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7 Dec 1987

Volume 51, Issue 23, pp. 1873-1962

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Rapid lattice expansion and increased x‐ray reflectivity of a multilayer structure due to pulsed laser heating

A. Zigler, J. H. Underwood, J. Zhu, and R. W. Falcone

Appl. Phys. Lett. 51, 1873 (1987); http://dx.doi.org/10.1063/1.98496 (3 pages) | Cited 7 times

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The spacing of layers in a sputtered, multilayer structure was rapidly and permanently increased by heating with a nanosecond laser pulse. During laser heating, the Bragg angle decreased and the peak reflectivity increased for diffraction of soft x‐ray radiation at 4.4 nm. Measurements were made using a time and space resolving x‐ray streak camera detector.
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78.66.Sq Composite materials
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.80.Cb X-ray effects

Modulation of light by an electrically tunable multilayer interference filter

G. W. Yoffe, D. G. Schlom, and J. S. Harris

Appl. Phys. Lett. 51, 1876 (1987); http://dx.doi.org/10.1063/1.98497 (3 pages) | Cited 7 times

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We describe the structure and performance of a new, nonabsorbing, perpendicular geometry light modulator based on an electrically tunable, multilayer interference filter. The device consists of a GaAs/AlAs quarter‐wave stack with aluminum contacts, grown by molecular beam epitaxy. A strong, applied electric field changes the refractive indices through the Franz–Keldysh effect, shifting the transmission spectrum and modulating the intensity of light tuned to the edges of the high reflectance band. Modulation ratios up to 2.5:1 have been obtained for photon energies 0.05–0.2 eV below the GaAs band gap. The device has applications in arrays and for modulation of high power light.
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42.79.Hp Optical processors, correlators, and modulators
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.79.Ci Filters, zone plates, and polarizers

High power, high efficiency window buried heterostructure GaAlAs superluminescent diode with an integrated absorber

Norman S. K. Kwong, Kam Y. Lau, Nadav Bar‐Chaim, Israel Ury, and Kevin J. Lee

Appl. Phys. Lett. 51, 1879 (1987); http://dx.doi.org/10.1063/1.98498 (3 pages) | Cited 14 times

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A superluminescent diode (SLD) based on a proven high power, high efficiency ‘‘window‐’’ type index‐guided buried heterostructure laser is demonstrated. Lasing is suppressed for SLD operation by antireflection coating and by incorporating an unpumped absorber section. The resulting device emits high optical power (14 mW) in the SLD mode at very low injection current (50 mA). The spectral modulation depth is below 14% over the entire emission spectral bandwidth of 20 nm, with a symmetrical beam divergence (20°×40°) and a stable transverse mode.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.81.Pa Sensors, gyros

Time‐resolved direct observation of Auger recombination in semiconductor‐doped glasses

P. Roussignol, M. Kull, D. Ricard, F. de Rougemont, R. Frey, and C. Flytzanis

Appl. Phys. Lett. 51, 1882 (1987); http://dx.doi.org/10.1063/1.98499 (3 pages) | Cited 28 times

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See Also: Erratum

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Using time‐resolved techniques, absorption recovery, and degenerate four‐wave mixing, we directly observe the nonexponential intensity‐dependent recombination of free carriers photoexcited in semiconductor‐doped glasses. We assign this behavior to Auger recombination.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
42.70.Ce Glasses, quartz

Highly efficient Nd:YVO4 diode‐laser end‐pumped laser

R. A. Fields, M. Birnbaum, and C. L. Fincher

Appl. Phys. Lett. 51, 1885 (1987); http://dx.doi.org/10.1063/1.98500 (2 pages) | Cited 144 times

