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8 Feb 1988

Volume 52, Issue 6, pp. 417-515

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Dye laser frequency locking to the hyperfine structure (3S1/2, F=2−3P1/2, F=2) of sodium D1 line by using polarization spectroscopy

Jung Bog Kim, Hong Jin Kong, and Sang Soo Lee

Appl. Phys. Lett. 52, 417 (1988); http://dx.doi.org/10.1063/1.99428 (3 pages) | Cited 10 times

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The frequency of a single‐mode dye laser is locked to a hyperfine structure of the sodium D1 line without modulating the laser frequency. The frequency locking method uses the error signal from a dispersion curve generated from the polarization spectroscopic output. The servo loop provides a frequency fluctuation less than ±0.3 MHz for more than 30 min.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Mv Dye lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Improvement of the bulk laser damage threshold of potassium dihydrogen phosphate crystals by reducing the organic impurities in growth solution

Y. Nishida, A. Yokotani, T. Sasaki, K. Yoshida, T. Yamanaka, and C. Yamanaka

Appl. Phys. Lett. 52, 420 (1988); http://dx.doi.org/10.1063/1.99429 (2 pages) | Cited 11 times

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We obtained damage‐resistant crystals of potassium dihydrogen phosphate (KDP) by reducing organic impurities in the growth solution. To prevent organic impurity exuded from the wall of the growth vessel, Pyrex glass was used. The residual organic impurities, which mainly derived from KDP raw powder, were reduced by photochemical dissociation using a combination of ultraviolet light and an oxidant (hydrogen peroxide). The resultant total organic carbon of the solution was less than 0.1 ppm. The damage threshold of the crystals grown from this solution was always high (20–22 J/cm2), which is about three times higher than that of crystals grown by conventional methods.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
81.40.Tv Optical and dielectric properties related to treatment conditions

Surface‐emitting second‐harmonic generator for waveguide study

D. Vakhshoori, M. C. Wu, and S. Wang

Appl. Phys. Lett. 52, 422 (1988); http://dx.doi.org/10.1063/1.99430 (3 pages) | Cited 15 times

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A novel surface emission of coherently generated second‐harmonic wave is reported for the first time.The technique is used for the observation of the difference in propagation constant of the TE0 and TM0 mode of GaAs/AlGaAs waveguide cavity to a high degree of accuracy. In this technique the second‐harmonic signal propagates out from the top surface of the waveguide structure, converting the modal phase difference between TE0 and TM0 modes into intensity variation along the waveguide length. The second‐harmonic signal is easily observable by the naked eye, and the technique does not require wavelength tuning or mechanical movement for the measurement of birefringence.
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42.79.Gn Optical waveguides and couplers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Real‐time image subtraction with the use of wave polarization and phase conjugation

Yasuo Tomita, Ram Yahalom, and Amnon Yariv

Appl. Phys. Lett. 52, 425 (1988); http://dx.doi.org/10.1063/1.99431 (3 pages) | Cited 5 times

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We demonstrate, using a double‐phase conjugate mirror, image subtraction, addition, and intensity inversion by two orthogonally polarized image‐bearing phase conjugate waves.
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42.30.Va Image forming and processing
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.79.-e Optical elements, devices, and systems

Threshold voltage of charge storage in acoustic‐charge‐transport devices: Experiments and model

Bruce Schmukler and Michael J. Hoskins

Appl. Phys. Lett. 52, 428 (1988); http://dx.doi.org/10.1063/1.99432 (3 pages) | Cited 3 times

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This letter presents a simple theory to calculate the threshold voltage of charge storage in acoustic‐charge‐transport devices and experimental results that correlate well with the theory. It is found both experimentally and theoretically that the threshold voltage of charge storage increases with increasing surface acoustic wave power and nominal charge‐transport depth. The threshold voltage of charge storage is also shown to be relatively independent of the amount of charge stored and is shown to decrease with increasing negative bias on the charge‐storage electrode.
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72.50.+b Acoustoelectric effects
43.35.Pt Surface waves in solids and liquids
85.30.-z Semiconductor devices

Modulation of an intense beam by an external microwave source: Theory and simulation

J. Krall and Y. Y. Lau

Appl. Phys. Lett. 52, 431 (1988); http://dx.doi.org/10.1063/1.99433 (3 pages) | Cited 7 times

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A time‐dependent, fully electromagnetic particle code is used to simulate the current modulation in an intense relativistic electron beam by an external rf source. It is shown that the intense beam may serve as a power amplifier with good phase stability, as suggested in earlier experiments. Increase in beam bunching by the dc space charge is demonstrated with a simple analytical model.
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41.75.Ht Relativistic electron and positron beams
41.60.-m Radiation by moving charges
52.59.Px Hard X-ray sources
52.40.Mj Particle beam interactions in plasmas

