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25 Apr 1988

Volume 52, Issue 17, pp. 1371-1448

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Very low threshold buried heterostructure quantum well lasers by laser‐assisted disordering

J. E. Epler, R. L. Thornton, and T. L. Paoli

Appl. Phys. Lett. 52, 1371 (1988); http://dx.doi.org/10.1063/1.99119 (3 pages) | Cited 11 times

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Data are presented on high‐quality buried heterostructure lasers fabricated by laser‐assisted disordering of GaAs‐AlGaAs quantum well heterostructures. The typical cw threshold current is 4 mA and the maximum power output is 27 mW. The devices exhibit single fundamental mode operation with 34 dB attenuation of longitudinal side modes.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

1.06–0.53 μm second harmonic generation using congruent lithium niobate

E. O. Ammann and S. Guch

Appl. Phys. Lett. 52, 1374 (1988); http://dx.doi.org/10.1063/1.99688 (3 pages) | Cited 3 times

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Efficient 1.06–0.53 μm second harmonic generation (SHG) has been achieved using congruent lithium niobate. Index inhomogeneities are induced in the lithium niobate, but saturate in the vicinity of the beam thereby allowing efficient SHG to occur. SHG conversion efficiencies of 50% were typically achieved with crystal lengths as short as 9 mm and fundamental power densities of 35 MW/cm2.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Microwave phase stability of directly modulated semiconductor injection lasers

K. Y. Lau

Appl. Phys. Lett. 52, 1377 (1988); http://dx.doi.org/10.1063/1.99120 (2 pages) | Cited 1 time

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The microwave phase stability of directly modulated high‐speed semiconductor lasers was studied. It was shown that optical feedback had a serious effect on microwave phase stability of the modulated signal and must be reduced to below −40 dB for satisfactory phase performance.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Dual wavelength CO2‐N2‐CS2 gasdynamic laser

K. P. J. Reddy

Appl. Phys. Lett. 52, 1379 (1988); http://dx.doi.org/10.1063/1.99121 (2 pages)

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A new method for producing simultaneous lasing at 10.6 μm and 38.3 μm in a CO2‐N2‐CS2 gasdynamic laser is presented. The theoretical analysis predicts small‐signal gain values of the order 0.21 m−1 for 10.6 μm lasing in CO2 molecules and 0.085 m−1 for 38.3 μm lasing in CS2 molecules, indicating the possibility of dual wave lasing.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.55.Ah General laser theory
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Large aperture point‐focusing diffractor for x rays

D. B. Wittry and D. M. Golijanin

Appl. Phys. Lett. 52, 1381 (1988); http://dx.doi.org/10.1063/1.99122 (2 pages) | Cited 6 times

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A doubly bent germanium single crystal with toroidally curved crystal planes was used to obtain three‐dimensional focusing of monochromatic x rays from a microfocus source. The Johansson geometry in radial planes was obtained by cutting a cylindrically curved lamella, polishing, etching, and bending over a spherical mold of ∼50 mm radius at 740 °C. The bent crystal was aligned to obtain the Cu Kα (333) reflection in the spot which had a principal focus of ∼100 μm. Allowing for anode pitting and extraneous reflections, the observed x‐ray intensity was ∼10 times lower than expected theoretically. The discrepancy was attributed to imperfect bending and crystal defects.
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07.85.-m X- and γ-ray instruments
78.70.Ck X-ray scattering
78.20.-e Optical properties of bulk materials and thin films
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

Zn‐diffusion‐induced intermixing of InGaAs/InP multiple quantum well structures

Kiichi Nakashima, Yoshihiro Kawaguchi, Yuichi Kawamura, Yoshihiro Imamura, and Hajime Asahi

Appl. Phys. Lett. 52, 1383 (1988); http://dx.doi.org/10.1063/1.99123 (3 pages) | Cited 37 times

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The intermixing process of InGaAs/InP multiple quantum well structures by Zn diffusion at 550 °C is investigated. Secondary ion mass spectroscopy and x‐ray analysis reveal that Zn diffusion induces the intermixing of group III atoms, but has little effect on group V profiles. However, resulting group III atom profiles are not completely uniform even after Zn diffusion. These results suggest that large lattice mismatch suppresses the intermixing process by Zn diffusion.
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68.35.Fx Diffusion; interface formation
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Dislocation microstructures on flat and stepped Si surfaces: Guidance for growing high‐quality GaAs on (100) Si substrates