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We report on the first diode‐laser (nominal 200‐mW 10‐stripe laser diode) end‐pump lasing of Nd:YVO4. The lowest threshold (30 mW) and highest output power (120 mW) were observed from the Nd:YVO4 laser as compared to a similar Nd:YAG laser. Over 50% optical slope efficiency was obtained, the highest yet reported for diode pumping. This device performed at a 10% overall efficiency. Measurements over a 21‐nm range show the advantages of the Nd:YVO4 pump absorption band.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Simultaneous delivery of neodymium:yttrium aluminum garnet and CO laser beams by a single As‐S glass fiber

Tsunenori Arai, Makoto Kikuchi, Mitsunori Saito, and Masaya Takizawa

Appl. Phys. Lett. 51, 1887 (1987); http://dx.doi.org/10.1063/1.98501 (2 pages)

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The simultaneous energy delivery of neodymium:yttrium aluminum garnet (Nd:YAG) and CO laser beams by a single As‐S glass fiber is described. The transmission loss in the fiber of a Nd:YAG laser beam was 2.6 dB/m under the energy delivery. A fiber output of 14 W was obtained at an approximately 1:1 power ratio from these lasers with a 400‐μm core diameter fiber.
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42.81.Dp Propagation, scattering, and losses; solitons
42.70.Ce Glasses, quartz

Acoustic investigation of the elastic properties of ZnO films

G. Carlotti, G. Socino, A. Petri, and E. Verona

Appl. Phys. Lett. 51, 1889 (1987); http://dx.doi.org/10.1063/1.98502 (3 pages) | Cited 36 times

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The elastic properties of ZnO films deposited by rf magnetron sputtering on Al2O3 substrates have been analyzed by means of an acoustic investigation technique. The phase velocities of a spectrum of acoustic modes propagating along the layered structure have been measured and the results exploited for determining the complete set of elastic constants of the film. The effective constants of the film are lower than those of the bulk material by amounts which depend on the elastic constant considered and range from −1.2% for c33 to −24.8% for c11. The values obtained were used for determining the dispersion curves of acoustic modes propagating along ZnO layers deposited on fused quartz and silicon and showed good agreement with experimental results.
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43.35.Ns Acoustical properties of thin films
68.60.Bs Mechanical and acoustical properties
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
43.35.Pt Surface waves in solids and liquids

Thermoelastic surface deformation—time evolution

N. S. Tankovsky, A. P. Mitev, and A. G. Kebedjiev

Appl. Phys. Lett. 51, 1892 (1987); http://dx.doi.org/10.1063/1.98503 (3 pages)

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A method is reported, which allows us to measure the dynamics of the surface thermoelastic deformations. We have obtained the time evolution of amplitudes of surface deformations induced by absorption of a laser beam in Plexiglas samples of different geometry. A qualitative discussion of the obtained results is made.
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65.40.De Thermal expansion; thermomechanical effects
07.60.Ly Interferometers
81.40.Lm Deformation, plasticity, and creep
68.35.Gy Mechanical properties; surface strains

Electrical and structural characterization of ultrathin epitaxial CoSi2 on Si(111)

Julia M. Phillips, J. L. Batstone, J. C. Hensel, and M. Cerullo

Appl. Phys. Lett. 51, 1895 (1987); http://dx.doi.org/10.1063/1.98504 (3 pages) | Cited 31 times

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We report the fabrication of epitaxial CoSi2 layers on Si(111) as thin as 1 nm. The crystalline lattice of these layers is coherent with the Si lattice, and the silicide is electrically continuous. There are pronounced structural differences between films which are less than 3 nm thick and those which are thicker. The resistivity of the layers increases sharply with decreasing thickness. This is the first report of the growth of coherent, electrically continuous CoSi2 layers on Si.
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68.55.-a Thin film structure and morphology
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
73.61.At Metal and metallic alloys
81.15.Np Solid phase epitaxy; growth from solid phases

Laser‐induced structural instabilities in amorphous materials

I. Abdulhalim, R. Beserman, Yu. L. Khait, and R. Weil

Appl. Phys. Lett. 51, 1898 (1987); http://dx.doi.org/10.1063/1.98505 (3 pages) | Cited 11 times

