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27 Jun 1988

Volume 52, Issue 26, pp. 2203-2269

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Experimental observation of time jitter in semiconductor laser turn‐on

P. Spano, A. D’Ottavi, A. Mecozzi, and B. Daino

Appl. Phys. Lett. 52, 2203 (1988); http://dx.doi.org/10.1063/1.99533 (2 pages) | Cited 23 times

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We report an experimental study which shows how time jitter in semiconductor lasers, which arises when such sources are switched from below to above threshold, is related to the actual operating conditions. The effect is observed both in distributed feedback and in Fabry–Perot lasers, even if in the latter case it becomes more and more negligible when the output power of the final state is increased.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Chemical precursor to optical damage detected by laser ionization mass spectrometry

R. C. Estler and N. S. Nogar

Appl. Phys. Lett. 52, 2205 (1988); http://dx.doi.org/10.1063/1.99766 (3 pages) | Cited 4 times

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Mass spectrometry was used in conjunction with Nomarski microscopy to characterize the initiation of optical damage in selected commercial optics. The reflective optics (351 nm) consisted of Sc2O3/SiO2 multilayer coatings on 7940 (glass) substrates. These samples were exposed to loosely focused 1.06 μm, 10 ns pulses at 10 Hz. At fluences above 100 mJ/cm2, transient iron signals were observed at each increasing fluence level, with concomitant appearance of small circular (10 μm) pits in the surface. The latter was observed by Nomarski microscopy. These small pits were also associated with macroscopic damage features resulting from threshold damage testing.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
79.20.Ds Laser-beam impact phenomena
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

AlGaAs graded index lens for integrated optics

I. Yoshida and S. M. Bedair

Appl. Phys. Lett. 52, 2208 (1988); http://dx.doi.org/10.1063/1.99534 (3 pages)

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We propose a new approach for two‐dimensional graded index lenses, based on the one‐dimensional compositional grading in III‐V compounds ternary alloys. Compositional grading is achieved by the direct writing of these alloys, using the laser‐assisted chemical vapor deposition technique. The desired compositional grading and the corresponding variations in the refractive index are achieved by changing the mole fraction of the reactants in the gas phase while scanning the laser beam. An AlGaAs graded index lens structure has been demonstrated for the first time. This III‐V compound graded index lens can have potential applications in the field of integrated optics.
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42.82.-m Integrated optics
42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors

Femtosecond ultraviolet pulse generation in β‐BaB2O4

D. C. Edelstein, E. S. Wachman, L. K. Cheng, W. R. Bosenberg, and C. L. Tang

Appl. Phys. Lett. 52, 2211 (1988); http://dx.doi.org/10.1063/1.99767 (3 pages) | Cited 33 times

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Intracavity doubling in β‐BaB2 O4 (BBO) of femtosecond pulses into the ultraviolet with high efficiency is reported. Pulse widths down to 43 fs at a 108 Hz repetition rate and outputs as high as 20 mW per arm of the femtosecond laser on a continuous‐wave basis can be achieved. The ultraviolet pulse widths were determined through detailed cross‐correlation measurements based on sum‐frequency mixing to 210 nm in ultrathin BBO crystals.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.-e Optical properties of bulk materials and thin films

Efficient narrow‐band direct modulation of semiconductor injection lasers at millimeter wave frequencies of 100 GHz and beyond

K. Y. Lau

Appl. Phys. Lett. 52, 2214 (1988); http://dx.doi.org/10.1063/1.99535 (3 pages) | Cited 21 times

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It has been demonstrated both theoretically and experimentally that it is possible to mode lock semiconductor lasers at millimeter wave frequencies approaching and beyond 100 GHz. The mode‐locked output usually takes the form of sinusoidal modulation, and can be regarded for practical purposes as a highly efficient means of directly modulating an optical carrier in a narrow band at millimeter wave frequencies. In active mode locking, the external signal efficiently creates the optical modulation, while in passive mode locking a small external signal imposes its information on the optical carrier by injection locking the passive mode‐locked output. Experimentally, we have demonstrated passive mode locking at 70 GHz using a tandem contact GaAs laser.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes

Real‐time technique for the characterization of tunable single‐frequency lasers

E. M. Strzelecki, D. A. Cohen, S. W. Corzine, J. R. Karin, and L. A. Coldren

Appl. Phys. Lett. 52, 2217 (1988); http://dx.doi.org/10.1063/1.99536 (3 pages)

