APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

14 Dec 1987

Volume 51, Issue 24, pp. 1971-2063

Page 1 of 2 Pages Next Page | Jump to Page

Optical polarization bistability with high switching speed in a TM wave injected buried heterostructure laser

Yoshihiro Mori, Jun Shibata, and Takao Kajiwara

Appl. Phys. Lett. 51, 1971 (1987); http://dx.doi.org/10.1063/1.98314 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
We demonstrate optical polarization bistability in a semiconductor laser for the first time. Only the optical signal pulses are used as triggers for switching the transverse mode of the laser. The two stable states are identified as the transverse electric mode and the transverse magnetic mode, respectively, while the optical input consists of the transverse magnetic wave. Switching speeds up to a few hundred picoseconds have been achieved for both switch‐up and switch‐down.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Optical signal selection with a constant gain and a gain bandwidth by a multielectrode distributed feedback laser amplifier

Katsuaki Magari, Hitoshi Kawaguchi, Kunishige Oe, Yoshinori Nakano, and Mitsuo Fukuda

Appl. Phys. Lett. 51, 1974 (1987); http://dx.doi.org/10.1063/1.98315 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Optical demultiplexing characteristics are studied using a multielectrode distributed feedback laser amplifier. The gain maximum frequency is tunable over 20.6 GHz with a constant insertion gain (9.7±1.2 dB) and a constant gain bandwidth (2.9 GHz), without any mode jump, by changing the driving current of the divided two electrodes. A single optical signal can be selected from two optical inputs separated by 15.4 GHz with an extinction ratio of better than −20 dB.
Show PACS
42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Green infrared‐pumped erbium upconversion laser

A. J. Silversmith, W. Lenth, and R. M. Macfarlane

Appl. Phys. Lett. 51, 1977 (1987); http://dx.doi.org/10.1063/1.98316 (3 pages) | Cited 92 times

Full Text: | Download PDF

Show Abstract
An upconversion pumping scheme was used to produce cw laser action at 0.55 μm in YAlO3:Er3+ at temperatures up to 77 K on the 4S3/2→4I15/2 transition. Two infrared dye lasers at 792.1 and 839.8 nm were used as the pump sources for stepwise two‐photon excitation of the 4S3/2 upper laser level at 18 406 cm−1. The laser operates in the fundamental TEM00 mode, and a cw output power of ∼1 mW was achieved with ∼200 mW pump power from each infrared dye laser.
Show PACS
42.55.-f Lasers
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Metalorganic vapor phase epitaxial growth for buried heterostructure GaAlAs lasers with semi‐insulating blocking layers

Masanobu Okayasu, Atsuo Kozen, Yuji Hasumi, Jiro Temmyo, and Shingo Uehara

Appl. Phys. Lett. 51, 1980 (1987); http://dx.doi.org/10.1063/1.98317 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
A two‐step metalorganic vapor phase epitaxial growth technique for fully planar GaAs/GaAlAs single quantum well buried heterostructure lasers with oxygen‐doped semi‐insulating blocking layers is described. GaAlAs blocking layer with resistivity above 106 Ω cm is reproducibly obtained by introducing oxygen at a concentration above 0.03 ppm during the growth. The selective growth mode of GaAlAs layers in etched grooves is studied to realize fully planar buried structures. Lasing characteristics with threshold current of 19 mA, external differential quantum efficiency of 50%, and maximum light output power of 100 mW/facet are confirmed.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.15.Kk Vapor phase epitaxy; growth from vapor phase
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Monolithic integration of a transparent dielectric waveguide into an active laser cavity by impurity‐induced disordering