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Amorphous materials irradiated by cw lasers undergo structural changes, which depend quasiperiodically on the irradiation time. The changes in the transmitted light intensity are related to the changes of the Raman line shape. The structural changes between metastable states are favored by the photogenerated free carriers.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
63.50.-x Vibrational states in disordered systems
78.30.-j Infrared and Raman spectra

Initial stages of the ion beam mixing process

A. Traverse, M. G. Le Boité, L. Névot, B. Pardo, and J. Corno

Appl. Phys. Lett. 51, 1901 (1987); http://dx.doi.org/10.1063/1.98993 (3 pages) | Cited 6 times

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The grazing x‐ray reflectometry technique, performed on irradiated periodic multilayers, was used to study the early stages of the ion beam mixing process. We present our first results, obtained on NiAu samples irradiated with He ions. The experimental fluence dependence of the effective diffusion coefficient is in good agreement with a calculation based on a purely ballistic process.
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61.80.Jh Ion radiation effects
66.30.J- Diffusion of impurities
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Fx Diffusion; interface formation

Raman scattering study of low dose Si±‐implanted GaAs used for metal‐semiconductor field‐effect transistor fabrication

J. Wagner, Th. Frey, and W. Jantz

Appl. Phys. Lett. 51, 1904 (1987); http://dx.doi.org/10.1063/1.98506 (3 pages) | Cited 1 time

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The annealing of the lattice damage introduced by Si+ implantation into GaAs as well as the electrical activation of the dopant has been studied by Raman scattering. Implantation doses (4×1012–1×1013 cm−2) and annealing conditions (800–1040 °C for 5 s) were used which are typical for GaAs metal‐semiconductor field‐effect transistor fabrication. The normalized peak intensity of the longitudinal optical (LO) phonon‐plasmon coupled mode is found to correlate with the sheet of conductivity, i.e., it probes the electrical activation. The lattice perfection, in contrast, is most sensitively measured by resonant 2LO‐phonon scattering.
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61.72.Bb Theories and models of crystal defects
61.80.Jh Ion radiation effects
78.30.Fs III-V and II-VI semiconductors
85.30.Tv Field effect devices

Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxy

N. Kobayashi, J. L. Benchimol, F. Alexandre, and Y. Gao

Appl. Phys. Lett. 51, 1907 (1987); http://dx.doi.org/10.1063/1.98507 (3 pages) | Cited 40 times

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The substrate temperature (Ts) dependence (350–700 °C) of GaAs and Ga1−y InyAs growth rates was investigated in metalorganic molecular beam epitaxy (MOMBE), using triethylgallium (TEG), trimethylindium (TMI), and solid arsenic (As4) sources. For GaAs growth, four distinct Ts dependent regions are observed, including a weak desorption process (500–650 °C) characteristic of MOMBE, preceding atomic Ga desorption (Ts >650 °C). When adding a TMI flux to grow Ga1−yInyAs, this desorption process was much enhanced up to 550 °C, and then decreased above 550 °C when the In desorption phenomenon takes place. Correlatively, the In alloy composition peaks at 550 °C. The same dependence was observed in Ga1−yInyAs growth using solid In and TEG sources. However, in Ga1−xAlxAs growth using solid Al or triethylaluminum (TEA) and TEG sources, the weak desorption observed in GaAs MOMBE was strongly minimized. From these results, possible growth mechanisms are discussed.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Nq Composition and phase identification

Growth and characterization of silicon molecular beam epilayers on GaP (111) substrates

Weidong Jiang, Guoliang Zhou, Keming Chen, Chi Sheng, Xiangjiu Zhang, and Xun Wang

Appl. Phys. Lett. 51, 1910 (1987); http://dx.doi.org/10.1063/1.98297 (3 pages)

