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22 Feb 1988

Volume 52, Issue 8, pp. 599-675

Page 1 of 2 Pages Next Page | Jump to Page

Temperature dependence of threshold current in GaAs/AlGaAs quantum well lasers

P. Blood, S. Colak, and A. I. Kucharska

Appl. Phys. Lett. 52, 599 (1988); http://dx.doi.org/10.1063/1.99647 (3 pages) | Cited 16 times

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We have calculated the threshold current and its temperature (T) dependence in the range 200–400 K for AlGaAs quantum well lasers with 25‐Å‐wide GaAs wells using a model which includes lifetime broadening of the transitions and broadening of the density of states function by fluctuations in the well width. The threshold current varies approximately linearly with T and the principal effect of broadening is to increase the threshold current causing a reduction in the fractional change of current with temperature. The apparent value of the parameter T0 is increased to ≊400 K, compared with ≊320 K without broadening. The calculations are compared with experimental data.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Enhanced efficiency in separation of Rb isotopes by light‐induced drift with the use of a diode laser with relaxation sidebands

A. D. Streater, J. Mooibroek, and J. P. Woerdman

Appl. Phys. Lett. 52, 602 (1988); http://dx.doi.org/10.1063/1.99377 (3 pages) | Cited 12 times

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An AlGaAs diode laser oscillating in a single Fabry–Perot mode with strong relaxation sidebands is observed to separate the two naturally occurring isotopes of rubidium by means of light‐induced drift at much lower powers than has been reported with a single‐mode ring dye laser. The sideband frequency displacement is approximately equal to the ground‐state hyperfine splitting, so that optical hyperfine pumping is largely eliminated.
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28.60.+s Isotope separation and enrichment
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

High‐frequency modulation of AlGaAs/GaAs lasers grown on Si substrate by molecular beam epitaxy

H. Z. Chen, J. Paslaski, A. Yariv, and H. Morkoç

Appl. Phys. Lett. 52, 605 (1988); http://dx.doi.org/10.1063/1.99378 (2 pages) | Cited 8 times

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We report on the frequency response of quantum well lasers on Si substrates grown by molecular beam epitaxy. Ridge waveguide lasers of 10 μm×380 μm having threshold currents as low as 40 mA were used in this study. Measurements were performed up to a frequency of 4.5 GHz with a resultant modulation corner frequency of 2.5 GHz when the laser was operated about 20% above the threshold.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Patterned quantum well semiconductor injection laser grown by molecular beam epitaxy

E. Kapon, J. P. Harbison, C. P. Yun, and N. G. Stoffel

Appl. Phys. Lett. 52, 607 (1988); http://dx.doi.org/10.1063/1.99379 (3 pages) | Cited 22 times

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A novel quantum well semiconductor laser structure is described. This patterned quantum well laser utilizes the thickness variations and nonplanarity exhibited by quantum wells grown on grooved substrates in order to achieve lateral carrier confinement and real index waveguiding. Index guided GaAs/AlGaAs patterned quantum well lasers with ∼1‐μm‐wide active layer stripes and threshold currents as low as 6 mA have been grown by molecular beam epitaxy. This patterned quantum well laser configuration is particularly attractive for fabricating quantum wire and quantum box semiconductor injection lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics

Elastic constants of, and Stonely waves in, molybdenum films measured by Brillouin scattering

J. A. Bell, R. Zanoni, C. T. Seaton, G. I. Stegeman, J. Makous, and C. M. Falco

Appl. Phys. Lett. 52, 610 (1988); http://dx.doi.org/10.1063/1.99380 (3 pages) | Cited 18 times

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The dispersion of Rayleigh, Stonely, and Sezawa acoustic waves guided by deposited thin molybdenum films has been used to evaluate selected elastic constants and film homogeneity. This work includes the first experimental observation of Stonely waves by Brillouin scattering.
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68.60.Bs Mechanical and acoustical properties
78.35.+c Brillouin and Rayleigh scattering; other light scattering
68.55.Nq Composition and phase identification

Flash‐lamp‐triggered high‐power thyratron‐type switch

G. Kirkman, W. Hartmann, and M. A. Gundersen

Appl. Phys. Lett. 52, 613 (1988); http://dx.doi.org/10.1063/1.99381 (3 pages) | Cited 20 times

