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20 Jul 1987

Volume 51, Issue 3, pp. 149-206


Optical properties of transparent and heat reflecting ZnO:Al films made by reactive sputtering

Z.‐C. Jin, I. Hamberg, and C. G. Granqvist

Appl. Phys. Lett. 51, 149 (1987); http://dx.doi.org/10.1063/1.99008 (3 pages) | Cited 27 times

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Heavily doped ZnO:Al films were made by dual‐target reactive magnetron sputtering. Spectrophotometry in the 0.3–50 μm range proved that the films were suitable for energy‐efficient windows. The optical data could be reconciled with a theory involving a free‐electron gas damped by ionized impurity scattering.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology

Observation of optical Stark effect in InGaAs/InP multiple quantum wells

K. Tai, J. Hegarty, and W. T. Tsang

Appl. Phys. Lett. 51, 152 (1987); http://dx.doi.org/10.1063/1.98905 (3 pages) | Cited 34 times

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We report an experimental observation of a blue shift in the n=1 heavy‐hole exciton line of In0.53Ga0.47As/InP multiple quantum wells resulting from a picosecond photoexcitation in the transparent spectral region. The temporal response of this shift follows the excitation and it is attributed to the optical Stark effect. The shift was measured to be 0.19 meV for an incident light with a photon energy 20 meV below the exciton peak and with a 10‐MW/cm2 intensity.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Low‐threshold and wide‐bandwidth 1.3 μm InGaAsP buried crescent injection lasers with semi‐insulating current confinement layers

W. H. Cheng, C. B. Su, K. D. Buehring, J. W. Ure, D. Perrachione, D. Renner, K. L. Hess, and S. W. Zehr

Appl. Phys. Lett. 51, 155 (1987); http://dx.doi.org/10.1063/1.98906 (3 pages) | Cited 3 times

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A hybrid growth technique has been used to fabricate low‐threshold, high‐modulation bandwidth, and high‐power 1.3 μm InGaAsP buried crescent injection lasers. The technique involves a first growth of an Fe‐doped semi‐insulating current confinement layer by low‐pressure metalorganic chemical vapor deposition followed by a liquid phase epitaxy regrowth. The lasers have cw threshold currents as low as 10 mA at 25 °C, total differential quantum efficiency over 50%, high‐temperature operation up to 100 °C, and output power more than 33 mW/facet. A 3‐dB modulation bandwidth of 8.4 GHz has been achieved at 5 mW/facet.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Nondestructive characterization of multilayer structures by resonant attenuated total reflection spectroscopy

Bruno Bosacchi, Robert C. Oehrle, and Eric Grosse

Appl. Phys. Lett. 51, 158 (1987); http://dx.doi.org/10.1063/1.98907 (3 pages) | Cited 1 time

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A new technique for the nondestructive characterization of semiconductor heterostructures is presented. The technique consists of a measurement of the attenuated total reflection (ATR) spectrum of the structure. This spectrum is characterized by sharp interference patterns and deep resonance minima, corresponding to the excitation of various resonant modes. From the analysis of the ATR spectrum, detailed information can be obtained on the geometrical and compositional parameters of the structure. The technique, which is nondestructive and fast, is a natural candidate for general use in semiconductor technology (microelectronics, optoelectronics, integrated optics). To illustrate its potential, we discuss its application to the case of the thickness characterization of the wafers used to manufacture GaAlAs heterostructure lasers.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
07.60.Hv Refractometers and reflectometers
81.70.-q Methods of materials testing and analysis

Femtosecond dynamics of highly excited carriers in AlxGa1−xAs

W. Z. Lin, J. G. Fujimoto, E. P. Ippen, and R. A. Logan

Appl. Phys. Lett. 51, 161 (1987); http://dx.doi.org/10.1063/1.98908 (3 pages) | Cited 36 times

