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21 Mar 1988

Volume 52, Issue 12, pp. 939-1025

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High‐power seven‐element grating surface emitting diode laser array with 0.012° far‐field angle

N. W. Carlson, G. A. Evans, J. M. Hammer, M. Lurie, L. A. Carr, F. Z. Hawrylo, E. A. James, C. J. Kaiser, J. B. Kirk, W. F. Reichert, D. A. Truxal, J. R. Shealy, S. R. Chinn, and P. S. Zory

Appl. Phys. Lett. 52, 939 (1988); http://dx.doi.org/10.1063/1.99234 (3 pages) | Cited 12 times

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A coherent seven‐element grating surface emitting diode laser array with a predominant single‐lobe far‐field pattern having an angular divergence of 0.012° has been demonstrated. The extent of the emitting aperture was 4 mm, and the beam divergence was within 10% of the diffraction limit. Under pulsed operation the array had a peak output power of over 400 mW and a differential quantum efficiency of 15%.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.82.-m Integrated optics

Ultrafast switching characteristics of a bistable surface‐emitting multiple quantum well distributed Bragg reflector laser

Keisuke Kojima, Kazuo Kyuma, Susumu Noda, Jun Ohta, and Koichi Hamanaka

Appl. Phys. Lett. 52, 942 (1988); http://dx.doi.org/10.1063/1.99235 (3 pages) | Cited 4 times

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We describe an ultrafast switching operation of a bistable surface‐emitting distributed Bragg reflector laser. The rise time was as small as 12 ps and the fall time was 90 ps. Both are much smaller than those of conventional bistable laser diodes. Ths was realized by the effect of the multiple quantum well structure and a strong detuning.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Electro‐optic phase modulation in GaAs/AlGaAs quantum well waveguides

J. E. Zucker, T. L. Hendrickson, and C. A. Burrus

Appl. Phys. Lett. 52, 945 (1988); http://dx.doi.org/10.1063/1.99236 (3 pages) | Cited 49 times

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We present the first absolute measurements of the electric‐field‐induced refractive index change in GaAs/AlGaAs quantum well waveguides. Phase and intensity modulation are characterized as a function of wavelength both above and below the n=1 exciton resonances.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.79.Gn Optical waveguides and couplers

Growth of RhGa on GaAs (001) in a molecular beam epitaxy system

A. Guivarc’h, M. Secoué, and B. Guenais

Appl. Phys. Lett. 52, 948 (1988); http://dx.doi.org/10.1063/1.99237 (3 pages) | Cited 19 times

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Thin films of RhGa were grown on GaAs(001) in a molecular beam epitaxy system, by codeposition of rhodium and gallium from separated sources. The RhGa/GaAs contact is stable at least up to 550 °C and the film resistivity is low enough ( ρ≂36 μΩ cm) to allow applications in microelectronics. In spite of high linear misfits, the as‐deposited RhGa films exhibit the two following epitaxial arrangements related by a 90° rotation: [100](011)RhGa//[110](001)GaAs and [100](011)RhGa//[110](001)GaAs. After annealing at 550 °C, only one arrangement is observed.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
73.40.Ns Metal-nonmetal contacts

Photothermal absorption microprobe: Infrared spectroscopy of a single 1 μm organic particle

Marc A. Taubenblatt

Appl. Phys. Lett. 52, 951 (1988); http://dx.doi.org/10.1063/1.99238 (3 pages) | Cited 3 times

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This letter describes a technique, based on photothermal absorption, for performing infrared spectroscopy with high sensitivity to a single micrometer‐sized particle on a surface. The heat absorbed as a result of irradiation with a tunable infrared laser is monitored by observing the induced thermal expansion with a phase‐sensitive microscope (an interferometer with a beam focused to a few micrometer spot diameter). The technique has a high specificity to a particle over background from substrate materials because of the poor heat conductance and small thermal mass of the particle. Spectra have been obtained from particles as small as 1 μm in diameter (which corresponds to 0.5 pg of material) with the use of only a few milliwatts of power from a tunable CO2 laser.
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07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
78.30.Jw Organic compounds, polymers
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
07.60.Ly Interferometers

