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7 Mar 1988

Volume 52, Issue 10, pp. 767-852

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Cross coupled cavity semiconductor laser

J. Salzman, J. S. Osinski, R. Bhat, K. Cummings, and L. Harriott

Appl. Phys. Lett. 52, 767 (1988); http://dx.doi.org/10.1063/1.99333 (3 pages) | Cited 1 time

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A novel monolithic coupling scheme in which three or four active waveguides interact interferometrically to form a multicavity semiconductor laser is demonstrated. The coupling between perpendicular waveguides is obtained by an integrated beamsplitter. Frequency selection, tunability, and single mode operation are demonstrated.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Parasitic‐free measurement of the fundamental frequency response of a semiconductor laser by active‐layer photomixing

Michael A. Newkirk and Kerry J. Vahala

Appl. Phys. Lett. 52, 770 (1988); http://dx.doi.org/10.1063/1.99278 (3 pages) | Cited 16 times

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We report the measurement of the fundamental (intrinsic) frequency response of a GaAs semiconductor laser to 12 GHz by directly photomixing two optical sources in the active region of the laser. This novel technique reveals the underlying fundamental frequency response of the device as parasitic effects are avoided. Well beyond the relaxation resonance, the theoretically predicted 40 dB/dec signal rolloff is observed. Other features of the measured response function are also observed to be the theoretical ideal.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes

Picosecond gain dynamics in KrF amplifiers

A. J. Taylor, R. B. Gibson, and J. P. Roberts

Appl. Phys. Lett. 52, 773 (1988); http://dx.doi.org/10.1063/1.99279 (3 pages) | Cited 17 times

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The steady‐state and dynamic gain characteristics in a KrF amplifier are studied with the use of 1 ps pulses. A saturation energy density in the range 1.8–2.0±0.2 mJ/cm2 is measured. The recovery of the small‐signal gain coefficient exhibits two recovery processes with time constants of 67±10 ps and 2.0±0.2 ns.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Optical waveguide lens measurement using an image processing system

A. Miki, Y. Okamura, and S. Yamamoto

Appl. Phys. Lett. 52, 776 (1988); http://dx.doi.org/10.1063/1.99280 (2 pages) | Cited 1 time

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An image processing system was used to evaluate optical waveguide lens performance. The focal length, the focal spot size, and the efficiency of geodesic lenses formed on ion‐exchanged waveguides were measured nondestructively, and beams propagating along the curved guiding surface of the waveguide lens were observed.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
42.79.Bh Lenses, prisms and mirrors

Monitoring humidity by polyimide lightguides

R. Reuter and H. Franke

Appl. Phys. Lett. 52, 778 (1988); http://dx.doi.org/10.1063/1.99281 (2 pages) | Cited 8 times

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Planar waveguides of the commercially available polyimide ‘‘PI 2566’’ and polyamide‐imide ‘‘AI lite’’ are spin coated on glass substrates. TE and TM polarized modes are launched simultaneously into the phase‐matched planar lightguide. This polymer guide is sensitive to changes in its birefringence. Polyimide films in the ‘‘as‐dried’’ and fast cured state turn out to be very sensitive to moisture. Changes in the vicinity of the waveguide can be monitored instantly.
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78.20.Fm Birefringence
42.79.Gn Optical waveguides and couplers
81.40.Tv Optical and dielectric properties related to treatment conditions

Importance of interface hydraulic condition on the generation of second bulk compressional wave in porous media

Patrick N. J. Rasolofosaon

Appl. Phys. Lett. 52, 780 (1988); http://dx.doi.org/10.1063/1.99282 (3 pages) | Cited 24 times