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Femtosecond transient absorption saturation measurements are used to investigate the scattering of optically excited carriers in AlGaAs. With pulses as short as 35 fs at 1.98 eV, scattering times ranging from 13 to 330 fs are observed in samples of AlxGa1−xAs with x=0, 0.1, 0.2, 0.3, and 0.4. A dramatic decrease in the rate of carrier scattering out of the initial optically excited states is observed with increasing Al concentration.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
72.20.Dp General theory, scattering mechanisms

Narrow‐linewidth, electro‐optically tunable InGaAsP‐Ti:LiNbO3 extended cavity laser

F. Heismann, R. C. Alferness, L. L. Buhl, G. Eisenstein, S. K. Korotky, J. J. Veselka, L. W. Stulz, and C. A. Burrus

Appl. Phys. Lett. 51, 164 (1987); http://dx.doi.org/10.1063/1.98909 (3 pages) | Cited 10 times

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We report an electro‐optically tunable, single‐frequency extended cavity laser with a linewidth of less than 60 kHz. The laser consists of a 1.5‐μm InGaAsP gain medium and an electro‐optically tunable, narrow‐band Ti:LiNbO3 wavelength filter (Δλ≊12 Å). Electro‐optic tuning over at least 70 Å and single‐frequency operation with output power of more than 1 mW have been demonstrated. The laser linewidth was measured by beating the laser against a 1.523‐μm HeNe laser.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Atomic arsenic detection by ArF laser‐induced fluorescence

Gary S. Selwyn

Appl. Phys. Lett. 51, 167 (1987); http://dx.doi.org/10.1063/1.98910 (2 pages) | Cited 2 times

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Arsenic atoms sputtered from gallium arsenide wafers or arsenic‐doped n‐type silicon wafers have been detected in argon plasmas using the laser‐induced fluorescence technique (LIF). Two methods of LIF detection were employed. One used a tunable, frequency‐doubled dye laser to pump a metastable transition of atomic arsenic at 228.81 nm. The second technique used the broadband output of an ArF excimer laser to pump a ground‐state transition of As at 193.76 nm.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.25.Vy Impurities in plasmas
52.40.Hf Plasma-material interactions; boundary layer effects
32.50.+d Fluorescence, phosphorescence (including quenching)

Low‐temperature transport properties of ultrathin CoSi2 epitaxial films

P. A. Badoz, A. Briggs, E. Rosencher, F. Arnaud d’Avitaya, and C. d’Anterroches

Appl. Phys. Lett. 51, 169 (1987); http://dx.doi.org/10.1063/1.98911 (3 pages) | Cited 36 times

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Low‐temperature transport measurements (down to 18 mK) are performed in CoSi2 ultrathin films (down to 1.4 nm) epitaxially grown on silicon substrates. The low‐temperature residual resistivity exhibits little dependence on the CoSi2 film thickness down to 10 nm. However, a steep increase is found below 10 nm, which is not taken into account by the Fuchs–Sondheimer [Proc. Cambridge Philos. Soc. 34, 100 (1938)] boundary scattering theory. Correlatively, the superconducting critical temperature of these CoSi2 films is abruptly depressed in the same thickness range. These two effects are phenomenologically explained by the presence of a perturbed layer, i.e., a CoSi2 interfacial layer in which the electronic transport properties are dramatically diminished.
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73.50.Bk General theory, scattering mechanisms
73.61.At Metal and metallic alloys
74.78.-w Superconducting films and low-dimensional structures
74.10.+v Occurrence, potential candidates

Damage annealing behavior of 3 MeV Si+‐implanted silicon

A. K. Rai, J. Baker, and D. C. Ingram

Appl. Phys. Lett. 51, 172 (1987); http://dx.doi.org/10.1063/1.98912 (3 pages) | Cited 12 times

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Cross‐sectional transmission electron microscopy has been used to study the recrystallization behavior of a buried amorphous layer in 3 MeV Si+‐implanted (100) silicon at a dose of 5×1015 cm−2. The lower (deeper) amorphous/crystalline (a/c) interface is found to be more abrupt compared to the upper (closer to the surface) a/c interface. During recrystallization similar rates of advancement of the two a/c interfaces are observed. V‐shaped dislocations are observed in the completely recrystallized layer. The defect density in the upper recrystallized region is found to be higher than that in the lower recrystallized region. These observations are correlated with the shape of the damage profile. The secondary defects grown at higher temperatures (>750 °C) are found to be very stable and difficult to anneal out. The overall recrystallization behavior of the buried amorphous layer is found to be similar to that of lower energy implants.
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61.80.Jh Ion radiation effects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.uf Ge and Si
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Tight‐binding theory of force constant models