In situ measurement of the fractal dimensionality of ultrafine aerosol particles

A. Schmidt‐Ott

Appl. Phys. Lett. 52, 954 (1988); http://dx.doi.org/10.1063/1.99239 (3 pages) | Cited 59 times

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The fractal dimension df of gas phase agglomerated particles is measured in situ for the first time. This is done by comparing aerodynamic radii R0 and Rc1 before and after tempering. By tempering, agglomerates are collapsed into close‐packed clusters of df=3. It is shown that the equation M∼Rdf0, where M is the agglomerate mass, holds almost down to R0=Rc1 =Rm (monomer radius), making df a very useful quantity for aerosol characterization. The measurement yields df≂2.18 for Ag agglomerates with Rm≂7.5 nm. df is predicted to be material dependent.
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82.70.Rr Aerosols and foams
92.60.Mt Particles and aerosols
92.60.Vb Radiative processes, solar radiation

Reflectance‐difference spectroscopy system for real‐time measurements of crystal growth

D. E. Aspnes, J. P. Harbison, A. A. Studna, and L. T. Florez

Appl. Phys. Lett. 52, 957 (1988); http://dx.doi.org/10.1063/1.99240 (3 pages) | Cited 53 times

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We describe a reflectance‐difference spectroscopy system for real‐time in situ optical studies of crystal growth. Either changes in surface chemistry or surface structure can be monitored depending on wavelength.
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07.60.Rd Visible and ultraviolet spectrometers
68.35.B- Structure of clean surfaces (and surface reconstruction)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Two‐step barrier diodes

P. A. Schulz and C. E. T. Gonçalves da Silva

Appl. Phys. Lett. 52, 960 (1988); http://dx.doi.org/10.1063/1.99241 (3 pages) | Cited 11 times

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Transmission probabilities and current densities of a two‐step barrier heterostructure are calculated within the effective‐mass approximation as a function of electron energy and applied bias. This system shows negative differential resistance under forward bias, because of a quasibound state in a triangular well, and no resonance under reverse bias, in the current density. The two‐step barrier diode may show negative resistance in an ac field in the absence of a dc bias.
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85.30.Hi Surface barrier, boundary, and point contact devices
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling

Very shallow p+‐n junction formation by low‐energy BF+2 ion implantation into crystalline and germanium preamorphized silicon

M. C. Ozturk, J. J. Wortman, and R. B. Fair

Appl. Phys. Lett. 52, 963 (1988); http://dx.doi.org/10.1063/1.99242 (3 pages) | Cited 21 times

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Very low energy (6 keV) BF+2 ion implantation has been used to form very shallow (≤1000 Å) junctions in crystalline and Ge+ preamorphized Si. Low‐temperature furnace annealing was used to regrow the crystal, and rapid thermal annealing was used for dopant activation and radiation damage removal. In preamorphized samples, Ge+ implantation parameters were found to have an influence on B diffusion. Our results show that for temperatures higher than 950 °C, B diffusion, rather than B channeling, becomes the dominant mechanism in determining the junction depth. Computer simulations of the profiles show regions of retarded and enhanced B diffusion, which depend on surface and end‐of‐range damage, respectively.
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61.72.uf Ge and Si
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
66.30.J- Diffusion of impurities
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Laser‐modified molecular beam epitaxial growth of (Al)GaAs on GaAs and (Ca,Sr)F2/GaAs substrates

C. W. Tu, V. M. Donnelly, J. C. Beggy, F. A. Baiocchi, V. R. McCrary, T. D. Harris, and M. G. Lamont

Appl. Phys. Lett. 52, 966 (1988); http://dx.doi.org/10.1063/1.99243 (3 pages) | Cited 7 times

