffraction‐limited principal lobe with one or two side lobes when injected with a plane wave from a single‐mode diode laser. The observed patterns for varying angle of incidence and amplifier pump current are consistent with a model that treats the array as a diffracting aperture containing a complex volume grating having an amplitude that depends on the current. Some internal parameters of the array are extracted and the implications to broad area amplifiers and laser arrays are discussed.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Hp Optical processors, correlators, and modulators

Nonlinear effects in coplanar GaAs/InGaAs strained‐layer superlattice directional couplers

Utpal Das, Yi Chen, and Pallab Bhattacharya

Appl. Phys. Lett. 51, 1679 (1987); http://dx.doi.org/10.1063/1.98541 (3 pages) | Cited 9 times

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We report on the performance characteristics of InGaAs/GaAs strained‐layer superlattice coplanar ridge‐type directional couplers realized by molecular beam epitaxy. The measured power transfer characteristics with 1.15 μm incident photoexcitation demonstrate nonlinear coupling due to absorption associated with the tails of the excitonic resonances in the quantum wells. From a theoretical fit of the measured data, the nonlinear refractive index coefficient, n2, of the multiquantum well is found to be 2.25×10−7 cm2/W. This agrees very well with a value of n2=1.9×10−7 cm2/W obtained independently on the same material from interferometric measurements.
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42.79.Gn Optical waveguides and couplers
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Efficient degenerate four‐wave mixing in an ion‐exchanged semiconductor‐doped glass waveguide

A. Gabel, K. W. DeLong, C. T. Seaton, and G. I. Stegeman

Appl. Phys. Lett. 51, 1682 (1987); http://dx.doi.org/10.1063/1.98542 (3 pages) | Cited 21 times

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We report the first observation of efficient degenerate four‐wave mixing in a planar waveguide. Four‐wave mixing reflectivities near one percent were seen inside a single mode waveguide fabricated by ion exchange in a sample of semiconductor‐doped glass.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics

Determining height of a leaky Schottky barrier existing in the junction between SnO2 and a highly doped p‐type amorphous SiC by using the pulsed laser‐induced transient photopotential technique

Kiminori Itoh, Hidetoshi Matsumoto, Tsuyoshi Kobata, Akira Fujishima, Osamu Nakamura, and Keitaro Fukui

Appl. Phys. Lett. 51, 1685 (1987); http://dx.doi.org/10.1063/1.98543 (2 pages) | Cited 9 times

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The junction between SnO2 and a highly doped p‐type amorphous SiC [a‐SiC(p+)] is very important as a transparent contact to an a‐Si alloy based solar cell. An energy‐band diagram for this junction has been obtained here for the first time. A thin film of a‐SiC(p+) deposited onto a SnO2‐coated glass was immersed into a nonaqueous electrolyte solution and was irradiated with N2 laser pulses. The photopotential was monitored against a Ag reference electrode. The photopotential thus obtained showed that a leaky Schottky barrier exists at the SnO2/a‐SiC(p+) junction. A band diagram was estimated, using an asymptotic value of the photopotential together with a position of the Fermi level calculated on the basis of the dark conductivity data.
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73.30.+y Surface double layers, Schottky barriers, and work functions
84.60.Jt Photoelectric conversion
73.40.-c Electronic transport in interface structures

Differential amplitude contrast in acoustic microscopy

M. Nikoonahad

Appl. Phys. Lett. 51, 1687 (1987); http://dx.doi.org/10.1063/1.98544 (3 pages)

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A differential amplitude contrast scanning acoustic microscope is described. The operation of this system resides on a two‐beam acoustic lens which produces two adjacent spots at its focal plane. The signals received from these two foci are first amplitude demodulated and then electronically subtracted from each other, resulting in a differential amplitude imaging signal. Experiments at 10 MHz are described and illustrated by a number of images.
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43.58.Ls Acoustical lenses and microscopes
43.60.Qv Signal processing instrumentation, integrated systems, smart transducers, devices and architectures, displays and interfaces for acoustic systems