Y. H. Lo, M. C. Wu, H. Lee, S. Wang, and Z. Liliental‐Weber

Appl. Phys. Lett. 52, 1386 (1988); http://dx.doi.org/10.1063/1.99124 (3 pages) | Cited 16 times

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Type‐I dislocations at the GaAs/Si interface are beneficial because they effectively relax the mismatched stress, but do not propagate into the GaAs film. Accordingly, the best way to grow a low defect density GaAs film on a Si substrate is to form as many as possible type‐I dislocations or, equivalently, to suppress other kinds of defects. The high‐resolution transmission electron microscopy study shows that most of the type‐I dislocations are formed at the double step on a Si surface. It is further determined that the silicon surface steps are mainly due to the substrate tilting instead of the heating before growth. Based on our study, the (100) Si substrate with double steps along both [110] and [110] axes provides the best condition for growing low defect density GaAs on Si substrates.
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68.35.Dv Composition, segregation; defects and impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
FREE

Erratum: Low‐temperature epitaxial growth of silicon by low‐pressure chemical vapor deposition [Appl. Phys. Lett. 52, 1053 (1988)]

D. Meakin, M. Stobbs, J. Stoemenos, and N. A. Economou

Appl. Phys. Lett. 52, 1389 (1988); http://dx.doi.org/10.1063/1.99660 (3 pages) | Cited 1 time

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Low‐pressure chemical deposition of silicon by the pyrolysis of pure silane at relatively low temperatures and pressures below 100 mTorr can lead to structurally well‐defined films. Below 10 mTorr the films exhibit evidence of local epitaxial growth, which can be particularly well defined on Si(100) wafers chemically treated prior to deposition outside the deposition chamber. Even so, the interface was found to be highly strained, and high‐resolution electron microscopy observations were used to analyze the defect structures in the epitaxial layer as initiated at the interface.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
99.10.Cd Errata

Band gap and activation energy in amorphous silicon doping‐modulated superlattices

D. H. Zhang and D. Haneman

Appl. Phys. Lett. 52, 1392 (1988); http://dx.doi.org/10.1063/1.99125 (3 pages) | Cited 3 times

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It has been found that both the activation energy and optical energy gap of amorphous silicon doping‐modulated nipi... superlattices vary consistently with i layer thickness. There is a pronounced maximum at an i layer thickness of approximately 14 nm. The occurrence of this maximum, and the general variation, correspond exactly with the behavior of the persistent photoconductivity for the structures. The results are explained in terms of the development of deep trap boron‐phosphorus complexes which are rendered shallow by hydrogen accretion.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.-w Optical properties of specific thin films
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.50.Pz Photoconduction and photovoltaic effects

GaAs semiconductor‐insulator‐semiconductor field‐effect transistor with a planar‐doped barrier gate

Domingo A. Figueredo, Mark P. Zurakowski, Scott S. Elliott, William J. Anklam, and Susan R. Sloan

Appl. Phys. Lett. 52, 1395 (1988); http://dx.doi.org/10.1063/1.99126 (3 pages) | Cited 4 times

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A new GaAs field‐effect transistor structure is proposed and demonstrated. The gate electrode consists of an asymmetric planar‐doped barrier (PDB) diode which behaves like a metal‐semiconductor Schottky contact. The device allows engineering of the gate energy barrier, and optimization of transconductance and gate capacitance for a given application. The larger gate energy barrier in conjunction with the self‐aligned nature of the process holds promise for both large signal analog and digital switching applications.
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85.30.Tv Field effect devices
73.40.Ty Semiconductor-insulator-semiconductor structures

Effect of circuit oscillations on the dc current‐voltage characteristics of double barrier resonant tunneling structures

Jeff F. Young, B. M. Wood, H. C. Liu, M. Buchanan, D. Landheer, A. J. SpringThorpe, and P. Mandeville

Appl. Phys. Lett. 52, 1398 (1988); http://dx.doi.org/10.1063/1.99127 (3 pages) | Cited 33 times

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See Also: Erratum

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The influence of external circuit parameters on the measured current‐voltage behavior of double barrier resonant tunneling structures is studied both experimentally and through modeling. It is demonstrated that characteristic ‘‘plateaulike’’ structures, which often appear in the region of negative differential resistance, can be accounted for in terms of the oscillating nature of the circuit, given that only average currents and voltages are monitored.
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73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Effect of boron incorporation on the light‐induced effect in amorphous silicon solar cells

Jin Jang and Yi Sang Lee

Appl. Phys. Lett. 52, 1401 (1988); http://dx.doi.org/10.1063/1.99128 (3 pages) | Cited 1 time