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An all‐fiber Mach–Zehnder interferometric system has been developed for characterization of tunable semiconductor lasers. The tuning rate, range, and linearity of directly frequency‐modulated lasers as well as laser linewidth are measured using the same system. To investigate the features of the system and demonstrate its usefulness, 1.3 μm coupled‐cavity lasers, tunable with constant amplitude, were characterized. The effects of optical feedback on laser parameters have also been investigated.
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42.60.Fc Modulation, tuning, and mode locking
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Ultrahigh power 38 W continuous‐wave monolithic laser diode arrays

M. Sakamoto, D. F. Welch, G. L. Harnagel, W. Streifer, H. Kung, and D. R. Scifres

Appl. Phys. Lett. 52, 2220 (1988); http://dx.doi.org/10.1063/1.99537 (2 pages) | Cited 5 times

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Continuous‐wave output power levels of 38 W from one facet have been obtained from a 1 cm monolithic AlGaAs laser array with a 2 mm total active aperture width. One of the diodes has been operated under constant current conditions (initial output power of 5 W) at room temperature for over 1100 h.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

Diffuse discharge interruption induced by excimer lasers in a pure N2 gas

Teruo Sasagawa, Akihiro Kawahara, and Minoru Obara

Appl. Phys. Lett. 52, 2222 (1988); http://dx.doi.org/10.1063/1.99538 (3 pages)

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We observed the complete discharge opening by ArF (193 nm) or KrF (248 nm) laser irradiation in pure N2 gas of a few Torr, using a discharge tube with a pair of cylindrical electrodes. With an ArF laser fluence of 27 mJ/cm2(10 ns FWHM: full width at half‐maximum) and at a N2 pressure of 1.0 Torr, a discharge current of 1.1 mA(0.156 mA/cm2) was interrupted completely, and the observed maximum current decay rate was 770 A/s at a sustaining discharge current of 0.75 mA. The discharge interruption depended on the laser wavelength. The discharge current over 0.27 mA could not be interrupted by a KrF laser irradiation of 27 mJ/cm2 (20 ns FWHM). The discharge current was not interrupted at all by XeF (351 nm) laser irradiation. Moreover, the discharge interruption strongly depended on the laser fluence, total pressure, and discharge current. Finally, we addressed the kinetic processes relevant to the discharge interruption in pure N2 ArF or KrF laser irradiation.
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52.75.Kq Plasma switches (e.g., spark gaps)
52.80.Tn Other gas discharges
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)

Light emission from CH and H sputtered from hydrogen‐implanted graphite

A. Klekamp, W. Möller, and K. J. Snowdon

Appl. Phys. Lett. 52, 2225 (1988); http://dx.doi.org/10.1063/1.99539 (2 pages) | Cited 3 times

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Characteristic spectra of light emission from CH molecules and hydrogen atoms sputtered from hydrogen‐implanted graphite are observed. The relative intensities from both species vary with the implanted fluence. The CH yield remains constant while the Hα yield increases. This is consistent with two binding states of implanted hydrogen in graphite.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.72.U- Doping and impurity implantation
32.30.Jc Visible and ultraviolet spectra
33.20.Kf Visible spectra

Solid phase recrystallization of implanted III‐V semiconductors under uniaxial stress

C. Licoppe, H. Savary, and M. Allovon

Appl. Phys. Lett. 52, 2227 (1988); http://dx.doi.org/10.1063/1.99540 (3 pages) | Cited 1 time

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The effect of mechanical stress on solid phase epitaxial recrystallization of implanted amorphous III‐V semiconductor layers is studied for the first time. A dual approach is used, involving either direct application of uniaxial stress on whole GaAs samples or the use of strained InGaAs layers deposited on InP substrates with indium composition as a stress control parameter. Observations show that with high applied stresses up to a few kilobars recrystallization kinetics remain unaltered. While homogeneous coherent strain does not bear any influence on interface roughness during regrowth, inhomogeneous strains due to defects greatly enhance the growth front roughness. This last result is interpreted in terms of defects acting as generating sources of additional defects during recrystallization.
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81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.40.Lm Deformation, plasticity, and creep
81.15.Np Solid phase epitaxy; growth from solid phases

Selective amplification of self‐resistively heated laser‐direct‐written tungsten lines

O. Gottsleben and M. Stuke

Appl. Phys. Lett. 52, 2230 (1988); http://dx.doi.org/10.1063/1.99768 (3 pages) | Cited 11 times