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We report results on the effect of a 193 nm ArF excimer laser on molecular beam epitaxial growth of (Al)GaAs on GaAs substrates and GaAs on lattice‐matched (Ca,Sr)F2/GaAs heterostructures. For growth on GaAs substrates, regions exposed to the laser show photoluminescence and excellent channeling as determined by Rutherford backscattering spectroscopy, whereas regions outside the laser show no photoluminescence. For growth on (Ca,Sr)F2 surfaces, laser irradiation inhibits the growth of GaAs for fluences above a critical value of 0.12 J/cm2 pulse because of laser‐induced desorption of absorbed Ga atoms, which are relatively weakly bound to (Ca,Sr)F2, compared to GaAs surfaces.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors
81.40.Tv Optical and dielectric properties related to treatment conditions
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Effect of annealing on the optical properties of HgTe‐CdTe superlattices

D. J. Leopold, J. G. Broerman, D. J. Peterman, and M. L. Wroge

Appl. Phys. Lett. 52, 969 (1988); http://dx.doi.org/10.1063/1.99244 (3 pages) | Cited 8 times

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HgTe‐CdTe superlattices of high crystalline quality, and with negligible interdiffusion, have been successfully grown at low substrate temperatures (150–170 °C) by molecular beam epitaxy. Optical spectra exhibiting multiple steplike absorption edge features have been measured on as‐grown and thermally annealed samples. The data provide valuable information on the superlattice subband structure when coupled with a suitable model. These results then can be used to obtain semiquantitative measures of layer interdiffusion along with such quantities as valence‐band offset and strain. To observe subband structure in the optical data, it is necessary to fabricate samples having homogeneous HgTe and CdTe layer thicknesses in the superlattice growth direction. Homogeneity of layers was achieved by carefully controlling elemental source fluxes and shutter times during the epitaxial growth process. Substantial changes in the subband‐related absorption structure could be induced by annealing the superlattice samples at temperatures just slightly above the growth temperature. An observed shift of the fundamental absorption edge to higher energy, as well as an apparent broadening of the subband absorption structure upon annealing, can be explained by interdiffusion of HgTe and CdTe layers.
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81.40.Tv Optical and dielectric properties related to treatment conditions
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Experimental and theoretical mobility of electrons in δ‐doped GaAs

G. Gillman, B. Vinter, E. Barbier, and A. Tardella

Appl. Phys. Lett. 52, 972 (1988); http://dx.doi.org/10.1063/1.99245 (3 pages) | Cited 30 times

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We have prepared and measured the mobility of several samples of planar‐doped GaAs. A maximum electron density of 2.7×1013 cm−2 has been obtained. Calculations of the mobility in a complete quasi‐two‐dimensional description are presented and compared with the measured results. Qualitatively, all features in the mobility are reproduced; the quantitative comparison may indicate that compensation effects play a role.
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72.20.Fr Low-field transport and mobility; piezoresistance
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
72.20.My Galvanomagnetic and other magnetotransport effects
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

GaAs/(In,Ga)As, p‐channel, multiple strained quantum well field‐effect transistors with high transconductance and high peak saturated drain current

T. E. Zipperian, L. R. Dawson, T. J. Drummond, J. E. Schirber, and I. J. Fritz

Appl. Phys. Lett. 52, 975 (1988); http://dx.doi.org/10.1063/1.99246 (3 pages) | Cited 27 times

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GaAs/In0.2 Ga0.8 As structures with two paralleled 10 nm quantum wells, modulation doped from the top, bottom, and middle with Be, have been fabricated into multiple strained quantum well field‐effect transistors (MQWFET’s) with 1×150 μm2 Ti/Au gates and examined both illuminated and in the dark at 300 and 77 K. Measurements on van der Pauw structures fabricated simultaneously with the transistors showed hole mobilities and sheet carrier densities to be 200, 3100, and 8040 cm2/V s, and 5.7×1012, 1.8×1012, and 1.5×1012 cm−2 , at 300, 77, and 4 K, respectively. Shubnikov–de Haas measurements made below 4 K verified the existence of a double‐channel two‐dimensional hole gas with a strain‐shifted light‐hole ground state in the quantum wells with an effective hole mass of 0.15 me . A representative p‐channel MQWFET showed well‐saturated common‐source output characteristics, both illuminated and unilluminated, at all measurement temperatures. Measured peak extrinsic transconductances and peak saturated drain currents for the unilluminated 1 μm device were 31 and 60 mS/mm and 27 and 67 mA/mm, at 300 and 77 K, respectively.
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85.30.Tv Field effect devices
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.61.Ey III-V semiconductors

