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24 Aug 1987

Volume 51, Issue 8, pp. 555-627


Optical multistability and phase conjugation fidelity in a high‐birefringence optical fiber

S. Trillo and S. Wabnitz

Appl. Phys. Lett. 51, 555 (1987); http://dx.doi.org/10.1063/1.98345 (3 pages) | Cited 2 times

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We derive an exact solution including pump depletion of collinear four‐wave mixing in a birefringent Kerr medium. We find mirrorless optical multistability for a linearly polarized backscattered signal with orthogonal pumps at cw power levels using a few meters of polarization‐maintaining silica fiber. An expression for the nonlinear phase distortion of ideal phase conjugation is obtained, showing a fundamental limitation to generating time‐reversed wave fronts using Kerr nonlinearity.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.81.Gs Birefringence, polarization
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Low‐threshold gain‐guided coupled‐stripe quantum well diode lasers by laser‐assisted processing

J. E. Epler, R. D. Burnham, and T. L. Paoli

Appl. Phys. Lett. 51, 558 (1987); http://dx.doi.org/10.1063/1.98346 (3 pages) | Cited 3 times

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The first coupled‐stripe laser diodes fabricated by a laser‐assisted process are reported. In this process, a focused laser beam is scanned across AlGaAs‐GaAs heterostructure material to pattern a shallow resistive region in the GaAs cap layer. In this manner, the distribution of the injected current is patterned to fabricate gain‐guided four‐stripe diode lasers. The devices operate continuously (cw) at room temperature with a low threshold current (36 mA) and high differential quantum efficiency (80%). A maximum cw power efficiency of 48% is obtained at 350 mA. The gain‐guided structure favors the lower order array modes, thus the far‐field pattern is dominated by a central lobe.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Whole‐sample and localized induced‐absorption optical bistability in GaAlAs waveguides

J. S. Aitchison, J. D. Valera, A. C. Walker, S. Ritchie, P. M. Rodgers, P. McIlroy, and G. I. Stegeman

Appl. Phys. Lett. 51, 561 (1987); http://dx.doi.org/10.1063/1.98347 (3 pages) | Cited 6 times

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Induced‐absorption optical bistability has been studied in GaAlAs heterostructure rib and slab waveguides. Both whole‐sample and localized switching have been observed within the same device. The localized switch, which occurs on the time scale of a few microseconds and at an input power of 10–20 mW, has been induced using a laser‐diode source.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Gn Optical waveguides and couplers
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Efficient holmium:yttrium lithium fluoride laser longitudinally pumped by a semiconductor laser array

H. Hemmati

Appl. Phys. Lett. 51, 564 (1987); http://dx.doi.org/10.1063/1.98348 (2 pages) | Cited 11 times

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Optical pumping of a holmium:yttrium lithium fluoride (Ho:YLF) crystal with a 790‐nm continuous‐wave diode‐laser array has generated 56 mW of 2.1 μm laser radiation with an optical‐to‐optical conversion slope efficiency of 33% while the crystal temperature is held at 77 K. The lasing threshold occurs at 7 mW of input power, and laser operation continues up to a crystal temperature of 124 K.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Rz Doped-insulator lasers and other solid state lasers

Volume production of Li− in a small multicusp ion source

S. R. Walther, K. N. Leung, and W. B. Kunkel

Appl. Phys. Lett. 51, 566 (1987); http://dx.doi.org/10.1063/1.98349 (3 pages) | Cited 10 times

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Negative lithium ions, generated by volume processes, have been extracted from a small magnetically filtered multicusp ion source. Current densities of 1.9 mA/cm2 have been obtained with a discharge voltage of 40 V and a discharge current of 4 A.
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52.50.Dg Plasma sources
52.75.-d Plasma devices

Observation of shock waves and cooling waves in the laser ablation of Kapton films in air

G. Koren

Appl. Phys. Lett. 51, 569 (1987); http://dx.doi.org/10.1063/1.98350 (3 pages) | Cited 29 times

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Deflections of a He‐Ne laser beam in excimer and CO2 laser‐produced plumes from Kapton films were measured. They show that in addition to the existence of a shock wave observed earlier, a slower cooling wave is also developed. A model calculation is presented which explains the present experimental data as well as previous results regarding the decrease of etching efficiency with increasing ambient gas pressure.
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52.35.Tc Shock waves and discontinuities
79.20.Ds Laser-beam impact phenomena
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments

