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11 Jan 1988

Volume 52, Issue 2, pp. 85-170

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Generation of blue light by intracavity frequency mixing of the laser and pump radiation of a miniature neodymium:yttrium aluminum garnet laser

W. P. Risk, J.‐C. Baumert, G. C. Bjorklund, F. M. Schellenberg, and W. Lenth

Appl. Phys. Lett. 52, 85 (1988); http://dx.doi.org/10.1063/1.99041 (3 pages) | Cited 26 times

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Potassium titanyl phosphate (KTiOPO4,KTP) has been used to generate blue 459‐nm radiation by intracavity sum frequency mixing of the circulating 1064‐nm laser radiation of a miniature neodymium:yttrium aluminum garnet laser and the 809‐nm radiation used as the pump source. A blue output power of approximately 1 mW cw was obtained using 275 mW of pump power from an infrared dye laser. Gain‐switched operation leading to high 459‐nm peak powers was demonstrated. Direct rapid modulation of the blue radiation was achieved by modulating the pump. In preliminary experiments a high‐power laser diode was used as the pump source for the generation of blue radiation.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Fc Modulation, tuning, and mode locking

Ultimate limit in low threshold quantum well GaAlAs semiconductor lasers

K. Y. Lau, P. L. Derry, and A. Yariv

Appl. Phys. Lett. 52, 88 (1988); http://dx.doi.org/10.1063/1.99042 (3 pages) | Cited 26 times

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Gain measurements were performed on buried heterostructure single quantum well lasers to ascertain the transparency current density, which represents a basic limit in the threshold current. By using the optimal design approach, a lowest threshold of 0.55 mA in a 120‐μm‐long device was achieved. Modulation of the low threshold laser by a pseudorandom digital stream at 1.3 Gbit/s without current bias is demonstrated.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics

Chirp and cw linewidth measurements of integrated external cavity lasers

N. K. Dutta, T. Cella, A. B. Piccirilli, R. L. Brown, and C. Green

Appl. Phys. Lett. 52, 91 (1988); http://dx.doi.org/10.1063/1.99043 (2 pages) | Cited 4 times

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Single‐frequency integrated external cavity distributed Bragg reflector lasers emitting near 1.5 μm have been fabricated. The chirp and cw linewidth measurements of these devices show that lasers with long external cavity exhibit lower chirp and lower cw linewidth compared to lasers with short external cavity. The experimental data are explained by using theoretical calculations.
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42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Gallium arsenide photoluminescence under picosecond‐laser‐driven shock compression

X. Z. Lu, R. Garuthara, S. Lee, and R. R. Alfano

Appl. Phys. Lett. 52, 93 (1988); http://dx.doi.org/10.1063/1.99044 (3 pages) | Cited 6 times

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A pump‐and‐probe technique was used to investigate shock effects on the photoluminescence spectra (∼833 nm) at T=80 K due to the direct transition E0 from the Γ6 conduction band to the Γ8 fourfold degenerate top valence band in GaAs. Under the shock loading condition, the photoluminescence peak was observed to blue shift and split into two components, corresponding to the transitions from the Γ6 conduction band to the valence heavy‐ and light‐hole subbands, because of symmetry breaking by the uniaxial shock compression along the [001] direction. From the blue shift of the photoluminescence peaks, we deduced our picosecond‐laser‐driven shock pressure of ∼10 kbar.
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78.55.Cr III-V semiconductors
62.50.-p High-pressure effects in solids and liquids
07.35.+k High-pressure apparatus; shock tubes; diamond anvil cells

Three‐dimensional reconstruction of the ion velocity distribution function of plasma with a retarding‐grid analyzer

Naofumi Iwama, Thierry Lehner, Hisayoshi Noziri, and Masataka Okado

Appl. Phys. Lett. 52, 96 (1988); http://dx.doi.org/10.1063/1.99045 (2 pages) | Cited 1 time

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A study of computerized tomography is made for the purpose of reconstructing the ion velocity distribution function of plasma in the three‐dimensional velocity space. A conventional type of ion energy analyzer with retarding grids is rotated in a plasma in order to acquire the data to be processed. Experimental results are presented on an argon plasma with a low‐energy ion beam, which is generated in a double‐plasma machine.
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52.65.-y Plasma simulation
52.25.Tx Emission, absorption, and scattering of particles
52.40.Mj Particle beam interactions in plasmas