Transmission electron microscopy study of the formation of epitaxial CoSi2/Si (111) by a room‐temperature codeposition technique

Cecile d’Anterroches, H. Nejat Yakupoglu, T. L. Lin, R. W. Fathauer, and P. J. Grunthaner

Appl. Phys. Lett. 52, 434 (1988); http://dx.doi.org/10.1063/1.99434 (3 pages) | Cited 20 times

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Co and Si have been codeposited on Si (111) substrates near room temperature in a stoichiometric 1:2 ratio in a molecular beam epitaxy system. Annealing of these deposits yields high‐quality single‐crystal CoSi2 layers. Transmission electron microscopy has been used to examine as‐deposited layers and layers annealed at 300, 500, and 600 °C. Single‐crystal epitaxial grains of CoSi2 embedded in a matrix of amorphous Co/Si are observed in as‐deposited samples, while the layer is predominantly single‐crystal, inhomogeneously strained CoSi2 at 300 °C. At 600 °C, a homogeneously strained single‐crystal layer with a high density of pinholes is observed. In contrast to other solid phase epitaxy techniques used to grow CoSi2 on Si (111), no intermediate silicide phases are observed prior to the formation of CoSi2.
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81.15.Np Solid phase epitaxy; growth from solid phases

High rate synthesis of diamond by dc plasma jet chemical vapor deposition

Kazuaki Kurihara, Kenichi Sasaki, Motonobu Kawarada, and Nagaaki Koshino

Appl. Phys. Lett. 52, 437 (1988); http://dx.doi.org/10.1063/1.99435 (2 pages) | Cited 139 times

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This letter describes the first successful attempt at synthesizing diamond by chemical vapor deposition with the use of a dc plasma jet. A plasma jet, formed by the dc arc discharge of CH4 diluted with H2, was sprayed onto a water‐cooled substrate. The growth rate of the diamond film was 80 μm/h. The crystallinity measures well in terms of x‐ray diffraction and Raman spectroscopy. The quenching effect of the thermal plasma is discussed in relation to the high growth rate obtained.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Impurity‐stimulated crystallization and diffusion in amorphous silicon

E. Nygren, A. P. Pogany, K. T. Short, J. S. Williams, R. G. Elliman, and J. M. Poate

Appl. Phys. Lett. 52, 439 (1988); http://dx.doi.org/10.1063/1.99436 (3 pages) | Cited 41 times

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An amorphous‐to‐polycrystalline silicon transformation and concomitant In redistribution have been observed in In‐implanted silicon at temperatures well below those at which solid phase epitaxial growth or random crystallization is observed in undoped films. The process is extremely rapid and exhibits a strong dependence on both In concentration and temperature. It is proposed that the In redistribution and accompanying silicon crystallization are mediated by molten, In‐rich precipitates in amorphous silicon.
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64.70.K- Solid-solid transitions
66.30.J- Diffusion of impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Measurement of thermal diffusivity for polymer film by flash radiometry

Naoto Tsutsumi and Tsuyoshi Kiyotsukuri

Appl. Phys. Lett. 52, 442 (1988); http://dx.doi.org/10.1063/1.99437 (3 pages) | Cited 12 times

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A new method to determine the thermal diffusivity of polymer film by flash radiometry is presented. The transient infrared radiation from the sample surface was measured after the sample film was heated by a short‐duration pulsed light. The thermal diffusivity was determined by fitting the transient infrared signal to the theoretical curve of a one‐dimensional heat diffusion model. The transient infrared signal of polymethylmethacrylate (PMMA) film could be well fitted by the theoretical curve using appropriate thermal diffusivity in the wide temperature range between 100 K and near the softening point of PMMA. The temperature dependence of thermal diffusivity of PMMA film showed that the thermal diffusivity sensitively reflects the molecular motion of polymer chain.
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66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
68.60.Wm Other nonelectronic physical properties
44.10.+i Heat conduction

Electron‐spin‐resonance study of defects in plasma‐enhanced chemical vapor deposited silicon nitride

D. Jousse, J. Kanicki, D. T. Krick, and P. M. Lenahan

Appl. Phys. Lett. 52, 445 (1988); http://dx.doi.org/10.1063/1.99438 (3 pages) | Cited 31 times