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The fundamental prediction of Biot’s thoery [J. Acoust. Soc. Am. 28, 168 (1956)] for propagation of acoustic waves in saturated porous media is the existence of a second compressional wave (SCW). This wave has been observed experimentally by Plona [Appl. Phys. Lett. 36, 259 (1980)]. In this work, we modify Plona’s experiments on saturated porous plates by sealing off interface permeability using a thin coat of paint on both sides of the plates. Our work focuses on the influence of this coating on the observed acoustic waves. No SCW generation is observed on coated plates which was predicted by Geertsma and Smit [Geophysics 41, 169 (1961)] using Biot’s theory. Furthermore, due to total energy conservation, the generation of the SCW substantially modifies the energy of the other ordinary waves. A comparison between experimental and synthetic signals using Biot’s theory shows good agreement. These results show the importance of free fluid transfer at the interface between the porous medium and the fluid for the generation of the SCW.
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68.43.-h Chemisorption/physisorption: adsorbates on surfaces
62.30.+d Mechanical and elastic waves; vibrations
68.43.Pq Adsorbate vibrations
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants

Time‐resolved plasma parameter measurements in a low‐frequency rf glow discharge

Colin A. Anderson, William G. Graham, and Michael B. Hopkins

Appl. Phys. Lett. 52, 783 (1988); http://dx.doi.org/10.1063/1.99283 (3 pages) | Cited 16 times

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A new approach to the use of Langmuir probes in a rf driven plasma is presented. The periodic nature of the rf is utilized to overcome the distortion of the probe characteristics caused by averaging over many rf cycles. Time‐resolved measurements of the electron density, electron temperature, plasma potential, and floating potential in the negative portion of the rf cycle are obtained. The technique is used to characterize a low‐pressure 100‐kHz capacitively coupled rf argon discharge. The measured electron temperature is found to be approximately 0.5 eV.
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52.70.Ds Electric and magnetic measurements
52.80.Hc Glow; corona

Energy transport in aluminum targets irradiated by a 263‐nm laser

A. Yamauchi, K. A. Tanaka, R. Kodama, M. Kado, T. Yamanaka, T. Mochizuki, S. Nakai, and C. Yamanaka

Appl. Phys. Lett. 52, 786 (1988); http://dx.doi.org/10.1063/1.99284 (3 pages) | Cited 3 times

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Emission from the rear side of 263‐nm laser irradiated thin foil targets shows the temporal profile of rear surface heating by several processes with different energy transport mechanisms. Formation and decay of shock waves are observed by varying target thickness. Propagation of a thermal conduction wave is clearly separated from the shock propagation.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Low‐temperature oxidation of implanted TiSi2 films

O. W. Holland

Appl. Phys. Lett. 52, 789 (1988); http://dx.doi.org/10.1063/1.99285 (3 pages)

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The effect of implantation on the low‐temperature oxidation behavior of TiSi2 films is investigated. Critical fluences of implanted impurities, such as As and Ga, are shown to alter the dominant oxidation mechanism in the films and greatly enhance oxidation. Different techniques, such as inert‐ and self‐ion implantation, and implantation at elevated temperatures, were done so that ion‐induced damage and chemical effects could be separately studied. These results, along with the dose dependency of the film’s behavior, will be presented. A model is proposed which accounts for these observations.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.05.Bx Metals, semimetals, and alloys
68.60.Dv Thermal stability; thermal effects

Band structure of metallic pyrochlore ruthenates Bi2Ru2O7 and Pb2Ru2O6.5

William Y. Hsu, Robert V. Kasowski, Thomas Miller, and Tai‐Chang Chiang

Appl. Phys. Lett. 52, 792 (1988); http://dx.doi.org/10.1063/1.99286 (3 pages) | Cited 29 times

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The band structure of Bi2Ru2O7 and Pb2Ru2O6.5 has been computed self‐consistently from first principles for the first time by the pseudofunction method. We discover that the 6s bands of Bi and Pb are very deep and unlikely to contribute to the metallic behavior as previously believed. The unoccupied 6p bands, however, are only several eV above the Fermi energy and are mixed with the Ru 4d band at the Fermi surface via the framework O atoms, leading to band conduction and delocalized magnetic moments. The predicted location of the 6s bands and the location and width of the O 2p band are confirmed by synchrotron radiation and ultraviolet electron spectroscopy of single crystals.
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71.20.-b Electron density of states and band structure of crystalline solids
79.60.Jv Interfaces; heterostructures; nanostructures