Time‐of‐flight study on the thermal etching of Al with Cl2

R. J. A. A. Janssen, A. W. Kolfschoten, and G. N. A. van Veen

Appl. Phys. Lett. 52, 98 (1988); http://dx.doi.org/10.1063/1.99046 (3 pages) | Cited 4 times

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A pseudorandom cross‐correlation technique has been used to study the thermal etching of aluminum with molecular chlorine. Time‐of‐flight (TOF) distributions of particles desorbing from the substrate are measured by modulating the ejected product beam. Modulation is achieved by a rotating chopping disk with slots in a pseudorandom sequence on its periphery. TOF distributions and temperature‐dependent reaction product yields are measured for the products desorbing from the chlorinated aluminum substrate in the temperature range from 300 to 900 K. A reaction mechanism will be discussed in some detail.
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81.05.Bx Metals, semimetals, and alloys
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Diffusion of reactive ion beam etched polymers

Stanley F. Tead, William E. Vanderlinde, Arthur L. Ruoff, and Edward J. Kramer

Appl. Phys. Lett. 52, 101 (1988); http://dx.doi.org/10.1063/1.99062 (2 pages) | Cited 5 times

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The diffusion of deuterated polystyrene (d‐PS) in a polystyrene matrix was used to probe the damage to the polymer surface caused by reactive ion beam etching (RIBE). Diffusion was seen to be hindered in a d‐PS film treated by RIBE, an immobilization apparently due to crosslinking of the surface monolayer of the polymer sample.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.25.H- Macromolecular and polymers solutions; polymer melts
66.10.C- Diffusion and thermal diffusion

Picosecond reflection high‐energy electron diffraction

H. E. Elsayed‐Ali and G. A. Mourou

Appl. Phys. Lett. 52, 103 (1988); http://dx.doi.org/10.1063/1.99063 (2 pages) | Cited 36 times

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Reflection high‐energy electron diffraction with picosecond time resolution is demonstrated. The surface diffraction patterns are obtained using a laser driven picosecond electron gun. Due to the synchronization of the photogenerated electron pulses with the laser source, such a technique provides a picosecond time‐resolved surface structural probe sensitive to the first few monolayers.
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61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Rh Phase transitions and critical phenomena

X‐ray double‐crystal characterization of molecular beam epitaxially grown Si/Si1−xGex strained‐layer superlattices

J.‐M. Baribeau

Appl. Phys. Lett. 52, 105 (1988); http://dx.doi.org/10.1063/1.99064 (3 pages) | Cited 19 times

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We report the first study of Si/Si1−xGex strained‐layer superlattices using x‐ray double‐crystal diffractometry. Symmetric rocking curves (400) were used to determine the structural parameters and strain distribution. All the superlattices were found to have excellent crystalline quality and uniformity both in thickness and alloy composition. Kinematical simulations of rocking curves revealed that most of the misfit between Si and Si1−xGex is accommodated by lattice deformation of the alloy layers. A small tensile strain (∼0.05%) in the growth direction was also found in Si and was attributed to the difference in thermal expansion coefficients of Si and Si1−xGex.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Liquid phase epitaxy of Pb1−xEuxTe thin films

A. Hacham, U. El‐Hanany, S. Rotter, and Yoram Shapira

Appl. Phys. Lett. 52, 108 (1988); http://dx.doi.org/10.1063/1.99065 (3 pages)

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Epitaxial layers of Pb1−xEuxTe with x<0.06 have been grown for the first time using liquid phase epitaxy. The epitaxy was done from Te‐rich solutions since the commonly used Pb solutions, which exothermally form Pb‐Eu intermetallics, cannot be used to grow this compound. The basic growth parameters and conditions were investigated. The results show that the incorporation of Eu into PbTe lattice is an endothermal process, with an activation energy of 1.0 eV. The reported technique yields device quality layers showing flat surfaces and sharp interfaces.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
85.60.Gz Photodetectors (including infrared and CCD detectors)
68.35.B- Structure of clean surfaces (and surface reconstruction)