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Silicon nitride films with low defect densities can be prepared by plasma‐enhanced chemical vapor deposition with ammonia‐to‐silane ratios adjusted to obtain N‐rich materials. An electron‐spin‐resonance signal with g value close to 2.002 is reported for such materials, and the defect is identified as a Si atom coordinated to three N atoms as observed earlier in high‐temperature chemical vapor deposited silicon nitride. Densities below 1016 cm−3 are measured for substrate temperatures above 350 °C for the first time. The distribution of defects is uniform through the film thickness. A surface defect density of 1012 cm−2 has also been found in films deposited at 250 °C.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
76.30.Lh Other ions and impurities
68.35.Dv Composition, segregation; defects and impurities

Phase separation kinetics of metastable, highly supersaturated Sn‐Bi single crystals

H. J. Fecht and M. C. Tringides

Appl. Phys. Lett. 52, 448 (1988); http://dx.doi.org/10.1063/1.99439 (3 pages)

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We have utilized differential scanning calorimetry to study decomposition of a large number (≊105) of independent, metastable, highly supersaturated Sn63Bi37 single crystals. Three different growth regimes are observed: first, t1/2 diffusion‐controlled growth, followed by a t1/3 regime attributed to Lifshitz–Slyozov coarsening [J. Phys. Chem. Solids 19, 35 (1961)] extended to the case of finite volume fraction, and eventually ‘‘freezing’’ of the growth possibly because of defects. The activation energy of the t1/3 growth is determined to be 0.54±0.05 eV.
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64.70.K- Solid-solid transitions
68.35.Fx Diffusion; interface formation
81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations

Effects of filament and reactor wall materials in low‐pressure chemical vapor deposition synthesis of diamond

B. Singh, Y. Arie, A. W. Levine, and O. R. Mesker

Appl. Phys. Lett. 52, 451 (1988); http://dx.doi.org/10.1063/1.99440 (2 pages) | Cited 27 times

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Well‐faceted diamond crystals and polycrystalline films have been produced by low‐pressure, hot‐filament‐activated, chemical vapor deposition with the use of methane/ hydrogen gas. The effects on growth and morphology of varying filament and reactor tube materials as well as tube diameter are reported. Tungsten and tantalum filaments, operated under similar conditions, produced diamonds at essentially the same growth rates (typically ∼2 μm/h) and with similar crystallographic properties. Platinum filaments produced only graphitic deposits. Diamond growth and morphology appeared not to be influenced by changing the reactor wall material from fused quartz to Al2O3 or Pyrex or by varying the tube diameter.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Time‐dependent approach to double‐barrier quantum well oscillators

H. C. Liu

Appl. Phys. Lett. 52, 453 (1988); http://dx.doi.org/10.1063/1.99441 (3 pages) | Cited 14 times

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Microwave and millimeter‐wave oscillation frequencies and efficiencies of heterojunction double‐barrier resonant‐tunneling structures are investigated theoretically from a time‐dependent point of view. Calculations for two specific devices show that the oscillation characteristics depend strongly on the device parameters, i.e., barrier heights and widths and the well width. Results also show that oscillations in frequencies above limits predicted by a transit tunneling time consideration are less efficient, but not vanishing.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling

Anisotropy dependence of the focused field radiated into a piezoelectric half‐space by an interdigital transducer

Y. W. Zhang and M. Planat

Appl. Phys. Lett. 52, 456 (1988); http://dx.doi.org/10.1063/1.99442 (3 pages) | Cited 1 time

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Bulk waves radiated into an anisotropic half‐space by an interdigital transducer are studied theoretically. The mechanical displacements of excited waves are obtained by asymptotic evaluation of an integral whose singularities give rise to both Rayleigh surface waves and angularly focused bulk waves. By applying the analysis to singly rotated Y cuts of quartz with propagation normal to the x axis, it is shown that the orientation and width of the main lobe are very sensitive to frequency and crystal orientation.
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43.38.Ar Transducing principles, materials, and structures: general
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.35.Pt Surface waves in solids and liquids
62.30.+d Mechanical and elastic waves; vibrations

Effects of fluorine ion implantation on metal‐oxide‐semiconductor devices of silicon‐on‐sapphire

Shigeaki Zaima, Yukio Yasuda, Masahiro Ito, and Tetsuro Nakamura

Appl. Phys. Lett. 52, 459 (1988); http://dx.doi.org/10.1063/1.99443 (3 pages) | Cited 1 time