Reaction kinetics of nickel/silicon multilayer films

L. A. Clevenger, C. V. Thompson, R. C. Cammarata, and K. N. Tu

Appl. Phys. Lett. 52, 795 (1988); http://dx.doi.org/10.1063/1.99644 (3 pages) | Cited 68 times

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We report on the use of differential scanning calorimetry to study the temperatures and kinetics of nickel silicide formation from nickel/amorphous silicon multilayer films. When the layer thickness ratio of a multilayer film is 1:1, Ni2 Si is the only phase to form. The activation energy for this reaction is 1.5 eV and the interdiffusivity pre‐exponential is found to be 6 cm−2s−1. These values are in excellent agreement with values obtained using different techniques. The temperature at which Ni2 Si formation is observed a function of layer thickness, with the thinner layers reacting at lower temperatures. This layer thickness dependence can be explained by the lower reaction times for thinner layers. Upon mechanical impact, films composed of very thin layers (<125 Å) reacted explosively at room temperature to form Ni2 Si. Explosive silicidation is presumed to occur when the rate of heat generation at the many reacting interfaces exceeds the rate of heat dissipation.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Fx Diffusion; interface formation

Influence of coupling of wells on spontaneous emission line shape in GaAs/GaAlAs multiple quantum wells

M. Krahl, J. Christen, D. Bimberg, G. Weimann, and W. Schlapp

Appl. Phys. Lett. 52, 798 (1988); http://dx.doi.org/10.1063/1.99287 (3 pages) | Cited 9 times

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The results of a comparative study of the low‐temperature luminescence line shape of molecular beam epitaxially grown GaAs/GaAlAs coupled and uncoupled quantum wells (QW’s) are presented. A pronounced spectral narrowing of the emission line with increasing coupling of QW’s is found. A detailed model for spontaneous emission line shapes for real superlattices is established: The superlattice density of states is calculated in the framework of envelope function approximation. Interface roughness yields Gaussian distribution of layer thicknesses resulting in a broadened density of states. The variance of this distribution function is a measure of interface quality. The reduction of the variance with increased coupling is explained by an enhanced excitonic averaging mechanism in superlattices.
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78.45.+h Stimulated emission
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.35.-y Excitons and related phenomena

Extremely high negative photoconductivity in p‐modulation‐doped GaAs quantum wells

R. A. Höpfel

Appl. Phys. Lett. 52, 801 (1988); http://dx.doi.org/10.1063/1.99288 (3 pages) | Cited 11 times

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In p‐modulation‐doped quantum wells of GaAs/AlGaAs extremely high negative photoconductivity is observed at low temperatures. The in‐plane sheet resistance can be increased by a factor of more than 60 with illumination of less than 1 W/cm2. Spectral analysis shows that the effect is mainly due to hole trapping in the potential minima of AlGaAs and subsequent recombination of minority electrons.
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73.50.Pz Photoconduction and photovoltaic effects
73.61.Ey III-V semiconductors
73.25.+i Surface conductivity and carrier phenomena
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Room‐temperature codeposition growth technique for pinhole reduction in epitaxial CoSi2 on Si (111)

T. L. Lin, R. W. Fathauer, P. J. Grunthaner, and C. d’Anterroches

Appl. Phys. Lett. 52, 804 (1988); http://dx.doi.org/10.1063/1.99289 (3 pages) | Cited 29 times

