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23 May 1988

Volume 52, Issue 21, pp. 1759-1836

Page 1 of 2 Pages Next Page | Jump to Page

High‐efficiency fast response in photorefractive BaTiO3 at 120 °C

D. Rytz, M. B. Klein, R. A. Mullen, R. N. Schwartz, G. C. Valley, and B. A. Wechsler

Appl. Phys. Lett. 52, 1759 (1988); http://dx.doi.org/10.1063/1.99721 (3 pages) | Cited 10 times

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Measurements of beam coupling gain and response time in BaTiO3 show a decrease by two orders of magnitude in response time and an unchanged gain coefficient as the temperature is increased from 20 to 120 °C.
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78.20.Jq Electro-optical effects
72.40.+w Photoconduction and photovoltaic effects
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Origin of modulation‐induced mode partition and Gb/s system performance of highly single‐mode 1.5 μm distributed feedback lasers

M. M. Choy, P. L. Liu, and S. Sasaki

Appl. Phys. Lett. 52, 1762 (1988); http://dx.doi.org/10.1063/1.99635 (3 pages) | Cited 5 times

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Modulation‐induced mode partition in distributed feedback lasers was investigated by photon statistics and bit‐error‐rate measurements. Its origin is explained for the first time in terms of the transient index changes and the resulting corrugation dephasing. We also propose device screening and desirable parameters for error‐free operation.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Characteristics of a monolithically integrated doping superlattice optical circuit

G. Hasnain, C. Chang‐Hasnain, A. Dienes, and J. R. Whinnery

Appl. Phys. Lett. 52, 1765 (1988); http://dx.doi.org/10.1063/1.99636 (3 pages)

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Characteristics of a monolithically integrated optical circuit made of GaAs doping superlattices are investigated. Qualitative explanations of the results are given. The results show that doping superlattices have potential for integrated optics applications.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
85.60.-q Optoelectronic devices
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.82.-m Integrated optics

Molecular beam epitaxial GaAs optical detectors on silica fibers

Wei‐Qi Li, Albert Chin, Pallab Bhattacharya, and S. DiVita

Appl. Phys. Lett. 52, 1768 (1988); http://dx.doi.org/10.1063/1.99620 (3 pages) | Cited 1 time

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By using molecular beam epitaxy and post‐growth annealing techniques, we have successfully made GaAs interdigitated photoconductive detectors on D‐shaped silica fibers. The detectors exhibit low leakage current and internal photoconductive gains of up to 15 are measured. To our knowledge this is the first realization of active III‐V optoelectronic devices on fibers and opens up the possibility of realizing optoelectronic integration and circuits directly on fibers.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.81.Pa Sensors, gyros

Coherent addition of AlGaAs lasers using microlenses and diffractive coupling

James R. Leger, Miles L. Scott, and Wilfrid B. Veldkamp

Appl. Phys. Lett. 52, 1771 (1988); http://dx.doi.org/10.1063/1.99621 (3 pages) | Cited 63 times

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A near single‐lobed far‐field pattern was obtained from coherent operation of a nonevanescently coupled AlGaAs laser diode array. A diffractive microlens array collimated the individual beams to approximate a plane wave, and diffractive coupling from an external cavity mirror provided mutual coherence. A diffraction‐limited far‐field pattern was observed with 82% of the power contained in the central lobe. The method is directly applicable to two‐dimensional laser arrays and can be implemented as a single thin optical element.
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42.55.Mv Dye lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes

Dynamics of phase‐locked semiconductor laser arrays

S. S. Wang and H. G. Winful

Appl. Phys. Lett. 52, 1774 (1988); http://dx.doi.org/10.1063/1.99622 (3 pages) | Cited 77 times

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Time‐dependent coupled mode theory is used to investigate the stability of phase‐locked semiconductor laser arrays. The output of individual array elements is dynamically unstable and exhibits large amplitude chaotic pulsations. The total output initially exhibits damped relaxation oscillations and then settles down to a quasi‐steady state characterized by small amplitude fluctuations. The theory predicts both the pulsation frequency and the phase lock‐in time of the array.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Rz Doped-insulator lasers and other solid state lasers

Erasable optical memory media with thermoplastic/absorbent double layer

M. Kobayashi, A. Yabe, Y. Maeno, K. Oishi, K. Kawamura, and S. Ohno

Appl. Phys. Lett. 52, 1777 (1988); http://dx.doi.org/10.1063/1.99623 (2 pages)