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Laser‐direct‐write pyrolytic deposition of tungsten at 514.5 nm, out of the WF6 /H2 reduction system, was carried out on Al2O3 substrates between sputtered‐on gold contact pads. Heat, generated by pulsed current sent through the laser‐induced microdeposit, is used to amplify the microstructure by a conventional, however well localized, chemical vapor deposition process. In addition to tungsten, other more volatile materials can be deposited for amplification.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Bx Metals, semimetals, and alloys

Scanning tunneling and atomic force microscopy combined

P. J. Bryant, R. G. Miller, and R. Yang

Appl. Phys. Lett. 52, 2233 (1988); http://dx.doi.org/10.1063/1.99541 (3 pages) | Cited 12 times

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The technique described here provides scanning tunneling microscopy (STM) and atomic force microscopy (AFM) in one instrument. Both STM and AFM operations are accomplished by the same device applied to the same sample area. The same metallic probe interacts with the sample in both modes of operation. Switching from STM to AFM can occur automatically or on command. Images can be recorded separately or in several combined modes and directly compared. Electronic and geometric contributions are identifiable in the separate and combined images. Conductors, semiconductors, and insulators may be investigated. Representative images of each are shown.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
73.20.At Surface states, band structure, electron density of states
68.35.B- Structure of clean surfaces (and surface reconstruction)
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Room‐temperature copper metallization for ultralarge‐scale integrated circuits by a low kinetic‐energy particle process

T. Ohmi, T. Saito, T. Shibata, and T. Nitta

Appl. Phys. Lett. 52, 2236 (1988); http://dx.doi.org/10.1063/1.99542 (3 pages) | Cited 24 times

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Copper films were epitaxially grown on (100)Si substrates at room temperatures utilizing low kinetic‐energy particle bombardment of growing copper film surfaces. The crystallographic structure of the film, such as (100) or (111) orientation, was selected by controlling the energy of incident particles. Low‐temperature, damage‐free substrate surface cleaning has also been realized by the low kinetic‐energy particle process, which has made it possible to form ideal metal‐semiconductor contacts without employing any alloying heat cycles.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Cd Deposition by sputtering
73.40.Ns Metal-nonmetal contacts
85.40.Ls Metallization, contacts, interconnects; device isolation

n‐Si/p‐Si1−xGex/n‐Si double‐heterojunction bipolar transistors

Dan‐Xia Xu, Guang‐Di Shen, M. Willander, Wei‐Xin Ni, and G. V. Hansson

Appl. Phys. Lett. 52, 2239 (1988); http://dx.doi.org/10.1063/1.99543 (3 pages) | Cited 20 times

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Two different structures of n‐Si/p‐Si1−xGex/n‐Si double‐heterojunction bipolar transistors have been fabricated by molecular beam epitaxy. A common emitter current gain β of about 15 was demonstrated in one kind of structure and the β‐IC curve has been investigated. In the other structure, a novel multistep collector current IC vs collector‐emitter voltage VCE characteristic together with a strong negative resistance behavior was observed at room temperature. In this letter the basic experiments are described; a comparison and a discussion of the two kinds of devices are presented.
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85.30.Pq Bipolar transistors

Selective growth condition in disilane gas source silicon molecular beam epitaxy

Hiroyuki Hirayama, Toru Tatsumi, and Naoaki Aizaki

Appl. Phys. Lett. 52, 2242 (1988); http://dx.doi.org/10.1063/1.99654 (2 pages) | Cited 38 times

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Selective epitaxial growth condition in the disilane gas source silicon molecular beam epitaxy was studied as functions of the substrate temperature and the growth rate. At lower substrate temperature or at lower silicon growth rate, perfect selectivity was attained. The selectivity dependence on the temperature and that on the growth rate indicate that the control of the disilane molecule’s dissociation on the SiO2 surface is important for selective growth.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Influence of rapid thermal annealing temperature on the electrical properties of Be‐implanted GaAs p‐n junctions

T. J. de Lyon, H. C. Casey, H. Z. Massoud, M. L. Timmons, J. A. Hutchby, and H. B. Dietrich

Appl. Phys. Lett. 52, 2244 (1988); http://dx.doi.org/10.1063/1.99544 (3 pages) | Cited 3 times