Mark van Schilfgaarde and Arden Sher

Appl. Phys. Lett. 51, 175 (1987); http://dx.doi.org/10.1063/1.98913 (2 pages)

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A theory of force constant models is derived for tetrahedral semiconductors from Harrison’s [Phys. Rev. B 27, 3592 (1983)] tight‐binding theory. A relation between the three independent elastic constants is derived that is independent of the detailed form of the matrix elements. This relation provides an approximate, but ab initio, theory on which two‐parameter force constant models can be based. The universal matrix elements of Harrison are also found to describe remarkably well the magnitude of the elastic constants and their scaling from one material to another. Analytic forms for c11 and c44 are given in terms of the matrix elements.
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62.20.D- Elasticity
61.50.Lt Crystal binding; cohesive energy
71.10.-w Theories and models of many-electron systems

Photoemission study of sputter‐etched InP surfaces

W. M. Lau, R. N. S. Sodhi, B. J. Flinn, K. H. Tan, and G. M. Bancroft

Appl. Phys. Lett. 51, 177 (1987); http://dx.doi.org/10.1063/1.98914 (3 pages) | Cited 26 times

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The effects of sputter etching and subsequent surface treatments including thermal annealing and oxygen exposure on n‐InP surfaces have been studied by measuring the photoemission spectra using both Al Kα and synchrotron radiation. Results indicate that sputtering with Ar+ at 1–3 keV and low current density leaves an In‐rich surface (In/P=2) and, from the movement of the Fermi level relative to the conduction‐band minimum, is seen to introduce acceptor‐type defects. Annealing of the surface causes dissolution of some excess In into the bulk as well as removal of some of these defects. The behavior of the annealed surface to oxygen exposure is similar to that of the cleaved surface with the creation of donor defects.
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81.65.-b Surface treatments
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.35.Dv Composition, segregation; defects and impurities

Modulation‐doped multiquantum wells in InP/In0.53Ga0.47As grown by atmospheric pressure metalorganic chemical vapor deposition

L. L. Taylor, M. J. Kane, and S. J. Bass

Appl. Phys. Lett. 51, 180 (1987); http://dx.doi.org/10.1063/1.98915 (3 pages) | Cited 8 times

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Here we present the first report of electrical transport measurements (Hall effect and Shubnikov de Haas) on modulation‐doped InP/In0.53Ga0.47As multiquantum wells grown by atmospheric pressure metalorganic chemical vapor deposition. Measurements were made on samples containing from 4 to 50 doped quantum wells. The carrier density per well was observed to be constant, approximately 1×1012 cm−2 independent of the number of wells, with 4 K mobilities from 70 000 to 90 000 cm2 V−1 s−1. Very little persistent photoconductivity was observed in any of the multiple quantum well structures.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Be incorporation in heavily doped molecular beam epitaxy grown GaAs: Evidence of nonradiative behavior by cathodoluminescence and electron acoustic measurements

J. F. Bresse and A. C. Papadopoulo

Appl. Phys. Lett. 51, 183 (1987); http://dx.doi.org/10.1063/1.98916 (3 pages) | Cited 11 times

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Cathodoluminescence and electroacoustic detection have been used for the characterization of Be‐doped GaAs epilayers grown by molecular beam epitaxy for the doping levels greater than 6.5×1017 at. cm−3. The Be concentration dependence of cathodoluminescence intensity as well as electron acoustic intensity shows the presence of nonradiative centers for concentrations greater than 1018 at. cm−3. Besides, extended defects and doping striations are revealed by electron acoustic images for heavily Be‐doped GaAs (1020 at. cm−3).
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.60.Hk Cathodoluminescence, ionoluminescence
79.20.Kz Other electron-impact emission phenomena