Selectively enhanced silicide formation by a gold interlayer: Probing the dominant diffusing species and reaction mechanisms during thin‐film reactions

Chin‐An Chang and Jerng‐Sik Song

Appl. Phys. Lett. 51, 572 (1987); http://dx.doi.org/10.1063/1.98351 (3 pages) | Cited 7 times

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Formation of silicides in the presence of a thin gold interlayer is studied, making use of the rapid outdiffusion of Si through gold. With Si being the dominant diffusing species, an enhanced rate is expected, as observed for PtSi, Fe3Si, CoSi, and MoSi2. No enhancement is expected when metal is the dominant diffusing species, in agreement with the results on Pt2Si, Co2Si, and Ni2Si. Such studies thus provide valuable information regarding reaction mechanisms.
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68.35.Fx Diffusion; interface formation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
66.30.Ny Chemical interdiffusion; diffusion barriers

Resonant Zener tunneling of electrons between valence‐band and conduction‐band quantum wells

Jeremy Allam, Fabio Beltram, Federico Capasso, and Alfred Y. Cho

Appl. Phys. Lett. 51, 575 (1987); http://dx.doi.org/10.1063/1.98352 (3 pages) | Cited 10 times

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We report the observation of resonant tunneling effects at high applied fields in the reverse‐bias current‐voltage characteristic of multiple quantum well p‐i‐n diodes. The Al0.48In0.52As/Ga0.47In0.53As structure (grown by molecular beam epitaxy with 35 periods of 139 Å barriers and 139 Å wells) shows two steps in the dark current. These are associated with Zener tunneling of electrons across the band gap from the lowest subband in the valence‐band quantum wells to the first and second subbands of adjacent conduction‐band wells.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Hi Surface barrier, boundary, and point contact devices
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Electric field induced shifts in exciton luminescence in ZnSe/(Zn,Mn)Se superlattices

Qiang Fu, A. V. Nurmikko, L. A. Kolodziejski, R. L. Gunshor, and J.‐W. Wu

Appl. Phys. Lett. 51, 578 (1987); http://dx.doi.org/10.1063/1.98353 (3 pages) | Cited 13 times

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Application of moderate electric fields to ZnSe/(Zn,Mn)Se quantum wells yields distinct spectral shifts of the recombining exciton luminescence. This shows that confinement effects in this heterostructure are sufficient to increase the exciton ionization threshold. At high applied fields and low temperatures, injection of hot electrons from the n+GaAs/ZnSe heterojunction at our substrate/buffer layer excites yellow luminescence from internal transitions of the Mn ion in (Zn,Mn)Se layers.
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78.55.Cr III-V semiconductors
71.35.-y Excitons and related phenomena
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Layer interdiffusion in Se‐doped AlxGa1−xAs‐GaAs superlattices

D. G. Deppe, N. Holonyak, K. C. Hsieh, P. Gavrilovic, W. Stutius, and J. Williams

Appl. Phys. Lett. 51, 581 (1987); http://dx.doi.org/10.1063/1.98354 (3 pages) | Cited 38 times

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Transmission electron microscopy and carrier concentration measurements are used to characterize the layer interdiffusion (Al‐Ga interdiffusion) mechanism of a Se‐doped AlxGa1−xAs‐GaAs superlattice (SL) under high‐temperature annealing. By varying the annealing environment and comparing the results with similarly annealed undoped SL’s and Mg‐doped SL’s, we find that the layer interdiffusion occurs through interaction of the Se impurity with native defects associated with As‐rich conditions, the most likely of which is the column III vacancy.
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68.35.Fx Diffusion; interface formation
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Subpicosecond dynamics of electron injection into GaAs/AlGaAs quantum wells

S. M. Goodnick and P. Lugli

Appl. Phys. Lett. 51, 584 (1987); http://dx.doi.org/10.1063/1.98355 (3 pages) | Cited 27 times

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We model the subpicosecond evolution of a nonthermal electron distribution injected into a GaAs/AlGaAs quantum well using an ensemble Monte Carlo simulation which includes electron‐electron scattering. The calculated results are in good agreement with the experimental time dependence of the carrier distribution function from recent bleaching experiments with carrier‐carrier scattering the dominant mechanism contributing to band filling.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Bk General theory, scattering mechanisms
73.50.Fq High-field and nonlinear effects
73.61.Ey III-V semiconductors