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The effect of light illumination on the photovoltaic performances of hydrogenated amorphous silicon (a‐Si:H) n+‐p‐p+ solar cells has been investigated. The degradation increases as the doping concentration of p‐type a‐Si:H increases, and it decreases with increasing the substrate (or annealing) temperature. These results indicate that the light‐induced degradation increases with the microvoid density in the material. The increase of conversion efficiency has been observed for a‐Si:H n+‐p‐p+ cells after light exposure, and this is due to the increase of doping efficiency for p‐type a‐Si:H during light illumination.
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84.60.Jt Photoelectric conversion
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.50.Pz Photoconduction and photovoltaic effects
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Multiple quantum well AlGaAs/GaAs field‐effect transistor structures for power applications

Heinrich Daembkes and Günter Weimann

Appl. Phys. Lett. 52, 1404 (1988); http://dx.doi.org/10.1063/1.99129 (3 pages) | Cited 8 times

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Room‐temperature properties of modulation‐doped AlGaAs/GaAs field‐effect transistor structures with three quantum wells are investigated. For channel spacings of 31 nm and doping levels of about 1.4×1012 cm−2 per barrier layer the individual channels are continuously controllable. For a spacing of 50 nm and doping excess of 2×1012 cm−2 it is shown that the channels remain under velocity saturation but conduction sets on at markedly different gate voltages and so the channels are controlled consecutively. Because of very high current density of up to 500 mA/mm, high transconductance, low source resistance, and output conductance close to zero, the multiple quantum well field‐effect transistors are excellent candidates for power devices in the millimeter wave range.
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85.30.Tv Field effect devices
73.61.Ey III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Light‐induced degradation at the silicon/silicon dioxide interface

P. E. Gruenbaum, R. A. Sinton, and R. M. Swanson

Appl. Phys. Lett. 52, 1407 (1988); http://dx.doi.org/10.1063/1.99130 (3 pages) | Cited 16 times

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Single‐crystal silicon point‐contact solar cells show a degradation in their efficiency after being exposed to concentrated sunlight. This change has been linked to an increase in the surface recombination velocity. A similar effect is produced by carrier injection under forward bias. The annealing kinetics, the role of ultraviolet light, and possible causes for the creation of surface states are discussed.
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84.60.Jt Photoelectric conversion
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.At Surface states, band structure, electron density of states
85.30.Hi Surface barrier, boundary, and point contact devices

High‐speed GaAs p‐i‐n photodiodes grown on Si substrates by molecular beam epitaxy

J. Paslaski, H. Z. Chen, H. Morkoç, and A. Yariv

Appl. Phys. Lett. 52, 1410 (1988); http://dx.doi.org/10.1063/1.99131 (3 pages) | Cited 5 times

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We present results on high‐speed GaAs p‐i‐n photodiodes grown on Si substrates by molecular beam epitaxy. In addition to the dc operating characteristics, we also report the first impulse response and microwave frequency response measurements of GaAs‐on‐Si photodiodes. Results include an impulse response pulse width of 45 ps and a modulation corner frequency >4 GHz at a reverse bias of −3 V.
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85.60.Dw Photodiodes; phototransistors; photoresistors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Impurity‐induced layer disordering of high gap Iny(AlxGa1−x)1−yP heterostructures

D. G. Deppe, D. W. Nam, N. Holonyak, K. C. Hsieh, J. E. Baker, C. P. Kuo, R. M. Fletcher, T. D. Osentowski, and M. G. Craford

Appl. Phys. Lett. 52, 1413 (1988); http://dx.doi.org/10.1063/1.99132 (3 pages) | Cited 25 times

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Data are presented showing the impurity‐induced layer disordering (IILD), via low‐temperature (600–675 °C) Zn diffusion, of In0.5(AlxGa1−x)0.5P quantum well heterostructures and an In0.5Al0.2Ga0.3P‐GaAs heterojunction grown using metalorganic chemical vapor deposition. Secondary ion mass spectroscopy, transmission electron microscopy, and photoluminescence are used to confirm IILD, which occurs via atom intermixing on the column III site aided by column‐III‐atom interstitials. In addition, high‐temperature anneals (800–850 °C) are performed on the same crystals to confirm the thermal stability of the heterointerfaces.
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68.35.Fx Diffusion; interface formation
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Dv Composition, segregation; defects and impurities
68.35.B- Structure of clean surfaces (and surface reconstruction)