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A solid phase epitaxy technique has been developed for the growth of CoSi2 films on Si (111) with no observable pinholes (103 cm−2 detection limit). The technique utilizes room‐temperature codeposition of Co and Si in stoichiometric ratio, followed by the deposition of an amorphous Si capping layer and subsequent in situ annealing at 550–600 °C. CoSi2 films grown without the Si cap are found to have pinhole densities of 107–108 cm−2 when annealed at similar temperatures. A CF4 plasma etching technique was used to increase the visibility of the pinholes in the silicide layer. This plasma technique extends the pinhole detection resolution to 103 cm−2 and is independent of the pinhole size.
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81.15.Np Solid phase epitaxy; growth from solid phases
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Reduced photoinduced degradation in chemical vapor deposited hydrogenated amorphous silicon films

T. L. Chu, Shirley S. Chu, E. G. Bylander, and S. T. Ang

Appl. Phys. Lett. 52, 807 (1988); http://dx.doi.org/10.1063/1.99290 (3 pages) | Cited 3 times

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Hydrogenated amorphous silicon (a‐Si:H) films prepared by the thermal decomposition of disilane in a He atmosphere [chemical vapor deposition (CVD)] contain 3–4% hydrogen, considerably less than the hydrogen content in a‐Si:H films prepared by glow discharge (GD). The CVD a‐Si:H films have been irradiated for up to 175 h at 500 and 600 mW/cm2 using a quartz‐halogen lamp. The defect density in CVD a‐Si:H films is estimated to approach saturation at mid 1016 cm−3 from an initial defect density of less than 6×1015 cm−3, whereas the typical defect density at saturation is greater than 1018 cm−3 for GD a‐Si:H films. The significantly reduced Staebler–Wronski effect in CVD a‐Si:H films is attributed to the lower concentration of clustered hydrogen atoms or silicon–hydrogen bonds.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.50.Pz Photoconduction and photovoltaic effects
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Silicon dioxide deposition at 100 °C using vacuum ultraviolet light

Jeffrey Marks and Ruby E. Robertson

Appl. Phys. Lett. 52, 810 (1988); http://dx.doi.org/10.1063/1.99291 (3 pages) | Cited 18 times

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A new photochemical reaction for low‐temperature deposition of silicon dioxide has been developed. In this process silane is reacted with nitrogen dioxide in the presence of vacuum ultraviolet radiation. The electrical and mechanical properties of films grown at 100 °C are reported. Capacitance voltage measurements on metal‐oxide‐semiconductor structures on silicon indicate an interface state density <5×1011/cm2. Several possible reaction mechanisms are discussed, and evidence is presented indicating surface photochemistry may be important.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Ng Insulators
68.60.Bs Mechanical and acoustical properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Point defect/dopant diffusion considerations following preamorphization of silicon via Si+ and Ge+ implantation

A. C. Ajmera, G. A. Rozgonyi, and R. B. Fair

Appl. Phys. Lett. 52, 813 (1988); http://dx.doi.org/10.1063/1.99292 (3 pages) | Cited 27 times

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A comparison has been made between two shallow preamorphization techniques using Si+ and Ge+ implantation, followed by B+ implantation and rapid thermal annealing (RTA). The subsequent impact on boron diffusion profiles and extended defects have been examined experimentally with secondary ion mass spectroscopy and cross‐section transmission electron microscopy, and theoretically with the predict computer program, in an attempt to generalize the observations. Enhanced or retarded B diffusion during RTA has been correlated with the relative depths of the original amorphous/crystalline interface and the as‐implanted B profiles, with ion type used for preamorphization, and with the initial type and relative location of the radiation‐induced point defects. In general, Si+ self‐implant samples showed less B profile broadening than Ge+ implant samples following RTA at 1050 °C for 10 s. The conditions necessary for complete annihilation of end‐of‐range interstitial loops for Si+ self‐amorphization are specified.
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61.72.uf Ge and Si
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities
61.72.Bb Theories and models of crystal defects

Growth of high quality indium phosphide from metalorganic sources by molecular beam epitaxy

D. A. Andrews, S. T. Davey, C. G. Tuppen, B. Wakefield, and G. J. Davies

Appl. Phys. Lett. 52, 816 (1988); http://dx.doi.org/10.1063/1.99293 (3 pages) | Cited 10 times