Inhomogeneous lattice distortion in the heteroepitaxy of InAs on GaAs

H. Munekata, Armin Segmüller, and L. L. Chang

Appl. Phys. Lett. 51, 587 (1987); http://dx.doi.org/10.1063/1.98356 (3 pages) | Cited 8 times

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Lattice relaxation in InAs epitaxial films, grown by molecular beam epitaxy on GaAs, has been studied by grazing‐incidence x‐ray diffraction, supplemented by in situ reflection electron diffraction. Inhomogeneous lattice distortion has been found in that the films consist of weakly and strongly strained regions, and the latter disappear with increasing film thickness. The (100) orientation is favored over the (110) in the formation of the strongly strained domains because of the relatively low elastic energies.
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68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Optical time‐of‐flight measurement of carrier diffusion and trapping in an InGaAs/InP heterostructure

D. J. Westland, D. Mihailovic, J. F. Ryan, and M. D. Scott

Appl. Phys. Lett. 51, 590 (1987); http://dx.doi.org/10.1063/1.98357 (3 pages) | Cited 36 times

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We have measured the diffusion and trapping of photoexcited hot carriers in an InGaAs/InP heterostructure using an optical time‐of‐fight technique with picosecond time resolution. The ambipolar diffusivity is found to decrease by an order of magnitude between 4 K and room temperature, and the efficiency of trapping of carriers into the well increases rapidly in the same temperature range. A mean trapping time of 4 ps is measured for a 50 Å well.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.55.Cr III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Dimer arsenic source using a high efficiency catalytic cracking oven for molecular beam epitaxy

J. C. Garcia, A. Barski, J. P. Contour, and J. Massies

Appl. Phys. Lett. 51, 593 (1987); http://dx.doi.org/10.1063/1.98987 (3 pages) | Cited 6 times

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The cracking efficiency of a catalytic double‐oven arsenic dimer source has been studied by modulated beam mass spectrometry and the catalytic activity of several materials investigated through the cracking of the tetramer molecules produced from crystalline arsenic with a pyrolytic boron nitride (pBN) oven. The catalytic activity decreases as follows: Pt, Pt‐Rh>Re>Ta>Mo, W‐Re>graphite>pBN. Platinum and its alloys with rhodium react with arsenic above 500 °C giving definite compounds and therefore cannot be used as a catalyst. A 95% conversion efficiency is obtained with rhenium around 700 °C, a temperature which is more than 300 °C lower than the temperature required with graphite for an equivalent efficiency. Such a decrease of the operating temperature of the cracker cell is of great practical interest because of the reduction of the arsenic flux contamination by outgassing impurities.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Hydrogen passivation of C acceptors in high‐purity GaAs

N. Pan, S. S. Bose, M. H. Kim, G. E. Stillman, F. Chambers, G. Devane, C. R. Ito, and M. Feng

Appl. Phys. Lett. 51, 596 (1987); http://dx.doi.org/10.1063/1.98358 (3 pages) | Cited 49 times

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The effects of hydrogenation in high‐purity p‐type GaAs grown by molecular beam epitaxy and metalorganic chemical vapor deposition have been investigated by low‐temperature photoluminescence and Hall‐effect measurements. Before hydrogenation, photoluminescence measurements showed the dominant acceptor in the original samples was C, while after hydrogenation, the concentration of electrically active C acceptors was significantly reduced and the samples were highly resistive. These electrical and spectroscopic results show that C acceptors in GaAs can be passivated by hydrogenation.
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81.65.-b Surface treatments
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
78.55.Cr III-V semiconductors

Photoluminescence microscopy of epitaxial GaAs on Si

P. L. Gourley, M. Longerbone, S. L. Zhang, and H. Morkoç

Appl. Phys. Lett. 51, 599 (1987); http://dx.doi.org/10.1063/1.98359 (3 pages) | Cited 6 times

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We report microscopic photoluminescence images and corresponding spectra of epitaxial GaAs on Si substrates, prepared by molecular beam epitaxy. High magnification (3000×) images directly reveal dislocations present in the epilayer. Several substrate orientations are investigated including nominal (001) tilted 4° toward 〈110〉. The GaAs samples include structures grown with and without superlattice buffer layers. Some samples were annealed at several temperatures from 650 to 850 °C. The dislocation density versus depth is studied by varying the optical probe wavelength and by studying samples that had been beveled and etched. In addition, the images and spectra are studied over a wide temperature range.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.55.Cr III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Reduction of interfacial tunnel defects in silicon due to chemical vapor deposition of tungsten