Molecular beam epitaxial growth and characterization of 2‐in.‐diam Hg1−xCdxTe films on GaAs (100) substrates

M. D. Lange, S. Sivananthan, X. Chu, and J. P. Faurie

Appl. Phys. Lett. 52, 978 (1988); http://dx.doi.org/10.1063/1.99247 (3 pages) | Cited 16 times

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Hg1−xCdxTe films with 2 in. diameters have been grown by molecular beam epitaxy on GaAs (100) substrates. These films were grown in both the (100) and (∼(111)) B crystallographic orientations and in both conduction types. They were characterized by in situ electron diffraction, infrared absorption, and van der Pauw dc Hall measurements. Their surfaces were shiny and mirrorlike from center to edge. The Cd concentrations (x) of these films were very uniform, exhibiting standard deviations (Δx) as low as 0.7% of the mean (math). Their thicknesses also were uniform within 0.6%. These films were completely uniform in their conduction types; that is, the n‐type films were entirely n type, and likewise for the p‐type films. The Hall mobilities of these films show them to be of high quality, with values as high as 6.7×102 cm2 V−1 s−1 for the p‐type (x=0.22) and 1.8×105 cm2 V−1 s−1 for the n‐type films (x=0.21). These results represent an important achievement toward the future of infrared detector technology.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
73.61.Ey III-V semiconductors

High‐field transport in an InGaAs‐InP superlattice grown by chemical beam epitaxy

T. H. H. Vuong, D. C. Tsui, and W. T. Tsang

Appl. Phys. Lett. 52, 981 (1988); http://dx.doi.org/10.1063/1.99248 (3 pages) | Cited 26 times

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We report the observation of high‐field‐domain formation in the transport through an In0.53Ga0.47As‐InP superlattice. The current‐voltage characteristics show two series of sharp negative differential resistances which are due to tunneling from the 1 to 2 and from the 1 to 3 subbands, respectively. Within each series the negative differential resistances occur at nearly equal intervals in the bias voltage. For the first series, the period in the bias voltage increases as the sample is cooled from 77 to 4.2 K. In contrast, the period for the second series remains constant within the same temperature range. We explain these observations by the effect of phonon scattering on the various subbands.
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73.50.Fq High-field and nonlinear effects
73.61.Ey III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Evidence of room‐temperature exciton by magnetophotoreflectance in epitaxial GaAs and quantum well structures

X. L. Zheng, D. Heiman, B. Lax, F. A. Chambers, and K. A. Stair

Appl. Phys. Lett. 52, 984 (1988); http://dx.doi.org/10.1063/1.99249 (3 pages) | Cited 10 times

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Photoreflectance experiments with magnetic fields up to 14.5 T are performed on epitaxial GaAs and GaAs/Ga1−xAlxAs quantum well samples at room temperature and 2 K. Our experiments show unique and direct evidence that photoreflectance structures are excitonic transitions in all of the above cases.
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71.35.-y Excitons and related phenomena
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Photocurrent enhancement in a GaAs metal‐semiconductor‐metal photodetector due to ultrasmall Au islands

W. C. Koscielniak, R. M. Kolbas, M. A. Littlejohn, and B. W. Licznerski

Appl. Phys. Lett. 52, 987 (1988); http://dx.doi.org/10.1063/1.99250 (3 pages) | Cited 1 time