X‐ray photoemission study of the Te‐precursor surfaces and the initial stages of growth of ZnTe on GaAs (100)

S. Tatarenko, K. Saminadayar, and J. Cibert

Appl. Phys. Lett. 51, 1690 (1987); http://dx.doi.org/10.1063/1.98545 (3 pages) | Cited 6 times

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The initial stages of epitaxial growth of ZnTe on GaAs (100) have been studied by x‐ray photoemission spectroscopy. The two surface structures (6×1 and (3)1/2×3 ) resulting from the adsorption of Te on GaAs (100) were used as precursor for ZnTe growth. Each of these structures is characterized by two different adsorbed Te states. For the 6×1 structure, the two states are assigned to As–Te–As and tentatively to Te–Te–Te bonds; and for the (3)1/2×3 structure, the assigned bonds are As–Te–As and GaGa Te–As. Growth of ZnTe (100) does not induce any change in the bonds associated with the 6×1 structure but modifies that associated with the (3)1/2×3 surface.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)

Maximum thickness of amorphous NiZr interlayers formed by a solid‐state reaction technique

W. J. Meng, C. W. Nieh, and W. L. Johnson

Appl. Phys. Lett. 51, 1693 (1987); http://dx.doi.org/10.1063/1.98546 (3 pages) | Cited 53 times

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Formation of the equilibrium intermetallic compound NiZr in sputter deposited Ni/Zr diffusion couples is suppressed by the formation of a metastable amorphous NiZr alloy until a critical thickness of the amorphous NiZr interlayer is reached. The temperature dependence of this critical thickness is studied experimentally. A phenomenological model based on the premise of interfacial heterogeneous nucleation is proposed to understand the evolution of Ni/Zr diffusion couples.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Identification of the titanium‐related levels in GaP

P. Roura, G. Bremond, A. Nouailhat, G. Guillot, and W. Ulrici

Appl. Phys. Lett. 51, 1696 (1987); http://dx.doi.org/10.1063/1.98547 (3 pages) | Cited 12 times

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Deep level transient spectroscopy, deep level optical spectroscopy, and optical absorption experiments were carried out in n‐ and p‐type Ti‐doped GaP crystals grown by the liquid encapsulated Czochralski technique. The single acceptor level of substitutional titanium Ti3+/Ti2+ was identified by deep level transient spectroscopy at an energy of 0.50±0.02 eV from the conduction band. The Ti2+ intracenter transitions were detected by deep level optical spectroscopy and optical absorption about 0.63 and 1.03 eV. The Ti4+/Ti3+ donor level was found at about 1±0.2 eV from the top of the valence band. The position of these two levels is found in complete agreement with the position of titanium‐related levels in GaAs and in InP.
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71.55.Eq III-V semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects

Generalized model of the isothermal vapor phase epitaxy of (Hg,Cd)Te

Zoran Djuric and Jozef Piotrowsky

Appl. Phys. Lett. 51, 1699 (1987); http://dx.doi.org/10.1063/1.98548 (3 pages) | Cited 12 times

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A generalized model of the isothermal vapor phase epitaxy of (Hg,Cd)Te is presented, which for the first time enables us to predict the compositional profiles of the layers in dependence on growth parameters (temperature and time of deposition, mercury and inert gas partial pressures in the growth chamber, source to substrate spacing). The model can be applied to both closed and opened tube isothermal vapor phase epitaxy of (Hg,Cd)Te, and it explains quantitatively all the peculiarities of the epitaxial growth using this method. The model is confronted with experimental data, which correspond satisfactorily to the calculations without any fitting parameters.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Nq Composition and phase identification

Charge trapping in thin nitrided SiO2 films

Maurizio Severi and Maurizio Impronta

Appl. Phys. Lett. 51, 1702 (1987); http://dx.doi.org/10.1063/1.98549 (3 pages) | Cited 11 times