Robert L. Thornton, John E. Epler, and Thomas L. Paoli

Appl. Phys. Lett. 51, 1983 (1987); http://dx.doi.org/10.1063/1.98318 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
In this letter we report the successful combination of a low‐loss buried waveguide providing two‐dimensional optical confinement with an active gain medium. We have thereby realized a planar and monolithic composite cavity laser where the laser cavity consists of distinct regions of optical gain combined with distinct regions of low‐loss optical waveguide. The low threshold currents of these strucures (<10 mA) confirm the low loss and waveguiding nature of the waveguide regions. The ability to make these types of structures has applications for window lasers, monolithic waveguides, and monolithic integration of electrical and optical components.
Show PACS
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Xenon excited state density measurements in electron beam pumped XeCl laser mixtures

F. Kannari, W. D. Kimura, J. F. Seamans, and Dean R. Guyer

Appl. Phys. Lett. 51, 1986 (1987); http://dx.doi.org/10.1063/1.98319 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
Time‐dependent density measurements of the lowest xenon excited states (5p56s) in electron beam (e‐beam) pumped XeCl laser mixtures (nonlasing) are performed using pulsed hook interferometry. The e‐beam pulse length is ≊0.45 μs (full width at half‐maximum) with an average excitation rate of ≊250 kW/cm3. Density differences (ΔN∗) of transitions at 823.2 nm (6s[3/2]02 –6p[3/2]2), 828.0 nm (6s[3/2]01 –6p[1/2]0), and 840.9 nm (6s[3/2]02 –6p[3/2]1) are obtained for various HCl and Xe concentrations. For a 98.3% Ne/1.5% Xe/0.16% HCl mixture at 3000 Torr, ΔN∗ (823.2 nm) and ΔN∗(828.0 nm) are relatively constant at ≊3×1014 and ≊1.7×1014 cm−3, respectively. At lower initial HCl concentrations, the ΔN∗(823.2 nm) density starts out similar to the 0.16% HCl case, but tends to increase dramatically during the e‐beam pulse. For a 0.04% HCl mixture, a ΔN∗(840.9 nm) density of ≊4.5×1015 cm−3 is measured at the end of the e‐beam pulse. Preliminary comparisons of the data with a computer model show good agreement for HCl concentrations ≥0.16%, but disagreements at leaner concentrations.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.55.-f Lasers
34.50.Fa Electronic excitation and ionization of atoms (including beam-foil excitation and ionization)
31.50.Df Potential energy surfaces for excited electronic states

Strain‐induced In incorporation coefficient variation in the growth of Al1−xInxAs alloys by molecular beam epitaxy

F. Turco and J. Massies

Appl. Phys. Lett. 51, 1989 (1987); http://dx.doi.org/10.1063/1.98320 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
The reported experimental results demonstrate the influence of the substrate‐induced strain on the In incorporation coefficient in the growth of AlInAs by molecular beam epitaxy. AlInAs has either been grown lattice matched to InP or with a 2.3% lattice mismatch with GaAs. The In incorporation coefficient has been determined through reflection high‐energy electron diffraction intensity oscillations. The strain effect on the In incorporation coefficient is supported by a thermodynamic analysis applied to the more simple but similar case of strained InAs growth.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
82.60.Hc Chemical equilibria and equilibrium constants
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Epitaxial growth of Al(111)/Si(111) films using partially ionized beam deposition

C.‐H. Choi, R. A. Harper, A. S. Yapsir, and T.‐M. Lu

Appl. Phys. Lett. 51, 1992 (1987); http://dx.doi.org/10.1063/1.98321 (3 pages) | Cited 35 times

Full Text: | Download PDF

Show Abstract
We observed the growth of epitaxial Al(111) films on Si(111) at room temperature by the partially ionized beam deposition technique. The films were deposited in a conventional vacuum condition without in situ cleaning. The beam contained 0.3% of Al self‐ions and a bias potential of 1 kV was applied to the substrate during deposition. X‐ray diffraction (pole figure) revealed that one of the two possible twin structures, with the Al〈110〉∥Si〈110〉 orientation, was preferentially grown on the Si substrate.
Show PACS
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Jj Ion and electron beam-assisted deposition; ion plating
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Characteristics of annealed p/n junctions between GaAs and Si (100)

