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4 Apr 1988

Volume 52, Issue 14, pp. 1111-1195

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Superpolished single‐crystal molybdenum mirror for x‐ray ultraviolet to x‐ray radiation

K. Yoshida, K. Takeuchi, Y. Kato, E. Fujiwara, K. Yamashita, K. Kurosawa, W. Sasaki, and H. Okamoto

Appl. Phys. Lett. 52, 1111 (1988); http://dx.doi.org/10.1063/1.99177 (3 pages) | Cited 1 time

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High‐quality single‐crystal molybdenum (Mo) fabricated by a secondary recrystallization method has been polished with a new polishing technique. The superpolished surface of the Mo single crystal has a surface roughness of 3.5 Å rms. This superpolished single‐crystal Mo has been used for a high‐power electron beam pumped argon excimer laser (λ=126 nm) as a cavity mirror. Peak output power of more than 3 MW has been achieved without any damage to the mirror surface.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Lt Gas lasers including excimer and metal-vapor lasers
81.05.Bx Metals, semimetals, and alloys
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Low‐threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy

H. K. Choi, J. W. Lee, J. P. Salerno, M. K. Connors, B‐Y. Tsaur, and J. C. C. Fan

Appl. Phys. Lett. 52, 1114 (1988); http://dx.doi.org/10.1063/1.99178 (2 pages) | Cited 8 times

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Low‐threshold double‐heterostructure ridge‐waveguide lasers have been fabricated in GaAs/AlGaAs layers grown on Si by organometallic vapor phase epitaxy. The pulsed threshold current of the best ridge‐waveguide laser is 50 mA, with differential quantum efficiency of about 9% per facet. Broad‐area lasers fabricated on the same wafer have pulsed threshold current densities as low as 300 A/cm2 .
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Spatial light modulators using charge‐coupled‐device addressing and electroabsorption effects in GaAs/AlGaAs multiple quantum wells

K. B. Nichols, B. E. Burke, B. F. Aull, W. D. Goodhue, B. F. Gramstorff, C. D. Hoyt, and A. Vera

Appl. Phys. Lett. 52, 1116 (1988); http://dx.doi.org/10.1063/1.99179 (3 pages) | Cited 3 times

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We describe the fabrication and performance of the first spatial light modulators (SLM’s) which combine addressing in AlGaAs charge‐coupled devices (CCD’s) and electroabsorption effects in GaAs/AlGaAs multiple quantum wells (MQW’s). One‐dimensional, sixteen‐stage, three‐phase AlGaAs CCD’s with semitransparent gates were fabricated on the surface of the SLM. The optical signal propagates normal to the surface and enters the SLM through the gates. The transmission of this signal through the MQW is then modulated according to the channel voltage of the CCD’s. The maximum contrast ratio at 847 nm was measured to be 1.45:1 for these GaAs/AlGaAs ‐based SLM’s.
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42.79.Hp Optical processors, correlators, and modulators
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
85.60.-q Optoelectronic devices

Linewidth broadening due to longitudinal spatial hole burning in a long distributed feedback laser

Ming‐Chiang Wu, Yu‐hwa Lo, and Shyh Wang

Appl. Phys. Lett. 52, 1119 (1988); http://dx.doi.org/10.1063/1.99180 (3 pages) | Cited 3 times

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The spectral linewidth of a long distributed feedback (DFB) laser above threshold at high output power is investigated theoretically. Longitudinal spatial hole burning (LSHB) is shown to have important effects on the lasing characteristics and the broadening of linewidth. A four‐wave coupled mode equation is developed to describe the LSHB phenomenon. The threshold gain and the carrier distribution are solved self‐consistently above threshold at various output powers. The simulation results show that the power‐linewidth product can increase by a factor greater than 2 due to LSHB for long DFB lasers. This theory has important implications on the limits of linewidth reduction by increasing the length of DFB lasers and on possible future device design for coherent optical system.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Active pulse compression using an integrated electro‐optic phase modulator