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Planar, Be‐implanted p‐n junctions were fabricated in GaAs with rapid thermal annealing (RTA). Five second isochronal anneals over a temperature range of 600–1000 °C were studied with secondary ion mass spectrometry (SIMS), sheet resistance measurements, and variable diameter p‐n junctions. Sheet resistance measurements indicate that a minimum RTA temperature of 600 °C is necessary for electrical activation of the implanted Be. SIMS analysis indicates that significant outdiffusion and surface evaporation of Be occur at all RTA temperatures in this range, while indiffusion of Be is insignificant for concentrations below 1×1018 cm−3. Forward bias current in diodes ranging in diameter from 10 to 1000 μm is dominated by surface recombination, rather than bulk space‐charge recombination, over the entire 600–1000 °C temperature range. The magnitude of the surface recombination current is insensitive to the RTA temperature, which suggests that 600 °C RTA should be sufficient for the formation of satisfactory p‐n junctions.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Extreme nonequilibrium electron transport in heterojunction bipolar transistors

K. Berthold, A. F. J. Levi, J. Walker, and R. J. Malik

Appl. Phys. Lett. 52, 2247 (1988); http://dx.doi.org/10.1063/1.99545 (3 pages) | Cited 15 times

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We use hot‐electron spectroscopy to demonstrate the existence of extreme nonequilibrium electron transport in the base of n‐p‐n heterojunction bipolar transistors. In the device, electrons are tunnel injected into a thin (∼300 Å wide), degenerately doped, p‐type GaAs base.
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85.30.Pq Bipolar transistors
73.61.Ey III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.-h Electronic transport phenomena in thin films

GaAs/AlAs double‐barrier resonant tunneling structure on Si with large peak to valley ratio at room temperature

S. C. Kan, H. Morkoç, and A. Yariv

Appl. Phys. Lett. 52, 2250 (1988); http://dx.doi.org/10.1063/1.99546 (2 pages) | Cited 7 times

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We have successfully grown GaAs/AlAs double‐barrier resonant tunneling structures on Si substrates by molecular beam epitaxy. At room temperature, a high peak to valley current ratio of 2.9 was observed. At 77 K, the peak to valley current ratio increased to 12.5. We attribute the excellent results to the smooth interfaces and low defect concentrations in GaAs on Si. Only a small deviation in current‐voltage characteristics over the wafer was observed indicating a good uniformity of high crystalline quality.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Probing of basal planes of MoS2 by scanning tunneling microscopy

Dror Sarid, Tammy D. Henson, Neal R. Armstrong, and L. Stephen Bell

Appl. Phys. Lett. 52, 2252 (1988); http://dx.doi.org/10.1063/1.99769 (3 pages) | Cited 7 times

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Atomically resolved images of MoS2 have been obtained using scanning tunneling microscopy with both positively and negatively biased samples yielding the hexagonal symmetry of the surface of the crystal. Also measured were curves of tunneling current as a function of bias voltage, from which the density of states of the valence and conduction bands can be inferred.
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73.20.At Surface states, band structure, electron density of states
73.20.Hb Impurity and defect levels; energy states of adsorbed species
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Effects of heavy impurity doping on electron injection in p+‐n GaAs diodes

M. E. Klausmeier‐Brown, M. S. Lundstrom, M. R. Melloch, and S. P. Tobin

Appl. Phys. Lett. 52, 2255 (1988); http://dx.doi.org/10.1063/1.99529 (3 pages) | Cited 12 times

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Measurements of electron injection currents in p+‐n diodes are presented for a range of p‐type dopant concentrations. A successive etch technique was used to characterize the electron injection current in terms of the product (noDn). Measurements are presented for Zn‐doped GaAs solar cells with p‐layer hole concentrations in the range 6.3×1017−1.3×1019 cm−3. The results demonstrate that so‐called band‐gap narrowing effects substantially increase the injected electron current in heavily doped p‐type GaAs. These heavy doping effects must be accounted for in the modeling and design of GaAs solar cells and heterostructure bipolar transistors.
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85.30.Kk Junction diodes
84.60.Jt Photoelectric conversion
85.30.Pq Bipolar transistors
61.72.U- Doping and impurity implantation

Deep states and misfit dislocations in indium‐doped GaAs layers grown by molecular beam epitaxy

D. E. Ioannou, Y. J. Huang, and A. A. Iliadis

Appl. Phys. Lett. 52, 2258 (1988); http://dx.doi.org/10.1063/1.99530 (3 pages) | Cited 6 times