M. S. Unlu, G. Munns, J. Chen, T. Won, H. Unlu, H. Morkoç, G. Radhakrishnan, J. Katz, and D. Verret

Appl. Phys. Lett. 51, 1995 (1987); http://dx.doi.org/10.1063/1.98322 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
Electrical characteristics of GaAs( p)/Si(n) interface were determined from capacitance‐voltage (C‐V), current‐voltage (I‐V), and secondary ion mass spectroscopy (SIMS) measurements and compared to those on GaAs( p) epitaxial layes on GaAs(n) substrates. The comparison was made between the junctions as grown and after an anneal at 850 °C for 20 min in 10% forming gas under an As overpressure. For the GaAs/Si junction the ideality factor changed from 2 or larger to 1.5 and the apparent intercept voltage changed from 2.5 to 1.3 V after annealing. For the GaAs homojunction, the intercept voltage increased from 1.1 to 1.3 V. In addition, the excess current in the forward and reverse bias conditions dropped drastically in the heterojunction. No movement of the metallurgical junction was discernible to within the resolution capability of SIMS. The junction properties obtained by annealing suggest an atomic restructuring of the Si(100) interface during growth or annealing. These new results raise the possibility that the GaAs/Si interface can be made into an electrically viable junction and incorporated into active devices.
Show PACS
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.35.B- Structure of clean surfaces (and surface reconstruction)
73.61.Ey III-V semiconductors
81.40.Rs Electrical and magnetic properties related to treatment conditions

20.2% efficiency Al0.4Ga0.6As/GaAs tandem solar cells grown by molecular beam epitaxy

Chikara Amano, Hideo Sugiura, Akio Yamamoto, and Masafumi Yamaguchi

Appl. Phys. Lett. 51, 1998 (1987); http://dx.doi.org/10.1063/1.98272 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
We report on the fabrication and the characteristics of Al0.4Ga0.6As/GaAs tandem solar cells. The annealing characteristics of GaAs tunnel diodes are studied. It is found that the degradation of the tunnel peak current density by the annealing is suppressed for the diodes composed of a GaAs tunnel junction sandwiched between AlGaAs layers. The tunnel junction is applied to the interconnect between the Al0.4Ga0.6As top cell and the GaAs bottom cell for the tandem solar cell. The cell has a short‐circuit current density of 13.8 mA/cm2, an open‐circuit voltage of 2.10 V, a fill factor of 70.0%, and a conversion efficiency of 20.2% at 1 sun, AM1.5. This efficiency is the highest ever reported at 1 sun for tandem solar cells.
Show PACS
84.60.Jt Photoelectric conversion
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.50.Pz Photoconduction and photovoltaic effects

Raman scattering from AlGaInP

Masahiko Kondow, Shigekazu Minagawa, and Shin Satoh

Appl. Phys. Lett. 51, 2001 (1987); http://dx.doi.org/10.1063/1.98273 (3 pages) | Cited 22 times

Full Text: | Download PDF

Show Abstract
Raman scattering spectra from AlGaInP quaternary alloys grown on GaAs substrates are measured. Dominant peaks observed are identified as AlP‐, GaP‐, and InP‐like longitudinal optical modes. Mode frequency is seen to change almost linearly with aluminum composition, exhibiting the ‘‘partly three‐mode type’’ behavior.
Show PACS
78.30.Fs III-V and II-VI semiconductors
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Gallium arsenide field‐effect transistor by close spaced vapor transport epitaxy

J. Mimila‐Arroyo, R. Castanedo, F. Chávez, R. González, G. Navarro, and A. Reynoso

Appl. Phys. Lett. 51, 2004 (1987); http://dx.doi.org/10.1063/1.98274 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
For the first time gallium arsenide field‐effect transistors have been made using epitaxial layers grown by the close spaced vapor transport technique (CSVT). The layers were unintentionally doped and their free‐carrier concentration was adjusted through the growth parameters to around 1017 cm−3. For the growth of the layers, water vapor was used as transporting gas. This transistor confirms the capability of the simplest and most inexpensive epitaxial technique (CSVT) for growing device quality gallium arsenide epitaxial layers.
Show PACS
85.30.Tv Field effect devices
81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Ion beam enhanced magnetron reactive ion etching