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Extremely high cold cathode emission and a plasma current density that is much higher than commercial glow discharge hot cathode switches have been obtained in a flash‐triggered hollow cathode thyratron‐type switch that operates in a glow mode. The cold cathode emission is higher by several orders of magnitude than emission from thermionic cathodes in high‐power hydrogen thyratrons, without arc formation. Peak current >17 kA, dI/dt>3×1011 A/s, and power gain >1400 are observed. The switch has been successfully operated as a thyratron substitute in a commercial XeCl excimer laser. The work demonstrates a new approach to thyratron‐type switches, and a wide range of technologically useful physical processes that are poorly understood.
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52.75.Kq Plasma switches (e.g., spark gaps)
52.80.-s Electric discharges
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
52.80.Hc Glow; corona

Low‐temperature reactive ion etching and microwave plasma etching of silicon

Shinichi Tachi, Kazunori Tsujimoto, and Sadayuki Okudaira

Appl. Phys. Lett. 52, 616 (1988); http://dx.doi.org/10.1063/1.99382 (3 pages) | Cited 93 times

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A new low‐temperature reactive ion etching and microwave plasma etching method is described. Highly anisotropic silicon etching with extremely small width shifts has been performed with high selectivities of 30 for organic resist films. High etch rates of 500 and 1000 nm/min by reactive ion etching and microwave plasma etching, respectively, were achieved with a SF6 gas plasma at low wafer temperatures from −130 to −100 °C. It is concluded that lower temperatures during plasma treatment yield lower side etching and increase the dry etch resistance of organic masks.
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81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Surface structure change during solid phase epitaxial growth of an amorphous Si film deposited on Si (111)

Y. Shigeta

Appl. Phys. Lett. 52, 619 (1988); http://dx.doi.org/10.1063/1.99383 (3 pages) | Cited 7 times

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See Also: Erratum

Show Abstract
Some surface structure change of an amorphous Si film deposited on Si (111) during the solid phase epitaxy was observed by low‐energy electron diffraction (LEED). The LEED intensity profile shows the formation of 7×7 structure whenever a crystallized surface is constructed. The intensity increases with an increase of the annealing temperature Ta, where the increasing rate with Ta becomes small for 590<Ta<700 °C, and for 780<Ta<850 °C. It is discussed that there exists some process inhibiting the growth of the 7×7 structure regions in these two temperature ranges.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Np Solid phase epitaxy; growth from solid phases
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Thermal equilibrium process in undoped hydrogenated amorphous silicon and silicon‐carbon alloy films

Xixiang Xu, Akiharu Morimoto, Minoru Kumeda, and Tatsuo Shimizu

Appl. Phys. Lett. 52, 622 (1988); http://dx.doi.org/10.1063/1.99384 (3 pages) | Cited 13 times

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We find the thermally induced defects in undoped hydrogenated amorphous silicon carbon (a‐Si1−xCx@B:H) by electron spin resonance and conductivity measurements. The equilibrium temperature (Te) determined from the annealing temperature‐dependent density of dangling bonds after fast cooling decreases with increasing C content, from 190 °C for hydrogenated amorphous silicon to 150 °C for a‐Si0.82C0.18@B:H. Possible microscopic mechanisms for the observed thermally induced defects in a‐Si1−xCx@B:H alloys are discussed.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
76.30.Mi Color centers and other defects

Laser‐induced degradation of GaAs photoluminescence

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, and J. McInerney

Appl. Phys. Lett. 52, 625 (1988); http://dx.doi.org/10.1063/1.99385 (3 pages) | Cited 17 times

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We report experimental studies of laser‐induced degradation of surface photoluminescence efficiency in n‐GaAs, p‐GaAs, semi‐insulating Cr‐doped, and undoped liquid‐encapsulated Czochralski‐grown GaAs for excitation intensities ranging from ∼0.1 to ∼20 kW/cm2. The data suggest a contribution from optically induced defects in the bulk material. The time dependence of photoluminescence efficiency was fitted to a simple power‐law expression. A previously unreported fast decay of photoluminescence, occurring in 1–2 s immediately following the cleaving of a fresh surface, was observed in p‐ and n‐type samples.
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78.55.Cr III-V semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Model study of the local vibration center related to EL2 levels in GaAs

Xuefu Zhong, Desheng Jiang, Weikun Ge, and Chunying Song

Appl. Phys. Lett. 52, 628 (1988); http://dx.doi.org/10.1063/1.99386 (3 pages) | Cited 28 times