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Silicon molecular beam epitaxy on thermally cleaned GaP(111) substrates has been prepared at 450 °C with the growth rate of 0.2 Å/s. The P segregation on the surface of Si epilayer beyond the thickness of 1500 Å has been observed. The surface of epilayer has the same (1×1) periodicity as that of the substrate when the thickness of the epilayer is less than 500 Å. Above 500 Å, the surface shows a (3×3) reconstruction. It is suggested that both (1×1) and (3×3) geometries are P‐stabilized surface structures.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Fx Diffusion; interface formation

Selective liquid phase epitaxy and defect reduction in GaAs grown on GaAs‐coated silicon by molecular beam epitaxy

Shiro Sakai, R. J. Matyi, and H. Shichijo

Appl. Phys. Lett. 51, 1913 (1987); http://dx.doi.org/10.1063/1.98298 (3 pages) | Cited 14 times

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This letter reports the first successful liquid phase epitaxial (LPE) growth of GaAs on GaAs‐coated Si grown by molecular beam epitaxy (MBE). The LPE growth was found to be strongly dependent on the width of the oxide stripe window which defined the area of the sample that was accessible to the LPE melt. Uniform single‐crystal layers of GaAs were obtained when the stripe was narrower than 20 μm; in contrast, meltback of the GaAs layers was observed in larger stripes. The minimum dislocation density of the LPE layer that was determined from cross‐sectional transmission electron microscopy was about 2–5×106 cm−2. This value was about two orders of magnitude lower than the dislocation density that was observed in the MBE GaAs‐on‐Si layer which served as a substrate for the LPE growth.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

New method of characterizing majority and minority carriers in semiconductors

D. L. Leslie‐Pelecky, D. G. Seiler, M. R. Loloee, and C. L. Littler

Appl. Phys. Lett. 51, 1916 (1987); http://dx.doi.org/10.1063/1.98299 (3 pages) | Cited 16 times

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A novel characterization method using magnetoconductivity tensor components to determine the carrier concentration and mobility of majority and minority carriers is presented. Results are given for bulk n‐HgCdTe (one carrier), liquid phase epitaxial n‐HgCdTe (two carriers), and p‐InSb (two or three carriers). Advantages of this method over the standard Hall coefficient analysis are discussed.
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72.20.My Galvanomagnetic and other magnetotransport effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Fr Low-field transport and mobility; piezoresistance

Phonon shifts and strains in strain‐layered (Ga1−xInx)As

Gerald Burns, C. R. Wie, F. H. Dacol, G. D. Pettit, and J. M. Woodall

Appl. Phys. Lett. 51, 1919 (1987); http://dx.doi.org/10.1063/1.98300 (3 pages) | Cited 27 times

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We have measured the phonon frequencies (Raman technique) and the strains (x‐ray rocking curve technique) of (Ga1−xInx)As films on GaAs (100) substrates. Films with various x values and various thicknesses were studied. The films range from perfect epitaxial to those that have relaxed by different amounts. The strain‐induced frequency shift was calculated for each sample using the phonon deformation constants and measured strains. From the measurements and calculation, it is shown that the frequency shifts due to strain and the equivalent bulk frequencies for the phonon give internal agreement. This indicates that the Raman technique can be used for in situ monitoring of the growth process.
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63.20.D- Phonon states and bands, normal modes, and phonon dispersion
78.30.Fs III-V and II-VI semiconductors
68.60.Bs Mechanical and acoustical properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Very low temperature (250 °C) epitaxial growth of silicon by glow discharge of silane

K. Baert, J. Symons, W. Vandervorst, J. Vanhellemont, M. Caymax, J. Poortmans, J. Nijs, and R. Mertens

Appl. Phys. Lett. 51, 1922 (1987); http://dx.doi.org/10.1063/1.98301 (3 pages) | Cited 9 times

