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4 Jan 1988

Volume 52, Issue 1, pp. 1-83

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Control of TM waves by strong TE nonlinear guided waves

T. P. Shen, G. I. Stegeman, and A. A. Maradudin

Appl. Phys. Lett. 52, 1 (1988); http://dx.doi.org/10.1063/1.99326 (3 pages) | Cited 8 times

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We show that a TM‐polarized wave can propagate along the interface between a linear and a nonlinear dielectric medium, provided that a high‐power TE‐polarized wave is also present. On the basis of the threshold powers for the two waves, we predict that 100% modulation of the TM wave by the strong beam is possible.
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42.25.Dd Wave propagation in random media
42.79.Hp Optical processors, correlators, and modulators
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.82.-m Integrated optics

Nonlinear microwave susceptibility measurement of an artificial Kerr medium

Bradley Bobbs, Robert Shih, Harold R. Fetterman, and W. W. Ho

Appl. Phys. Lett. 52, 4 (1988); http://dx.doi.org/10.1063/1.99314 (3 pages) | Cited 21 times

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A suspension of short graphite fibers was shown to provide an effective medium for nonlinear microwave interactions. Using a 18‐GHz pump beam with up to 20 W continuous power, changes in the 94‐GHz refractive index were measured by interferometry. The induced birefringence and anisotropic absorption indicate an alignment of the fibers with the electric field of the pump beam. The resulting nonlinear refractive index coefficient of n2=2.6×10−4 cm2/W is of sufficient magnitude to demonstrate microwave bistability.
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78.20.Fm Birefringence
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.65.-k Nonlinear optics

Resonant, dispersive optical tuning in an epitaxial (Al,Ga)As Fabry–Perot étalon

P. L. Gourley and T. J. Drummond

Appl. Phys. Lett. 52, 7 (1988); http://dx.doi.org/10.1063/1.99331 (3 pages) | Cited 6 times

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We report optical tuning (an optically induced shift of the transmittance peak) of an epitaxial Fabry–Perot étalon comprising AlAs/AlGaAs quarter‐wave high reflectors surrounding a GaAs/AlGaAs multiple quantum well spacer layer. The reflectors and spacer were produced in a single growth process by using molecular beam epitaxy. Low‐power cw reflection and trasmittance spectra as well as higher power pulsed trasmittance spectra were measured at room temperature. A very sharp (∼20 Å full width at half‐maximum) Fabry–Perot transmittance peak was observed near the resonant exciton wavelength (8500 Å) at room temperature. The tuning of this transmittance mode under pulsed optical excitation is as large as 27 Å. These results indicate that very large on/off switching ratios (∼10:1) can be achieved with these structures.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.79.Ci Filters, zone plates, and polarizers
42.79.Hp Optical processors, correlators, and modulators

Correlated spontaneous emission between two longitudinal modes in an extended‐cavity semiconductor laser

M. Ohtsu and K.‐Y. Liou

Appl. Phys. Lett. 52, 10 (1988); http://dx.doi.org/10.1063/1.99322 (3 pages) | Cited 13 times

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Recently, correlated spontaneous emission in a laser of three‐level atoms has been analyzed theoretically and has been demonstrated experimentally using a three‐level He‐Ne Zeeman laser. We demonstrate that correlated spontaneous emission is also feasible in a semiconductor laser with a long extended cavity. As a result, the heterodyned spectral width between two lasing modes in a grating extended‐cavity laser was reduced to below the spontaneous emission noise level. The laser can be used for high‐precision optical‐heterodyne sensing.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

A 35 ps, Q‐switched, continuous‐pumped neodymium:yttrium aluminum garnet laser using an electro‐optic ring modulator

R. Marchetti, E. Penco, G. Giuliani, and E. Palange

Appl. Phys. Lett. 52, 13 (1988); http://dx.doi.org/10.1063/1.99323 (3 pages) | Cited 4 times

