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21 Dec 1987

Volume 51, Issue 25, pp. 2073-2172

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Model calculations of fields related to near‐field optical scanning of a silver strip on a glass substrate

Egon Marx and E. Clayton Teague

Appl. Phys. Lett. 51, 2073 (1987); http://dx.doi.org/10.1063/1.98295 (3 pages) | Cited 3 times

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The vertical energy flux density for the electromagnetic fields near the surface of a silver strip on a glass substrate is computed for an incident plane wave to aid in the measurement of the width of the strip. The dimensions of the strip cross section, e.g., 300 nm by 100 nm, are a fraction of the wavelength of the incident light , 632.8 nm. The flux 1 nm above the surface shows sharp spikes at the edges of the strip. The features of the fields near the surface could be used for accurate determination of the width of the strip by measurements up to about 30 nm above the strip. The effects of other variables are also shown in the figures.
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42.25.Fx Diffraction and scattering
42.30.-d Imaging and optical processing
07.60.Pb Conventional optical microscopes
78.66.Bz Metals and metallic alloys

Pulsed photothermal radiometry for depth profiling of layered media

Frederick H. Long, R. Rox Anderson, and Thomas F. Deutsch

Appl. Phys. Lett. 51, 2076 (1987); http://dx.doi.org/10.1063/1.98985 (3 pages) | Cited 29 times

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Pulsed photothermal radiometry (PPTR) has been used to analyze depth profile of layered materials, including biological tissue. An analytic theory for the time dependence of the PPTR signal has been developed and compared with experimental results on inert materials and living human skin.
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07.60.Dq Photometers, radiometers, and colorimeters
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
87.80.-y Biophysical techniques (research methods)

Reduced KNbO3 crystals for fast photorefractive nonlinear optics

E. Voit, M. Z. Zha, P. Amrhein, and P. Günter

Appl. Phys. Lett. 51, 2079 (1987); http://dx.doi.org/10.1063/1.98296 (3 pages) | Cited 30 times

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Reduced KNbO3 crystals are shown to have the fastest photorefractive response times for applications in the visible wavelength region. Grating build‐up times at cw illumination in the microsecond region are reported which allow the use of such crystals for real‐time applications. The reduction treatment and a new method for the investigation of the photorefractive homogeneity during reduction are presented.
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78.20.Jq Electro-optical effects
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.40.Ht Hologram recording and readout methods
42.70.-a Optical materials

Flat‐surface buried heterostructure distributed feedback lasers operating in a single longitudinal mode at 1.5 μm with low chirp

Stefan Nilsson, Tawee Tanbun‐Ek, and Björn Broberg

Appl. Phys. Lett. 51, 2082 (1987); http://dx.doi.org/10.1063/1.98977 (3 pages) | Cited 1 time

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Distributed feedback lasers emitting in a stable dynamic single mode at 1.5 μm wavelength in a temperature range of more than 50 °C have been developed using the so‐called flat‐surface buried heterostructure. Threshold currents as low as 14 mA in cw (8 mA in pulse) operating and output powers as high as 20 mW/facet were obtained. By detuning the Bragg wavelength to the shorter wavelength side of the gain peak, and by reducing the confinement factor, a wavelength chirp as a function of modulation current as low as 0.003 nm/mA has been obtained. This value corresponds to a total chirp of 0.1–0.2 nm under normal modulation conditions.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.Fc Modulation, tuning, and mode locking

Noncontact measurement of thermal conductivity of epoxy bonds by pulsed photothermal radiometry

W. P. Leung and A. C. Tam

Appl. Phys. Lett. 51, 2085 (1987); http://dx.doi.org/10.1063/1.98955 (3 pages) | Cited 4 times

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Pulsed photothermal radiometry relies on the flash heating of a surface and the detection of the time dependence of the surface cooling by infrared radiometry. We show that this is useful as a nondestructive and noncontact technique to quantify the thermal conductivity of a subsurface epoxy bond underneath an opaque surface. The degree of curing of the epoxy can also be monitored.
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66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
07.60.Dq Photometers, radiometers, and colorimeters
81.70.-q Methods of materials testing and analysis

