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7 Mar 1988

Volume 52, Issue 10, pp. 767-852

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Effect of fluoride doping on the transition temperature of YBa2Cu3O6.5+δ

Narottam P. Bansal, Ann L. Sandkuhl, and D. E. Farrell

Appl. Phys. Lett. 52, 838 (1988); http://dx.doi.org/10.1063/1.99301 (3 pages) | Cited 18 times

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The effect of fluoride doping on the superconducting transition temperature, Tc, of YBa2Cu3O6.5+δ has been investigated. Samples of nominal composition YBa2Cu3FxO6.5+δ−0.5x were synthesized where x was varied by two orders of magnitude from 0.0165 to 1.65. Tc systematically increased with x, reached a maximum of 93.4 K (midpoint) for x=0.066 and then dropped for higher concentrations. The sharpest transition, ΔTc(10–90%)=0.7±0.1 K, coincided with a maximum in Tc. From powder x‐ray diffraction measurements, samples with x≤0.066 were found to be single phase perovskite whereas those with x≥0.165 also contained BaF2, CuO, and an unknown phase. Although we find no evidence for the very high Tc’s reported by S. R. Ovshinsky, R. T. Young, D. D. Allred, G. DeMaggio, and G. A. Van der Leeden [Phys. Rev. Lett. 58, 2579 (1987)], our results do indicate that the effect of fluorine is qualitatively different from that produced by other dopants.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.70.-b Superconducting materials other than cuprates
61.72.up Other materials

Microstructures of YBa2Cu3O7−x superconducting thin films grown on a SrTiO3(100) substrate

C. H. Chen, J. Kwo, and M. Hong

Appl. Phys. Lett. 52, 841 (1988); http://dx.doi.org/10.1063/1.99302 (3 pages) | Cited 32 times

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We report microstructures of superconducting YBa2Cu3O7−x thin films epitaxially grown on a SrTiO3(100) substrate. Transmission electron microscopy studies reveal epitaxial, highly ordered grains ∼5000 Å in size for both types of films with either the a or c axis perpendicular to the film. Defects due to out‐of‐phase boundaries are observed in the former case. The high density of twin boundaries found in the latter case seems to correlate with the higher Jc observed in thin‐film samples.
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68.55.-a Thin film structure and morphology
74.70.-b Superconducting materials other than cuprates
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
74.78.-w Superconducting films and low-dimensional structures

Preparation of thin‐film YBaCuO quantum interference devices with a lift‐off technique

B. Häuser, M. Diegel, and H. Rogalla

Appl. Phys. Lett. 52, 844 (1988); http://dx.doi.org/10.1063/1.99303 (3 pages) | Cited 23 times

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Highly textured and polycrystalline YBaCuO thin films were sputtered on cold MgO single‐crystal substrates. After annealing in oxygen for 1 h at 920 °C, the films show critical temperatures Tc,end up to 74.5 K. Superconducting quantum interference devices (dc SQUID’s) structured in ≊1‐μm‐thick polycrystalline films with a lift‐off technique exhibit a critical current of 2 mA at 5.5 K and 35 μA at 72 K. Voltage modulation can be observed at temperatures up to 63 K.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures
81.15.Cd Deposition by sputtering

Investigation of the opacity of hot, dense aluminum in the region of its K edge

S. J. Davidson, J. M. Foster, C. C. Smith, K. A. Warburton, and S. J. Rose

Appl. Phys. Lett. 52, 847 (1988); http://dx.doi.org/10.1063/1.99304 (3 pages) | Cited 94 times

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We report the application of a technique for performing opacity measurements on hot, dense plasmas. Plasmas were generated by using the x rays emitted from a laser‐produced gold plasma to heat an aluminum sample. Observations were made using the technique of point projection spectroscopy. The distribution of ion stages observed is compared with predictions based on Saha distributions, at densities and temperatures deduced from hydrodynamic simulations.
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52.70.La X-ray and γ-ray measurements
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
FREE

Comment on ‘‘Femtosecond dynamics of highly excited carriers in AlxGa1−xAs’’ [Appl. Phys. Lett. 51, 161 (1987)]

C. L. Tang, I. A. Walmsley, and F. W. Wise

Appl. Phys. Lett. 52, 850 (1988); http://dx.doi.org/10.1063/1.99637 (2 pages) | Cited 5 times

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Abstract Unavailable
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
FREE

Erratum: Relaxation of strained‐layer semiconductor structures via plastic flow [Appl. Phys. Lett. 51, 1325 (1987)]

Brian W. Dodson and Jeffrey. Y. Tsao

Appl. Phys. Lett. 52, 852 (1988); http://dx.doi.org/10.1063/1.99658 (1 page) | Cited 54 times

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Abstract Unavailable
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Dv Composition, segregation; defects and impurities
62.20.Hg Creep
68.35.Gy Mechanical properties; surface strains
99.10.Cd Errata
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