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An electro‐optical ring modulator, used as a cavity output coupler, has permitted simultaneous active mode locking, Q switching, and cavity dumping of a continuous‐pumped neodymium:yttrium aluminum garnet laser. We have obtained output pulses of 4 MW peak power and 35 ps duration at repetition rates up to 2.5 kHz.
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42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Rz Doped-insulator lasers and other solid state lasers
42.79.Hp Optical processors, correlators, and modulators

Photochemical hole burning of tetraphenylporphine derivatives

N. Kishii, N. Asai, K. Kawasumi, S. Tamura, and J. Seto

Appl. Phys. Lett. 52, 16 (1988); http://dx.doi.org/10.1063/1.99324 (2 pages) | Cited 5 times

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The substituent effect on photochemical hole burning (PHB) for tetraphenylporphine was studied and the PHB efficiency was related to the electron donating and/or withdrawing properties of the substituents of the phenyl ring. The Hammett‐sigma constants of the substituents were related to the efficiency of the photochemical hole burning reaction. Compounds with a low Hammett‐sigma constant such as tetra‐(4‐methoxyphenyl)porphine had a higher PHB reaction efficiency than derivatives with a higher value such as tetraphenylporphine. We have also demonstrated multiple photochemical hole burning using this high efficiency compound tetra‐(4‐methoxyphenyl)porphine as a guest material.
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42.79.Vb Optical storage systems, optical disks
82.50.-m Photochemistry
42.30.-d Imaging and optical processing

Heterojunction acoustic charge transport devices on GaAs

William J. Tanski, Sears W. Merritt, Robert N. Sacks, Donald E. Cullen, Emilio J. Branciforte, Roger D. Carroll, and Timothy C. Eschrich

Appl. Phys. Lett. 52, 18 (1988); http://dx.doi.org/10.1063/1.99325 (3 pages) | Cited 29 times

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We have demonstrated a new type of buried‐channel acoustic charge transport device in which charge is transported in an (Al,Ga)As/GaAs/(Al,Ga)As heterojunction channel. Traveling‐wave potential wells, associated with a surface acoustic wave (SAW) propagating on the 〈100〉 surface of a GaAs crystal, transport electrons at the SAW velocity by means of a large‐signal acoustoelectric interaction. Heterojunction acoustic charge transport (HACT) delay lines have been fabricated, and the transport of charge demonstrated. Charge packets with up to 16×106 electrons/cm were measured in a delay 1.4 μs long. The HACT device is much simpler, the transport channel is more reliably produced (by molecular beam epitaxy or metalorganic chemical vapor deposition), and the device has potential for higher dynamic range when compared to the previously developed acoustic charge transport technology. This new device type is useful for the implementation of high‐speed monolithic signal processors.
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43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators
43.35.Pt Surface waves in solids and liquids
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
43.60.-c Acoustic signal processing

Self‐consistent simulation of a parallel‐plate rf discharge

R. W. Boswell and I. J. Morey

Appl. Phys. Lett. 52, 21 (1988); http://dx.doi.org/10.1063/1.99327 (3 pages) | Cited 62 times

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A particle‐in‐cell code with nonperiodic boundary conditions is used to stimulate a rf discharge. The simulations are started with a few ion‐electron pairs which can initiate a breakdown after a few rf cycles with the plasma density increasing until a steady state is reached. The average potential of the plasma is greater than that on the boundaries so that ions drift towards the sheaths at the ambipolar rate. The ion loss at equilibrium is balanced mainly by ion creation due to jets of secondary electrons accelerated through the sheaths formed alternately on each electrode. The variation of the sheath width, the negative glow, and the average sheath potential are studied as a function of pressure and compared with Child–Langmuir theory.
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52.80.Pi High-frequency and RF discharges
52.65.-y Plasma simulation
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)