Capless rapid thermal annealing of Si+‐implanted InP

J. D. Woodhouse, M. C. Gaidis, J. P. Donnelly, and C. A. Armiento

Appl. Phys. Lett. 51, 186 (1987); http://dx.doi.org/10.1063/1.98917 (3 pages) | Cited 11 times

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An enhanced‐overpressure capless annealing technique suitable for annealing ion‐implanted InP at temperatures of 900 °C is described. The technique utilizes a Sn‐coated InP wafer and is based on the same principle as the In‐Sn‐P liquid‐solution method for eliminating InP surface degradation prior to epitaxial growth. InP samples implanted with 140 keV, 1014 cm−2 Si+ and annealed at 900 °C for 10 s exhibited improved electrical characteristics over samples annealed at 750 °C for 5 min using conventional encapsulation techniques.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Rs Electrical and magnetic properties related to treatment conditions
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Effects of interface reactions on electrical characteristics of metal‐GaAs contacts

K. M. Yu, W. Walukiewicz, J. M. Jaklevic, E. E. Haller, and T. Sands

Appl. Phys. Lett. 51, 189 (1987); http://dx.doi.org/10.1063/1.98918 (3 pages) | Cited 14 times

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Solid‐state interface reactions between metal thin films and (100) GaAs substrates at elevated temperatures are studied by conventional and heavy‐ion Rutherford backscattering spectrometry, x‐ray diffraction, and transmission electron microscopy. Metals investigated in this study include Pt, Pd, Ni, Co, Rh, and W. Electrical properties of the metal/n‐GaAs diodes undergoing annealing treatments at various temperatures were also measured with the current‐voltage dependence. Optimum diodes with maximum barrier heights as well as minimum leakage currents are obtained for diodes annealed at temperatures at which a uniform thin layer of reacted phase is observable at the interface. The barrier heights of the optimum diodes show a linear dependence on the work functions of the various metals. The range of these barrier heights is limited by nonstoichiometry related defects as suggested by a recently proposed amphoteric native defect model.
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73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
73.40.Ei Rectification

Raman study of an epitaxial GaAs layer on a Si [100] substrate

Yihe Huang, Peter Y. Yu, Marie‐Noelle Charasse, Yuhua Lo, and Shyh Wang

Appl. Phys. Lett. 51, 192 (1987); http://dx.doi.org/10.1063/1.98919 (3 pages) | Cited 35 times

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A bevel has been etched in a GaAs epitaxial film grown on a Si substrate, so that the Raman spectrum of the GaAs layers can be measured as a function of distance from the GaAs/Si interface. The amount of strain and disorder in the GaAs film has been estimated from the GaAs longitudinal optical phonon line shape and frequency. Both the strain and the amount of disorder were found to decrease with increase in the distance from the interface.
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78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.60.Bs Mechanical and acoustical properties
68.35.Ja Surface and interface dynamics and vibrations

Electrical characteristics of Al/ZnS/p‐p+ Si diodes

C. B. Thomas, D. Sands, and K. Brunson

Appl. Phys. Lett. 51, 195 (1987); http://dx.doi.org/10.1063/1.98920 (2 pages) | Cited 2 times

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The electrical characteristics of Al/ZnS/p‐Si diodes have been investigated. The behavior is shown to be very similar to that of the tin oxide /ZnS/p‐n+ diodes used previously for electroluminescent diodes indicating that current through the ZnS is limited by the rate of generation of minority carriers in the p‐Si. The fact that the current is limited is the surest indication that no breakdown is occurring either in the ZnS or the silicon. These results are discussed, both in the context of device manufacture and in the context of a recent theory of breakdown in electroluminescent diodes.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.60.Jb Light-emitting devices
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Increase of effective viscosity of molten GaAs and InSb under an axial magnetic field

Shoichi Ozawa, Minoru Eguchi, Takashi Fujii, and Tsuguo Fukuda

Appl. Phys. Lett. 51, 197 (1987); http://dx.doi.org/10.1063/1.98921 (3 pages) | Cited 5 times