Thickness dependence of strains in strained‐layer superlattices

K. Shahzad, D. J. Olego, and D. A. Cammack

Appl. Phys. Lett. 52, 1416 (1988); http://dx.doi.org/10.1063/1.99133 (3 pages) | Cited 4 times

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We present a photoluminescence study of ZnSe‐ZnSxSe1−x strained‐layer superlattices (SLS’s) grown on 1‐μm‐thick ZnSe buffer layers using GaAs substrates. The total thickness D of SLS was varied from ∼0.1 to ∼4.6 μm to monitor the behavior of the planar biaxially compressive strains in the ZnSe well layers. We find that SLS’s can exist in a continuous range from a perfectly coherent state to a totally free‐standing state as D increases, with these planar strains in the ZnSe layers increasing from almost zero to ∼0.4%. In addition, we also observe clear strain effects produced by the SLS’s on the buffer layers.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.40.Tv Optical and dielectric properties related to treatment conditions
78.55.Et II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Symmetric self‐electro‐optic effect device: Optical set‐reset latch

A. L. Lentine, H. S. Hinton, D. A. B. Miller, J. E. Henry, J. E. Cunningham, and L. M. F. Chirovsky

Appl. Phys. Lett. 52, 1419 (1988); http://dx.doi.org/10.1063/1.99134 (3 pages) | Cited 57 times

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We demonstrate an integrated symmetric self‐electro‐optic effect device consisting of two quantum well p‐i‐n diodes electrically connected in series. The device acts as a bistable optical memory element with individual set (S) and reset (R) inputs and complementary outputs (optical S‐R latch). The switching point is determined by the ratio of the two inputs, making the device insensitive to optical power supply fluctuations when both power beams are derived from the same source. The device also shows time‐sequential gain, in that the state can be set using low‐power beams and read out with subsequent high‐power beams. The device showed bistability for voltages greater than 3 V, incident optical switching energy densities of ∼16 fJ/μm2, and was tested to a switching time of 40 ns.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
85.60.-q Optoelectronic devices
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Room‐temperature observation of resonant tunneling through an AlGaAs/GaAs quasiparabolic quantum well grown by molecular beam epitaxy

S. Y. Chou and J. S. Harris

Appl. Phys. Lett. 52, 1422 (1988); http://dx.doi.org/10.1063/1.99135 (3 pages) | Cited 14 times

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We report the first room‐temperature observation of resonant tunneling through a double‐barrier diode with a 31.5‐nm‐wide AlGaAs/GaAs quasiparabolic quantum well grown by molecular beam epitaxy. As the bias voltage is scanned from 0 to 4 V, 11 resonant tunneling transitions are observed at room temperature. At 77 K, 13 resonant tunneling transitions are observed; 10 of them show negative differential resistance, and the highest peak‐to‐valley ratio is 1.4. At 4.2 K, 17 resonant tunneling transitions are observed; 15 of them show negative differential resistance, and the peak‐to‐valley ratio of the first tunneling peak is 3.6. Computer simulation indicates that for the 17 resonant tunneling transitions, the first 13 are likely due to resonant tunneling through quasibound states in the well, and the remainder are due to resonant tunneling through virtual states.
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73.40.Gk Tunneling
85.30.Hi Surface barrier, boundary, and point contact devices
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors

Release of As from SiO2 by a temperature gradient and formation of buried n+ conductive layers in Si‐on‐SiO2 structures

G. K. Celler and L. E. Trimble

Appl. Phys. Lett. 52, 1425 (1988); http://dx.doi.org/10.1063/1.99689 (3 pages) | Cited 1 time

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We demonstrate the utility of a temperature gradient ∇T in transporting dopants, such as As, unidirectionally through SiO2 and into Si. The transport, based on thermomigration of dopant‐rich precipitates toward the heat source, turns oxide into an efficient diffusion source. It also provides the only possible method of forming buried n+ conductive layers in recrystallized, thick Si‐on‐SiO2 structures. To build such structures, arsenic is implanted into the oxide, where it remains trapped during deposition of polycrystalline Si and its recrystallization from the melt, but is subsequently released into the Si film by a directional drift in the ∇T. In the future, controlling dopant transport with two independent parameters (temperature and ∇T), instead of the temperature alone, may allow processing of three‐dimensional circuits at higher temperatures than would be otherwise possible.
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66.30.J- Diffusion of impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
85.40.Hp Lithography, masks and pattern transfer