Amorphous chalcogenide thin‐film Schottky barrier (Bi/As2Se3:Bi) solar cell

Sunil Kumar, B. R. Mehta, Subhash C. Kashyap, and K. L. Chopra

Appl. Phys. Lett. 52, 24 (1988); http://dx.doi.org/10.1063/1.99305 (3 pages) | Cited 6 times

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A thin‐film metal‐amorphous chalcogenide semiconductor Schottky barrier solar cell between Bi and n‐type As2Se3:Bi has been fabricated by low‐temperature diffusion of vacuum evaporated bismuth into a p‐type a‐As2Se3 film. The dominant current transport mechanism in the junction is established to be tunneling via recombination states. Typical open circuit voltage and short circuit current density of the solar cell are 300 mV and 140 μA/cm2, respectively.
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84.60.Jt Photoelectric conversion
73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Gk Tunneling

GaAs growth by atomic layer epitaxy using diethylgalliumchloride

Kazuo Mori, Masaji Yoshida, Akira Usui, and Hiroshi Terao

Appl. Phys. Lett. 52, 27 (1988); http://dx.doi.org/10.1063/1.99306 (3 pages) | Cited 24 times

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GaAs is grown by metalorganic atomic layer epitaxy (MOALE) using diethylgalliumchloride (DEGaCl) as a new MO source material for ALE and AsH3 in a horizontal, low‐pressure metalorganic chemical vapor deposition system. Monolayer‐unit growth has been obtained over a wide range of growth conditions, including growth temperature and the time of substrate exposure to DEGaCl. This ALE process is called ‘‘digital epitaxy,’’ and its advantages may be seen in its successful application here to extremely uniform GaAs growth on a 3‐in. GaAs wafer. The digital nature of GaAs growth is well explained here using a Langmuir monolayer adsorption model for GaCl, a stable decomposition product of DEGaCl. Growth at higher temperatures leads to a reduction of carbon contamination; and at 600 °C, n‐type layers with a 77 K mobility of 22 400 cm2/V s are obtained.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.50.Dn Low-field transport and mobility; piezoresistance
68.55.-a Thin film structure and morphology

Experimental study on the correlation between thermal‐wave signals and dopant profiles for silicon‐implanted GaAs

Naotaka Uchitomi, Hitoshi Mikami, Nobuyuki Toyoda, and Riro Nii

Appl. Phys. Lett. 52, 30 (1988); http://dx.doi.org/10.1063/1.99307 (3 pages) | Cited 5 times

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The correlation between the contour maps of thermal‐wave signals and those of carrier concentrations in GaAs substrates was investigated to understand which portion of an implanted profile mainly corresponds to the generation of thermal‐wave signals. It was found that the thermal‐wave signals on a Si‐implanted GaAs wafer showed good correlation with the peak concentration in the carrier profile obtained from capacitance‐voltage (C‐V) measurements. This method is useful for the threshold voltage monitoring of GaAs metal‐semiconductor field‐effect transistors with a thin implanted channel layer, which cannot be characterized by conventional C‐V measurement.
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78.20.Ls Magneto-optical effects
85.30.Tv Field effect devices
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Observation of subbands in the GaAlAs on two‐dimensional electron gas field‐effect transistor structures

J. Smoliner, M. Hauser, E. Gornik, and G. Weimann

Appl. Phys. Lett. 52, 33 (1988); http://dx.doi.org/10.1063/1.99308 (3 pages) | Cited 4 times

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We have measured the current‐voltage characteristics and its derivatives on GaAs‐GaAlAs field‐effect transistor samples having a semitransparent Au‐Schottky gate contact, varying the band structure by illumination. In these samples electrons tunnel from the two‐dimensional electron gas through the GaAlAs into a Schottky gate. Sharp peaks are observed in dI/dV after illumination at liquid‐helium temperature. Using a self‐consistent model, we are able to explain these peaks by resonant tunneling via subband states in the GaAlAs.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Tv Field effect devices
73.40.Gk Tunneling

Measurement of ultrafast hot‐carrier relaxation in silicon by thin‐film‐enhanced, time‐resolved reflectivity