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We have measured the effective dynamic viscosity of molten GaAs and InSb as a function of axial magnetic field by the oscillating vessel method. Effective viscosity of these semiconductor melts is observed to increase with the axial magnetic field intensity in the range of 0 to 5 kG.
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66.20.-d Viscosity of liquids; diffusive momentum transport

Quantum interference devices made from superconducting oxide thin films

R. H. Koch, C. P. Umbach, G. J. Clark, P. Chaudhari, and R. B. Laibowitz

Appl. Phys. Lett. 51, 200 (1987); http://dx.doi.org/10.1063/1.98922 (3 pages) | Cited 152 times

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We have fabricated superconducting quantum interference devices (dc SQUID’s) from thin films of the superconducting oxide YBa2Cu3Oy. The devices were made by first lithographically patterning an ion implant mask containing a 40 by 40 μm loop and two 17‐μm‐wide weak links over a ∼1‐μm‐thick oxide film. Ion implantation was then used to destroy the superconductivity in the film surrounding the device without actually removing material, resulting in a completely planar structure for the SQUID’s. The SQUID’s were operated in the temperature range from 4.2 to 68 K. The superconducting flux quantum was measured to be h/2e in these materials.
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85.25.-j Superconducting devices
74.78.-w Superconducting films and low-dimensional structures
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
81.40.Rs Electrical and magnetic properties related to treatment conditions

High TC superconductors—composite wire fabrication

S. Jin, R. C. Sherwood, R. B. van Dover, T. H. Tiefel, and D. W. Johnson

Appl. Phys. Lett. 51, 203 (1987); http://dx.doi.org/10.1063/1.98923 (2 pages) | Cited 94 times

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Commercially useful, bulk superconductors typically require stabilization using a normal metal cladding for reasons of electrical, thermal, and mechanical protection and, in general, need to be drawn into fine fibers and wound into a magnet configuration. The recent discovery of high‐TC superconductor materials such as Ba2YCu3O7 stimulated worldwide interest in the subject, however, with much concern about fabricability of such brittle ceramic materials into desirable fine wire geometry. In this letter, we report preliminary success in the fabrication of fine‐wire, composite superconductors consisting of a high‐conductivity normal metal shell such as Ag or Cu/Ni/Au and a superconducting core of Ba2YCu3O7 oxide. The wire is would into a coil, and then heat treated to produce the desired chemistry in a dense structure. The resistivity of the composite wire is measured to be zero at ≊90 K (in zero field) with a zero‐field critical density of ≊175 A/cm2. Microscopy and x‐ray analysis show that the superconducting core is continuous, and retains phase composition after wire drawing and heat treatment. These results demonstrate the feasibility of producing superconducting ceramic composite wire, although the practical applications must await the resolution of many practical problems and reliability issues.
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84.32.Hh Inductors and coils; wiring
85.25.-j Superconducting devices
81.05.Mh Cermets, ceramic and refractory composites
81.40.Rs Electrical and magnetic properties related to treatment conditions

Neutron diffraction study of artificial CoO‐NiO superlattices

M. Takano, T. Terashima, Y. Bando, and H. Ikeda

Appl. Phys. Lett. 51, 205 (1987); http://dx.doi.org/10.1063/1.98924 (2 pages) | Cited 27 times

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Neutron diffraction measurements were made on artificial superlattices of CoO‐NiO, (CoO)m(NiO)n×l prepared on the (0001) surface of α‐Al2O3. (111) layers of CoO and NiO, each less than 2 nm thick (2≤m,n≤8), were stacked alternatively to a total thickness of less than 70 nm (m+n≤15,l≤25). A well‐defined magnetic Bragg peak indexed as (1/2 1/2 1/2) was observed for all the samples, and a magnetic structure of type FCC2 with the spin axis lying in the (111) planes grown was suggested. The temperature dependence of the magnetic peak intensity revealed a sharp, single magnetic transition. The Néel temperature was found to vary as a linear function of n/(m+n).
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
75.50.Ee Antiferromagnetics
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