Low‐frequency noise measurements on n‐InGaAs/p‐InP junction field‐effect transistor structures

S. Kugler, K. Steiner, U. Seiler, K. Heime, and E. Kuphal

Appl. Phys. Lett. 52, 111 (1988); http://dx.doi.org/10.1063/1.99066 (3 pages) | Cited 3 times

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Deep level analysis in the ohmic regime of ungated n‐InGaAs/p‐InP junction field‐effect transistor structures was made by low‐frequency noise measurements. The noise spectra exhibit two deep trap levels in the n‐InGaAs channel with activation energies of 0.49 and 0.37 eV. The related capture cross sections are 7×10−15 and 4×10−16 cm2, respectively.
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85.30.Tv Field effect devices
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Td Noise processes and phenomena
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Excitation and decay mechanisms of the intra‐4f luminescence of Yb3+ in epitaxial InP:Yb layers

W. Körber and A. Hangleiter

Appl. Phys. Lett. 52, 114 (1988); http://dx.doi.org/10.1063/1.99067 (3 pages) | Cited 48 times

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The decay and excitation processes of internal transitions of Yb3+(4f13) incorporated in InP were investigated by means of time‐resolved photoluminescence and photoluminescence excitation spectroscopy. From the temperature dependence of the excited state lifetime we find several decay mechanisms, including a bound‐exciton‐like Auger process, energy transfer, and thermal depopulation. Excitation spectroscopy reveals that free carriers are needed during the excitation process of Yb centers.
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71.55.Eq III-V semiconductors
78.55.Cr III-V semiconductors
73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Very high purity InP epilayer grown by metalorganic chemical vapor deposition

M. Razeghi, Ph. Maurel, M. Defour, F. Omnes, G. Neu, and A. Kozacki

Appl. Phys. Lett. 52, 117 (1988); http://dx.doi.org/10.1063/1.99068 (3 pages) | Cited 20 times

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Very high purity InP epilayers have been grown by low‐pressure metalorganic chemical vapor deposition growth technique using trimethylindium as In source. Residual doping levels as low as 3×1013 cm−3 , with Hall mobility as high as 6000 cm2  V−1  s−1 at 300 K and 200 000 cm2  V−1  s−1 at 50 K have been measured. These results and photoluminescence at 2 K showed that it is the purest InP epilayer ever reported in the literature, with zero compensation ratio.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.55.Cr III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Low‐loss short‐wavelength optical waveguides using ZnSe‐ZnS strained‐layer superlattices

Toshiya Yokogawa, Mototsugu Ogura, and Takao Kajiwara

Appl. Phys. Lett. 52, 120 (1988); http://dx.doi.org/10.1063/1.99069 (3 pages) | Cited 7 times

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Low‐loss short‐wavelength optical ridge waveguides using ZnSe‐ZnS strained‐layer superlattices (SLS’s) were successfully fabricated on GaAs substrates by low‐pressure metalorganic vapor phase epitaxy. A propagation loss α as low as 0.71 cm−1 was obtained for the SLS waveguide composed of 80 periods of ZnSe(50 Å)‐ZnS(50 Å) at the 0.633‐μm wavelength TE fundamental mode. Therefore, this waveguide may be suited for optoelectronic integrated circuits composed of II‐VI and III‐V compound semiconductor devices. Furthermore, these waveguides exhibited a large difference in the propagation loss between TE and TM polarizations which may be related to the birefringence for TE and TM polarizations due to the slight anisotropy of the refractive index in the ZnSe‐ZnS superlattice structure. This birefringence effect will be very useful for a polarizing optical device.
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42.79.Gn Optical waveguides and couplers
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Photoluminescence from InGaAs‐GaAs strained‐layer superlattices grown by flow‐rate modulation epitaxy

Michio Sato and Yoshiji Horikoshi

Appl. Phys. Lett. 52, 123 (1988); http://dx.doi.org/10.1063/1.99070 (3 pages) | Cited 8 times