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Effects of fluorine ion implantation on electrical characteristics of metal‐oxide‐semiconductor (MOS) devices on silicon‐on‐sapphire have been investigated. The fluorine implantation generates deep acceptor levels, the nature of which is significantly affected by the sequence of the implantation and gate oxidation in device fabrication process steps. It was found that drain leakage current of fluorine‐implanted MOS transistors can be reduced to about 0.1 times compared with unimplanted devices without degrading the basic electrical characteristics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.20.Hb Impurity and defect levels; energy states of adsorbed species
85.30.Tv Field effect devices

Investigations of the quantum photovoltaic effect in InAs‐GaSb semiconductor superlattices

J. Bleuse, P. Voisin, M. Voos, H. Munekata, L. L. Chang, and L. Esaki

Appl. Phys. Lett. 52, 462 (1988); http://dx.doi.org/10.1063/1.99444 (3 pages) | Cited 4 times

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We report the observation in InAs‐GaSb semiconductor superlattices of a photovoltaic effect that has a quantum origin, as it arises from the spatial separation of the electron and hole ground‐state wave functions in these type II superlattices. The results are consistent with the simplest theoretical predictions, except for the voltage sign, which evidences a depopulation of the surface layer.
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73.50.Pz Photoconduction and photovoltaic effects
73.61.Ey III-V semiconductors

Photoluminescence studies of silicon‐on‐insulator substrates formed by oxygen implantation

S. T. Davey, J. R. Davis, K. J. Reeson, and P. L. F. Hemment

Appl. Phys. Lett. 52, 465 (1988); http://dx.doi.org/10.1063/1.99445 (3 pages) | Cited 8 times

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Photoluminescence spectroscopy has been used to study silicon‐on‐insulator substrates formed by oxygen implantation. Samples having post‐implantation anneals at 1200 and 1300 °C were investigated. The dislocation‐related D‐line emission is observed in all the samples, but with lower intensity in the samples annealed at the higher temperature, indicative of their superior crystal quality. Group V contaminants in some samples were identified from their excitonic emission. Additional low‐temperature anneals at 450 and 750 °C significantly increased the intensity of the excitonic emission from the samples, and in addition, emission from thermal donors was also observed.
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78.55.Hx Other solid inorganic materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Materials choice for ballistic transport: Group velocities and mean free paths calculated from realistic band structures

Srinivasan Krishnamurthy, A. Sher, and A.‐B. Chen

Appl. Phys. Lett. 52, 468 (1988); http://dx.doi.org/10.1063/1.99446 (3 pages) | Cited 10 times

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We studied the effects of realistic band structures on the group velocities and mean free paths due to scattering by longitudinal optical phonons, ionized impurities, alloy disorder, and other electrons on limiting ballistic transport in GaAs, InAs, InP, GaInAs, GaAlAs, and InAsP alloys. The upper cutoff frequency and fraction of ballistic electrons transporting through devices made from these materials are calculated. For thick devices (≥500 Å), GaInAs alloys have distinct advantages. However, for thin devices (≊100 Å), the cutoff frequencies range around 15 THz, and none of the materials have an appreciably higher ballistic fraction than GaAs.
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73.50.Bk General theory, scattering mechanisms
85.30.-z Semiconductor devices
73.50.Fq High-field and nonlinear effects
73.61.Ey III-V semiconductors

Anomalous co‐diffusion effects of germanium on group III and V dopants in silicon

J. R. Pfiester and P. B. Griffin

Appl. Phys. Lett. 52, 471 (1988); http://dx.doi.org/10.1063/1.99447 (3 pages) | Cited 17 times

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Anomalous diffusion effects are observed when germanium is co‐diffused with phosphorus, boron, or arsenic in inert or oxidizing ambients. The germanium, an uncharged column IV dopant with a covalent radius close to that of silicon, appears to alter the point defect population in the silicon lattice. During oxidation, the usual oxidation enhanced diffusion is not observed when Ge is present in the lattice. The anomalous tail diffusion of high‐concentration phosphorus is also reduced when Ge is present.
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66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.uf Ge and Si
81.65.-b Surface treatments

Evidence for photon recycling in InP

S. D. Lester, T. S. Kim, and B. G. Streetman

Appl. Phys. Lett. 52, 474 (1988); http://dx.doi.org/10.1063/1.99448 (3 pages) | Cited 15 times

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An examination of low‐temperature photoluminescence from chemically thinned InP illustrates the effect of multiple absorption and reemission of photons in bulk liquid‐encapsulated Czochralski grown material. Luminescence spectra show that such photon recycling dramatically increases the nonequilibrium carrier density in the material and causes excess carrier distribution to penetrate tens of micrometers beneath the sample surface, an order of magnitude more than a diffusion length. Nonequilibrium carriers also penetrate deeper with increasing excitation levels as a consequence of more efficient radiative recombination. Although these effects have not been widely recognized, they have important consequences in the interpretation of luminescence spectra and the design of electronic and optical devices based on InP that are sensitive to minority‐carrier diffusion lengths.
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78.55.Cr III-V semiconductors
85.60.-q Optoelectronic devices
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Optical and electronic properties of an amorphous silicon‐germanium alloy with a 1.28 eV optical gap