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A thermoplastic/absorbent double layer type optical memory was developed. The thermoplastic was monodispersed polystyrene of which the molecular weight was 800–110 000, and the absorbent was Cu phthalocyanine. The erasing properties were dependent on the molecular weight. The medium was best when the molecular weight was 2000 and the record/erase repetition could be more than 350. The dye addition to the polystyrene increased the recording sensitivity but decreased the maximum limit of record/erase repetition, so the dye content was preferable to be less than 10 wt. %.
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78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
42.79.Vb Optical storage systems, optical disks

Graded‐thickness samples for molecular beam epitaxial growth studies of GaAs/Si heteroepitaxy

D. K. Biegelsen, F. A. Ponce, B. S. Krusor, J. C. Tramontana, and R. D. Yingling

Appl. Phys. Lett. 52, 1779 (1988); http://dx.doi.org/10.1063/1.99624 (3 pages) | Cited 20 times

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In this letter we discuss the technique of graded‐thickness sample deposition for studying the growth mechanisms of GaAs heteroepitaxy on Si. We can observe the continuous evolution from the initial clean surface, through nucleation, growth, and coalescence of the deposited material. We describe results for a sample typical of buffer layer growth in the two‐step molecular beam epitaxial deposition of GaAs directly on Si. We are led to a specific model for the three‐dimensional nucleation and growth mechanisms in which Ga atom diffiusion dominates the stable cluster formation, As capture from the vapor by the islands immobilizes the Ga, and island growth is limited by the binding of diffusing Ga.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
66.30.H- Self-diffusion and ionic conduction in nonmetals

Coherent precipitation of silicon nitride in silicon

V. S. Kaushik, A. K. Datye, D. L. Kendall, B. Martinez‐Tovar, and D. R. Myers

Appl. Phys. Lett. 52, 1782 (1988); http://dx.doi.org/10.1063/1.99722 (3 pages) | Cited 9 times

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Coherent growth of α‐Si3N4 precipitates is observed in a silicon matrix after implantation of 150 keV N+ at a dose of 1×1018/cm2 into (110) silicon. The near‐channeling conditions lead to a band of discrete precipitates, 0.5 μm below the continuous, polycrystalline buried nitride layer. No misfit dislocations or strain contrast were observed in the silicon matrix despite a 10% lattice mismatch along the Si3 N4 [0001] direction and a 1% mismatch along directions perpendicular to [0001]. The mismatch appears to be accommodated entirely within the precipitate by a mosaic structure consisting of single‐crystal subunits, coherent with Si at the Si3 N4 (0001)/Si{111} interface, but incoherent perpendicular to these planes.
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81.30.Mh Solid-phase precipitation
61.72.uf Ge and Si

Time‐resolved x‐ray study of Ge during pulsed laser melting

J. Z. Tischler, B. C. Larson, and D. M. Mills

Appl. Phys. Lett. 52, 1785 (1988); http://dx.doi.org/10.1063/1.99625 (3 pages) | Cited 10 times

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Nanosecond resolution time‐resolved x‐ray diffraction has been used to make the first measurements of the liquid‐solid interface overheating and undercooling in germanium. The results show an orientation‐dependent undercooling for growth on (111) and (001) faces. For both the (111) and (001) faces the velocity versus temperature interface response function has a slope of ∼5 K/(m/s), except for undercooling on the (111) face where the slope is 20 K/(m/s).
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68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
64.70.D- Solid-liquid transitions
68.35.Rh Phase transitions and critical phenomena
44.30.+v Heat flow in porous media

Influence of Si film thickness on growth enhancement in Si lateral solid phase epitaxy

Masahiro Moniwa, Kikuo Kusukawa, Eiichi Murakami, Terunori Warabisako, and Masanobu Miyao

Appl. Phys. Lett. 52, 1788 (1988); http://dx.doi.org/10.1063/1.99626 (3 pages) | Cited 8 times

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Lateral solid phase epitaxial growth (L‐SPE) of Si on SiO2 film was investigated as a function of deposited amorphous Si (a‐Si) film thickness. Both the L‐SPE rate and the annealing time necessary for {111} facet formation increased with film thickness. As a result, a large L‐SPE length (9 μm) under {110} facet growth was obtained for a 1.6‐μm‐thick film sample. Above the critical film thickness (>2 μm), crack formation in a‐Si films was observed during deposition. This indicates that intrinsic stresses play an important role in this growth enhancement.
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81.15.Np Solid phase epitaxy; growth from solid phases
68.55.-a Thin film structure and morphology
61.50.Ks Crystallographic aspects of phase transformations; pressure effects
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

New accurate exploitation of thermally stimulated ionic current curves for alkali contaminated metal‐oxide‐silicon structures