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In0.063Ga0.937As‐GaAs strained‐layer superlattices are grown by alternately supplying organometals and arsine. This method is called flow‐rate modulation epitaxy. These superlattices display low‐temperature (2 K) photoluminescence with a very narrow linewidth that is less than 1 meV. Three sharp lines are clearly resolved in the photoluminescence spectra. Model calculation confirms that these lines are not caused by a fluctuation of well thickness. These lines result from electronic transitions through different exciton states, which are free and bound excitons. Flow‐rate modulation epitaxy enables the growth of atomically flat InGaAs‐GaAs interfaces which make the excitonic emission lines very sharp. Thus, free‐exciton and impurity‐bound exciton lines are well resolved.
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78.55.Cr III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Small lattice relaxation at the DX center as studied by extended x‐ray absorption fine structure on Se‐doped AlGaAs

M. Mizuta and T. Kitano

Appl. Phys. Lett. 52, 126 (1988); http://dx.doi.org/10.1063/1.99071 (3 pages) | Cited 32 times

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Lattice relaxation at the Se DX center in Al0.38Ga0.62As was determined by the extended x‐ray absorption fine structure (EXAFS). During the EXAFS measurements the deep and shallow (metastable) states of the DX center were prepared and the resultant difference of the nearest‐neighbor distance around Se between the two electronic states was found to be quite small (less than 0.04 Å). The result is indicative of small lattice relaxation at the DX center.
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71.55.Eq III-V semiconductors
61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Sensitivity of Si diffusion in GaAs to column IV and VI donor species

D. G. Deppe, N. Holonyak, and J. E. Baker

Appl. Phys. Lett. 52, 129 (1988); http://dx.doi.org/10.1063/1.99072 (3 pages) | Cited 41 times

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Secondary ion mass spectroscopy and carrier concentration measurements are used to characterize Si diffusion into GaAs wafers containing two fundamentally different forms of donors, the column IV donors Si or Sn and the column VI donors Se or Te. A decrease in the Si diffusion rate is found in GaAs containing the column VI donors compared to the column IV donors. This trend is consistent with the model in which the Si diffuses as donor‐gallium‐vacancy complexes. The decrease in the Si diffusion coefficient is attributed to the greater binding energy of column VI donor‐gallium‐vacancy nearest‐neighbor complexes, thus reducing the concentration of free‐gallium vacancies available to complex with the Si.
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66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Bb Theories and models of crystal defects

Resonant tunneling and negative differential resistance in a variably spaced superlattice energy filter

C. J. Summers, K. F. Brennan, A. Torabi, and H. M. Harris

Appl. Phys. Lett. 52, 132 (1988); http://dx.doi.org/10.1063/1.99073 (3 pages) | Cited 18 times

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Resonant tunneling is reported for the first time in a series of variably spaced AlGaAs/GaAs multiple quantum well structures in which the levels in adjacent quantum wells are brought into alignment by an applied bias. Resonant tunneling and negative differential resistance effects are observed for two‐ and three‐well structures designed for electron injection at voltages between 0.1 and 0.2 V.
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73.40.Gk Tunneling
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
79.60.Dp Adsorbed layers and thin films
79.70.+q Field emission, ionization, evaporation, and desorption
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

High‐temperature stability of Nb/GaAs and NbN/GaAs interfaces

J. Ding, B. Lee, R. Gronsky, J. Washburn, D. Chin, and T. Van Duzer

Appl. Phys. Lett. 52, 135 (1988); http://dx.doi.org/10.1063/1.99074 (3 pages) | Cited 2 times

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The interface stabilities of Nb/GaAs and NbN/GaAs contacts at temperatures up to 700 °C for Nb/GaAs and 850 °C for NbN/GaAs have been investigated by transmission electron microscopy and x‐ray diffractometry techniques. Results reveal that a Nb/GaAs reaction takes place at temperatures above 600 °C, and interdiffusion at the NbN/GaAs interface occurs at temperatures above 800 °C. The correlation between the observed interface morphologies before and after annealing and previously reported electrical properties of these contacts is also discussed.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Fx Diffusion; interface formation
73.40.Ns Metal-nonmetal contacts
81.40.Rs Electrical and magnetic properties related to treatment conditions

Luminescence of heteroepitaxial zinc oxide

S. Bethke, H. Pan, and B. W. Wessels

Appl. Phys. Lett. 52, 138 (1988); http://dx.doi.org/10.1063/1.99030 (3 pages) | Cited 141 times