F. E. Doany and D. Grischkowsky

Appl. Phys. Lett. 52, 36 (1988); http://dx.doi.org/10.1063/1.99309 (3 pages) | Cited 20 times

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Time‐resolved reflectivity measurements with ∼100 fs resolution have revealed an initial 350 fs relaxation time in silicon, believed to be the time it takes hot, photoinjected carriers to relax to the band edge. The measurements were made at low carrier densities (∼1017 cm−3) for which carrier‐carrier processes are negligible, and were facilitated by the greater than order of magnitude enhancement of the change in reflectivity signals that can be produced by the use of thin films.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Infrared photodiodes fabricated with Hg1−xCdxTe grown by molecular beam epitaxy

J. M. Arias, S. H. Shin, J. G. Pasko, and E. R. Gertner

Appl. Phys. Lett. 52, 39 (1988); http://dx.doi.org/10.1063/1.99310 (3 pages) | Cited 8 times

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Device‐quality Hg1−xCdxTe (0.26<x<0.33) epilayers with thicknesses in the range 10–20 μm were grown on (111)B CdTe substrates by molecular beam epitaxy (MBE). The as‐grown layers were p type, and typically had carrier concentrations in the low 1016 cm−3 range and hole mobilities greater than 220 cm2/V s at 77 K. The n+‐p junction was formed by Be ion implantation; unpassivated mesa photodiodes were fabricated by standard photolithographic techniques. Resistance‐area products (R0A) at zero bias were 5.2×106 and 1.4×104 Ω cm2 at 77 K for Hg1−xCdxTe with cutoff wavelengths of 4.0 and 5.7 μm, respectively. These R0A values approach typical ones obtained by liquid phase epitaxy and represent a very promising initial effort for MBE‐grown Hg1−xCdxTe.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.61.Ga II-VI semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Combined Rayleigh and Raman scattering study of AlxGa1−xAs grown via molecular beam epitaxy under reflection high‐energy electron diffraction determined growth conditions

W. C. Tang, P. D. Lao, A. Madhukar, and N. M. Cho

Appl. Phys. Lett. 52, 42 (1988); http://dx.doi.org/10.1063/1.99311 (3 pages) | Cited 1 time

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Rayleigh and Raman scattering studies reveal a direct correlation between the degree of disorder and growth kinetics attendant to the chosen growth conditions in molecular beam epitaxial growth. This inference is derived from studies on AlxGa1−xAs alloys grown under growth conditions indicated by reflection high‐energy electron diffraction intensity dynamics to be near optimal and away from optimal.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
78.30.Fs III-V and II-VI semiconductors
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Characterization of beam‐recrystallized Si films and their Si/SiO2 interfaces in silicon‐on‐insulator structures: The very thin Si film case

D. P. Vu and J. C. Pfister

Appl. Phys. Lett. 52, 45 (1988); http://dx.doi.org/10.1063/1.99312 (3 pages) | Cited 3 times

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A depletion‐mode field‐effect transistor is used to determine the electrical characteristics of a silicon‐on‐insulator (SOI) structure such as the Si film doping, the fixed oxide charges, and the interface trapped charges at the Si/SiO2 interfaces. We consider the case of a very thin Si film, i.e., the Si film thickness is smaller than the maximum depletion layer width. The electrical parameters of the SOI structure are derived from drain‐source current versus gate voltage and transconductance characteristics, provided that the back Si surface is accumulated by a proper substrate biasing. The device can be of small dimensions and can be used in process control without any extra process step.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Oxidation of silicon by a low‐energy ion beam: Experiment and model

S. S. Todorov and E. R. Fossum

Appl. Phys. Lett. 52, 48 (1988); http://dx.doi.org/10.1063/1.99313 (3 pages) | Cited 23 times