J. D. Chinn

Appl. Phys. Lett. 51, 2007 (1987); http://dx.doi.org/10.1063/1.98275 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
A new dry etching technique is described which allows for decoupling of the chemical etch component from the ionic (physical) component which cannot be achieved in other conventional plasma processing methods. A magnetically confined rf plasma of SF6 was used to contribute a reactive chemical flux with ion bombardment energies of less than 50 eV. In conjunction with this reactive plasma, a broad beam ion source was used to independently deliver an Ar+ ionic flux to the substrate. It was observed that the ion enhanced etch rates of silicon were greater than the individual magnetron reactive ion etch and the argon ion milling rates combined. However, the structure profiles were observed to be directly related to the separately controllable etch components.
Show PACS
81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Slow relaxation and electric field quenching of persistent conductivity in GaAs metal‐semiconductor field‐effect transistors with different buffer layer structures

Jenn‐Chorng Liou and Kei May Lau

Appl. Phys. Lett. 51, 2010 (1987); http://dx.doi.org/10.1063/1.98276 (3 pages)

Full Text: | Download PDF

Show Abstract
Slow relaxation in photoconductivity and high transverse field effects have been investigated in GaAs metal‐semiconductor field‐effect transistors with undoped GaAs buffers and AlGaAs/GaAs superlattice buffers. Persistent photoconductivity (PPC) has been observed in both types of devices at 77 K. Complete electric field quenching of the PPC is possible in devices with a GaAs buffer. A high electric field resulted in more profound effects on the channel conductance of the superlattice buffered devices. The barrier established by the superlattice precludes complete elimination of the PPC and thermal quenching is necessary.
Show PACS
85.30.Tv Field effect devices
73.50.Pz Photoconduction and photovoltaic effects
73.50.Fq High-field and nonlinear effects
73.61.Ey III-V semiconductors

Ordering in GaAs1−xSbx grown by molecular beam epitaxy

Yeong‐Eon Ihm, N. Otsuka, J. Klem, and H. Morkoç

Appl. Phys. Lett. 51, 2013 (1987); http://dx.doi.org/10.1063/1.98277 (3 pages) | Cited 72 times

Full Text: | Download PDF

Show Abstract
Ordering in (100) GaAs1–x Sbx epilayers grown by molecular beam epitaxy has been studied by transmission electron microscopy. Diffraction patterns taken from plan‐view and cross‐sectional samples of epilayers reveal a unique evolution of the ordering with the growth temperature, showing the formation of a short range order at lower temperatures and a long range order at higher temperatures. A distinct anisotropy of the formation of ordered structures between [011] and [011] axes is observed from all epilayers investigated. Based on the analysis of the growth conditions, it is suggested that the anisotropy of the ordering is caused by the surface atomic structure of the growing epilayers.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Rh Phase transitions and critical phenomena
68.55.-a Thin film structure and morphology

Plasma‐enhanced deposition of high‐quality epitaxial silicon at low temperatures

James H. Comfort and Rafael Reif

Appl. Phys. Lett. 51, 2016 (1987); http://dx.doi.org/10.1063/1.98278 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
The use of a plasma during the deposition of epitaxial silicon from 750 to 800 °C is explored. Emphasis is placed on enhancement of the deposition process as opposed to the predeposition surface clean. Plasma enhancement of the deposition process is observed without a change in the apparent activation energy, and the mild ion bombardment (plasma) exposure during deposition introduced no additional defects observable by cross‐sectional transmission electron microscopy. Plasma enhancement is also shown to facilitate deposition of high‐quality epitaxial silicon films with low levels of unintentional impurity incorporation.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Raman scattering studies of ion beam induced mixing at the amorphous germanium/crystalline silicon interface