C. Choquet and B. Balland

Appl. Phys. Lett. 52, 1791 (1988); http://dx.doi.org/10.1063/1.99627 (3 pages) | Cited 1 time

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Hazardous contamination may appear at different steps of metal‐oxide‐silicon (MOS) process. It is thus important to identify the ionic species and to evaluate their concentrations. This is often studied by the means of thermally stimulated ionic current (TSIC). But up to now TSIC curve interpretations use more or less justified approximations. A new numerical technique of TSIC curves exploitation is reported. Our method is accurate because it is not based on approximations; moreover, this one is well adapted to computer processing. We present results on K+ contaminated MOS structures. Our results are compared with those obtained by other methods.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
73.20.Hb Impurity and defect levels; energy states of adsorbed species
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Metal contacts to GaAs with 1 eV Schottky barrier height

J. R. Waldrop and R. W. Grant

Appl. Phys. Lett. 52, 1794 (1988); http://dx.doi.org/10.1063/1.99628 (3 pages) | Cited 23 times

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Metal Schottky barrier contacts to n‐type (100) GaAs are described in which a 1 eV Schottky barrier height ϕB is achieved by using a very thin Si interface layer to influence the interface Fermi energy EiF. The metals investigated are Au, Cr, and Ti. The contact structure consists of a thick metal in combination with a ∼15–30 Å heavily p‐type Si interface layer. The EiF and interface composition during initial contact formation were obtained by x‐ray photoemission spectroscopy (XPS); the ϕB for the corresponding thick contacts was measured by current‐voltage (I‐V) and capacitance‐voltage (C‐V) techniques. The XPS, I‐V, and C‐V measurements gave consistent results. The 1 eV ϕB for the Si interface layer contact structure is independent of the contact metal.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.30.Hi Surface barrier, boundary, and point contact devices

Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow‐pressure chemical vapor deposition

Tri‐Rung Yew, Kenneth O, and Rafael Reif

Appl. Phys. Lett. 52, 1797 (1988); http://dx.doi.org/10.1063/1.99629 (3 pages) | Cited 1 time

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See Also: Erratum

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This letter presents for the first time the results of low‐temperature (800 °C) silicon epitaxial growth on (100) patterned oxide wafers by ultralow‐pressure chemical vapor deposition. The epitaxial layers were deposited at 6 mTorr of SiH4 following an in situ argon sputter cleaning step. The films on the exposed single‐crystal silicon islands were epitaxial with high structural quality, while those on the oxide were polycrystalline with columnar grains. The growth rate of epitaxial silicon was 2.5 times that of polycrystalline silicon. The transition region between the epitaxial and polycrystalline silicon deposited is very sharp, confined to a boundary which is parallel to the growth direction, and located on the edges of the exposed silicon islands.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.Rh Phase transitions and critical phenomena
68.35.Fx Diffusion; interface formation

Investigation of stress effects on the direct current characteristics of GaAs metal‐semiconductor field‐effect transistors through the use of externally applied loads

Patrick J. McNally, Lisa S. Cooper, James J. Rosenberg, and T. N. Jackson

Appl. Phys. Lett. 52, 1800 (1988); http://dx.doi.org/10.1063/1.99630 (3 pages) | Cited 2 times

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This letter describes an experimental investigation of the effects of mechanical stress on the direct current (dc) electrical parameters in GaAs metal‐semiconductor field‐effect transistors, with the aim of separating out those effects which are direct manifestations of residual stresses in the completed device (e.g., piezoelectric effects) from stress effects which manifest themselves during the device processing (e.g., stress‐enhanced diffusion during implant annealing). This study extends previous work by examining individual transistors under both tensile and compressive loads. Systematic yet nonmonotomic variations in the dc parameters observed in several devices also suggest the possibility of defect generation in the device structures, even at relatively low bulk stresses.
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85.30.Tv Field effect devices
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.40.Ns Metal-nonmetal contacts
77.65.-j Piezoelectricity and electromechanical effects

Limitations of TiSi2 as a source for dopant diffusion

V. Probst, H. Schaber, P. Lippens, L. Van den hove, and R. De Keersmaecker

Appl. Phys. Lett. 52, 1803 (1988); http://dx.doi.org/10.1063/1.99723 (3 pages) | Cited 24 times

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The application of TiSi2 as a dopant diffusion source for boron and arsenic was studied. The TiSi2 layers were formed by the usual salicide process and doped by ion implantation. Diffusion was carried out by various furnace and rapid thermal processing steps. Using secondary ion mass spectrometry, scanning electron microscopy, and x‐ray diffraction, clear evidence for compound formation between Ti and the two dopant species is found. This leads to low dopant concentrations at the silicide/silicon interface, very poor efficiency of the diffusion source, and unacceptably high contact resistivities.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Dv Composition, segregation; defects and impurities
66.30.J- Diffusion of impurities
73.40.Cg Contact resistance, contact potential