Disordering of InGaAs‐InP quantum wells by Si implantation

B. Tell, B. C. Johnson, J. L. Zyskind, J. M. Brown, J. W. Sulhoff, K. F. Brown‐Goebeler, B. I. Miller, and U. Koren

Appl. Phys. Lett. 52, 1428 (1988); http://dx.doi.org/10.1063/1.99136 (3 pages) | Cited 26 times

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Selective disordering of In0.53Ga0.47As‐InP multiple quantum well structures by ion implantation is demonstrated for the first time. As grown, annealed, and Si implanted and annealed samples were studied by transmission electron microscopy, optical absorption, and photoluminescence. A shift of the photoluminescence and absorption edge to higher energy was observed in implanted and annealed samples with respect to annealed only samples. This shift is attributed to a combination of disordering and Burstein–Moss effect.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors
68.55.-a Thin film structure and morphology

Relationship between hole trapping and interface state generation in metal‐oxide‐silicon structures

S. J. Wang, J. M. Sung, and S. A. Lyon

Appl. Phys. Lett. 52, 1431 (1988); http://dx.doi.org/10.1063/1.99690 (3 pages) | Cited 42 times

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We have discovered a general relationship between the location of trapped holes and the subsequent generation of interface states. Experimentally, we find that a hole can become an interface state, but it must first be trapped between 20 and 70 Å from the Si/SiO2 interface (near‐interfacial hole trap) and then transfer to within 18 Å of the interface (interfacial trapped holes). Finally, the hole captures an electron and becomes an interface state. The transfer process between near‐interfacial and interfacial trapped holes does not seem to be a simple release‐capture process. Rather it appears to involve a complicated migration of the trapped hole defect towards the interface. Radiation‐hardened oxides are shown to have a similar number of near‐interfacial traps, but these traps are shallower than those in the soft oxides.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Excimer laser‐assisted metalorganic vapor phase epitaxy of CdTe on GaAs

J. J. Zinck, P. D. Brewer, J. E. Jensen, G. L. Olson, and L. W. Tutt

Appl. Phys. Lett. 52, 1434 (1988); http://dx.doi.org/10.1063/1.99137 (3 pages) | Cited 18 times

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We have successfully grown CdTe (111) on GaAs (100) at 165 °C using a 248 nm excimer laser to photodissociate dimethylcadmium and diethyltellurium in the gas phase. Good crystalline quality of the layers is confirmed by x‐ray diffractometry. Growth rates up to 2 μm/h have been recorded in real time using time‐resolved reflectivity. Auger analysis reveals that the films are stoichiometric throughout the thickness of the layer, and that carbon and oxygen contaminants are below the level of detectability. We have used laser‐induced fluorescence spectroscopy to examine the photodissociation mechanism of diethyltellurium and have observed a linear dependence of Te atom production on excimer laser power.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Nq Composition and phase identification
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Effects of deposition temperature of insulator films on the electrical characteristics of InP metal‐insulator‐semiconductor field‐effect transistors

Y. Iwase, F. Arai, and T. Sugano

Appl. Phys. Lett. 52, 1437 (1988); http://dx.doi.org/10.1063/1.99138 (2 pages) | Cited 9 times

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Techniques of vapor etching of InP substrates and in situ deposition of phosphorus nitride film were applied to fabricate accumulation‐mode InP metal‐insulator‐semiconductor field‐effect transistors, where the temperature of vapor etching and deposition ranged from 250 to 500 °C. It has been found that the effective mobility of electrons in the surface layer of InP substrates decreases with the increase of the deposition temperature, and 450 °C as the substrate temperature during the etching and deposition was found to result in the smallest drain current drift, which was less than 2% of the initial value of drift.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.-b Surface treatments
73.61.Ey III-V semiconductors

Indium phosphide solar cells made by ion implantation

C. J. Keavney and M. B. Spitzer

Appl. Phys. Lett. 52, 1439 (1988); http://dx.doi.org/10.1063/1.99095 (2 pages) | Cited 13 times

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High‐efficiency indium phosphide solar cells of the shallow homojunction type have been made using ion implantation to form the emitter layer. An anneal in phosphine was used to recover the implant damage. The cells show a 5% higher short‐circuit current than cells with a similar base but with an epitaxial emitter. The open‐circuit voltage is slightly higher than that of the epitaxial cells, and the fill factor slightly lower. Conversion efficiency of 18.8% (air mass zero, total area) has been achieved; this is the highest thus far reported for an InP cell.
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84.60.Jt Photoelectric conversion
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Ey III-V semiconductors
73.50.Pz Photoconduction and photovoltaic effects
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