• Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue

27 Jun 1988

Volume 52, Issue 26, pp. 2203-2269

Page 2 of 2 Pages Previous Page | Jump to Page
FREE

Response to ‘‘Comment on ‘Evidence for Si diffusion through epitaxial NiSi2 grown on Si(111)’ ’’ [Appl. Phys. Lett. 52, 2269 (1988)]

V. Hinkel, L. Sorba, H. Haak, K. Horn, and W. Braun

Appl. Phys. Lett. 52, 2269 (1988); http://dx.doi.org/10.1063/1.99773 (1 page) | Cited 1 time

Full Text: | Download PDF

Abstract Unavailable
Show PACS
68.35.Fx Diffusion; interface formation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
66.30.Fq Self-diffusion in metals, semimetals, and alloys
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
Page 2 of 2 Pages Previous Page | Jump to Page
Close
Google Calendar
ADVERTISEMENT

close