Cathodoluminescence observation of metallization‐induced stress variations in GaAs/AlGaAs multiple quantum well structures

B. G. Yacobi, B. Elman, C. Jagannath, A. N. M. Masum Choudhury, and M. Urban

Appl. Phys. Lett. 52, 1806 (1988); http://dx.doi.org/10.1063/1.99631 (3 pages) | Cited 7 times

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Cathodoluminescence scanning electron microscopy is utilized to investigate the stresses present underneath 0.4 μm gold layers deposited on GaAs/AlGaAs multiple quantum well structures grown by molecular beam epitaxy on GaAs substrates. Using the known stress dependence of excitonic lines in quantum wells, the magnitude of stress is determined to be about 1 kbar. The stress‐induced change in the refractive index, attributed to photoelastic effect, is about 0.01 for the structures studied in the present work.
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78.60.Hk Cathodoluminescence, ionoluminescence
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Resonant tunneling in Si/Si1−xGex double‐barrier structures

H. C. Liu, D. Landheer, M. Buchanan, and D. C. Houghton

Appl. Phys. Lett. 52, 1809 (1988); http://dx.doi.org/10.1063/1.99632 (3 pages) | Cited 69 times

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Resonant tunneling of holes has been observed for the first time in double‐barrier diodes with strained Si1−xGex quantum wells formed between unstrained Si barriers. Negative differential resistance with a peak‐to‐valley ratio in current of 1.8 at 77 K and of 2.2 at 4.2 K has been exhibited by a sample with a 3.3‐nm‐wide Si0.79Ge0.21 well between 6.0 nm Si barriers. The positions of the current peaks are in reasonable agreement with calculations of the positions of heavy‐hole levels in the quantum well.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Gk Tunneling

Dislocation reduction by impurity diffusion in epitaxial GaAs grown on Si

D. G. Deppe, N. Holonyak, K. C. Hsieh, D. W. Nam, W. E. Plano, R. J. Matyi, and H. Shichijo

Appl. Phys. Lett. 52, 1812 (1988); http://dx.doi.org/10.1063/1.99633 (3 pages) | Cited 20 times

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Data are presented showing that low‐temperature Zn diffusion (680 °C) is effective in reducing the dislocation density in epitaxial GaAs grown on Si. The GaAs‐on‐Si is analyzed using both cross‐sectional and plan‐view transmission electron microscopy. For comparison, simple thermal annealing of the GaAs‐on‐Si at higher temperature (850 °C) is also performed and analyzed. The reduction in the dislocation density that occurs with Zn diffusion is suggested to be due to the increased concentration of point defects generated during the Zn diffusion, resulting in enhanced dislocation climb. This mechanism is consistent with impurity‐induced layer disordering, via Zn diffusion, in AlxGa1−xAs‐GaAs heterostructures.
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61.72.Bb Theories and models of crystal defects
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
66.30.J- Diffusion of impurities
61.72.Yx Interaction between different crystal defects; gettering effect

Growth of CdSxSe1−x thin films by laser evaporation deposition

H. S. Kwok, J. P. Zheng, S. Witanachchi, L. Shi, and D. T. Shaw

Appl. Phys. Lett. 52, 1815 (1988); http://dx.doi.org/10.1063/1.99657 (2 pages) | Cited 22 times

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Optical quality thin films of CdSxSe1−x were deposited on quartz for various values of x. It was found that these films were polycrystalline in structure, with a high degree of orientation of the c axis. An empirical relationship between the band gap and the lattice constant for the binary system CdS‐CdSe was also obtained.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Calculations on the flux pinning action of ferroelectric crystals inside a ceramic superconductor

Osvaldo F. Schilling

Appl. Phys. Lett. 52, 1817 (1988); http://dx.doi.org/10.1063/1.99724 (2 pages) | Cited 6 times

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Taking as an example the case of BaTiO3 ferroelectric crystals inside an Y1Ba2Cu3Ox matrix (1‐2‐3 compound) it is shown that the ferroelectric properties of such crystals can generate an extra flux pinning effect, in addition to the expected pinning due to the normal character of such inclusions. The calculations show that the additional pinning force attainable depends strongly on the spontaneous polarization and the piezoelectric strain tensor components of the ferroelectric material.
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74.70.-b Superconducting materials other than cuprates
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
77.80.-e Ferroelectricity and antiferroelectricity

