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9 May 1988

Volume 52, Issue 19, pp. 1551-1645

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Enhanced infrared attenuated‐total‐reflection spectra of p‐nitrobenzoic acid with Ag films

S. Badilescu, P. V. Ashrit, and Vo‐Van Truong

Appl. Phys. Lett. 52, 1551 (1988); http://dx.doi.org/10.1063/1.99078 (3 pages) | Cited 9 times

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Enhanced infrared attenuated‐total‐reflection spectra of p‐nitrobenzoate with overcoated and undercoated thin Ag films have been observed. The role of Ag‐sample chemical interactions in the enhancement mechanism is considered.
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78.66.Qn Polymers; organic compounds
78.66.Bz Metals and metallic alloys
78.30.-j Infrared and Raman spectra

Surface plasmon interferometry in the visible

Benno Rothenhäusler and Wolfgang Knoll

Appl. Phys. Lett. 52, 1554 (1988); http://dx.doi.org/10.1063/1.99698 (3 pages) | Cited 16 times

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Plasmon surface polaritons that are launched at an index step from a Ag/dielectric coating/air to a Ag/air interface interfere with the evanescent waves of the driving photon field. The resulting intensity distribution on the Ag surface can be imaged by the recently developed surface plasmon microscopy. We show that it is thus possible to derive the real part as well as the imaginary part of the complex surface plasmon wave vector.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Qn Polymers; organic compounds

Increased XeF(B→X) laser efficiency at high pump rate and elevated temperature

L. Litzenberger and A. Mandl

Appl. Phys. Lett. 52, 1557 (1988); http://dx.doi.org/10.1063/1.99079 (3 pages) | Cited 3 times

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A XeF(B→X) laser efficiency of 6.0% has been observed in an electron beam pumped device. This is the highest XeF(B→X) laser efficiency reported to date. Mixtures of NF3 , Xe, and Ne at 425 K and a density of 3 amagat were pumped at a rate of 280 kW/cm3 with a 550 ns pulse. This deposited 150 J/l into the laser gas. Subsequent experiments at 190 J/l input (and 460 K) yielded specific laser outputs as high as 11 J/l.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.-f Lasers

Narrowing the far field of a Y‐junction laser array using a customized spatial filter in an external cavity

Josef Berger, David F. Welch, William Streifer, and Donald R. Scifres

Appl. Phys. Lett. 52, 1560 (1988); http://dx.doi.org/10.1063/1.99080 (3 pages) | Cited 4 times

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A study of the spatially resolved spectrum of individual emitters in a Y‐junction laser array shows that the array is not completely locked. The use of an external cavity with a novel, customized spatial filter is demonstrated to yield a stable output beam, which increases from 1.25 times the diffraction limit at low power to 1.6 times the diffraction limit at 120 mW without shifting.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Optoelectronic bistability in gallium phosphide

Mun S. Choi, J. H. Hur, and Martin A. Gundersen

Appl. Phys. Lett. 52, 1563 (1988); http://dx.doi.org/10.1063/1.99081 (3 pages) | Cited 1 time

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An optoelectronic bistability in GaP is reported. The bistable mechanism which is based on trap filling is discussed, and possible applications are described. This simple bistable device can be realized using a commercial light‐emitting diode.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.20.-e Optical properties of bulk materials and thin films
85.60.-q Optoelectronic devices
85.60.Jb Light-emitting devices

Real time processing of picosecond and femtosecond laser pulses: Application to free‐electron lasers

Antonello Cutolo, Stephen V. Benson, and John M. Madey

Appl. Phys. Lett. 52, 1566 (1988); http://dx.doi.org/10.1063/1.99082 (3 pages) | Cited 8 times

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An original and reliable technique, based on a three‐wave interaction, has been designed and successfully tested to analyze the evolution of the modes and the pulse length of a free‐electron laser during the buildup of the radiation. The technique was developed in order to study the effects of the optical guiding in the free‐electron laser built at Stanford and driven by the MARK III linear accelerator. We explicitly mention that this technique can be easily exploited to monitor, in real time, the pulse‐to‐pulse fluctuations of the mode size and the pulse length of the pulses delivered by any laser independently of its pulse length from femtosecond to millisecond.
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41.60.Cr Free-electron lasers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Visible free‐electron‐laser oscillator (constant and tapered wiggler)