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We report the growth of nominally undoped InP by molecular beam epitaxy (MBE) from metallic indium, trimethylindium, or triethylindium and phosphine. We find significantly reduced acceptor incorporation when metalorganic sources are used, with exciton‐dominated photoluminescence at 4.2 K and electron mobilities up to 47 500 cm2 V−1 s−1 at 77 K. The 4.2 K photoluminescence indicates that the residual shallow acceptors are either Ca, Mg, or Be. The carbon incorporation appears to be minimal. Interestingly, there is also little difference in electrical and optical properties of InP grown by metalorganic molecular beam epitaxy (MOMBE) using trimethyl or triethylindium, in marked contrast to the situation for GaAs MOMBE growth using trimethyl or triethylgallium.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.20.Hb Impurity and defect levels; energy states of adsorbed species

High quality silicon‐on‐insulator structure formed by oxygen implantation and lamp annealing

D. P. Vu, M. Haond, C. d’Anterroches, J. C. Oberlin, A. Golanski, J. J. Grob, and S. Maillet

Appl. Phys. Lett. 52, 819 (1988); http://dx.doi.org/10.1063/1.99294 (3 pages) | Cited 6 times

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A silicon‐on‐insulator (SOI) structure was formed by implanting 150 keV O+ ions into a single‐crystal n‐type Si. The substrate temperature during implantation was maintained at 600 °C. Implanted samples were subsequently annealed in the ambient air at 1350 °C for 70 min using a halogen lamp oven and analyzed using the Rutherford backscattering/channeling technique, cross‐sectional electron microscopy, and high‐resolution electron microscopy. It is shown that the resulting dislocation density within the top Si layer (105–106/cm2) is two to three orders of magnitude lower than the dislocation density previously reported for the SOI structures implanted under similar conditions and subsequently annealed in an inert gas ambient or under vacuum.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.65.-b Surface treatments
68.35.Dv Composition, segregation; defects and impurities

GaAs‐Si heterojunction bipolar transistor

J. Chen, T. Won, M. S. Ünlü, H. Morkoç, and D. Verret

Appl. Phys. Lett. 52, 822 (1988); http://dx.doi.org/10.1063/1.99295 (3 pages) | Cited 1 time

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A GaAs/Si heterojunction bipolar transistor (HBT) structure is proposed having application for high‐frequency operation. The structure combines the high‐frequency capability of the GaAs/AlGaAs system with the advanced processing technology of Si. The proposed device consists of an n‐AlGaAs/p‐GaAs emitter and base layers on an n‐Si collector with improved junction characteristics at the GaAs/Si heterointerface afforded by thermal annealing. This novel device structure combines the advantages associated with a wide band‐gap AlGaAs emitter, the high electron mobility of GaAs, and the substantial reduction in device parasitics accorded the self‐aligned structure. Additionally, the proposed device offers the possibility of planar GaAs processing. With the use of a compact transistor model, calculations of the high‐speed capability of this transistor are presented. For an emitter‐base junction area of 1 μm×5 μm, optimized fmax=108 GHz and fmax=ft=89 GHz were computed for the GaAs/Si HBT, compared to 76 and 62 GHz, respectively, for equivalent GaAs/AlGaAs HBT’s.
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85.30.Pq Bipolar transistors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Buried heterostructure AlxGa1−xAs‐GaAs quantum well lasers by Ge diffusion from the vapor

D. G. Deppe, W. E. Plano, J. M. Dallesasse, D. C. Hall, L. J. Guido, and N. Holonyak

Appl. Phys. Lett. 52, 825 (1988); http://dx.doi.org/10.1063/1.99296 (3 pages) | Cited 8 times