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Electron avalanche injection has been used to study electron trapping and positive charge generation in thin (10–30 nm) ammonia‐annealed silicon dioxide films as a function of process conditions. It is found that the electron traps induced by nitridation are characterized by a capture cross section of ∼10−16 cm2 and by a density which increases with nitridation temperature and time. These results suggest that the traps are due to the nitrogen itself at oxygen sites. Even though electron traps in conventional oxides enhance the positive charge generation rate, the turn‐around effect in nitrided oxides is greatly reduced or completely eliminated under severe nitridation conditions. The process dependence of the turn‐around effect suggests that the nitrogen near the interface is mainly responsible for this effect.
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73.61.Ng Insulators
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy on 0.5°‐misoriented (111)B substrates

T. Hayakawa, M. Kondo, T. Morita, K. Takahashi, T. Suyama, S. Yamamoto, and T. Hijikata

Appl. Phys. Lett. 51, 1705 (1987); http://dx.doi.org/10.1063/1.98550 (3 pages) | Cited 15 times

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The interface disorder in quantum wells (QW’s) grown by molecular beam epitaxy on 0.5°‐misoriented (111)B GaAs substrates was characterized by low‐temperature photoluminescence and by transmission electron microscopy. It was found that the abruptness of the heterointerface of (111)B QW’s is as sharp as that of (100) QW’s. The effect of growth interruption at a high substrate temperature of 720 °C on the interface disorder was also studied and was found to be detrimental.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.55.Cr III-V semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Ballistic peaks in the distribution function from intervalley transfer in a submicron structure

Harold U. Baranger, Jean‐Luc Pelouard, Jean‐François Pône, and René Castagné

Appl. Phys. Lett. 51, 1708 (1987); http://dx.doi.org/10.1063/1.98551 (3 pages) | Cited 7 times

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Using Monte Carlo simulation, we show that ballistic electrons coupled with intervalley scattering produce peaks in the distribution function of electrons in submicron structures. The distribution functions f(v,x) and f(ϵ,x) for a submicron N+‐N−‐N+ GaAs structure indicate that ballistic electrons cause both the dominant peak in f(v,x) throughout the N− region and additional peaks in f(ϵ,x) following transfer from the L valley to the Γ valley. For low densities and low temperatures (T=77), both ballistic peaks in f(ϵ,x) split into several sharp peaks separated in energy by the optic‐phonon energy.
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72.20.Ht High-field and nonlinear effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling
73.61.Ey III-V semiconductors

Integrate‐and‐fire infrared detectors

D. D. Coon and A. G. U. Perera

Appl. Phys. Lett. 51, 1711 (1987); http://dx.doi.org/10.1063/1.98552 (3 pages) | Cited 3 times

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The effect of infrared radiation on spontaneous pulsing of forward biased silicon p+‐n‐n+ diodes (injection mode devices) at 4.2 K is studied as a means of detecting infrared radiation in the wavelength range of 20–32 μm. A model based on space‐charge buildup of phosphorus donors in the i region is developed to explain the integration and the sudden firing as well as the dependence of firing frequency on infrared flux. Experimentally, a dynamic range of about a million and responsivities of 9×109 Hz/W (9.6 A/W) have been found in nonoptimized detectors. Theory indicates the possibility of even larger dynamic ranges. Dark pulse rates as low as 10−5 Hz have been observed.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
85.30.De Semiconductor-device characterization, design, and modeling

Mechanism of alkali‐promoted oxidation of silicon

M. C. Asensio, E. G. Michel, E. M. Oellig, and R. Miranda

Appl. Phys. Lett. 51, 1714 (1987); http://dx.doi.org/10.1063/1.98553 (3 pages) | Cited 39 times

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Photoelectron spectroscopy data suggest that the mechanism of enhanced oxidation of Si promoted by multilayers of K deposited on its surface is based on the formation of potassium oxides, identified as K2O2 and KO2, that transfer oxygen efficiently to the Si substrate upon annealing at 900 K.
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81.65.-b Surface treatments
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Linear polarization effects in anisotropic photoemission from GaAs/AlAs short‐period superlattices