Brian H. Kolner

Appl. Phys. Lett. 52, 1122 (1988); http://dx.doi.org/10.1063/1.99181 (3 pages) | Cited 29 times

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We describe a pulse compression technique that uses integrated electro‐optic phase modulators to linearly chirp optical pulses for compression by a dispersive delay line. In contrast to passive chirp techniques such as self‐phase modulation, this approach of active pulse compression does not depend on the optical power and thus shows promise for application to low‐power solid‐state lasers as an alternative to mode locking for realizing compact picosecond sources. We have demonstrated this technique by compressing the pulses from a mode‐locked neodymium:yttrium aluminum garnet laser from 100 to 45 ps.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.79.Hp Optical processors, correlators, and modulators
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.82.-m Integrated optics

Demonstration of all‐optical modulation in a vertical guided‐wave nonlinear coupler

Paul R. Berger, Yi Chen, Pallab Bhattacharya, Jagadeesh Pamulapati, and G. C. Vezzoli

Appl. Phys. Lett. 52, 1125 (1988); http://dx.doi.org/10.1063/1.99182 (3 pages) | Cited 11 times

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The performance characteristics of an AlGaAs dual waveguide vertical coupler with a nonlinear GaAs/AlGaAs multiquantum well coupling medium are demonstrated. The structure was grown by molecular beam epitaxy and fabricated by optical lithography and ion milling. The nonlinear coupling and modulation behavior is identical to that predicted theoretically. The nonlinear index of refraction and critical input power are estimated to be n2=1.67×10−5 cm2/W and Pc=170 W/cm2, respectively. This device also allows reliable measurement of the nonlinear refractive index for varying quantum well and optical excitation parameters.
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42.79.Gn Optical waveguides and couplers
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.65.-k Nonlinear optics
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Experimental measurement of the conditions for the planarity of laser‐driven shock waves

David Salzmann, Irith Gilath, and Benyamin Arad

Appl. Phys. Lett. 52, 1128 (1988); http://dx.doi.org/10.1063/1.99183 (2 pages) | Cited 4 times

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Laser‐driven shock wave experiments have been conducted in the regime of 1011 W/cm2 in which incipient spall in a 300‐μm‐thick aluminum foil was used as an indicator of a constant shock state. Laser input energy and deposition spot size were varied to obtain a condition of incipient spall. The results agree with previous models in that a constant laser irradiance produces a constant shock state. The effective diameter of the laser is indicated to be about 0.44 mm larger than the laser spot diameter due to lateral effects during the shock generation or propagation phases.
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62.50.-p High-pressure effects in solids and liquids
46.80.+j Measurement methods and techniques in continuum mechanics of solids

Friction and wear measurements of sputtered MoSx films amorphized by ion bombardment

Niels Jørgen Mikkelsen, Jacques Chevallier, Gunnar Sørensen, and Christen A. Straede

Appl. Phys. Lett. 52, 1130 (1988); http://dx.doi.org/10.1063/1.99666 (3 pages) | Cited 23 times

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The present study presents an experimental evidence for amorphization of rf sputtered MoSx films by ion bombardment. Even at low doses (3×1015 ions/cm2) of 400 keV argon ions a complete amorphization was confirmed by x‐ray diffraction analysis and transmission electron microscopy. As a result of the ion bombardment the film density increased 100% to almost the bulk value for MoS2. The friction coefficient for ion beam amorphized MoSx was measured to be 0.04 in agreement with the values reported for crystalline films but disagreeing considerably with the friction coefficient of 0.4 previously reported for amorphous films.
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68.60.Bs Mechanical and acoustical properties
68.55.Nq Composition and phase identification
61.80.Jh Ion radiation effects
81.40.Pq Friction, lubrication, and wear

Comparison of low‐pressure and plasma‐enhanced chemical vapor deposited tungsten thin films

