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15 Feb 1988

Volume 52, Issue 7, pp. 519-594

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Flux penetration profiles in powdered DyBa2Cu3O7

M. Daeumling, J. Seuntjens, and D. C. Larbalestier

Appl. Phys. Lett. 52, 590 (1988); http://dx.doi.org/10.1063/1.99375 (2 pages) | Cited 18 times

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Flux penetration measurements on powdered specimens of DyBa2Cu3O7 have been performed by using Campbell’s [J. Phys., C 2, 1492 (1969)] method at 4.2 K in magnetic fields up to 7 T. There are three principal results of the measurements. The first is that although there is a small region of surface current, there is indeed a linear bulk flux profile. Thus there is a uniform bulk current flowing through the sample, and the Bean model is appropriate for these compounds. The second result is that the magnetic moment is independent of particle size (over the range 3–12 μm), even when the powders are single crystals. This implies that the currents are subdivided on a scale finer than the grain size. The third result is that Jc (4.2 K, 1–7 T) is very high, reaching 107 A/cm2.
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74.25.N- Response to electromagnetic fields
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents

Ultrafast optoelectronic ferromagnetic semiconductor CdCr2Se4 switch

Ardie D. Walser and R. R. Alfano

Appl. Phys. Lett. 52, 592 (1988); http://dx.doi.org/10.1063/1.99376 (3 pages) | Cited 4 times

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A new ultrafast optoelectronic switch that utilizes the ferromagnetic semiconductor CdCr2Se4 is demonstrated to have a scope‐limited sampled response time of approximately 90 ps.
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85.60.-q Optoelectronic devices
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
85.70.-w Magnetic devices
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
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