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We have studied the effects of adding small amounts of indium (0.6 at. %) in GaAs layers grown by molecular beam epitaxy on GaAs substrates. Photoluminescence spectra showed that epilayers of high crystal quality were obtained, and electron beam induced current microscopy revealed a number of misfit dislocations near the interface and a dislocation‐free zone near the top surface. We observed several well known deep traps in the dislocation‐free zone, albeit at much lower concentrations in comparison to indium‐free, otherwise identical epilayers. We failed to observe any traps in the misfit dislocation zone. If, as is widely held, we assume that these traps are due to point defects and their complexes, a possible explanation of the absence of traps in the dislocation zone is that the traps provide the point defects necessary for the creation and climb of the misfit dislocations.
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71.55.Eq III-V semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.U- Doping and impurity implantation
78.55.Et II-VI semiconductors

Fabrication of multifilamentary Y‐Ba‐Cu‐O oxide superconductors

H. Sekine, K. Inoue, H. Maeda, K. Numata, K. Mori, and H. Yamamoto

Appl. Phys. Lett. 52, 2261 (1988); http://dx.doi.org/10.1063/1.99770 (2 pages) | Cited 8 times

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Workability of Y‐Ba‐Cu‐O composite wires with a Ag sheath has been studied and multifilamentary Y‐Ba‐Cu‐O superconductors with a Ag matrix have been successfully fabricated. Observations of the wires with a scanning electron microscope reveal that as the areal reduction ratio R increases, the average Y‐Ba‐Cu‐O grain size decreases. The study on the workability of the composite wires reveals that composite wires consisting of the Y‐Ba‐Cu‐O powder and a Ag matrix can be rolled or drawn to any extent by a cold‐work process with intermediate annealings at 150 °C for R=∼10. Based on this study, we have succeeded in fabricating a 252 filament Y‐Ba‐Cu‐O wire which shows a Tc (onset) of ∼95 K.
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74.70.-b Superconducting materials other than cuprates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.05.Mh Cermets, ceramic and refractory composites

High Tc YBa2Cu3O7−x thin films on Si substrates by dc magnetron sputtering from a stoichiometric oxide target

W. Y. Lee, J. Salem, V. Lee, T. Huang, R. Savoy, V. Deline, and J. Duran

Appl. Phys. Lett. 52, 2263 (1988); http://dx.doi.org/10.1063/1.99771 (3 pages) | Cited 34 times

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Thin films of YBa2Cu3O7−x were deposited on Si substrates at 600–700 °C by dc magnetron sputtering from a stoichiometric oxide target. Resistivity measurement results indicate that these films are superconducting with a zero resistance Tc as high as 76 K, without further high‐temperature post‐annealing treatments. These films give both core and valence‐band x‐ray photoemission, and x‐ray diffraction spectra similar to those for superconducting films prepared with a high‐temperature post‐annealing step. No significant diffusion of Si from the substrate into the film was detected for the films deposited at 650 °C or lower, according to depth profiles obtained using secondary ion mass spectrometry.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
81.15.Cd Deposition by sputtering

Anomalous rf magnetoresistance in copper at 4 K

J. T. Rogers, S. De Panfilis, A. C. Melissinos, B. E. Moskowitz, Y. K. Semertzidis, W. U. Wuensch, H. J. Halama, A. G. Prodell, W. B. Fowler, and F. A. Nezrick

Appl. Phys. Lett. 52, 2266 (1988); http://dx.doi.org/10.1063/1.99509 (3 pages) | Cited 3 times

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We have measured the effect of a magnetic field on the surface resistance of polycrystalline Cu at f=1.2 GHz and at 4.4 K; under these conditions the surface resistance is well into the anomalous skin effect regime but has not reached its limiting value. We find that the transverse and longitudinal magnetoresistance are an order of magnitude smaller than the dc magnetoresistance and depend quadratically on the field. At low fields we observe a decrease in surface resistance with increasing field which can be interpreted as a size effect of the rf surface current, but is also typical of superconductors.
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72.15.Gd Galvanomagnetic and other magnetotransport effects
73.25.+i Surface conductivity and carrier phenomena
FREE

Comment on ‘‘Evidence for Si diffusion through epitaxial NiSi2 grown on Si(111)’’ [Appl. Phys. Lett. 50, 1257 (1987)]

F. M. d’Heurle and O. Thomas

Appl. Phys. Lett. 52, 2269 (1988); http://dx.doi.org/10.1063/1.99772 (1 page) | Cited 7 times

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Abstract Unavailable
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68.35.Fx Diffusion; interface formation
66.30.Fq Self-diffusion in metals, semimetals, and alloys
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
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