Collection mode near‐field scanning optical microscopy

E. Betzig, M. Isaacson, and A. Lewis

Appl. Phys. Lett. 51, 2088 (1987); http://dx.doi.org/10.1063/1.98956 (3 pages) | Cited 146 times

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Super‐resolution imaging at optical wavelengths has been achieved with collection mode near‐field scanning optical microscopy. Reproducible images of 0.25‐μm aluminum lines separated by 0.25 μm have been generated with a peak edge sharpness of 0.07 μm. Images taken with differing probe sizes and at various heights demonstrate that the smallest resolvable features are roughly determined by the greater of the aperture size and the aperture to sample separation.
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07.60.Pb Conventional optical microscopes
68.35.B- Structure of clean surfaces (and surface reconstruction)

Laser beam scanning using a local deflector integrated with an effective mode filter

S. Mukai, Y. Kaneko, M. Watanabe, H. Itoh, and H. Yajima

Appl. Phys. Lett. 51, 2091 (1987); http://dx.doi.org/10.1063/1.98957 (3 pages) | Cited 8 times

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Deflection of a diode laser beam using an injection‐type deflector monolithically integrated with a very long waveguide is demonstrated. The deflector and the waveguide constitute a laser cavity. The waveguide filters out higher order modes, and only the fundamental‐mode light is incident on the deflector. Because the incident light is of a fixed single mode, the deflection of the output beam is very smooth. The deflection mechanism is primarily due to interference between constituent modes for short deflectors, and phase‐front tilting of each mode for long deflectors.
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42.55.Mv Dye lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densities

H. Z. Chen, A. Ghaffari, H. Morkoç, and A. Yariv

Appl. Phys. Lett. 51, 2094 (1987); http://dx.doi.org/10.1063/1.98958 (3 pages) | Cited 27 times

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Single quantum well, graded refractive index separate confinement heterostucture (SQW GRINSCH) lasers with well thicknesses in the range of 65–480 Å have been grown by molecular beam epitaxy (MBE) on (100) and off of (100) by 4° toward (111) A substrates. The threshold current density appears to be independent of the well thickness in the range of 65–165 Å due to the compensating effects of volume of inversion and optical confinement. Under optimum growth conditions, the tilted substrates led to lower threshold current densities, the lowest value being 93 A/cm2 for a 520‐μm‐long cavity laser with a 125‐Å‐thick well. To our knowledge, this is by far the best ever reported threshold current density obtained in a semiconductor injection laser. Deviations from optimum growth conditions drastically increased the threshold current density on (100) substrates whereas the degradation for those on the tilted substrates was much less pronounced.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Improved optical switching extinction in three‐electrode Ti:LiNbO3 directional couplers

K. D. Choquette, L. McCaughan, and Wiley K. Smith

Appl. Phys. Lett. 51, 2097 (1987); http://dx.doi.org/10.1063/1.98959 (3 pages) | Cited 2 times

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Utilizing three electrodes and three independent voltages in Ti:LiNbO3 directional coupler optical switches, we have achieved significant improvements in switching extinction over the standard uniform Δβ configuration. The reductions in optical crosstalk vary from 3 to 24 dB for both switching states of several fabricated devices. We have observed a bar state extinction of −47.8 dB, which is the largest extinction ratio reported to date. We find that switching measurements are limited by the largest contrast ratio which can be obtained in the optical waveguides.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Gn Optical waveguides and couplers
85.60.-q Optoelectronic devices

Second‐order susceptibility of asymmetric coupled quantum well structures

J. Khurgin

Appl. Phys. Lett. 51, 2100 (1987); http://dx.doi.org/10.1063/1.98960 (3 pages) | Cited 40 times