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The self‐limiting oxidation of silicon by a low‐energy ion beam (40–120 eV) is described by an implantation‐sputtering model. The thin oxide (40–50 Å) is grown primarily by a surface implantation process which leads to a logarithmic increase of oxide thickness with dose in the absence of sputtering. At higher energies (100 eV), the sputtering of the growing film leads to net self‐limiting growth. The model, which does not include adjustable parameters, is used to describe the dose evolution of the oxide growth as a function of beam energy. The implantation‐sputtering model is found to be in excellent agreement with experimental observations.
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81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.72.uf Ge and Si
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Self‐electro‐optic effect device and modulation convertor with InGaAs/InP multiple quantum wells

I. Bar‐Joseph, G. Sucha, D. A. B. Miller, D. S. Chemla, B. I. Miller, and U. Koren

Appl. Phys. Lett. 52, 51 (1988); http://dx.doi.org/10.1063/1.99315 (3 pages) | Cited 22 times

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We report the first observation of the self‐electro‐optic effect in InGaAs/InP multiple quantum wells, grown by organometallic vapor phase epitaxy. Clear bistability and switching are observed over a range of 40 nm around 1.61 μm with 20–30 V bias. We demonstrate the operation of a modulation convertor, which converts a modulation from a carrier at 1.6 μm onto a carrier at 0.85 μm and vice versa.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Hp Optical processors, correlators, and modulators
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Observation of negative differential resistance from a single barrier heterostructure

D. H. Chow, T. C. McGill, I. K. Sou, J. P. Faurie, and C. W. Nieh

Appl. Phys. Lett. 52, 54 (1988); http://dx.doi.org/10.1063/1.99316 (3 pages) | Cited 30 times

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We report the first experimental observation of negative differential resistance (NDR) due to electron tunneling in a single barrier heterostructure. The largest peak‐to‐valley current ratio attained is slightly greater than 2:1. The single barrier structure studied here consists of a thin CdTe layer sandwiched between two Hg0.78Cd0.22Te electrodes. In this particular material system, NDR can only be achieved at low temperatures (T=4.2 K) due to the dominance of thermionic hole currents at high temperatures. The observation of NDR in this system suggests that the low‐temperature valence‐band discontinuity at the HgTe‐CdTe interface is small (less than 100 mV). Room‐temperature operation of single barrier NDR structures may be possible in other semiconductor systems.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
73.61.Ga II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Metalorganic vapor phase epitaxy of low‐resistivity p‐type ZnSe

T. Yasuda, I. Mitsuishi, and H. Kukimoto

Appl. Phys. Lett. 52, 57 (1988); http://dx.doi.org/10.1063/1.99317 (3 pages) | Cited 93 times

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Low‐resistivity p‐type ZnSe layers have been successfully grown on GaAs substrates by metalorganic vapor phase epitaxy with the use of dimethylzinc and diethylselenide as source materials and lithium nitride as the dopant. The lowest resistivity achieved is 0.2 Ω cm, and the highest carrier concentration is 9×1017 cm−3. ZnSe p‐n diodes fabricated by this technique have shown blue emission; the spectral peak is located at 467 nm.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.61.Ga II-VI semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
85.60.Jb Light-emitting devices

New type of solid phase epitaxy of alloy semiconductors by electron beam irradiation

Takao Wada and Yoshinobu Maeda

Appl. Phys. Lett. 52, 60 (1988); http://dx.doi.org/10.1063/1.99318 (3 pages) | Cited 11 times

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Solid phase epitaxial layers of AlxGa1−xSb (x≂0.26–0.28) were grown by using an electron beam doping method on a (100)GaSb substrate at 50 °C. Surfaces of Al layers deposited by vacuum evaporation on GaSb wafers were irradiated with a fluence of 0.1–5.6×1018 electrons cm−2 at 7 MeV. After the irradiation and removal of the Al layer, the epilayers with a thickness of ∼400 Å before annealing were measured by a secondary‐ion mass spectrometer, an x‐ray photoelectron spectroscope, an x‐ray diffractometer, and a reflection high‐energy electron diffractometer.
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81.15.Np Solid phase epitaxy; growth from solid phases
61.80.Fe Electron and positron radiation effects
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Fx Diffusion; interface formation