W. M. Greene, W. G. Oldham, and D. W. Hess

Appl. Phys. Lett. 52, 1133 (1988); http://dx.doi.org/10.1063/1.99184 (3 pages) | Cited 9 times

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Tungsten thin films deposited by low‐pressure and plasma‐enhanced chemical vapor deposition are characterized to detail the effect of plasma‐surface interactions on nucleation and growth. Transition from α‐ to β‐W is observed as the H2/WF6 flow ratio is decreased from 10/1 to 1/1 in plasma‐enhanced deposition; transition from α‐W to amorphous W is observed under the same conditions in low‐pressure chemical vapor deposition. The temperature coefficient of resistivity varies from 4.9 to 2.0 ppthou/K as the plasma‐deposited films switch from α to β phase; the temperature coefficient of resistivity varies from 3.2 to −0.5 ppthou/K as the low‐pressure chemically vapor deposited films become amorphous. The increased crystallinity and metastable phase formation in plasma environments are attributable to higher effective surface temperature resulting in enhanced surface mobility and grain growth.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.At Metal and metallic alloys
68.55.-a Thin film structure and morphology
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Interaction of an electron beam with CdCl2 thin films

J. Bloch, N. Shamir, and Y. Zeiri

Appl. Phys. Lett. 52, 1136 (1988); http://dx.doi.org/10.1063/1.99667 (3 pages) | Cited 2 times

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The effect of electron irradiation on CdCl2 thin films was studied using Auger and electron loss spectroscopies. It was found that coloration takes place together with a reduction of the Cl/Cd intensity ratio. The loss spectrum is also changed during irradiation. It was shown that the irradiation‐induced changes can diffuse out of the irradiated area.
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61.80.Fe Electron and positron radiation effects
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
78.66.-w Optical properties of specific thin films

Oxides grown on textured single‐crystal silicon for enhanced conduction

Y. Fong, A. T. Wu, P. K. Ko, and C. Hu

Appl. Phys. Lett. 52, 1139 (1988); http://dx.doi.org/10.1063/1.99668 (3 pages) | Cited 3 times

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The electrical properties and integrity of oxides grown on textured single‐crystal silicon (TSC oxides) are investigated and are compared to oxides grown on untextured single‐crystal silicon (normal oxides) and oxides grown on polycrystalline silicon (polyoxides). The 230 Å TSC oxide exhibited enhanced electron injection in both polarities, reducing the voltage necessary for JG=+1 mA/cm2 from 21 V for normal 230 Å oxides to 5 V. This made the 230 Å TSC oxide approximately equivalent to a 60 Å normal oxide. The electron trapping rate for the TSC oxide was similar to that of 230 Å normal oxides but is much smaller than that of polyoxides. Charge‐to‐breakdown (QBD) measurements showed a much better QBD histogram (large area capacitors) for the TSC oxide than for 230 Å and 60 Å normal oxides.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
73.61.Ng Insulators

Photoluminescence broadening mechanisms in high quality GaInAs‐AlInAs quantum well structures

A. S. Brown, J. A. Henige, and M. J. Delaney

Appl. Phys. Lett. 52, 1142 (1988); http://dx.doi.org/10.1063/1.99185 (2 pages) | Cited 8 times

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GaInAs‐AlInAs quantum well structures have been analyzed by low‐temperature photoluminescence. The photoluminescence linewidth (full width at half‐maximum) of thicker quantum wells (>10 nm) grown directly on AlInAs buffer layers shows that an inverse relationship exists between interface quality and AlInAs alloy quality in agreement with the theoretical analysis of J. Singh, S. Dudley, B. Davies, and K. K. Bajaj [J. Appl. Phys. 60, 3167 (1986)]. Thinner wells show much improved luminescence properties due to a growth of previous wells.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Direct writing of GaAs monolayers by laser‐assisted atomic layer epitaxy