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A new GaAs metal‐semiconductor‐metal photodetector has been demonstrated which uses ultrasmall gold islands deposited on a lightly doped epitaxial layer. The fabricated devices showed an appreciable photocurrent enhancement with respect to conventional metal‐semiconductor‐metal devices at a bias of less than 4 V and soft breakdown characteristics above 4 V. Details of the fabrication procedure are presented, and some possible mechanisms to explain this enhancement are suggested.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.Hi Surface barrier, boundary, and point contact devices
72.40.+w Photoconduction and photovoltaic effects
73.40.Sx Metal-semiconductor-metal structures

Highly resolved excitonic spectra in GaAs/AlGaAs superlattices grown by organometallic chemical vapor deposition

B. J. Skromme, R. Bhat, and M. A. Koza

Appl. Phys. Lett. 52, 990 (1988); http://dx.doi.org/10.1063/1.99251 (3 pages) | Cited 1 time

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We report the first observation of highly resolved photoluminescence and excitation spectra in GaAs/AlGaAs superlattices grown by organometallic chemical vapor deposition. Luminescence linewidths as narrow as 0.5 meV, and negligible Stokes shifts between luminescence and excitation peaks are measured for samples with 80–280 Å GaAs wells and 20 Å Al0.3Ga0.7As barriers. Both free heavy and light hole exciton and neutral donor‐bound exciton peaks are observed in luminescence; excitation and temperature dependence is studied over the ranges 0.28 mW/cm2–10 W/cm2 and 1.7–30 K, respectively. The bound exciton luminescence saturates with respect to that of free excitons at high excitation, and rapid dissociation into free excitons is observed as the temperature increases. The free exciton peaks broaden at high temperature, while the bound exciton peaks remain sharp.
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78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Barrier and recombination effects in the base‐emitter junction of heterostructure bipolar transistors

Sandip Tiwari and D. J. Frank

Appl. Phys. Lett. 52, 993 (1988); http://dx.doi.org/10.1063/1.99252 (3 pages) | Cited 4 times

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We show that high current densities with minimal space charge region recombination current can be obtained by a suitable choice of alloy grading parameters and doping of the junction. It is also shown that compositionally graded, but uniformly doped emitter junctions require a minimum doping level in the emitter in order to suppress an excess barrier that results from alloy grading in the presence of high current injection. The complexity of recombination phenomenon at a heterojunction due to its dependence on doping, alloy grading, and bias is demonstrated and related to the injection behavior. We conclude that use of a minimum doping with parabolic alloy grading is an adequate compromise between high injection behavior and recombination behavior for practical devices.
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85.30.Pq Bipolar transistors
85.30.De Semiconductor-device characterization, design, and modeling
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Effects of hot sources on residual doping in GaAs grown by molecular beam epitaxy

R. N. Sacks and R. A. Pastorello

Appl. Phys. Lett. 52, 996 (1988); http://dx.doi.org/10.1063/1.99198 (3 pages)

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A study of the effects of impurities evolving from a hot (1350–1500 °C) empty effusion cell on the residual doping concentrations in GaAs grown by molecular beam epitaxy (MBE) has been made. The influence of these impurities on electron concentrations in highly doped GaAs:Si has also been investigated. p‐type residual doping was seen in all cases, with 1×1016/cm3 being the highest level observed. More typical were concentrations in the mid‐to‐high 1014 range after the empty cell had been properly degassed. While most of the acceptors appear to be C, there is some evidence that N may be involved at the higher concentrations. No effect from the hot source on the doping level of GaAs:Si with n=4×1018/cm3 was seen, showing that effusion cell evolved impurities are not responsible for limiting high electron concentrations in MBE‐grown GaAs:Si.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

High conductivity polycrystalline silicon obtained by molecular beam deposition

S. L. Delage, S.‐J. Jeng, D. Jousse, and S. S. Iyer

Appl. Phys. Lett. 52, 999 (1988); http://dx.doi.org/10.1063/1.99199 (3 pages) | Cited 2 times