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Epitaxial growth of phosphorus‐doped silicon deposited at 250 °C from a radio‐frequency glow discharge from SiH4 is demonstrated by high‐resolution electron microscopy (HREM) and spreading resistance profile measurements. Thin epitaxial films are present at the interface between (100) Si substrates and hydrogenated amorphous silicon. After recrystallization at 700 °C, single‐crystal layers are obtained, in which HREM reveals extensive twinning. The fact that epitaxial growth can take place at 250 °C in a system with a background pressure of only 5×10−6 mbar can be attributed to the presence of species in the SiH4 plasma that reduce the native oxide and the use of HF in the cleaning procedure.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Hydrogenated amorphous silicon prepared by ArF and F2 excimer laser‐induced photochemical vapor deposition

Yasutake Toyoshima, Ken Kumata, Uichi Itoh, and Akihisa Matsuda

Appl. Phys. Lett. 51, 1925 (1987); http://dx.doi.org/10.1063/1.98302 (3 pages) | Cited 16 times

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Hydrogenated amorphous silicon (a‐Si:H) films were prepared by laser‐induced photochemical vapor deposition using ArF and F2 excimer lasers. Disilane (Si2H6) and trisilane (Si3H8) diluted with helium were used as the reaction gases for the ArF laser and monosilane (SiH4), disilane, and trisilane for the F2 laser. A good linear correlation was found between the estimate of deposition rate derived from gas phase photoabsorption and the observed deposition rate, indicating that one‐photon process governs the film deposition rate. Density of excited molecules in the gas phase was found to be an important factor in controlling the film properties. Laser irradiation onto the growing surface also affects the film properties through a decrease in the hydrogen incorporated in the film.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.50.-m Photochemistry

Crosshatch patterns in GaAs films on Si substrates due to thermal strain in annealing processes

Takashi Nishioka, Yoshio Itoh, Akio Yamamoto, and Masafumi Yamaguchi

Appl. Phys. Lett. 51, 1928 (1987); http://dx.doi.org/10.1063/1.98303 (3 pages) | Cited 17 times

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Crosshatch patterns were observed for the first time on the annealed GaAs film surfaces on Si substrates. The alignment of etch pits and the reduced electron beam induced current (EBIC) lines were also observed. They indicate that dislocations move and arrange themselves onto specified slip planes of {111} directions due to thermal strains in the annealing process. Flatter morphologies and more reduced EBIC intensity variations of the samples with crosshatch patterns indicate improved GaAs film quality.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Bb Theories and models of crystal defects
81.65.-b Surface treatments
68.35.Dv Composition, segregation; defects and impurities

Raman scattering measurements of decreased barrier heights in GaAs following surface chemical passivation

L. A. Farrow, C. J. Sandroff, and M. C. Tamargo

Appl. Phys. Lett. 51, 1931 (1987); http://dx.doi.org/10.1063/1.98304 (3 pages) | Cited 40 times

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We present Raman scattering data from GaAs samples whose surfaces had been treated with thin films of sodium sulfide nonahydride (Na2S⋅9H2O). Raman scattering provides a quantitative, contactless means of measuring the reduced barrier height associated with decreased density of GaAs surface states. For GaAs samples doped at levels of n≊1018 cm−3, the barrier height is reduced to 0.48±0.10 eV.
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73.20.At Surface states, band structure, electron density of states
78.30.Fs III-V and II-VI semiconductors
81.65.-b Surface treatments
73.30.+y Surface double layers, Schottky barriers, and work functions

Interface roughness scattering in GaAs/AlAs quantum wells

H. Sakaki, T. Noda, K. Hirakawa, M. Tanaka, and T. Matsusue

Appl. Phys. Lett. 51, 1934 (1987); http://dx.doi.org/10.1063/1.98305 (3 pages) | Cited 344 times