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A tentative explanation is given for a recently reported local vibrational mode induced infrared absorption which is related to EL2 centers in GaAs. Interstitial (or off‐center substitutional) oxygen is suggested to be responsible for these vibration modes. Taking lattice relaxation into account, a simple model based on the two‐center bond theory is proposed and evaluated. The adequacy of this model strongly implies a relationship of EL2 centers in the measured samples with oxygen.
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63.20.Pw Localized modes
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
71.55.Eq III-V semiconductors
61.72.jd Vacancies
61.72.jj Interstitials

15% efficiency (1 sun, air mass 1.5), large‐area, 1.93 eV AlxGa1−xAs (x=0.37) n‐p solar cell grown by metalorganic vapor phase epitaxy

B‐C. Chung, H. C. Hamaker, G. F. Virshup, and J. G. Werthen

Appl. Phys. Lett. 52, 631 (1988); http://dx.doi.org/10.1063/1.99387 (3 pages) | Cited 4 times

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1.93 eV AlxGa1−xAs (x=0.37) n‐p solar cells with areas of 4 cm2 have been fabricated by metalorganic vapor phase epitaxy. Under 1 sun, air mass 1.5, simulated conditions, the cell exhibiting a conversion efficiency as high as 15% is characterized by a short‐circuit current density of 12.0 mA/cm2, an open‐circuit voltage of 1.42 V, and a fill factor of 0.87. The realization of these high‐quality AlGaAs solar cells at a band gap of 1.93 eV implies the potential for other promising optoelectronic devices in the visible spectrum.
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84.60.Jt Photoelectric conversion
81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.50.Pz Photoconduction and photovoltaic effects

Deep level transient spectroscopy on single, isolated interface traps in field‐effect transistors

A. Karwath and M. Schulz

Appl. Phys. Lett. 52, 634 (1988); http://dx.doi.org/10.1063/1.99388 (3 pages) | Cited 8 times

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Electron emission from single, isolated traps is observed in stepped current transients of micrometer‐size metal oxide semiconductor field‐effect transistors. Deep level transient spectroscopy evaluation is performed by counting traps to estimate the average state density Dit ≊6 ×1010 eV−1 cm−2 close to the conduction‐band edge (Ec−Eit =20–250 meV). The capture coefficient (prefactor for activated emission) is determined to Bn =10−21 cm3 s−1 for these slow traps.
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85.30.Tv Field effect devices
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.20.At Surface states, band structure, electron density of states

Large optical nonlinearities in a GaAs/AlGaAs hetero n‐i‐p‐i structure

A. Kost, E. Garmire, A. Danner, and P. D. Dapkus

Appl. Phys. Lett. 52, 637 (1988); http://dx.doi.org/10.1063/1.99389 (3 pages) | Cited 34 times

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Light‐induced changes in the absorption of a multiple quantum well hetero n‐i‐p‐i structure at room temperature have been measured using a pump‐probe method. Changes in the absorption coefficient in the quantum wells of more than 2000 cm−1 have been observed with pump intensities as small as 375 mW/cm2. Corresponding changes in the index of refraction of ≊0.02 have been calculated.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Nondestructive technique for the detection of dislocations and stacking faults on silicon wafers

Bob Witowski, W. Lee Smith, and David L. Willenborg

Appl. Phys. Lett. 52, 640 (1988); http://dx.doi.org/10.1063/1.99390 (3 pages) | Cited 5 times

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We demonstrate the imaging of dislocations and stacking faults in silicon wafers in a noncontact, nondestructive fashion using laser based modulated optical reflectance. By comparison with conventional wet decoration etching, we show that the sensitivity of the modulated optical reflectance method can resolve the difference between two types of dislocations.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Nn Stacking faults and other planar or extended defects
81.70.-q Methods of materials testing and analysis
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Light‐induced defects in hydrogenated amorphous silicon alloys

Andrew Skumanich and Nabil M. Amer

Appl. Phys. Lett. 52, 643 (1988); http://dx.doi.org/10.1063/1.99391 (2 pages) | Cited 13 times