S. T. Kshirsagar, S. V. Rajarshi, R. O. Dusane, Jayashri Vaidya, and V. G. Bhide

Appl. Phys. Lett. 51, 2019 (1987); http://dx.doi.org/10.1063/1.98279 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
Thin layers of amorphous germanium vacuum deposited onto a 〈111〉 surface of crystalline silicon were irradiated with a Kr+ ion beam to produce an amorphous Si‐Ge alloy at the interface. Raman scattering measurements were performed on these films both before and after the ion irradiation. The vanishing of the strong Si‐Si lattice mode near 521 cm−1 and an appearance of the localized Si‐Ge vibrational mode near 375 cm−1 in the Raman spectra of ion‐irradiated films are correlated to the formation of an amorphous alloy of probable composition of Si0.2Ge0.8 at the interface.
Show PACS
61.80.Jh Ion radiation effects
78.30.Hv Other nonmetallic inorganics
78.35.+c Brillouin and Rayleigh scattering; other light scattering
68.55.-a Thin film structure and morphology

Effects of passivating ionic films on the photoluminescence properties of GaAs

B. J. Skromme, C. J. Sandroff, E. Yablonovitch, and T. Gmitter

Appl. Phys. Lett. 51, 2022 (1987); http://dx.doi.org/10.1063/1.98280 (3 pages) | Cited 134 times

Full Text: | Download PDF

Show Abstract
The passivating effects of spin‐coated films of Na2S⋅9H2O on GaAs surfaces have been studied using room‐temperature photoluminescence (PL) and low‐temperature PL spectroscopy. After passivation, the 300 K PL efficiency is increased on both n‐ and p‐type material; improvements of up to 2800× are observed. The surface field and surface recombination‐related notch features in the free and bound exciton emission spectra at low temperature are eliminated, implying that the residual band bending under illumination is less than 0.15 V.
Show PACS
78.55.Cr III-V semiconductors
81.65.-b Surface treatments
73.20.At Surface states, band structure, electron density of states
73.61.Ey III-V semiconductors

Electrical properties of Li‐doped Hg1−xCdxTe(100) by molecular beam epitaxy

P. S. Wijewarnasuriya, I. K. Sou, Y. J. Kim, K. K. Mahavadi, S. Sivananthan, M. Boukerche, and J. P. Faurie

Appl. Phys. Lett. 51, 2025 (1987); http://dx.doi.org/10.1063/1.98281 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
p‐type doping of HgCdTe(100) layers with lithium during growth by molecular beam epitaxy is reported. Hall measurements have been performed on these layers between 300 and 30 K. The Li concentration is found to increase with the Li cell temperature. Li‐doped HgCdTe layers are estimated to have very shallow acceptor levels. Acceptor concentrations as high as 8×1018 cm−3 have been achieved. At low doping levels, due to residual donors, layers show compensation. Incorporation coefficient of Li close to 1 and almost 100% electrical efficiency for Li in molecular beam epitaxy HgCdTe layers were observed. However, Li is found to diffuse rapidly in HgCdTe layers grown by molecular beam epitaxy.
Show PACS
73.61.Ga II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.20.Hb Impurity and defect levels; energy states of adsorbed species

High‐temperature depletion‐mode metal‐oxide‐semiconductor field‐effect transistors in beta‐SiC thin films

J. W. Palmour, H. S. Kong, and R. F. Davis

Appl. Phys. Lett. 51, 2028 (1987); http://dx.doi.org/10.1063/1.98282 (3 pages) | Cited 48 times