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Data are presented on a method to diffuse Ge into quantum well AlxGa1−xAs‐GaAs crystals from a vapor source, thus effecting impurity‐induced layer disordering, and shift from lower to higher gap. The Ge diffusion is characterized on undoped GaAs by using secondary ion mass spectroscopy and capacitance‐voltage electrochemical profiling. The layer disordering with Ge is used to fabricate 5‐μm‐wide buried heterostructure quantum well lasers (250 μm long) with continuous wave thresholds as low as 7 mA and output powers of greater than 90 mW (both facets).
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68.35.Fx Diffusion; interface formation
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
66.30.J- Diffusion of impurities

‘‘Coreless defects’’ and the continuity of epitaxial NiSi2/Si(100) thin films

J. L. Batstone, J. M. Gibson, R. T. Tung, and A. F. J. Levi

Appl. Phys. Lett. 52, 828 (1988); http://dx.doi.org/10.1063/1.99297 (3 pages) | Cited 20 times

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Epitaxial thin films of NiSi2 on Si(100) have been grown by room‐temperature deposition of Ni followed by a high‐temperature reaction. Initial stages of epitaxy revealed by transmission electron microscopy show nucleation of crystallographically equivalent islands related by a translation vector a/4〈111〉 via the underlying silicon substrate. Coalescence of islands thus requires the generation of a/4〈111〉 dislocations, which is energetically unfavorable. We find that very thin films (∼60 Å) do not coalesce, but choose to remain as islands leaving trenches of exposed substrate 15±1.5 Å in width between them. We propose that the trench left between islands can be described as a coreless defect in the silicide.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Np Solid phase epitaxy; growth from solid phases
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)

Extended infrared response of InAsSb strained‐layer superlattices

S. R. Kurtz, G. C. Osbourn, R. M. Biefeld, L. R. Dawson, and H. J. Stein

Appl. Phys. Lett. 52, 831 (1988); http://dx.doi.org/10.1063/1.99298 (3 pages) | Cited 30 times

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Strained‐layer superlattices of InAsSb were grown with low densities of dislocations and microcracks for optical characterization to determine the suitability of these structures for infrared photodetectors. Infrared transmission measurements revealed absorption throughout the 8–12 μm region and extended to longer wavelengths than predicted from consideration of the tensile strain‐induced band‐gap shift in a type‐I superlattice. We conclude that a type‐II superlattice occurs in the InAsSb system for alloy compositions >60% Sb.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
85.60.Gz Photodetectors (including infrared and CCD detectors)
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors

Fabrication of free‐standing single‐crystal silicon wires

A. Potts, D. G. Hasko, J. R. A. Cleaver, and H. Ahmed

Appl. Phys. Lett. 52, 834 (1988); http://dx.doi.org/10.1063/1.99299 (2 pages) | Cited 2 times

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A fabrication process for free‐standing single‐crystal silicon wires of submicrometer cross‐sectional dimensions and lengths in excess of 40 μm is reported. The starting material is silicon‐on‐insulator that has been recrystallized using a dual electron beam recrystallizing system. The wires are then fabrictaed in the recrystallized layer by a combination of electron beam lithography and plasma etching. Electrical measurements have been performed and the fabrication limits of the process are discussed.
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85.40.Ls Metallization, contacts, interconnects; device isolation
84.32.Hh Inductors and coils; wiring
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.65.-b Surface treatments

Chemically etched micromirrors in silicon

D. L. Kendall, G. R. de Guel, S. Guel‐Sandoval, E. J. Garcia, and T. A. Allen

Appl. Phys. Lett. 52, 836 (1988); http://dx.doi.org/10.1063/1.99300 (2 pages) | Cited 1 time

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Purposely introduced pinholes can be processed so as to produce nearly spherical or paraboloidal depressions in (100) silicon by a two‐step chemical etching procedure in KOH:water solutions. Regular arrays of f/1–f/10 specularly reflecting micromirrors can be fabricated.
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81.65.-b Surface treatments
68.35.B- Structure of clean surfaces (and surface reconstruction)
42.86.+b Optical workshop techniques
85.60.Jb Light-emitting devices
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