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28 Mar 1988

Volume 52, Issue 13, pp. 1031-1105

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High‐resolution capacitance measurement and potentiometry by force microscopy

Yves Martin, David W. Abraham, and H. Kumar Wickramasinghe

Appl. Phys. Lett. 52, 1103 (1988); http://dx.doi.org/10.1063/1.99224 (3 pages) | Cited 335 times

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We demonstrate the usefulness and high sensitivity of the atomic force microscope (AFM) for imaging surface dielectric properties and for potentiometry through the detection of electrostatic forces. Electric forces as small as 10−10 N have been measured, corresponding to a capacitance of 10−19 farad. The sensitivity of our AFM should ultimately allow us to detect capacitances as low as 8×10−22 F. The method enables us to detect the presence of dielectric material over Si, and to measure the voltage in a p‐n junction with submicron spatial resolution.
Show PACS
07.50.-e Electrical and electronic instruments and components
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
73.25.+i Surface conductivity and carrier phenomena
77.90.+k Other topics in dielectrics, piezoelectrics, and ferroelectrics and their properties (restricted to new topics in section 77)
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