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28 Dec 1987

Volume 51, Issue 26, pp. 2181-2265

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Heteroepitaxial growth of Cd1−xMnxTe on GaAs by metalorganic chemical vapor deposition

Akbar Nouhi and Richard J. Stirn

Appl. Phys. Lett. 51, 2251 (1987); http://dx.doi.org/10.1063/1.98927 (3 pages) | Cited 17 times

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In this letter we report on preliminary results of heteroepitaxial growth of the dilute magnetic semiconductor alloy Cd1−xMnxTe on GaAs by metalorganic chemical vapor deposition. Dimethylcadmium (DMCd), diethyltellurium (DETe), and tricarbonyl (methylcyclopentadienyl) manganese (TCPMn) were used as source materials. The TCPMn had to be heated to as high as 140 °C to provide the required vapor pressure. Films with Mn atomic fractions up to 30% have been grown over the temperature range 410–450 °C. Results of optical absorption/transmission, photoluminescence, and x‐ray diffraction measurements are presented along with a scanning electron micrograph showing good surface morphology of the grown layers.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)

Laser writing of copper lines from metalorganic films

A. Gupta and R. Jagannathan

Appl. Phys. Lett. 51, 2254 (1987); http://dx.doi.org/10.1063/1.98928 (3 pages) | Cited 33 times

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Direct writing of high‐purity copper lines has been achieved by photothermal decomposition of copper formate films under ambient conditions using a focused argon ion laser (514 nm) beam on a scanning quartz or silicon substrate. The fast decomposition kinetics of the precursor allows use of writing speeds as high as 1 cm/s for deposition of micron‐thick copper films. There is negligible oxidation of the copper after decomposition in the presence of air due to the rapid heating and cooling of the deposit during laser writing.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
79.20.Kz Other electron-impact emission phenomena
81.05.Bx Metals, semimetals, and alloys
82.50.-m Photochemistry

Generation of divacancies in tin‐doped silicon

B. G. Svensson, J. Svensson, J. L. Lindström, G. Davies, and J. W. Corbett

Appl. Phys. Lett. 51, 2257 (1987); http://dx.doi.org/10.1063/1.98902 (3 pages) | Cited 23 times

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Czochralski‐grown tin‐doped silicon samples have been irradiated by 2 MeV electrons at room temperature. The concentration of divacancies is studied as a function of bombardment dose, and as a function of temperature during a subsequent isochronal annealing. The results are compared with that for a control sample and the role of direct generation versus vacancy‐vacancy pairing for divacancy formation is discussed.
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61.80.Fe Electron and positron radiation effects
61.72.Bb Theories and models of crystal defects
61.72.jd Vacancies
61.72.jj Interstitials

InGaAsP/InP high‐power semi‐insulating blocked planar buried‐heterostructure lasers grown entirely by atmospheric organometallic vapor phase epitaxy

B. I. Miller, U. Koren, R. J. Capik, and Y. K. Su

Appl. Phys. Lett. 51, 2260 (1987); http://dx.doi.org/10.1063/1.98903 (3 pages) | Cited 2 times

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High‐power semi‐insulating blocked planar buried‐heterostructure (SIPBH) lasers were grown entirely by atmospheric organometallic vapor phase epitaxy (OMVPE) by using a novel dilution scheme for the trimethylgallium and AsH3. Current thresholds as low as 20 mA and differential quantum efficiencies ≥20% per facet at 1.3 and 1.5 μm were obtained with power outputs of about 25 mW/facet. These results are similar to SIPBH lasers where liquid phase epitaxy was used to grow the active layer, but because of the better planarity and uniformity of OMVPE‐grown material, it appears possible to grow material that can give a high yield of distributed feedback lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Low‐temperature process for the preparation of high Tc superconducting thin films

Hideaki Adachi, Kumiko Hirochi, Kentaro Setsune, Makoto Kitabatake, and Kiyotaka Wasa

Appl. Phys. Lett. 51, 2263 (1987); http://dx.doi.org/10.1063/1.98904 (3 pages) | Cited 56 times

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We have established the low‐temperature process for the preparation of high Tc superconducting films by rf magnetron sputtering. The films were deposited at a temperature (650 °C) lower than the tetragonal‐orthorhombic transition point with sufficient crystallizing and oxidizing conditions. The as‐deposited Er‐Ba‐Cu‐O film on MgO exhibited a sharp superconductive transition with zero resistance at 86 K. This process prevented diffusion at the film and substrate interface and reduced the porous structure in the films.
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74.78.-w Superconducting films and low-dimensional structures
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
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