J. M. De Blasi, M. Delfino, D. K. Sadana, K. N. Ritz, and M. H. Norcott

Appl. Phys. Lett. 51, 602 (1987); http://dx.doi.org/10.1063/1.98360 (3 pages)

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A method is reported for reducing tunnel formation in p+‐n Si, and a correlation is shown between tunnel defects and junction leakage. 11B+‐implanted Si annealed for 30 min at 900 °C in N2 and subsequently deposited with W forms a high density of filamentary tunnel defects extending on the order of 0.1 μm from the W/Si interface. Reverse‐bias leakage of 0.33‐μm‐deep junctions is −90 nA/cm2 at −5 V and the forward‐bias ideality is 1.24 over eight decades of current. By contrast, for 11B+‐implanted Si oxidized for 7 min in steam, tunnels if present are less than 0.01 μm in length. The reverse‐bias leakage is −0.3 nA/cm2 at −5 V and the forward‐bias ideality is 1.00. The 2×1019 cm−3 interfacial carrier concentration is the same for both deposits.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
85.30.De Semiconductor-device characterization, design, and modeling
68.35.Dv Composition, segregation; defects and impurities

Experimental determination of hot‐carrier scattering processes in AlxGa1−xAs

F. W. Wise, I. A. Walmsley, and C. L. Tang

Appl. Phys. Lett. 51, 605 (1987); http://dx.doi.org/10.1063/1.98361 (3 pages) | Cited 30 times

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The initial relaxation of hot electrons in Al0.35Ga0.65As has been measured using optical transmission‐correlation spectroscopy. In order to determine the contributions of distinct scattering processes, the kinetic energy of the photoexcited carriers was varied by temperature tuning the band gap of the material. We obtain the rates of intervalley scattering, carrier‐carrier scattering, and polar phonon emission from the measured decays. When scattering to the satellite (L and X) valleys is energetically possible, this process dominates the relaxation.
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72.20.Dp General theory, scattering mechanisms
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.47.-p Spectroscopy of solid state dynamics

Stable photoinduced paramagnetic defects in hydrogenated amorphous silicon nitride

David T. Krick, P. M. Lenahan, and J. Kanicki

Appl. Phys. Lett. 51, 608 (1987); http://dx.doi.org/10.1063/1.98362 (3 pages) | Cited 31 times

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Room‐temperature stable paramagnetic defects have been induced in hydrogenated amorphous silicon nitride films by exposure to sub‐band‐gap ultraviolet light. These defects are almost certainly trivalent silicon centers which can be completely annealed at temperatures higher than 250 °C. These defects seem similar in chemical origin to light‐induced centers in hydrogenated amorphous silicon and defects in irradiated metal‐oxide‐semiconductor field‐effect transistors.
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61.72.Bb Theories and models of crystal defects
76.30.-v Electron paramagnetic resonance and relaxation
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices

Solid phase epitaxial regrowth of boron‐doped polycrystalline silicon deposited by low‐pressure chemical vapor deposition

M. Y. Ghannam and R. W. Dutton

Appl. Phys. Lett. 51, 611 (1987); http://dx.doi.org/10.1063/1.98363 (3 pages) | Cited 8 times

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Solid phase epitaxial regrowth of polycrystalline silicon deposited on ‘‘oxide‐free’’ (100) oriented single‐crystal substrates and implanted with boron is investigated by means of secondary ion mass spectrometry, Rutherford backscattering channeling, and transmission electron microscopy. The effects of annealing ambients and heavy doping on the regrowth rate are also studied.
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81.15.Np Solid phase epitaxy; growth from solid phases
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Annealing treatment effects on structure and superconductivity in Y1Ba2Cu3O9−x

R. Beyers, G. Lim, E. M. Engler, V. Y. Lee, M. L. Ramirez, R. J. Savoy, R. D. Jacowitz, T. M. Shaw, S. La Placa, R. Boehme, C. C. Tsuei, Sung I. Park, M. W. Shafer, and W. J. Gallagher

Appl. Phys. Lett. 51, 614 (1987); http://dx.doi.org/10.1063/1.98364 (3 pages) | Cited 51 times