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The structural and electrical properties have been investigated of antimony doped polycrystalline silicon films obtained by molecular beam deposition on oxidized silicon substrates. We show that low‐resistivity films with smooth morphology are obtained by solid phase crystallization of antimony doped amorphous silicon layers deposited at 250 °C. A resistivity of 4.3 mΩ cm is obtained by crystallizing the films at temperatures as low as 650 °C for 15 min. In situ crystallization of the amorphous silicon is absolutely necessary to achieve low resistivities. We also show that direct deposition above 650 °C gives rise to polycrystalline silicon with much higher resistivities.
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68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Nearly ideal electronic surfaces on naked In0.53Ga0.47As quantum wells

E. Yablonovitch, H. M. Cox, and T. J. Gmitter

Appl. Phys. Lett. 52, 1002 (1988); http://dx.doi.org/10.1063/1.99226 (3 pages) | Cited 25 times

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We have discovered that hydroxide‐coated In0.53Ga0.47Ag has the lowest known surface recombination velocity of any III‐V semiconductor. To demonstrate the excellent electronic quality of such interfaces, we have measured the quantum shifts in the room‐temperature luminescence spectrum of ‘‘naked’’ In0.53Ga0.47As quantum wells (i.e., quantum wells with one face uncovered) in the thickness range 15–50 Å. These nearly ideal electronic surfaces should allow the fabrication of lateral quantum confinement structures that operate at room temperature.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Mass‐spectrometer‐controlled fabrication of Si/Ge superlattices

R. H. M. van de Leur, A. J. G. Schellingerhout, J. E. Mooij, and F. Tuinstra

Appl. Phys. Lett. 52, 1005 (1988); http://dx.doi.org/10.1063/1.99227 (3 pages) | Cited 4 times

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We have used a quadrupole mass spectrometer to control deposition rates during fabrication of compositionally modulated Si/Ge superlattices. Its performance has been evaluated by an x‐ray diffraction study of a superlattice. The variation of the Si deposition rate was less than 3% during the whole deposition time of 30 min. This proves that a mass spectrometer can be successfully employed as rate monitor in Si molecular beam epitaxy systems.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
07.75.+h Mass spectrometers

Structure and superconducting properties of Y1Ba2Cu3O7−δ films prepared by transversely excited atmospheric pressure CO2 pulsed laser evaporation

S. Miura, T. Yoshitake, T. Satoh, Y. Miyasaka, and N. Shohata

Appl. Phys. Lett. 52, 1008 (1988); http://dx.doi.org/10.1063/1.99228 (3 pages) | Cited 10 times

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See Also: Erratum

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Superconducting Y1Ba2Cu3O7−δ films were prepared by TEA‐CO2 pulsed laser evaporation. On SrTiO3(100) the a axis was oriented perpendicular to the substrate surface, while the 〈110〉 axis was oriented perpendicular to the substrate surface on SrTiO3(110). Sharp resistive superconducting transitions with zero resistance at 86 K on SrTiO3(110) and at 83 K on SrTiO3(100) were observed.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

High Tc superconducting films of Y‐Ba‐Cu oxide prepared by low‐pressure plasma spraying

K. Tachikawa, I. Watanabe, S. Kosuge, M. Kabasawa, T. Suzuki, Y. Matsuda, and Y. Shinbo

Appl. Phys. Lett. 52, 1011 (1988); http://dx.doi.org/10.1063/1.99229 (3 pages) | Cited 18 times

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A low‐pressure plasma spraying technique for depositing high Tc Y‐Ba‐Cu‐O thick films has been developed. Films with a thickness range of 20–100 μm have been prepared by using Y0.3Ba0.7CuOx powders. After post‐annealing in oxygen for 1 h at 950 °C, the films, which were deposited on a nimonic alloy substrate heated at 650 °C during spraying, exhibited a zero resistance temperature of 90.6 K with a transition width (90%–10%) of 2 K and a critical current density (77 K, 0 T) of 690 A/cm2.
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74.78.-w Superconducting films and low-dimensional structures
81.15.Rs Spray coating techniques
74.25.Sv Critical currents
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