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13 Jun 1988

Volume 52, Issue 24, pp. 2013-2090

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Diffusion suppression of photolytic fragments on laser‐induced chemical vapor deposition

Yoshimitsu Arai, Satoru Yamaguchi, and Takaaki Ohsaki

Appl. Phys. Lett. 52, 2083 (1988); http://dx.doi.org/10.1063/1.99581 (3 pages) | Cited 1 time

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Diffusion suppression of Al fragments formed in a trimethylaluminum atmosphere by an ArF excimer laser during photolytic laser‐induced chemical vapor deposition is investigated. Heavier molecular weight base gas such as Ar is found to act as a diffusion buffer which suppresses the diffusion of Al radicals and atoms. Furthermore, biasing the upper electrode positive relative to the stage is also effective in suppressing photolytic fragment diffusion.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
79.20.Ds Laser-beam impact phenomena
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
66.30.-h Diffusion in solids

Evidence of Schottky emission in scanning tunneling microscopes operated in ambient air

J. Jahanmir, P. E. West, and T. N. Rhodin

Appl. Phys. Lett. 52, 2086 (1988); http://dx.doi.org/10.1063/1.99582 (3 pages) | Cited 8 times

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We demonstrate that the electron transfer mechanism in scanning tunneling microscopes operated in air follows the Schottky equation. Schottky emission dominates electron transfer mechanism in microscopes operated in air because of low effective potential barrier heights. This is supported by currents and gap distances that are larger than when tunneling is the predominant electron transfer mechanism.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Gk Tunneling
73.40.Rw Metal-insulator-metal structures
FREE

Comment on ‘‘Current‐density profiles for a Ga+ ion microprobe and their lithographic implications’’ [Appl. Phys. Lett. 51, 1960 (1987)]

R. L. Kubena and J. W. Ward

Appl. Phys. Lett. 52, 2089 (1988); http://dx.doi.org/10.1063/1.99566 (1 page) | Cited 1 time

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Abstract Unavailable
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
81.65.-b Surface treatments
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
FREE

Erratum: Structure and superconducting properties of Y1Ba2Cu3O7−σ films prepared by transversely excited atmospheric pressure CO2 pulsed laser evaporation [Appl. Phys. Lett. 52, 1008 (1988)]

S. Miura, T. Yoshitake, T. Satoh, Y. Miyasaka, and N. Shohata

Appl. Phys. Lett. 52, 2090 (1988); http://dx.doi.org/10.1063/1.99664 (1 page)

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Abstract Unavailable
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
99.10.Cd Errata
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