J. A. Edighoffer, G. R. Neil, S. Fornaca, H. R. Thompson, T. I. Smith, H. A. Schwettman, C. E. Hess, J. Frisch, and R. Rohatgi

Appl. Phys. Lett. 52, 1569 (1988); http://dx.doi.org/10.1063/1.99083 (2 pages) | Cited 3 times

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The first linac‐based visible free‐electron‐laser oscillator was operated in February 1987 at a wavelength of 525 nm with and without a wiggler taper. Peak output power of 29 kW with a macropulse average power of 1.1 W was observed. The cavity dielectric mirrors were damaged at approximately 21 kW/cm2 of average intracavity power.
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41.60.Cr Free-electron lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

Ultrasonic excitation and detection of capillary waves for the measurement of surface film properties

B. T. Khuri‐Yakub, P. A. Reinholdtsen, C‐H. Chou, J. F. Vesecky, and C. C. Teague

Appl. Phys. Lett. 52, 1571 (1988); http://dx.doi.org/10.1063/1.99084 (2 pages) | Cited 3 times

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A 10 MHz focused ultrasonic transducer is used to excite capillary waves by placing its focus at the air‐water interface and using a tone burst to excite the ultrasonic wave. The radiation pressure associated with the upward propagating ultrasonic pulse lifts the surface of the water which then relaxes by exciting a radially propagating capillary wave. An amplitude and phase measuring acoustic microscope operating at 10 MHz is used to detect the amplitude and slope of the capillary wave as it propagates over the focused transducer of the acoustic microscope. This arrangement allows us to make a noncontacting measurement of surface tension and surface viscosity which will be used for characterizing surface films, such as the marine microlayer.
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68.03.Kn Dynamics (capillary waves)
68.05.-n Liquid-liquid interfaces
68.15.+e Liquid thin films
68.03.Cd Surface tension and related phenomena
43.35.Zc Use of ultrasonics in nondestructive testing, industrial processes, and industrial products

Self‐aligned diffusion barrier by nitridation of TiSi2

Marc Wittmer

Appl. Phys. Lett. 52, 1573 (1988); http://dx.doi.org/10.1063/1.99701 (3 pages) | Cited 8 times

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Nitridation of TiSi2 has been shown to provide a self‐aligned diffusion barrier layer on top of the silicide. A detailed analysis of the nitridation mechanism shows that the compound formed is TiN as commonly expected. The reaction TiSi2→TiN starts at the surface and progresses through the silicide film with a laterally uniform interface. The Si atoms that are dissociated from the TiSi2 grow epitaxially onto the Si substrate material. Implications for contact applications are mentioned.
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68.35.Fx Diffusion; interface formation
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
85.40.Ls Metallization, contacts, interconnects; device isolation

Composition dependence of viscosity for molten Ga1−xAsx (0.0≤x≤0.53)

Koichi Kakimoto and Taketoshi Hibiya

Appl. Phys. Lett. 52, 1576 (1988); http://dx.doi.org/10.1063/1.99085 (2 pages) | Cited 4 times

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Viscosity of molten Ga1−xAsx was directly measured by an oscillating cup method. The composition dependence of the synergism viscosity remarkably increases in the vicinity of stoichiometric composition; strong temperature dependence of viscosity was also observed at that composition. Activation energy for viscous flow at the stoichiometric Ga1−xAsx (x=0.5) melt ranges from 250 to 600 meV, which was larger than those of metals such as gallium and indium whose activation energies were about 60–100 meV. We estimate, therefore, that the melt of stoichiometric composition has middle‐range ordering like an aggregation whose range is larger than that of short‐range ordering in metals such as gallium and indium.
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66.20.-d Viscosity of liquids; diffusive momentum transport
61.50.Nw Crystal stoichiometry

Quantum interference effects in GaAs/GaAlAs bulk potential barriers

J. R. Hayes, P. England, and J. P. Harbison

Appl. Phys. Lett. 52, 1578 (1988); http://dx.doi.org/10.1063/1.99086 (3 pages) | Cited 18 times