N. H. Karam, H. Liu, I. Yoshida, and S. M. Bedair

Appl. Phys. Lett. 52, 1144 (1988); http://dx.doi.org/10.1063/1.99186 (3 pages) | Cited 13 times

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Direct writing of GaAs epitaxial monolayers has been achieved by laser‐assisted atomic layer epitaxy (LALE) technique on GaAs substrates. Sequential exposures of the substrate to trimethylgallium (TMG) and arsine (AsH3) were separated by periods of hydrogen purging to prevent mixing. Laser beam scanning of the samples took place either during the flow of TMG or AsH3. The selectively grown films at the one monolayer per cycle condition have a mirrorlike surface and a flat top thickness profile. LALE has been realized at temperatures as low as 300 °C and over a wide range of TMG flux and laser power densities. Photoluminescence results of the deposited films show that their quality are comparable to those achieved by conventional ALE.
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81.65.-b Surface treatments
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology

Novel high voltage transistor fabricated using the in situ junctions in a Si‐TaSi2 eutectic composite

B. M. Ditchek, T. R. Middleton, P. G. Rossoni, and B. G. Yacobi

Appl. Phys. Lett. 52, 1147 (1988); http://dx.doi.org/10.1063/1.99187 (3 pages) | Cited 6 times

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Transistor action has been observed for the first time in a Si‐TaSi2 eutectic composite. These devices, utilizing the in situ cylindrical Schottky junctions between the Si matrix and the TaSi2 rod phase, have characteristics typical of a metal‐semiconductor field‐effect transistor (MESFET). However, unlike a conventional planar device like a MESFET, eutectic transistors are resistant to avalanche breakdown. A device is demonstrated that blocks 600 V, a value that is three times larger than would be expected for a planar device of the same carrier concentration.
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85.30.Tv Field effect devices
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
85.30.De Semiconductor-device characterization, design, and modeling
73.30.+y Surface double layers, Schottky barriers, and work functions

Preparation and characterization of some AIBIICV type semiconductors

R. Bacewicz and T. F. Ciszek

Appl. Phys. Lett. 52, 1150 (1988); http://dx.doi.org/10.1063/1.99188 (2 pages) | Cited 34 times

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Crystals of LiZnP, LiCdP, and LiZnAs are prepared by direct fusion of constituent elements. All three materials are found to be p‐type semiconductors. Absorption edge and photoconductivity spectra are measured. Band gaps are estimated to be 1.25 eV for LiZnAs, 1.3 eV for LiCdP, and 2.1 eV for LiZnP.
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81.20.-n Methods of materials synthesis and materials processing
78.20.-e Optical properties of bulk materials and thin films
72.40.+w Photoconduction and photovoltaic effects
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Kinematical simulation of high‐resolution x‐ray diffraction curves of GexSi1−x/Si strained‐layer superlattices: A structural assessment

J. M. Vandenberg, J. C. Bean, R. A. Hamm, and R. Hull

Appl. Phys. Lett. 52, 1152 (1988); http://dx.doi.org/10.1063/1.99189 (3 pages) | Cited 22 times

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High‐resolution x‐ray diffraction (HRXRD) measurements of GexSi1−x/Si strained‐layer superlattices are carried out using a four‐crystal monochromator. A wide asymmetric range of extremely sharp higher order x‐ray satellite peaks is observed indicating a well‐defined strained‐layer superlattice with abrupt interfaces. This is further confirmed by cross‐section transmission electron microscopy. Using a kinematical diffraction step model which assumes ideally sharp interfaces, the thickness, strain, and composition of the GexSi1−x well could be extracted. Excellent agreement between measured and simulated x‐ray satellite patterns is achieved. These results show that HRXRD together with kinematical simulation provides a powerful tool to evaluate the structural perfection of GexSi1−x/Si strained‐layer superlattices.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.-a Thin film structure and morphology

Characterization of Mn‐doped InAsxP1−x grown by organometallic vapor phase epitaxy

