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7 Dec 1987

Volume 51, Issue 23, pp. 1873-1962

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Abruptness of Au‐Si contacts with thin CoSi2 interlayers

F. Xu, C. M. Aldao, I. M. Vitomirov, and J. H. Weaver

Appl. Phys. Lett. 51, 1946 (1987); http://dx.doi.org/10.1063/1.98309 (3 pages) | Cited 5 times

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High‐resolution synchrotron radiation photoelectron spectroscopy has been used to study Au/Si and Au/CoSi2/Si interface formation at room temperature. Our results show Au‐Si intermixing, the absence of a well defined Au‐Si compound, and surface segregation of small amounts of Si to the Au surface. An interlayer formed by the deposition of ≤3 Å of Co has relatively small effect on this Au‐Si atomic profile. Intermixing is abruptly quenched, however, when the Co deposition exceeds 3.5 Å, and a Au film free of Si can grow on the CoSi2 layer. These results demonstrate the effectiveness of CoSi2 layer as a barrier against Au‐Si intermixing and identify the critical coverage of Co needed to passivate the Si surface.
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68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
73.40.Ns Metal-nonmetal contacts
79.60.Jv Interfaces; heterostructures; nanostructures

Degradation in GaAs/AlGaAs double‐heterostructure light‐emitting diodes

Junko Ogawa, Kohshi Tamamura, Katsuhiro Akimoto, and Yoshifumi Mori

Appl. Phys. Lett. 51, 1949 (1987); http://dx.doi.org/10.1063/1.98310 (2 pages) | Cited 4 times

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Degradation of GaAs/AlGaAs double‐heterostructure light‐emitting diodes under accelerated aging tests has been investigated through cathodoluminescence measurements. We observed an increase in intensity of the band‐edge emission and a decrease in that of defect‐related deep level emision for the cladding layers. As for the active layer, a decrease was observed in the intensity of the band‐edge emission. These results suggest that defects migrate gradually from the cladding layer into the active layer.
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85.60.Jb Light-emitting devices
78.60.Hk Cathodoluminescence, ionoluminescence

Magnetron sputtering and laser patterning of high transition temperature Cu oxide films

M. Scheuermann, C. C. Chi, C. C. Tsuei, D. S. Yee, J. J. Cuomo, R. B. Laibowitz, R. H. Koch, B. Braren, R. Srinivasan, and M. M. Plechaty

Appl. Phys. Lett. 51, 1951 (1987); http://dx.doi.org/10.1063/1.98986 (3 pages) | Cited 34 times

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High Tc Y‐Ba‐Cu‐O films have been prepared by dc magnetron sputtering of metal alloy targets. To circumvent the negative ion effect, two alloy targets, YCu and BaCu, are sputtered in an argon atmosphere with an oxygen spray near the substrate. Films deposited on sapphire with onsets at 92 K and a 6° transition width (10–90%) have been achieved using this technique. These films have been successfully patterned with the technique of laser ablation.
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74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures
81.15.Cd Deposition by sputtering
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments

Use of the Meissner effect to separate, purify, and classify superconducting powders

Michel Barsoum, Daniel Patten, and Somdev Tyagi

Appl. Phys. Lett. 51, 1954 (1987); http://dx.doi.org/10.1063/1.98311 (3 pages) | Cited 2 times

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A separation technique, based on the Meissner effect, to purify and classify superconducting powders was developed. Powders of the Y1Ba2Cu3O7−x composition were sealed in a glass tube, cooled to liquid‐nitrogen temperature, and passed over the pole of a magnet. The superconducting phase responded to the field and moved away from the magnet, whereas the nonsuperconducting phases, impurities, especially magnetic, and unreacted phases did not move. X‐ray diffraction revealed that the separated powder was single phase with all impurity phases eliminated. Furthermore, the powder particles separated along the length of the tube according to their size and applied magnetic field: the larger the particles and/or the field the farther the movement and the smaller the particles that moved.
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74.70.-b Superconducting materials other than cuprates
74.25.Ha Magnetic properties including vortex structures and related phenomena
81.10.-h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

Highly oriented polydiacetylene films by vacuum deposition

Tatsuo Kanetake, Ken Ishikawa, Takao Koda, Yoshinori Tokura, and Kenji Takeda

Appl. Phys. Lett. 51, 1957 (1987); http://dx.doi.org/10.1063/1.98312 (3 pages) | Cited 25 times

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Highly oriented polydiacetylene films have been fabricated by the vacuum deposition method using a new alignment technique. Details of the method are described, and optical and structural properties of typical oriented films of poly[dodecadiyne‐1,12‐diol‐ bis(n‐butoxycarbonyl‐methyl‐urethane)][PDA‐4BCMU] are reported.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
78.66.Qn Polymers; organic compounds
82.35.-x Polymers: properties; reactions; polymerization

Current‐density profiles for a Ga+ ion microprobe and their lithographic implications

R. L. Kubena and J. W. Ward

Appl. Phys. Lett. 51, 1960 (1987); http://dx.doi.org/10.1063/1.98313 (3 pages) | Cited 16 times

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A 50‐keV focused Ga+ beam was used to expose dots in a negative‐acting bilevel resist structure in an exposure range between 1 μs/pixel and 4 s/pixel. The radii of the resist dots were used to determine the current‐density profiles of the Ga+ ion microprobe down to six orders of magnitude below the peak versus system magnification and ion source current. The effect of the beam profile on the limiting pitch for densely packed resist dot arrays was modeled and compared to experimental results.
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85.40.Bh Computer-aided design of microcircuits; layout and modeling
81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
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