Influence of oxygen implantation on the carrier concentration profile in p‐GaAs

T. Humer‐Hager and P. Zwicknagl

Appl. Phys. Lett. 52, 63 (1988); http://dx.doi.org/10.1063/1.99319 (2 pages) | Cited 7 times

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The effect of oxygen implantation in p‐type GaAs is discussed. Be and O ions are co‐implanted into semi‐insulating GaAs. Rapid thermal annealing with peak temperatures up to 900 °C is employed to activate the free carriers. The Be/O implanted layers exhibit a distinct narrowing of the carrier profile as compared to the pure Be implantation. This is ascribed to the formation of deep donor complexes associated with oxygen which can compensate the shallow Be acceptors.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors
66.30.J- Diffusion of impurities

‘‘Soft threshold’’ result in impact ionization derived from ‘‘hard‐sphere’’ model

R. C. Woods

Appl. Phys. Lett. 52, 65 (1988); http://dx.doi.org/10.1063/1.99320 (2 pages) | Cited 4 times

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It has previously been shown that a result similar to the Keldysh formula [L. V. Keldysh, Sov. Phys. JETP 37, 509 (1960)], for the probability of impact ionization in an avalanching semiconductor, can be derived using a purely classical model. In this letter an even simpler model, the hard‐sphere model, is used to derive an analogous relation, showing that the ‘‘soft threshold’’ effect is due largely to the geometry of the interaction between the particles concerned, rather than the nature of the interaction itself.
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72.20.Dp General theory, scattering mechanisms
72.20.Ht High-field and nonlinear effects
72.40.+w Photoconduction and photovoltaic effects
79.20.-m Impact phenomena (including electron spectra and sputtering)

Laser irradiation effects on photoluminescence spectra of undoped GaAs grown by metalorganic vapor phase epitaxy

Jun‐ichi Kusano, Yusaburo Segawa, Sohachi Iwai, Yoshinobu Aoyagi, and Susumu Namba

Appl. Phys. Lett. 52, 67 (1988); http://dx.doi.org/10.1063/1.99645 (2 pages) | Cited 2 times

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Photoluminescence spectra of undoped GaAs grown by metalorganic vapor phase epitaxy with Ar+ laser irradiation were measured at 1.8 K. The enhancement of the incorporation of the carbon acceptor and the increase of the luminescence intensity were recognized as laser irradiation effects. These experimental results suggest that the surface reaction between the radicals involving the Ga atom and the photoinduced carrier at the substrate surface is enhanced by the laser irradiation.
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78.55.Cr III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Reactive ion beam etching of Y‐Ba‐Cu‐O superconductors

S. Matsui, N. Takado, H. Tsuge, and K. Asakawa

Appl. Phys. Lett. 52, 69 (1988); http://dx.doi.org/10.1063/1.99321 (3 pages) | Cited 28 times

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It has been found that a reactive ion beam etching (RIBE) using Cl2 gas is useful for microfabrication of Y‐Ba‐Cu‐O superconductors. The etching yield enhancement of Y‐Ba‐Cu‐O is observed for Cl2 RIBE. The etching yield of Y‐Ba‐Cu‐O at 400 V accelerating voltage, 2×10−3 Torr Cl2 pressure for Cl2 RIBE is 2, which is twice that for Ar ion beam etching. Y‐Ba‐Cu‐O submicron patterns have been fabricated by focused ion beam lithography and Cl2 RIBE. Moreover, a Y‐Ba‐Cu‐O superconducting line with a 4‐μm linewidth has been fabricated by annealing an as‐sputtered Y‐Ba‐Cu‐O line pattern.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
74.78.-w Superconducting films and low-dimensional structures
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
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