K. Huang and B. W. Wessels

Appl. Phys. Lett. 52, 1155 (1988); http://dx.doi.org/10.1063/1.99190 (3 pages) | Cited 15 times

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Epitaxial layers of InAsxP1−x:Mn are grown by organometallic vapor phase epitaxy on (100) oriented InP substrates. The InAsxP1−x layers are deliberately doped with Mn from the vapor phase. Photoluminescent properties are studied as a function of alloy composition for x=0–0.52. Experimental data indicate that the manganese acceptor level is pinned to the vacuum level for the range of alloy compositions studied.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Nq Composition and phase identification
73.20.Hb Impurity and defect levels; energy states of adsorbed species
78.55.Cr III-V semiconductors

Damage assessment in low‐dose Si‐implanted GaAs by Raman spectroscopy

Joachim Wagner

Appl. Phys. Lett. 52, 1158 (1988); http://dx.doi.org/10.1063/1.99191 (3 pages) | Cited 12 times

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Allowed and forbidden first‐order as well as resonant second‐order Raman scattering has been used to study implantation damage in low‐dose (5×1011–1×1013 cm−2) 29Si+‐implanted GaAs. Symmetry forbidden scattering by longitudinal optical (LO) phonons and allowed 2LO scattering were found to be most sensitive to lattice damage for the range of implantation doses given above. The intensity ratio of the 2LO peak to the forbidden LO phonon line measures variations in the implantation dose with an accuracy better than ±7% for an average dose of 2×1012 cm−2. The potential of spatially resolved Raman spectroscopy for the assessment of homogeneity in as‐implanted GaAs wafers has been demonstrated.
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61.72.uf Ge and Si
61.80.Jh Ion radiation effects
78.30.Fs III-V and II-VI semiconductors
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Spin‐dependent recombination in irradiated Si/SiO2 device structures

R. L. Vranch, B. Henderson, and M. Pepper

Appl. Phys. Lett. 52, 1161 (1988); http://dx.doi.org/10.1063/1.99192 (3 pages) | Cited 45 times

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We report studies of spin‐dependent recombination at the Si/SiO2 interface in electron irradiated (100) and (111) p‐channel metal‐oxide‐silicon field‐effect transistors and metal‐oxide‐silicon wafers. Electron spin resonance transitions on the Pb center increase the recombination current at the Si/SiO2 interface by 2–3 parts in 104. The results are interpreted using a model involving the recombination of electrons and holes at Pb centers with which they are spatially correlated.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.Hb Impurity and defect levels; energy states of adsorbed species
85.30.Tv Field effect devices
76.30.Da Ions and impurities: general

Surface plasmon polariton enhanced light emission from Schottky diodes

A. Köck, W. Beinstingl, K. Berthold, and E. Gornik

Appl. Phys. Lett. 52, 1164 (1988); http://dx.doi.org/10.1063/1.99193 (3 pages) | Cited 17 times

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We have investigated the light emission from forward‐ and reverse‐biased sinusoidally structured Ag/n‐GaAs Schottky diodes. Sinusoidally structured Schottky junctions show increased light emission because of the radiative decay of excited surface plasmon polaritons, resulting in drastically enhanced quantum efficiency. A model explaining excitation and emission of surface plasmon polaritons is presented.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.30.+y Surface double layers, Schottky barriers, and work functions
78.60.Fi Electroluminescence

Monte Carlo study of electron heating and enhanced thermionic emission by hot phonons in heterolayers

Kiwook Kim, Karl Hess, and Federico Capasso

Appl. Phys. Lett. 52, 1167 (1988); http://dx.doi.org/10.1063/1.99194 (3 pages) | Cited 7 times