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We have observed a large number of oscillations (10) in the current/voltage characteristic of GaAs/GaAlAs triangular potential barriers due to quantum interference effects. When an exact number of periods of a standing wave is present in the barrier there is a minimum in the transmission coefficient for electrons. As the bias is changed the electron wavelength is changed and there will once again be a minimum when the next complete period of the standing wave is incorporated. The observation of this quantum interference effect enables us to conclude that the scattering rate for hot electrons, high in the energy band of GaAs, is much less than previously assumed.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Demonstration of an InAsSb strained‐layer superlattice photodiode

S. R. Kurtz, L. R. Dawson, T. E. Zipperian, and S. R. Lee

Appl. Phys. Lett. 52, 1581 (1988); http://dx.doi.org/10.1063/1.99087 (3 pages) | Cited 25 times

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A photodiode consisting of a p‐n junction embedded in an InAs0.09Sb0.91/InSb strained‐layer superlattice with equal 130‐Å‐thick layers was grown using molecular beam epitaxy. This nonoptimized device exhibited photoresponse out to a wavelength of 8.7 μm at 77 K. The resistance and the minority‐carrier diffusion length of the photodiode result in a detectivity (3×109 cm Hz1/2/W) at 7 μm that is within one order of magnitude of the detectivity of the best HgCdTe detectors at that wavelength.
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85.60.Dw Photodiodes; phototransistors; photoresistors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
73.50.Pz Photoconduction and photovoltaic effects

Electron beam electroreflectance studies of GaAs and CdTe surfaces

P. M. Raccah, J. W. Garland, S. E. Buttrill, L. Francke, and J. Jackson

Appl. Phys. Lett. 52, 1584 (1988); http://dx.doi.org/10.1063/1.99088 (3 pages) | Cited 16 times

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An electron beam electroreflectance (EBER) system has been built and used to investigate GaAs and CdTe sample surfaces. EBER permits one to go to low temperatures, to couple electroreflectance with high‐vacuum techniques and to study the effects of different surface treatments. Analysis shows that the EBER technique leads to only negligible thermal modulation of the sample for low‐energy electron beams such as that used here. The results of our measurements before and after sputtering with 2 keV O+2 ions clearly show that the measurements are very sensitive to the condition of sample surfaces. Analysis of the results shows the existence of distinct surface and bulk signals and gives detailed information about the surface before and after sputtering. Comparison of our EBER results with room‐temperature electrolyte‐electroreflectance results on both GaAs and CdTe confirms the analysis and establishes that electroreflectance is a surface‐sensitive technique.
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79.20.Kz Other electron-impact emission phenomena
78.20.Jq Electro-optical effects
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Microstructure and the light‐induced metastability in hydrogenated amorphous silicon

Enakshi Bhattacharya and A. H. Mahan

Appl. Phys. Lett. 52, 1587 (1988); http://dx.doi.org/10.1063/1.99089 (3 pages) | Cited 67 times

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Using a parameter obtained from infrared measurements of the silicon‐hydrogen stretch mode, the amout of light‐induced degradation in hydrogenated amorphous silicon (a‐Si:H) has been explored as a function of the amount of microstructure present in our samples. We find that samples with more microstructure, and also more bonded hydrogen, show an increased light‐induced effect. At the same time, the volume density of states in the initial (annealed) state remains virtually unchanged. We discuss how the present results relate to existing models proposed to describe the light‐induced effect.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.20.At Surface states, band structure, electron density of states
78.66.Jg Amorphous semiconductors; glasses
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Exciton binding energies in GaInAs/InP quantum wells determined by thermally modulated photoluminescence

Z. H. Lin, T. Y. Wang, G. B. Stringfellow, and P. C. Taylor

Appl. Phys. Lett. 52, 1590 (1988); http://dx.doi.org/10.1063/1.99090 (3 pages) | Cited 15 times

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Atmospheric pressure organometallic vapor phase epitaxy has been used for the growth of single InP/GaInAs/InP quantum wells with atomically abrupt interfaces. This has allowed wells as thin as 10 Å to be grown which give sharp photoluminescence (PL) spectra at 10 K. PL and thermally modulated PL have been used to distinguish band‐to‐band and exciton luminescence transitions allowing an estimation of the exciton binding energy. For the first time, the qualitative trend of an increase in exciton binding energy with decreasing well width for thick wells followed by a distinct maximum and a sharp decrease in binding energy with decreasing well width for very thin wells has been observed. The maximum binding energy of approximately 17 meV is found to occur for a nominal well width of approximately 13 Å.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Refractive indices of semiconductor films measured by waveguide cutoff spectroscopy