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Second‐order susceptibility of AlxGa1−xAs/GaAs asymmetric coupled quantum well is calculated. The magnitudes of second‐harmonic and linear electro‐optic coefficients are found to be comparable to that of LiNbO3. Further progress can lead to engineering of novel synthetic nonlinear materials.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

KrF laser controlled diffuse discharge opening/closing switches using a photoelimination reaction

Osamu Kobayashi, Teruo Sasagawa, and Minoru Obara

Appl. Phys. Lett. 51, 2103 (1987); http://dx.doi.org/10.1063/1.98961 (3 pages) | Cited 8 times

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Optical control of a diffuse discharge can potentially be used to switch inductive energy storage systems at high repetition rates. A means of optical enhancement of the electron attachment process can hopefully be used as an optically controlled switch. Vinylchloride (C2H3Cl) photoeliminates a vibrationally rotationally excited HCl(v,J) which strongly attaches low‐energy electrons. In our experiment, we observed the opening and closing of a diffuse discharge in a mixture of C2H3Cl/He (C2H3Cl:He=0.7:99.3%, total pressure 1.5 Torr) by KrF laser irradiation of 5.7 mJ/cm2 (20 ns full width at half‐maximum). Under these conditions, a discharge current of 200 μA could be interrupted with a time constant of 100 μs. The discharge was again initiated by KrF laser irradiation. As a result, both discharge opening and closing by the laser irradiation were demonstrated.
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52.75.Kq Plasma switches (e.g., spark gaps)
84.60.Ve Energy storage systems, including capacitor banks
52.80.-s Electric discharges

Operation of Schottky‐barrier field‐effect transistors of 3C‐SiC up to 400 °C

H. Daimon, M. Yamanaka, M. Shinohara, E. Sakuma, S. Misawa, K. Endo, and S. Yoshida

Appl. Phys. Lett. 51, 2106 (1987); http://dx.doi.org/10.1063/1.99010 (3 pages) | Cited 11 times

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Schottky‐barrier field‐effect transistors have been fabricated from 3C‐SiC and transistor operation has been studied at temperatures up to 400 °C. B‐doped high‐resistivity and undoped n‐type 3C‐SiC epilayers were successively grown on p‐type Si substrates by chemical vapor deposition. Au and Al electrodes were used for Schottky‐barrier gate contacts and source and drain contacts for n‐type 3C‐SiC, respectively. Transconductances of 1.7 and 0.15 mS/mm were obtained at room temperature and 400 °C, respectively.
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85.30.Tv Field effect devices
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Ns Metal-nonmetal contacts

Solid phase doping of silicon with boron by surface scanning with cw CO2 laser radiation

I. Ursu, V. Crăciun, I. N. Mihăilescu, R. Medianu, Al. Popa, A. M. Prokhorov, S. G. Kiyak, A. A. Manenkov, and G. N. Mikhailova

Appl. Phys. Lett. 51, 2109 (1987); http://dx.doi.org/10.1063/1.98962 (3 pages) | Cited 2 times

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Silicon doping with boron was achieved by cw CO2 laser radiation surface scanning of n‐Si wafers (≊10 Ω cm) vacuum coated with a thin (∼100 Å) film of boron, both from the boron‐coated and from the uncoated sides. Electrical and secondary ion mass spectrometry measurements indicate that the dopant is electrically active and the p‐n junctions which are formed are very shallow (<500 Å). The values of sheet resistance versus junction depth are below any results reported in the literature.
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61.72.uf Ge and Si
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
79.20.Ds Laser-beam impact phenomena

Identification of infrared absorption peaks of amorphous silicon‐carbon alloy by thermal annealing

Wei‐Liang Lin, Hsiung‐Kuang Tsai, Si‐Chen Lee, Wen‐Jyh Sah, and Wen‐Jer Tzeng

Appl. Phys. Lett. 51, 2112 (1987); http://dx.doi.org/10.1063/1.98963 (3 pages) | Cited 25 times