Full Text: | Download PDF

Show Abstract
Depletion‐mode n‐channel metal‐oxide‐semiconductor field‐effect transistors were fabricated on n‐type β‐SiC (111) thin films epitaxially grown by chemical vapor deposition on the Si (0001) face of 6H α‐SiC single crystals. The gate oxide was thermally grown on the SiC; the source and drain were doped n+ by N+ ion implantation at 823 K. Stable saturation and low subthreshold current were achieved at drain voltages exceeding 25 V. Transconductances as high as 11.9 mS/mm were achieved. Stable transistor action was observed at temperatures as high as 923 K, the highest temperature reported to date for a transistor in any material.
Show PACS
85.30.Tv Field effect devices
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Diffusion coefficients and activation energies for Zn diffusion into undoped and S‐doped InP

H. S. Marek and H. B. Serreze

Appl. Phys. Lett. 51, 2031 (1987); http://dx.doi.org/10.1063/1.98981 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
We present results of open tube Zn diffusion into undoped and S‐doped n‐type InP over the temperature range 550–675 °C. The process yields reproducible results which are consistent with an interstitial‐substitutional diffusion model. For the undoped samples, an activation energy of 1.52 eV and a diffusion constant of 4.9×10−2 cm2/s are obtained. For heavily S‐doped samples, values of 2.34 eV and 1.4×103 cm2/s, respectively, result. The difference in activation energy which is comparable to the Fermi level difference in the two substrate types is consistent with the different diffusion mechanisms which occur in these two types of InP.
Show PACS
66.30.J- Diffusion of impurities
68.35.Fx Diffusion; interface formation
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Deep levels associated with vacancy‐impurity complexes in GaAs

Yu‐Tang Shen and Charles W. Myles

Appl. Phys. Lett. 51, 2034 (1987); http://dx.doi.org/10.1063/1.98283 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
A theory of the deep energy levels produced by triplet vacancy‐impurity complexes in GaAs is described. The major chemical trends in the deep levels of a1 and b1 symmetry are predicted for 56 such complexes.
Show PACS
71.55.Eq III-V semiconductors

Abnormal solid solution and activation behavior in Ga‐implanted Si(100)

Jiro Matsuo, Ichiro Kato, Hiroshi Horie, Noriaki Nakayama, and Hajime Ishikawa

Appl. Phys. Lett. 51, 2037 (1987); http://dx.doi.org/10.1063/1.98284 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
Rapid thermal annealing (RTA) and furnace annealing of Ga‐implanted Si were studied. Ga atoms implanted into Si are located on substitutional lattice sites in concentration above the solid solubility limit after short‐time and low‐temperature annealing. Low‐resistivity shallow p+ junctions can be fabricated using this metastable layer. However, precipitation and redistribution of the Ga atoms were observed after high‐temperature or longer time annealing. Shallow p+ junctions fabricated by Ga implantation and RTA are suitable for submicron complementary‐metal‐oxide‐semiconductor devices.
Show PACS
61.72.Bb Theories and models of crystal defects
61.72.uf Ge and Si
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Laser etching of metals in neutral salt solutions

M. Datta, L. T. Romankiw, D. R. Vigliotti, and R. J. von Gutfeld

Appl. Phys. Lett. 51, 2040 (1987); http://dx.doi.org/10.1063/1.98285 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
We report new findings that relate to rapid maskless laser etching of steel and stainless steel in neutral solutions of sodium chloride, sodium nitrate, and potassium sulfate. Etch rates have been determined as a function of laser power, laser on‐time, and solution concentration. The morphology of laser‐etched holes obtained in these solutions was compared with holes obtained in pure water. Results indicate that some controlled melting occurs under certain laser conditions in addition to the metal dissolution process induced by the locally intense heat of the laser beam.
Show PACS
81.05.Bx Metals, semimetals, and alloys
79.20.Ds Laser-beam impact phenomena
68.35.B- Structure of clean surfaces (and surface reconstruction)

Precision of series‐array Josephson voltage standards

R. L. Kautz and Frances L. Lloyd

Appl. Phys. Lett. 51, 2043 (1987); http://dx.doi.org/10.1063/1.98286 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
Comparison of two series‐array Josephson voltage standards operated at over 1 V shows that they differ in voltage by less than 2 parts in 1017.
Show PACS
85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close