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The effect of light illumination on gap state absorption of hydrogenated amorphous silicon (a‐Si:H) alloys has been investigated using photothermal deflection spectroscopy. The alloys studied were the large gap materials a‐SiC:H and a‐SiO:H and the narrow gap a‐SiGe:H and a‐Ge:H. The results indicate a direct relationship between the gap energy and defect formation. As the gap opens, the number of metastable defects increases; whereas for the narrow gap materials, significantly fewer defects are observed. This behavior is consistent with the interpretation of defect formation by electron‐hole recombination.
Show PACS
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.20.Hb Impurity and defect levels; energy states of adsorbed species
78.66.-w Optical properties of specific thin films

Dose dependence of crystallization in implanted polycrystalline silicon films on SiO2

R. B. Iverson and R. Reif

Appl. Phys. Lett. 52, 645 (1988); http://dx.doi.org/10.1063/1.99392 (3 pages) | Cited 12 times

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Crystallization of 1500 Å polycrystalline silicon films self‐implanted at doses of 2×1015–6×1015 ions/cm2 is investigated. For doses of 2×1015–5×1015 ions/cm2, crystallization is due to the growth of crystallites which nucleate at a rate which decreases with increasing dose. Above 5×1015 ions/cm2, the nucleation rate is comparable to that of amorphous silicon, though a transient time is observed during which little or no nucleation occurs. The growth velocity does not appear to be dose dependent.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.80.Jh Ion radiation effects
64.70.K- Solid-solid transitions

Control of pinholes in epitaxial CoSi2 layers on Si(111)

R. T. Tung and J. L. Batstone

Appl. Phys. Lett. 52, 648 (1988); http://dx.doi.org/10.1063/1.99393 (3 pages) | Cited 44 times

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The growth of ultrathin (<50 Å thick) uniform CoSi2 layers at low temperatures (<450 °C) has been reported recently. Pinholes are formed in these silicide layers when the temperature is raised to above ∼550 °C. An important driving force for the generation of pinholes has been identified as a change of the surface structure from CoSi2‐C, stable at low temperature, to the high‐temperature stable CoSi2‐S. Treatment of the surface of CoSi2 facilitates this transition and prevents the formation of pinholes. A few important parameters in the silicide reaction are shown to govern the morphology of the reacted CoSi2 layers.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.05.Bx Metals, semimetals, and alloys
68.35.Md Surface thermodynamics, surface energies
68.35.Rh Phase transitions and critical phenomena

Electron beam source molecular beam epitaxial growth of analog graded AlxGa1−xAs ballistic transistors

Roger J. Malik and Anthony F. J. Levi

Appl. Phys. Lett. 52, 651 (1988); http://dx.doi.org/10.1063/1.99394 (3 pages) | Cited 1 time

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A new method has been developed for the growth of graded band‐gap AlxGa1−xAs alloys by molecular beam epitaxy which is based upon electron beam evaporation of the group III elements. The metal fluxes are measured and feedback controlled using a modulated ion gauge sensor. The system is computer controlled which allows precise programming of the Ga and Al evaporation rates. The large dynamic response of the metal sources enables growth of variable band‐gap III‐V alloys with arbitrary composition profiles. This new technique is demonstrated by synthesis of analog graded AlxGa1−xAs unipolar ballistic electron transistors.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.30.De Semiconductor-device characterization, design, and modeling
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Electron mobility in p‐type GaAs

M. I. Nathan, W. P. Dumke, K. Wrenner, S. Tiwari, S. L. Wright, and K. A. Jenkins

Appl. Phys. Lett. 52, 654 (1988); http://dx.doi.org/10.1063/1.99395 (3 pages) | Cited 24 times

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The mobility of electrons in p‐type GaAs, μPn has been determined by measuring the common emitter cutoff frequency fT of heterojunction bipolar transistors with a wide, uniformly doped base. At 295 K, μPn =1150 cm2/(V s) is found for a hole concentration of 3.6×1018 cm−3. At 77 K, μPn =6000 cm2/(V s). The room‐temperature value is considerably smaller and the 77 K value considerably larger than the electron mobility in comparably doped n‐type material.
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72.20.Fr Low-field transport and mobility; piezoresistance
85.30.Pq Bipolar transistors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors

Resonant tunneling of electrons of one or two degrees of freedom

S. Y. Chou, E. Wolak, and J. S. Harris

Appl. Phys. Lett. 52, 657 (1988); http://dx.doi.org/10.1063/1.99365 (3 pages) | Cited 14 times