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Amorphous silicon‐carbon hydrogen alloy was prepared by radio frequency glow discharge decomposition of a silane‐methane mixture. The infrared absorption spectra were measured at various stages of thermal annealing. By observing the change of relative intensities between these peaks the hydrogen bonding responsible for the absorption peaks could be assigned more accurately, for example, the stretching mode of monohydride Si–H is determined by its local environment, which supports H. Wagner’s and W. Beyer’s results [Solid State Commun. 48, 585 (1983)] but is inconsistent with the commonly believed view. It is also found that a significant fraction of carbon atoms are introduced into the film in –CH3 configuration which forms a local void and enhances the formation of polysilane chain and dangling bond defects. Only after high‐temperature annealing are the hydrogen atoms driven out, and Si and C start to form a better silicon carbide network.
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78.30.Hv Other nonmetallic inorganics
78.66.-w Optical properties of specific thin films

Resolved structure in the quenching band of the EL2 center in GaAs, studied by infrared spectroscopy

F. Fuchs and B. Dischler

Appl. Phys. Lett. 51, 2115 (1987); http://dx.doi.org/10.1063/1.98964 (3 pages) | Cited 14 times

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Infrared measurements at low temperature on undoped semi‐insulating GaAs reveal additional details in the photoresponse of the EL2 center. In the continuous spectral recording of the optical cross section for the bleaching of the EL2 absorption the zero phonon line (ZPL) at 1.039 eV and six phonon replicas with 11 meV separation have been observed. A modified Huang Rhys calculation is necessary to reproduce both the relative intensity of the ZPL and the maximum of the broad band at 1.17 eV. Using the intensity of the resolved structure for calibration, we calculate the contribution of the intracenter transition to the total EL2 absorption spectrum. Comparison with the known time constants for photoionization and quenching yields a probability of (1.2±0.3)% for transformation to the metastable state after intracenter excitation. The ZPL in the absorption spectrum shows considerable broadening and a decrease in energy by 3 meV in the temperature range 10–65 K.
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71.55.Eq III-V semiconductors
63.20.K- Phonon interactions
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Rapid thermal diffusion and ohmic contacts using zinc in GaAs and GaAlAs

Sandip Tiwari, Jeffrey Hintzman, and Alessandro Callegari

Appl. Phys. Lett. 51, 2118 (1987); http://dx.doi.org/10.1063/1.98965 (3 pages) | Cited 18 times

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We report behavior of zinc diffusion and p‐type ohmic contacts to GaAs and GaAlAs (aluminum mole fraction ∼0.3) by Zn3As2 as vapor source and zinc embedded in tungsten films as solid source using rapid thermal processing. Tungsten acts as an inert refractory metallurgy during the processing. The diffusion profiles show high surface concentrations (mid 1019 cm−3 to low 1020 cm−3) and a diffusion profile in agreement with Tuck’s model of substitutional‐interstitial diffusion in the presence of vacancy nonequilibrium. Both GaAs and GaAlAs show excellent transport properties with mobilities of 75–100 and 40–60 cm2 V−1 s−1, respectively, at room temperature. Short‐time (sub‐12‐s) diffusions lead to sub‐1000‐Å diffused contacts in the 650–900 °C temperature range with contact resistances below a measurement accuracy of 5×10−7 Ω cm2. The contact technology has been demonstrated in heterostructure bipolar transistors and p‐channel heterostructure field‐effect transistors. It is an attractive alternative to conventional gold‐based contact metallizations.
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66.30.J- Diffusion of impurities
73.40.Ns Metal-nonmetal contacts
73.40.Cg Contact resistance, contact potential
85.30.Hi Surface barrier, boundary, and point contact devices

Simulation of electron beam induced current at GaAs/AlGaAs heterojunctions under forward bias

S. Munnix and D. Bimberg

Appl. Phys. Lett. 51, 2121 (1987); http://dx.doi.org/10.1063/1.98966 (3 pages) | Cited 2 times