K. Fujiwara, N. Tsukada, T. Nakayama, and T. Nishino

Appl. Phys. Lett. 51, 1717 (1987); http://dx.doi.org/10.1063/1.98554 (3 pages) | Cited 12 times

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By investigating the linear polarization dependence of intrinsic emissions from undoped GaAs/AlAs short‐period superlattices at room temperature, it is shown that a dominating peak observed in the normal emission spectra is due to the free‐carrier recombination associated with the lowest electron to mixed‐hole subbands with an unexpectedly large light‐hole character instead of with the lowest electron to pure heavy‐hole subbands expected in an ideal superlattice. Origins of the extensive valence‐band mixing in the synthesized superlattices are discussed in relation to microscopic fluctuations in the layer thicknesses observed in the transmission electron microscope lattice image.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Electroreflectance and photoluminescence studies of (AlxGa1−x)1−zInzPyAs1−y lattice matched to GaAs

K. Asami, T. Okuno, S. Emura, S. Gonda, and S. Mukai

Appl. Phys. Lett. 51, 1720 (1987); http://dx.doi.org/10.1063/1.98555 (3 pages) | Cited 4 times

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Electroreflectance (ER) measurements have been performed on an (AlxGa1−x)1−zInzPyAs1−y pentanary alloy grown on (100) GaAs in the energy range 1.3–3.8 eV at 300 K. Accurate band‐gap energy has been determined from ER measurements. Photoluminescence (PL) spectra have been measured in the energy range 1.3–2.0 eV at 300 and 77 K. From the broadening parameters in ER spectra and the full width of half‐maxima in PL spectra, the quality of AlGaInPAs has been discussed. The other optical features, E0+Δ0, E1, E1+Δ1, and the spin‐orbit splitting parameters Δ0 and Δ1 have been determined.
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78.20.Jq Electro-optical effects
78.55.Cr III-V semiconductors
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Effect of substrate surface structure on nucleation of GaAs on Si(100)

R. Hull, A. Fischer‐Colbrie, S. J. Rosner, S. M. Koch, and J. S. Harris

Appl. Phys. Lett. 51, 1723 (1987); http://dx.doi.org/10.1063/1.98556 (3 pages) | Cited 31 times

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We study the effect of surface structure upon the nucleation of GaAs in molecular beam epitaxy growth on vicinal Si(100) surfaces. In general, cross‐sectional transmission electron microscopy reveals that nucleation of GaAs islands is associated with surface steps produced by the deliberate substrate misorientation. Furthermore, it is found that standard in situ cleaning of the Si surface prior to deposition can result in steps grouping together, producing local surface facets. GaAs nucleation then occurs on these facets, the nucleation sites being correspondingly further apart than for an equilibrium distribution of monolayer steps.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)

Nanometer‐scale columns in GaAs fabricated by angled chlorine ion‐beam‐assisted etching

W. D. Goodhue, S. W. Pang, G. D. Johnson, D. K. Astolfi, and D. J. Ehrlich

Appl. Phys. Lett. 51, 1726 (1987); http://dx.doi.org/10.1063/1.98557 (3 pages) | Cited 4 times

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Angled chlorine ion‐beam‐assisted etching has been used in combination with masked ion beam lithography to produce columns in GaAs with widths of less than 10 nm and height‐to‐width ratios greater than 25. This technique allows the highly controllable fabrication of structures with dimensions smaller than initially defined by the lithography. It can be applied to the fabrication of ultrasmall GaAs/AlGaAs quantum well structures having quantized energy states in two or three dimensions while at the same time being compatible with full‐wafer processing.
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81.65.-b Surface treatments
85.40.Bh Computer-aided design of microcircuits; layout and modeling
68.35.B- Structure of clean surfaces (and surface reconstruction)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
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