S. Morasca, B. Sordo, C. De Bernardi, and M. Meliga

Appl. Phys. Lett. 52, 1593 (1988); http://dx.doi.org/10.1063/1.99091 (3 pages) | Cited 3 times

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It is shown that by measuring the cutoff wavelengths of supported modes in waveguides it is possible to determine accurately the refractive index of the guiding layer. This method has been applied to InGaAsP/InP waveguides, and their refractive indices are obtained with accuracy to the third decimal place.
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42.79.Gn Optical waveguides and couplers
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.82.-m Integrated optics

Reduced carbon acceptor incorporation in GaAs grown by molecular beam epitaxy using dimer arsenic

J. C. Garcia, A. C. Beye, J. P. Contour, G. Neu, J. Massies, and A. Barski

Appl. Phys. Lett. 52, 1596 (1988); http://dx.doi.org/10.1063/1.99092 (3 pages) | Cited 14 times

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Doubly doped (C,Be) GaAs layers grown by molecular beam epitaxy under dimer or tetramer arsenic flux are studied by selectively excited photoluminescence. Acceptor spectroscopy gives the first experimental evidence of the decrease of carbon shallow acceptor concentration when using dimer rather than tetramer arsenic.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.55.Cr III-V semiconductors

Tight‐binding study of the strained monolayer superlattices (Si)1/(Si1−xGex)1 (100)

Dingli Shen, Fen Lu, Kaiming Zhang, and Xide Xie

Appl. Phys. Lett. 52, 1599 (1988); http://dx.doi.org/10.1063/1.99093 (3 pages) | Cited 3 times

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Electronic structures of strained monolayer superlattices (Si)1/(Si1−xGex)1 are calculated within the tight‐binding scheme by taking into consideration the effect of stress on atomic interactions. Gap variations with composition and band offsets for different strain conditions are obtained. When Si(Ge) is grown on cubic Ge(Si) with stress to match the lattice constant of the substrates, the calculated nonmonotonic behavior of the superlattice Eg(x) curve can be attributed to a similar phenomenon of the bulk alloy under the same strain. The energy band of the monolayer Si/Ge shows the zinc blende symmetry with a Si‐like feature. Starting with the virtual crystal approximation for the calculation of gap and density of states, it is found that further modification using coherent potential approximation is not very significant.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Germanium blocked‐impurity‐band far‐infrared detectors

Dan M. Watson and James E. Huffman

Appl. Phys. Lett. 52, 1602 (1988); http://dx.doi.org/10.1063/1.99094 (3 pages) | Cited 19 times

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Ge:Ga blocked‐impurity‐band detectors having long‐wavelength thresholds of 190 μm and peak quantum efficiencies of 4% have been fabricated. This performance approaches that of state‐of‐the‐art discrete Ge:Ga photoconductors, with the additional benefit of good response at wavelengths longer than that obtained with unstressed photoconductors.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

In situ observations of misfit dislocation propagation in GexSi1−x/Si(100) heterostructures

R. Hull, J. C. Bean, D. J. Werder, and R. E. Leibenguth

Appl. Phys. Lett. 52, 1605 (1988); http://dx.doi.org/10.1063/1.99055 (3 pages) | Cited 51 times

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We describe in situ electron microscrope observations of the motion of misfit dislocations in Ge0.3Si0.7/Si(100) heterostructures. A 350 Å Ge0.3Si0.7/Si(100) structure is grown by molecular beam epitaxy at 550 °C. Although this is below the critical thickness for this composition and growth temperature, we observe misfit dislocation nucleation and propagation as a function of in situ annealing temperature in the electron microscope. This confirms the metastable nature of GeSi strained‐layer growth. The misfit dislocation density increases continuously with temperature, passing through an accelerated transition at ∼850 °C. We also report preliminary measurements of misfit dislocation velocity, which establish the identical relationship between threading and misfit dislocations in this system.
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68.35.Dv Composition, segregation; defects and impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Bipolar tunneling field‐effect transistor: A three‐terminal negative differential resistance device for high‐speed applications