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Analytical expressions for the tunneling current of electrons with one or two degrees of freedom (DOF), due to additional quantum confinement transverse to the electron transport direction, are explicitly derived, analyzed, and implemented into computer simulations. The results are compared with the well‐known case in which 3‐DOF electrons tunnel through a one‐dimensional double‐barrier well. The results show that the singularity of the density of states in a one‐dimensional system will not manifest sharp features in tunneling current, and that when the spacing between the Fermi energy and bottom of conduction band is the same, the tunneling current peak becomes broader and the peak‐to‐valley ratio becomes smaller as the number of degrees of freedom of the electrons is reduced. The results also show that when scattering is neglected, the energy quantization due to transverse confinement in 1‐ or 2‐DOF systems will not contribute any additional peaks to the tunneling current.
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73.40.Gk Tunneling
85.30.De Semiconductor-device characterization, design, and modeling

Novel method to determine capture cross‐section activation energies by deep‐level transient spectroscopy techniques

J. Criado, A. Gomez, E. Calleja, and E. Muñoz

Appl. Phys. Lett. 52, 660 (1988); http://dx.doi.org/10.1063/1.99366 (2 pages) | Cited 31 times

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Deep‐center characterization by deep‐level transient spectroscopy (DLTS) allows a direct determination of the trap thermal emission activation energy. However, capture barrier energy measurements, based on trap partial filling by pulses of increasing width, require a quite different experimental processing and pose some hardware difficulties. In this letter we present a new method to determine the trap capture barrier energy, one that requires constant‐width filling pulses and obtains capture information from standard DLTS data. This technique has been applied to Te‐, Sn‐, and Si‐related DX centers in AlGaAs alloys.
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71.55.Eq III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Shear‐limited flux pinning studied in superconducting thin‐film devices

A. Pruymboom, P. H. Kes, E. van der Drift, and S. Radelaar

Appl. Phys. Lett. 52, 662 (1988); http://dx.doi.org/10.1063/1.99367 (3 pages) | Cited 12 times

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We report critical‐current measurements on superconducting devices containing nanometer‐scale artificially structured channels of low pinning which simulate microstructures in technical superconductors. Our observations uniquely demonstrate the role of the grain morphology for flux pinning in polycrystalline materials. The results are in very good agreement with a continuum model for the shear‐limited pinning force.
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85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
74.78.-w Superconducting films and low-dimensional structures
68.55.-a Thin film structure and morphology
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)

Direct laser writing of superconducting patterns of Y1Ba2Cu3O7−δ

Arunava Gupta and Gad Koren

Appl. Phys. Lett. 52, 665 (1988); http://dx.doi.org/10.1063/1.99368 (2 pages) | Cited 21 times

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Direct argon ion laser writing of 40‐μm‐wide and 3‐μm‐thick superconducting lines of Y1Ba2Cu3O7−δ on magnesium oxide (MgO) substrate is reported. A 514.5 nm laser beam of 300 mW was focused onto a thin sprayed film of the nitrate precursors (Y:Ba:Cu=1:2:3) and scanned over it. The laser beam converted oxides along the irradiation path. The film was then ‘‘developed’’ by rinsing it in ethanol, which removed the unirradiated areas, but left the irradiated areas intact. This was followed by the standard oven annealing procedure in flowing oxygen. The resistivity of the laser‐written lines as a function of temperature showed an onset and completion of the superconducting transition at 82 and 69 K, respectively. The corresponding values of the unpatterned, blanket film were 82 and 77 K, respectively.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
79.20.Ds Laser-beam impact phenomena

Characterization of planar crystal lattice defects in the high‐temperature superconductor YBa2Cu3O7

J. Tafto, M. Suenaga, and R. L. Sabatini

Appl. Phys. Lett. 52, 667 (1988); http://dx.doi.org/10.1063/1.99369 (2 pages) | Cited 20 times

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Transmission electron microscopy shows that sintered YBa2Cu3O7 contains many planar defects in the a‐b plane. They range from stacking faults to 10–100 nm thick sheets of disordered material that extend through the entire crystal grains. The stacking faults may be precursors for the thick layers of disordered material. In this letter we characterize the stacking faults and find that the displacement vector switches from (a/2,0,c/6) to (b/2,0,c/6) as the faults cross the twin boundaries.
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61.72.Nn Stacking faults and other planar or extended defects
61.66.Fn Inorganic compounds
74.70.-b Superconducting materials other than cuprates
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