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We study experimentally and theoretically the influence of interface roughness on the mobility of two‐dimensional electrons in modulation‐doped AlAs/GaAs quantum wells. It is shown that interface roughness scattering is the dominant scattering mechanism in thin quantum wells with a well thickness Lw<60 Å, where electron mobilities are proportional to L6w, reaching 2×103 cm2/V s at Lw∼55 Å. From detailed comparison between theory and experiment, it is determined that the ‘‘GaAs‐on‐AlAs’’ interface grown by molecular beam epitaxy has a roughness with the height of 3–5 Å and a lateral size of 50–70 Å.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Bk General theory, scattering mechanisms
68.35.Gy Mechanical properties; surface strains
73.50.Dn Low-field transport and mobility; piezoresistance

Radiation induced interface states in metal‐aluminosilicate (Al2O3⋅SiO2) insulator‐Si capacitors

Makoto Ishida, Hikaru Sakamoto, Haruo Shirotori, and Tetsuro Nakamura

Appl. Phys. Lett. 51, 1937 (1987); http://dx.doi.org/10.1063/1.98306 (3 pages) | Cited 3 times

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Aluminosilicate (Al2O3⋅SiO2) thin films were prepared on a (100) Si wafer by pyrolysis of Al(CH3)3, SiH4, and N2O gases at the deposition temperature of 850 °C. From the high‐frequency and the quasi‐static capacitance‐voltage measurements, the initial interface state densities of capacitors with Al2O3⋅SiO2 gate insulators were 1.3–2.2×1011 cm−2 eV−1, and hysteresis characteristics were not present. Distribution of interface states of Al2O3⋅SiO2/Si was different from that of SiO2/Si. Even after exposure to 1×105 rads (Si) of Co60 γ‐ray irradiation, the interface states were not affected. The interface state density showed a slight increase after exposure to 1×106 rads.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.80.Ed γ-ray effects
73.61.Ng Insulators

Role of atomic tellurium in the growth kinetics of CdTe (111) homoepitaxy

J. T. Cheung

Appl. Phys. Lett. 51, 1940 (1987); http://dx.doi.org/10.1063/1.98307 (3 pages) | Cited 11 times

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Very high surface temperature can be reached by exposing CdTe to intense laser radiation. Under this condition, the evaporation is dissociative to form a mixture of Cd, Te, and Te2. The fraction of atomic Te can be varied by changing the laser power, thus allowing a systematic elucidation on the role of atomic Te in the growth kinetics of (111) CdTe homoepitaxy. In comparison with Te molecules, the use of Te atoms improves the surface morphology of layers grown on the (111)A face and enhances the growth rate on both the (111)A and (111)B faces. Results suggest that the atomic Te is more reactive.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
79.20.Ds Laser-beam impact phenomena
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology

Theoretical formalism to understand the role of strain in the tailoring of hole masses in p‐type InxGa1−xAs (on GaAs substrates) and In0.53+xGa0.47−xAs (on InP substrates) modulation‐doped field‐effect transistors

Mark Jaffe, Yoshihiko Sekiguchi, and Jasprit Singh

Appl. Phys. Lett. 51, 1943 (1987); http://dx.doi.org/10.1063/1.98308 (3 pages) | Cited 9 times

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Recently, experimental studies have suggested that strained p‐channel modulation‐doped field‐effect transistors (MODFET’s) display enhanced characteristics due to a decrease in hole masses. In this letter, we examine the potential of using biaxial compressive strain to lower the effective mass of the hole gas. The Kohn–Luttinger Hamiltonian is used to describe the hole states in a strained channel. Using this, the Schrödinger equation is solved self‐consistently with the Poisson equation. The coupling between light‐ and heavy‐hole states is found to be critical to get accurate properties of the hole gas. A decrease in the effective hole mass of more than three times is found at low temperatures in the presence of the biaxial strain. The theoretical technique described here is not variational in nature and can be applied to an arbitrarily shaped confining potential profile with different material parameters across interfaces. This technique should be quite useful in designing and understanding strained p‐MODFET devices.
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71.15.-m Methods of electronic structure calculations
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Tv Field effect devices
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