High Tc superconductor/noble‐metal contacts with surface resistivities in the 10−10 Ω cm2 range

J. W. Ekin, T. M. Larson, N. F. Bergren, A. J. Nelson, A. B. Swartzlander, L. L. Kazmerski, A. J. Panson, and B. A. Blankenship

Appl. Phys. Lett. 52, 1819 (1988); http://dx.doi.org/10.1063/1.99725 (3 pages) | Cited 100 times

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Contact surface resistivities (product of contact resistance and area) in the 10−10 Ω cm2 range have been obtained for both silver and gold contacts to high Tc superconductors. This is a reduction by about eight orders of magnitude from the contact resistivity of indium solder connections. The contact resistivity is low enough to be considered for both on‐chip and package interconnect applications. The contacts were formed by sputter depositing either silver or gold at low temperatures (<100 °C) on a clean surface of Y1 Ba2 Cu3 O7−δ (YBCO) and later annealing the contacts in oxygen. Annealing temperature characteristics show that for bulk‐sintered YBCO samples there is a sharp decrease in contact resistivity after annealing silver/YBCO contacts in oxygen for 1 h at temperatures above ∼500 °C and gold/YBCO contacts for 1 h above ∼600 °C. Oxygen annealing for longer times (8 h) did not reduce the contact resistivity of silver contacts as much as annealing for 1 h. Auger microprobe analysis shows that indium/YBCO contacts contain a significant concentration of oxygen in the indium layer adjacent to the YBCO interface. Silver and gold contacts, on the other hand, contain almost no oxygen and have favorable interfacial chemistry with low oxygen affinity. Silver also acts as a ‘‘switchable’’ passivation buffer, allowing oxygen to penetrate to the YBCO interface at elevated temperatures, but protecting the YBCO surface at room temperature.
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73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts
81.40.Rs Electrical and magnetic properties related to treatment conditions

Microwave surface resistance of YBa2Cu3O6.9 superconducting films

J. S. Martens, J. B. Beyer, and D. S. Ginley

Appl. Phys. Lett. 52, 1822 (1988); http://dx.doi.org/10.1063/1.99726 (3 pages) | Cited 13 times

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The microwave surface resistance of an YBa2Cu3O6.9 superconducting thick film was measured over the range 7.0–16.7 GHz at 77 K. This was done by placing a sample in a TE01n wavemeter cavity and observing the change in selectivity of the cavity. The material’s surface resistance is of the same order of magnitude as that of silver at 77 K from 8 to 12 GHz and improves about another order at 4.2 K. The power‐law behavior of surface resistance with frequency is probably close to quadratic. This is similar to the behavior of low critical temperature superconductors.
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74.25.N- Response to electromagnetic fields
74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures
73.25.+i Surface conductivity and carrier phenomena

Laser evaporation deposition of superconducting and dielectric thin films

H. S. Kwok, P. Mattocks, L. Shi, X. W. Wang, S. Witanachchi, Q. Y. Ying, J. P. Zheng, and D. T. Shaw

Appl. Phys. Lett. 52, 1825 (1988); http://dx.doi.org/10.1063/1.99727 (3 pages) | Cited 40 times

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We describe here the deposition of superconducting and dielectric thin films by the laser evaporation technique. The characterization of this process, and possible optimization with regards to wavelength and pulse duration of the laser will be discussed.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates

Preparation of superconducting thin films of calcium strontium bismuth copper oxides by coevaporation

C. E. Rice, A. F. J. Levi, R. M. Fleming, P. Marsh, K. W. Baldwin, M. Anzlowar, A. E. White, K. T. Short, S. Nakahara, and H. L. Stormer

Appl. Phys. Lett. 52, 1828 (1988); http://dx.doi.org/10.1063/1.99728 (3 pages) | Cited 35 times

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Superconducting films of Ca‐Sr‐Bi‐Cu oxides have been prepared by coevaporation of CaF2, SrF2, Bi, and Cu, followed by post‐oxidation in wet O2. The films were characterized by four‐probe resistivity measurements, Rutherford backscattering, transmission electron microscopy, x‐ray diffraction, and Hall measurements. Zero resistance was achieved at ∼80 K, although evidence of traces of superconductivity at higher temperatures was seen in resistivity and Hall data. The critical current at 4.2 K was 1.0×106 A cm−2. The films were epitaxial on 〈100〉 and 〈110〉 SrTiO3 substrates. The electrical and structural properties of the films were insensitive to film composition over a wide range of stoichiometries.
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74.78.-w Superconducting films and low-dimensional structures
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
81.15.Kk Vapor phase epitaxy; growth from vapor phase
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