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We report the effects of heat treatment and ambient on the structure and superconducting properties of Y1Ba2Cu3O9−x. The structure undergoes an orthorhombic‐to‐tetragonal transition on heating at about 700 °C, caused by oxygen loss and disordering of oxygen vacancies on the copper plane between the barium layers. Heat treatments that promote maximum ordering of the oxygen vacancies result in superior superconducting properties.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
74.70.-b Superconducting materials other than cuprates
61.72.jd Vacancies
61.72.jj Interstitials
61.50.Ks Crystallographic aspects of phase transformations; pressure effects

Operation of a Y‐Ba‐Cu‐O rf SQUID at 81 K

J. E. Zimmerman, J. A. Beall, M. W. Cromar, and R. H. Ono

Appl. Phys. Lett. 51, 617 (1987); http://dx.doi.org/10.1063/1.98365 (2 pages) | Cited 38 times

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An rf superconducting quantum interference device (SQUID) has been made from bulk Y‐Ba‐Cu‐O. The device displays quantum interference effects and operates with useful signal levels up to 81 K. The SQUID is formed from a ring of Y‐Ba‐Cu‐O which is broken in the cryogenic environment and then recontacted. Estimates of the SQUID noise performance are given.
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85.25.-j Superconducting devices

Preparation of Y‐Ba‐Cu oxide superconductor thin films using pulsed laser evaporation from high Tc bulk material

D. Dijkkamp, T. Venkatesan, X. D. Wu, S. A. Shaheen, N. Jisrawi, Y. H. Min‐Lee, W. L. McLean, and M. Croft

Appl. Phys. Lett. 51, 619 (1987); http://dx.doi.org/10.1063/1.98366 (3 pages) | Cited 471 times

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We report the first successful preparation of thin films of Y‐Ba‐Cu‐O superconductors using pulsed excimer laser evaporation of a single bulk material target in vacuum. Rutherford backscattering spectrometry showed the composition of these films to be close to that of the bulk material. Growth rates were typically 0.1 nm per laser shot. After an annealing treatment in oxygen the films exhibited superconductivity with an onset at 95 K and zero resistance at 85 and 75 K on SrTiO3 and Al2O3 substrates, respectively. This new deposition method is relatively simple, very versatile, and does not require the use of ultrahigh vacuum techniques.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
79.20.Ds Laser-beam impact phenomena
74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates

Plasma oxidation of the high Tc superconducting perovskites

B. G. Bagley, L. H. Greene, J.‐M. Tarascon, and G. W. Hull

Appl. Phys. Lett. 51, 622 (1987); http://dx.doi.org/10.1063/1.98367 (3 pages) | Cited 43 times

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A near room‐temperature plasma oxidation process is shown to restore superconductivity and metalliclike behavior in oxygen deficient La2−x Srx CuO4−y and YBa2Cu3O7−x compounds. In the YBa2Cu3O7−x compound the conversion from an oxygen deficient n‐type tetragonal to the p‐type orthorhombic phase with a concomitant factor of 5×105 increase in room‐temperature conductivity is also accomplished. This process is of technological importance because oxygen can be restored in these materials at temperatures compatible with device processing. Of scientific interest, the process allows us to carefully control the oxidation state and thereby systematically study the 90 and 55 K superconducting transitions in YBa2Cu3O7−x.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.70.-b Superconducting materials other than cuprates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
81.40.Rs Electrical and magnetic properties related to treatment conditions

Effect of crystal structure on superconductivity of Y‐Ba‐Cu‐O system compounds

Xiaoping Jiang, Huafeng Yu, Ze Zhang, Naiping Zhu, Hongbo Qi, Guoyue Shu, Yunchuan Tian, Dexing Pang, Xiaobiao Zeng, and Zhongjin Yang

Appl. Phys. Lett. 51, 625 (1987); http://dx.doi.org/10.1063/1.98368 (3 pages) | Cited 7 times

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This letter reports the effect of distortion of crystal structure on the superconductivity of Y‐Ba‐Cu‐O compounds. The result shows that the cooling rate is responsible for the superconductivity in the range of LN2 temperature with the same composition and heat treatment temperature. The changes of intensity of three dominant x‐ray diffraction peaks caused by structural distortion in the perovskite orthorhombic phase may become an important criterion of superconductivity.
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74.10.+v Occurrence, potential candidates
74.70.-b Superconducting materials other than cuprates
61.66.Fn Inorganic compounds
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