J. Kolodzey, R. Schwarz, S. Aljishi, V. Chu, D.‐S. Shen, P. M. Fauchet, and S. Wagner

Appl. Phys. Lett. 52, 477 (1988); http://dx.doi.org/10.1063/1.99449 (3 pages) | Cited 5 times

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We report the deposition and comprehensive evaluation of a hydrogenated, fluorinated amorphous silicon‐germanium alloy with an optical gap of 1.28 eV. This low‐gap alloy of the a‐Si, Ge system possesses a small midgap defect density (6.5×1016 cm−3), and useful electron (σph/σd=23) and hole (LD=0.13 μm) transport properties. The alloy was grown by radio‐frequency plasma‐enhanced decomposition of SiF4, GeF4, and H2 in a reactor built to ultrahigh‐vacuum specifications.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.50.Pz Photoconduction and photovoltaic effects

Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAs

C. A. Larsen, N. I. Buchan, and G. B. Stringfellow

Appl. Phys. Lett. 52, 480 (1988); http://dx.doi.org/10.1063/1.99450 (3 pages) | Cited 54 times

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The decomposition mechanisms of AsH3, trimethylgallium (TMGa), and mixtures of the two have been studied in an atmospheric‐pressure flow system with the use of D2 to label the reaction products which are analyzed in a time‐of‐flight mass spectrometer. AsH3 decomposes entirely heterogeneously to give H2. TMGa decomposes by a series of gas‐phase steps, involving methyl radicals and D atoms to produce CH3D, CH4, C2H6, and HD. TMGa decomposition is accelerated by the presence of AsH3. When the two are mixed, as in the organometallic vapor phase epitaxial growth of GaAs, both compounds decompose in concert to produce only CH4. A likely model is that of a Lewis acid‐base adduct that forms and subsequently eliminates CH4.
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82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Strains in Si‐on‐SiO2 structures formed by oxygen implantation: Raman scattering characterization

D. J. Olego, H. Baumgart, and G. K. Celler

Appl. Phys. Lett. 52, 483 (1988); http://dx.doi.org/10.1063/1.99451 (3 pages) | Cited 19 times

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Low‐temperature Raman scattering measurements were carried out to characterize Si‐on‐SiO2 structures formed by oxygen implantation and subsequent furnace or lamp annealing. The experiments were conducted with 413.1 nm laser light to probe only the thin Si layers at the top of the structures. The Raman spectra of the furnace‐annealed samples are red shifted and broadened when compared with a virgin Si surface. The shifts and broadenings decrease with increasing annealing temperatures but they are still present in samples annealed above 1250 °C for 3 h. No shifts or broadenings affect the Raman peaks of the layers, which were lamp annealed at 1405 °C for half an hour. The red shifts indicate that the recrystallized Si layers are under tensile strains, whose origin is attributed to oxide precipitates. Quantitative estimates of the strains and associated stresses are obtained from the measured Raman shifts.
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68.60.Bs Mechanical and acoustical properties
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.30.Hv Other nonmetallic inorganics

Origin and reduction of interfacial boron spikes in silicon molecular beam epitaxy

S. S. Iyer, S. L. Delage, and G. J. Scilla

Appl. Phys. Lett. 52, 486 (1988); http://dx.doi.org/10.1063/1.99420 (3 pages) | Cited 16 times

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An interfacial boron spike is formed during the molecular beam epitaxial growth of Si. We show two possible sources for this unintentional spike. We have found that some boron contamination invariably occurs when silicon surfaces are exposed to air. A greater degree of contamination results when the sample is heated to temperatures greater than 800 °C, as required for creating an atomically clean surface prior to molecular beam epitaxial growth. A source of boron suboxides, internal to the ultrahigh‐vacuum system, was detected by residual gas analysis. While anneals at 1000 °C or greater result in almost complete activation of the B, we observe that for a cleaning regimen at 850 °C, less than 10% of the boron is active. Our results are consistent with the oxidation of the suboxides on oxygen‐contaminated surfaces and their subsequent reduction at higher temperatures by silicon, with the volatization of SiO. Subsequent incorporation is by indiffusion.
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68.35.Dv Composition, segregation; defects and impurities
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
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