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The influence of the charge collecting barrier on the electron beam induced current (EBIC) is studied by numerical solution of the current transport equations in the case of AlGaAs/GaAs heterojunctions. EBIC line scans are simulated as a function of external bias. It is found that the signal cannot be reduced to zero value, in accordance with experimental results. This effect is explained by a non‐negligible potential drop outside of the space‐charge region under high injection conditions. As a consequence, a more careful treatment is needed when using EBIC to determine band offsets.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Photodegradation in hydrogenated amorphous silicon films at a high level of illumination

E. Eser and E. Urbanski

Appl. Phys. Lett. 51, 2124 (1987); http://dx.doi.org/10.1063/1.98967 (3 pages) | Cited 4 times

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The rate of photodegradation of glow discharge deposited hydrogenated amorphous silicon films was measured at temperatures between 150 and 283 K at an illumination intensity of 16AM1. Down to a certain degradation level, the experimental data fit quite well to a model where the recombination of the photogenerated carriers via a single level situated between two quasi‐Fermi levels is assumed to be responsible in generating the metastable defects. In this regime, the degradation rate constant is found to be thermally activated with an activation energy of 0.15 eV. As the degradation proceeds beyond that level, a different mechanism which is not fully analyzed here, is found to be operational.
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73.50.Pz Photoconduction and photovoltaic effects
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Formation of a shallow p+ layer on InP using a P/Be co‐implant

Kou‐Wei Wang

Appl. Phys. Lett. 51, 2127 (1987); http://dx.doi.org/10.1063/1.98968 (3 pages) | Cited 36 times

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A novel p‐type implantation using a co‐implant of phosphorus and beryllium to produce a shallow p+ surface layer is reported. The results from electrical measurement show an excellent control of the carrier profile. There is no Be in‐diffusion observed and an improvement of the electrical activation also resulted.
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61.72.U- Doping and impurity implantation
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
66.30.J- Diffusion of impurities

Electron beam epitaxy of AlxGa1−xP (a new type of solid phase epitaxy produced by a high‐energy electron beam)

Takao Wada and Yoshinobu Maeda

Appl. Phys. Lett. 51, 2130 (1987); http://dx.doi.org/10.1063/1.98969 (3 pages) | Cited 5 times

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Solid phase epitaxial layers of Al0.25Ga0.75P, Al0.5Ga0.5P, and Al0.75Ga0.25P were grown on (111), (100), and (110) GaP substrates, respectively, by using an electron beam epitaxy technique at 50 °C. The surfaces of Al layers deposited by vacuum evaporation on GaP wafers were irradiated with a fluence of (0.1–1.0)×1018 electrons cm−2 at 7 MeV. After the irradiation and removal of the Al layers, evidence of the creation of epilayers that had been formed before annealing was obtained from a secondary‐ion mass spectrometer, an x‐ray diffractometer, and a reflection high‐energy electron diffractometer.
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81.15.Np Solid phase epitaxy; growth from solid phases
68.35.Fx Diffusion; interface formation
61.80.Fe Electron and positron radiation effects
61.72.U- Doping and impurity implantation

Ultranarrow conducting channels defined in GaAs‐AlGaAs by low‐energy ion damage

A. Scherer, M. L. Roukes, H. G. Craighead, R. M. Ruthen, E. D. Beebe, and J. P. Harbison

Appl. Phys. Lett. 51, 2133 (1987); http://dx.doi.org/10.1063/1.98970 (3 pages) | Cited 33 times

