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27 Jul 1987

Volume 51, Issue 4, pp. 209-290

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Transport and structural properties of the Ho1Ba2Cu3O9−δ superconductor

Sung‐Ik Lee, John P. Golben, Yi Song, Sang Young Lee, Tae W. Noh, Xiao‐dong Chen, Joe Testa, J. R. Gaines, and Rodney T. Tettenhorst

Appl. Phys. Lett. 51, 282 (1987); http://dx.doi.org/10.1063/1.98473 (3 pages) | Cited 2 times

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The compound Ho1Ba2Cu3O9−δ has been found to be a high Tc superconductor. The onset of the superconducting transition is 88 K with zero resistance achieved at 87 K. The x‐ray diffraction spectrum of this material shows it to be a single‐phase perovskite similar to the Y1Ba2Cu3O9−δ compound but different from the K2NiF4 perovskite which is believed to be the superconducting phase for the La2(1−x) Ba2xCuO4−δ system. Possible oxygen deficiencies in several of the unit cell planes are discussed. The room‐temperature resistance, the superconducting onset temperature, and the emergence of the single phase all depend upon the sample preparation firing conditions.
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74.70.-b Superconducting materials other than cuprates
61.66.Fn Inorganic compounds
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

Epitaxial Fe films on (100)GaAs substrates by ion beam sputtering

Randal W. Tustison, Thomas Varitimos, Jerrold Van Hook, and Ernst F. Schloemann

Appl. Phys. Lett. 51, 285 (1987); http://dx.doi.org/10.1063/1.98474 (3 pages) | Cited 19 times

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We report the successful growth of single‐crystal Fe films on GaAs substrates in (100) orientation by ion beam sputtering. Magnetic measurements show that the crystalline anisotropy field of these films is substantially the same as that of bulk single crystals.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Kk Vapor phase epitaxy; growth from vapor phase
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

High performance magneto‐optical TbFeCo disks prepared by coevaporation

Sung‐Chul Shin

Appl. Phys. Lett. 51, 288 (1987); http://dx.doi.org/10.1063/1.98475 (3 pages) | Cited 4 times

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We have prepared high performance TbFeCo magneto‐optical recording media by coevaporation. A carrier‐to‐noise ratio (CNR) of about 60 dB, measured with a 30‐kHz slot bandwidth, was obtained and a CNR was limited mainly by shot noise. It was found that the threshold laser power in these media linearly increased with a slope of 0.3 mW/kOe as the coercivity increased.
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42.79.Vb Optical storage systems, optical disks
78.20.Ls Magneto-optical effects
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