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Thin layers of ZnO were grown on (0001) oriented sapphire by organometallic chemical vapor deposition. Low‐temperature photoluminescence indicates that near‐band‐edge luminescence dominates the spectrum. In contrast to bulk grown material deep level luminescence for the layers is relatively weak.
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78.55.Et II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Hot‐electron flow in an inhomogeneous field

Michael Artaki

Appl. Phys. Lett. 52, 141 (1988); http://dx.doi.org/10.1063/1.99031 (3 pages) | Cited 12 times

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The drift velocity for hot electrons is expected to depend on the gradient of an inhomogeneous field, dF/dx, through a term proportional to a phenomenological length constant. Estimates suggest that the field gradient effect can be significant in short channel devices. Monte Carlo calculations of this length coefficient have been made, and numerical results are presented for electrons in silicon.
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72.20.Ht High-field and nonlinear effects
72.20.Dp General theory, scattering mechanisms
85.30.De Semiconductor-device characterization, design, and modeling

Initial stages of epitaxial growth: Gallium arsenide on silicon

M. Zinke‐Allmang, L. C. Feldman, and S. Nakahara

Appl. Phys. Lett. 52, 144 (1988); http://dx.doi.org/10.1063/1.99032 (3 pages) | Cited 18 times

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A model for the morphology of the first layers of GaAs on Si(111) is proposed based on observations of gallium cluster formation on As‐terminated Si(111). In this model Ga is mobile and tends to form clusters, but is immobilized by arriving As atoms. Substrate‐temperature‐dependent ion scattering and transmission electron microscopy investigations are in agreement with this model and allow the extraction of a clustering related activation energy. These results establish conditions necessary for uniform film growth of GaAs/Si at the important film/substrate interface.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)
66.30.-h Diffusion in solids

Growth of p‐type ZnSe:Li by molecular beam epitaxy

H. Cheng, J. M. DePuydt, J. E. Potts, and T. L. Smith

Appl. Phys. Lett. 52, 147 (1988); http://dx.doi.org/10.1063/1.99033 (3 pages) | Cited 62 times

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Molecular beam epitaxy has been used to grow Li‐doped ZnSe on (100)GaAs substrates, resulting in material which exhibits a low‐temperature photoluminescence spectrum dominated by emission from acceptor‐bound excitons, with no evidence of emission from residual donors. Electrical measurements on these films indicate that, while the resistivity of the material is high, the majority carriers are holes. This is the first report of p‐type conversion in ZnSe grown by molecular beam epitaxy.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ga II-VI semiconductors
78.55.Et II-VI semiconductors

Control of residual impurities in very high purity GaAs grown by organometallic vapor phase epitaxy

S. K. Shastry, S. Zemon, D. G. Kenneson, and G. Lambert

Appl. Phys. Lett. 52, 150 (1988); http://dx.doi.org/10.1063/1.99034 (3 pages) | Cited 23 times

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Very high purity GaAs layers with 77 K electron mobility values as high as 210 000 cm2/V s and a compensation ratio as low as ≊0.05 (NA+ND≊1014 cm−3) have been grown by organometallic vapor phase epitaxy. 4.2 K photoluminescence and magnetophotoluminescence spectra of these layers confirm their high purity. The degree of material purity and the compensation are found to be controllably dependent on the growth conditions, the optimum growth temperature being about 650 °C at a V:III ratio of 17.5.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.55.Cr III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Implanted nitrogen in germanium

H. J. Stein

Appl. Phys. Lett. 52, 153 (1988); http://dx.doi.org/10.1063/1.99035 (2 pages) | Cited 8 times

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The first measurements of localized vibrational modes for N in crystalline Ge are reported. Nitrogen isotopes were implanted into Ge, and infrared absorption measurements were made at 80 K after laser annealing. Four isotopic mass‐shifted infrared absorption bands are observed. Two of the bands in Ge are analogous to those for N pairs in crystalline Si and are assigned to N pairs in Ge.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
61.72.uf Ge and Si
63.20.Pw Localized modes
71.55.Ht Other nonmetals
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