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We have laterally patterned the narrowest conducting wires of two‐dimensional electron gas (2DEG) material reported to date. The depletion induced by low‐energy ion etching of GaAs‐AlGaAs 2DEG structures was used to define narrow conducting channels. We employed high voltage electron beam lithography to create a range of channel geometries with widths as small as 75 nm. Using ion beam assisted etching by Cl2 gas and Ar ions with energies as low as 150 eV, conducting channels were defined by etching only through the thin GaAs cap layer. This slight etching is sufficient to entirely deplete the underlying material without necessitating exposure of the sidewalls that results in long lateral depletion lengths. At 4.2 K, without illumination, our narrowest wires retain a carrier density and mobility at least as high as that of the bulk 2DEG and exhibit quantized Hall effects. Aharonov–Bohm oscillations are seen in rings defined by this controlled etch‐damage patterning. This patterning technique holds promise for creating one‐dimensional conducting wires of even smaller sizes.
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61.80.Jh Ion radiation effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.65.-b Surface treatments
73.61.Ey III-V semiconductors

Ultraviolet‐light‐induced deposition of gold films

Yutang Ye and Robert G. Hunsperger

Appl. Phys. Lett. 51, 2136 (1987); http://dx.doi.org/10.1063/1.98971 (3 pages) | Cited 10 times

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Gold film has been deposited by ultaviolet‐light‐induced photolysis of ammonium tetrachloroaurate/nitrocellulose film. The minimum feature size achieve is about 1 μm, and the film exhibits good adhesion. The effect of temperature on the photolyzing rate has been examined.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.50.-m Photochemistry
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Grain growth in arsenic‐implanted polycrystalline Si

L. R. Zheng, L. S. Hung, and J. W. Mayer

Appl. Phys. Lett. 51, 2139 (1987); http://dx.doi.org/10.1063/1.98972 (3 pages) | Cited 1 time

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Transmission electron microscopy and Rutherford backscattering were used with polycrystalline Si films implanted at 100 keV with 3×1016 arsenic ions/cm2. During annealing, grain growth occurred first in the implanted portion, then arsenic diffused into the unimplanted poly‐Si, and finally grain growth occurred in this region. We believe that arsenic in the implanted region accumulates on grain boundaries during grain growth and subsequently diffuses along grain boundaries into the unimplanted region where grain growth occurs when arsenic can diffuse into the interior of the polycrystalline Si grains.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
66.30.J- Diffusion of impurities

Deposition of amorphous SiNxH films on InP in the presence of AsH3

B. Commère, M. C. Habrard, S. K. Krawczyk, and J. C. Bruyère

Appl. Phys. Lett. 51, 2142 (1987); http://dx.doi.org/10.1063/1.98973 (2 pages) | Cited 2 times

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Hydrogenated amorphous silicon nitride (a‐SiNxH) films have been deposited on InP substrates by the low‐temperature (185 °C) plasma enhanced chemical vapor deposition technique in order to realize metal‐insulator‐semiconductor capacitors. It has been found that the electronic properties of the InP‐insulator interface are greatly improved if the insulator deposition is carried out in the presence of AsH3 during the first stage of the process (interface state density in the range of a few 1011 eV−1 cm−2 in the upper part of the gap). The deposited films exhibit very high resistivity (1017 Ω cm) and high breakdown voltage (3×106 V/cm). In similar conditions, no beneficial effect of PH3 during the deposition has been noticed.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Ng Insulators
77.22.Jp Dielectric breakdown and space-charge effects

Epitaxy of orthorhombic gadolinium disilicide on 〈100〉 silicon

I. Geröcs, G. Molnár, E. Jároli, E. Zsoldos, G. Petö, J. Gyulai, and E. Bugiel

Appl. Phys. Lett. 51, 2144 (1987); http://dx.doi.org/10.1063/1.98974 (2 pages) | Cited 9 times

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Epitaxial orthorhombic GdSi2 was grown by in situ vacuum annealing of a 50‐nm Gd layer on 〈100〉 silicon. The epitaxy was proved by x‐ray diffraction, electron diffraction, and ion channeling measurements. The lattice mismatch between the orthorhombic GdSi2 and 〈100〉 silicon substrate was found to be 4%.
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81.15.Np Solid phase epitaxy; growth from solid phases
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
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