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2 May 1988

Volume 52, Issue 18, pp. 1455-1543

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Role of added fluorine to enhance the electromagnetic properties of superconducting Y‐Ba‐Cu‐O compounds

Y. Hakuraku, F. Sumiyoshi, and T. Ogushi

Appl. Phys. Lett. 52, 1528 (1988); http://dx.doi.org/10.1063/1.99697 (3 pages) | Cited 11 times

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An experimental study was carried out on the role of a small quantity of fluorine which leads to an increment of the critical current density at 77 K of an Y‐Ba‐Cu‐O compound. Such a small quantity of fluorine did not change its crystal structure according to x‐ray diffraction analysis. From the comparison of the magnetization curves of both a bulk and a powder sample, we recognized that the added fluorine plays the role of strengthening superconductive connections among the grains. To clarify the growth mechanism of those grains, we also observed the feature of the grown grains in the fluorine‐diffused sample which had an interface between Y1Ba2Cu3Oy and Y1Ba2Cu3F4Oy compounds before sintering.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.70.-b Superconducting materials other than cuprates
61.72.Mm Grain and twin boundaries

Rapid thermal anneal of sprayed Y1Ba2Cu3O7−x slurry

N. W. Cody, U. Sudarsan, and R. Solanki

Appl. Phys. Lett. 52, 1531 (1988); http://dx.doi.org/10.1063/1.99699 (3 pages) | Cited 12 times

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Thick (∼ 20 μm) superconducting films of Y1 Ba2 Cu3 O7−x have been produced on 3 in. wafers of silicon, SiO2 ‐coated silicon, and sapphire. The process involves spraying of a slurry of finely ground powder of Y1 Ba2 Cu3 O7−x and methyl alcohol, followed by rapid thermal anneal for sintering. The Tc for Si, SiO2 , and sapphire are 70, 81, and 62 K, respectively. Post‐sinter anneal in oxygen at 400 °C further increases Tc . The adhesion of the films sintered above 980 °C is excellent.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Rs Electrical and magnetic properties related to treatment conditions

Hysteretic levitation forces in superconducting ceramics

F. C. Moon, M. M. Yanoviak, and R. Ware

Appl. Phys. Lett. 52, 1534 (1988); http://dx.doi.org/10.1063/1.99700 (3 pages) | Cited 93 times

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Magnetization forces between small permanent magnets and bulk high Tc superconducting ceramic materials have been measured and show marked hysteretic behavior as a function of the distance between the magnet and superconductor. Magnetic forces of up to 2500 dyn, both normal and tangential to the superconductor surface, have been made. Near‐reversible forces are obtained for small motions of the magnet, however, which are believed to be related to flux pinning.
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74.25.Ha Magnetic properties including vortex structures and related phenomena
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.70.-b Superconducting materials other than cuprates
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Thermomagnetic direct overwrite in TbFe using thermally induced domain wall energy gradient

D. Rugar, J. C. Suits, and C.‐J. Lin

Appl. Phys. Lett. 52, 1537 (1988); http://dx.doi.org/10.1063/1.99075 (3 pages) | Cited 13 times

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A method is described for thermomagnetic direct overwrite in amorphous Tb23 Fe77 . Using long (500 ns) laser pulses, micron‐size domains can be written with diameters significantly smaller than the diameter of the Curie temperature isotherm. The relatively small domain size is due to the collapsing effect of the thermally generated domain wall energy gradient. Without switching the magnetic bias field, the domains can be collapsed to submicron size using short (50 ns) laser pulses. Domains can be completely erased by firing short pulses in succession as the recording medium is moved slowly with respect to the optical beam.
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72.15.Jf Thermoelectric and thermomagnetic effects
85.70.Sq Magnetooptical devices
42.79.Vb Optical storage systems, optical disks
75.50.Kj Amorphous and quasicrystalline magnetic materials

Applications of polymer electrets for pollution studies

P. K. C. Pillai and Paramdeep Khurana

Appl. Phys. Lett. 52, 1540 (1988); http://dx.doi.org/10.1063/1.99076 (2 pages)

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The analysis and identification of the pollutants sticking onto the surfaces of electrets prepared from polymethylmethacrylate and polytetrafluoroethylene have been done by scanning electron microscopic, mass spectrometric, and near infrared spectrophotometric techniques. Electret samples exposed to atmospheres containing carbon tetrachloride, xylene, and acetone at their saturation vapor densities, individually, and in mixed atmospheric conditions of carbon tetrachloride and acetone have shown characteristic spectra of these pollutants. Scanning electron microscopic studies of the exposed electret samples have also shown corresponding structural changes. These studies have clearly indicated that electrets are efficient devices for collecting, detecting, and even controlling various types of pollutants.
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92.60.Sz Air quality and air pollution
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis

Phthalocyanine photoelectrochemical cell prepared by a micelle disruption method

Yutaka Harima, Kazuo Yamashita, and Tetsuo Saji

Appl. Phys. Lett. 52, 1542 (1988); http://dx.doi.org/10.1063/1.99077 (2 pages) | Cited 5 times

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Photoelectrochemical characteristics of a metal‐free phthalocyanine electrode prepared by a micelle disruption method are described. The novel technique is found to provide more photoactive phthalocyanine layers on indium tin oxide (ITO), compared with a vacuum sublimation technique. A short‐circuit photocurrent of 0.1 mA cm−2 is obtained for the ITO/H2 Pc(MD)/I−3 ‐I−/Pt cell under the white light illumination of 6 mW cm−2, together with an open‐circuit photovoltage of 70 mV and a fill factor of 0.42. These data lead to a value of 0.06% for the energy conversion efficiency.
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82.47.-a Applied electrochemistry
84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
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