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We present a numerical study of the effects of nonthermal phonon distributions on electron transport across heterolayers. For the microscopic analysis of both the electron and phonon dynamics, an ensemble Monte Carlo method has been used which includes a realistic band structure. It is observed that the abrupt energy gain at the heterointerface generates significant perturbations in the phonon distribution through the subsequent relaxation and heats the electron distribution because of the reabsorption of nonequilibrium phonons. The influence of a wide range of operating conditions on hot‐phonon effects is also discussed.
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73.50.Bk General theory, scattering mechanisms
63.20.K- Phonon interactions
79.40.+z Thermionic emission
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Surface processes in CF4/O2 reactive etching of silicon

Gottlieb S. Oehrlein, Steve W. Robey, and J. Lennart Lindström

Appl. Phys. Lett. 52, 1170 (1988); http://dx.doi.org/10.1063/1.99195 (3 pages) | Cited 30 times

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Silicon surfaces etched in CF4/O2 plasma have been characterized with the use of in situ x‐ray photoemisson spectroscopy. A SiFxOy layer on elemental silicon is formed under all conditions. For oxygen percentages greater than 5% in the feed gas, the oxygen content of the film and the film thickness increase, whereas the fluorine content of the film decreases. The Si etch rate decreases also and appears to be controlled primarily by the thickness of the SiFxOy layer, rather than by the F atom concentration in the gas phase, which increases up to 15% O2 addition.
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81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

High‐rate growth at low temperatures by free‐jet molecular flow: Surface‐reaction film‐formation technology

T. Ohmi, M. Morita, T. Kochi, M. Kosugi, H. Kumagai, and M. Itoh

Appl. Phys. Lett. 52, 1173 (1988); http://dx.doi.org/10.1063/1.99196 (3 pages) | Cited 12 times

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Surface‐reaction film‐formation technology of epitaxial Si and polcrystalline silicon using free‐jet molecular flow is proposed. High‐rate (∼0.5 μm/min or higher) growth of homoepitaxial Si films with high crystallographic perfection has been achieved at temperatures as low as 600 °C without the chemical by‐product deposition on the inner surface of the reaction chamber. This result also implies that this system has the cleaning‐free function. The film‐formation mechanism appears to be dominated by the chemical reaction on the substrate surface without the vapor phase reaction.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.55.-a Thin film structure and morphology

Line shape of the optical dielectric function

J. W. Garland, H. Abad, M. Viccaro, and P. M. Raccah

Appl. Phys. Lett. 52, 1176 (1988); http://dx.doi.org/10.1063/1.99641 (3 pages) | Cited 30 times

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A systematic study of the optical dielectric function by spectroscopic ellipsometry and electroreflectance has shown that the proper functional form for the Green’s function for an electron‐hole pair in GaAs or CdTe is primarily Gaussian, not Lorentzian as is commonly assumed, although it is primarily Lorentzian for Hg1−xCdxTe. The Lorentzian part of the broadening is shown to measure the alloy, impurity, and defect scattering.
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77.22.Ch Permittivity (dielectric function)
78.20.Jq Electro-optical effects
72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)

Field‐induced anisotropic conductivity in the granular superconducting ceramic oxide YBa2Cu3O7−y

Ch. Laurent, H. W. Vanderschueren, P. Tarte, A. Rulmont, and M. Ausloos

Appl. Phys. Lett. 52, 1179 (1988); http://dx.doi.org/10.1063/1.99669 (3 pages) | Cited 3 times

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A novel experimental procedure has been achieved in order to study the anisotropy properties of the new superconducting oxide ceramics. A magnetic field induced anisotropy confirms the drastic role of the orientation of the crystallites on the knee appearance when cooling the granular Y1Ba2Cu3O7−y superconductor below the ‘‘critical temperature’’ Tc. The results are explained through the preferential destruction of two‐dimensional supercurrent paths due to the upper critical field anisotropy.
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74.25.N- Response to electromagnetic fields
74.70.-b Superconducting materials other than cuprates
74.81.Bd Granular, melt-textured, amorphous, and composite superconductors
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
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