J. P. Leburton, J. Kolodzey, and S. Briggs

Appl. Phys. Lett. 52, 1608 (1988); http://dx.doi.org/10.1063/1.99056 (3 pages) | Cited 5 times

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Carrier injection across a tunnel homojunction is suggested as a new mechanism for a high‐speed three‐terminal device. The novel feature is the two‐dimensional homojunction tunneling within a bipolar modulation doping structure. Negative differential resistance characterized by large peak‐to‐valley current ratios and high transconductance is anticipated. Estimates of the relevant time constants of the tunnel structure suggest the possibility of very high frequency operation.
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85.30.Tv Field effect devices
85.30.Pq Bipolar transistors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling

Control of epitaxial orientation of Si on CoSi2(111)

R. T. Tung and J. L. Batstone

Appl. Phys. Lett. 52, 1611 (1988); http://dx.doi.org/10.1063/1.99702 (3 pages) | Cited 30 times

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Template techniques for Si epitaxy are designed based on the two structures, CoSi2‐C and CoSi2‐S, of the CoSi2 surface. The different stacking sequences of the two CoSi2 surfaces have led to the growth of single‐crystal epitaxial Si layers with either type A or type B orientation on CoSi2(111). The crystalline quality of these Si/CoSi2/Si structures far exceeds that of those reported previously. The orientation of the epitaxial Si overlayer is also found to depend on the strain in the epitaxial CoSi2 thin films.
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68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.60.Bs Mechanical and acoustical properties

Anomalous behavior of reverse leakage currents in liquid phase epitaxial HgCdTe photodiodes with 10 MeV electron irradiations

R. S. Stapp, D. G. Feller, L. R. Johnson, C. I. Westmark, J. Bajaj, K. Vural, P. R. Newman, and E. R. Blazejewski

Appl. Phys. Lett. 52, 1614 (1988); http://dx.doi.org/10.1063/1.99057 (3 pages) | Cited 1 time

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We have observed an anomalous behavior of reverse‐bias leakage current in Hg1−xCdxTe n+‐on‐p photodiodes at 77 K as a function of total 10 MeV electron dose. For ZnS/SiO2 passivated planar configurations of photodiodes with 0.25<x<0.5, the leakage current increases superlinearly with increasing total dose greater than 10 krad, saturates at doses between 100 and 200 krad, followed by a dramatic recovery that is sometimes complete to near‐preradiation values. For x≂0.2, very little or no recovery is observed. The effects of 60CO gamma irradiation are nearly identical.
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85.60.Dw Photodiodes; phototransistors; photoresistors
61.80.Fe Electron and positron radiation effects

GaAs heteroepitaxial growth on Si for solar cells

Yoshio Itoh, Takashi Nishioka, Akio Yamamoto, and Masafumi Yamaguchi

Appl. Phys. Lett. 52, 1617 (1988); http://dx.doi.org/10.1063/1.99058 (2 pages) | Cited 21 times

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Thermal annealing effects on the reduction of dislocation density in GaAs on Si substrates were investigated. The dislocation density in GaAs films grown on Si substrates by metalorganic chamical vapor deposition was reduced by in situ thermal annealing to 2×106/cm2. We have found that the cooling and heating cycle of the GaAs film is most important factor in reducing the dislocation density in thermal annealing. Solar cells fabricated using GaAs films with 5×106/cm2 etch pit density have 18% conversion efficiency for the active area under AM1.5 simulated illumination.
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84.60.Jt Photoelectric conversion
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Phase locking of Josephson junction arrays

P. Hadley, M. R. Beasley, and K. Wiesenfeld

Appl. Phys. Lett. 52, 1619 (1988); http://dx.doi.org/10.1063/1.99059 (3 pages) | Cited 32 times

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We report the results of a stability analysis of coherent oscillations in series arrays of Josephson junctions with a matched resistive load. We find that arbitrarily large, dc biased arrays of Josephson junctions will phase lock most strongly when the capacitance parameter βc ≊1, and the bias current is about twice the critical current of the individual junctions.
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85.25.Cp Josephson devices
74.50.+r Tunneling phenomena; Josephson effects
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