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29 Feb 1988

Volume 52, Issue 9, pp. 679-761

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Double heterostructure optoelectronic switch as a dynamic memory with low‐power consumption

K. Kasahara, Y. Tashiro, N. Hamao, M. Sugimoto, and T. Yanase

Appl. Phys. Lett. 52, 679 (1988); http://dx.doi.org/10.1063/1.99345 (3 pages) | Cited 38 times

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A pnn double heterostructure optoelectronic switch with dual extractor electrodes was dynamically operated as an optical memory with the resulting achievement of 20 μW holding power. This value represents a reduction in holding power of about three orders of magnitude as compared to that of conventional light‐emitting optical bistable devices. Complete operation, involving optical writing, regeneration, and high‐speed erasing of written data through a dual extractor‐electrodes configuration, was carried out with a simple driving scheme.
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85.60.-q Optoelectronic devices
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)

Yttrium iron garnet single‐mode buried channel waveguides for waveguide isolators

E. Pross, W. Tolksdorf, and H. Dammann

Appl. Phys. Lett. 52, 682 (1988); http://dx.doi.org/10.1063/1.99346 (3 pages) | Cited 20 times

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Magneto‐optic single‐mode buried channel waveguides in substituted yttrium iron garnet suitable for waveguide isolators have been prepared. The channels are fabricated in a three‐step procedure: starting with multiple‐layer planar single‐mode waveguides, rib waveguides are wet etched and then overgrown with top cladding. Such waveguides show mode profiles well matched to that of single mode fibers. In mode conversion experiments, an extinction ratio of 20 dB was obtained. Waveguides coupled to single‐mode fibers on both sides showed an overall insertion loss of about 4 dB.
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42.79.Gn Optical waveguides and couplers
78.20.Ls Magneto-optical effects
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
42.82.-m Integrated optics

Transverse effects and slowing down in the switching dynamics of induced absorption optical bistability

M. Wegener, C. Klingshirn, A. Daunois, J.‐Y. Bigot, N. Cherkaoui Eddeqaqi, and J.‐B. Grun

Appl. Phys. Lett. 52, 685 (1988); http://dx.doi.org/10.1063/1.99347 (3 pages) | Cited 5 times

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The switching dynamics of photothermal‐induced absorption optical bistability is studied in CdS. The bistable element being held near its switching threshold is switched by a pulse of an excimer laser, which can be regarded as δ shaped in time with respect to the thermal relaxation time of the sample. The dynamics of the switching process is influenced by the transverse relaxation of the temperature in the sample. Under appropriate conditions either a slowing down or a fast switching is observed.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.40.Fy Semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

30 ps cavity‐dumped pulses from an argon laser

J. D. Harvey, M. J. Proctor, and C. A. Steed

Appl. Phys. Lett. 52, 688 (1988); http://dx.doi.org/10.1063/1.99348 (3 pages) | Cited 3 times

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The pulse characteristics of a mode‐locked cavity‐dumped argon laser have been investigated by autocorrelation of the pulses using two photon fluorescence, and (when operating at a 13 ns repetition rate) by cross correlation with a synchronously pumped dye laser. The system has been found to yield remarkably short duration pulses. In cavity‐dumped operation at a repetition rate of 3.8 MHz, the laser generates pulses of approximately 30 ps duration and 2.5 kW peak power. It is suggested that the increased bandwidth of this laser compared with that of conventional mode‐locked systems derives from self‐phase modulation in the silica block of the cavity dumper.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

High‐power gain‐guided coupled‐stripe quantum well laser array by hydrogenation

G. S. Jackson, D. C. Hall, L. J. Guido, W. E. Plano, N. Pan, N. Holonyak, and G. E. Stillman

Appl. Phys. Lett. 52, 691 (1988); http://dx.doi.org/10.1063/1.99349 (3 pages) | Cited 15 times

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High‐power coupled‐stripe (ten‐stripe) AlxGa1−xAs‐GaAs quantum well lasers that are fabricated by hydrogenation are described. Continuous (cw) room‐temperature thresholds as low as Ith=90 mA and internal quantum efficiency as high as 85% are demonstrated. Continuous 300 K laser operation generating 2×375 mW (0.75 W) at 910 mA (10Ith) or 57% efficiency is described (8‐μm‐wide stripes on 12 μm centers). Minimal heating effects are observed up to the point of catastrophic failure.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Effect of low‐frequency intensity noise on high‐frequency direct modulation of semiconductor injection lasers

K. Y. Lau and H. Blauvelt

Appl. Phys. Lett. 52, 694 (1988); http://dx.doi.org/10.1063/1.99646 (3 pages) | Cited 8 times

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It was experimentally observed that low‐frequency intensity noise in 1.3 μm semiconductor lasers can be translated to high frequencies through beating with a high‐frequency modulation signal, thus imposing a maximum achievable signal/noise ratio. An analysis of this effect using a formalism developed for treating intermodulation distortion yields good agreement with the experimental results.
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42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Electric field control of optical second‐harmonic generation in a quantum well

L. Tsang, D. Ahn, and S. L. Chuang

Appl. Phys. Lett. 52, 697 (1988); http://dx.doi.org/10.1063/1.99350 (3 pages) | Cited 60 times

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We present theoretical predictions of the second‐harmonic susceptibility due to an intersubband transition within the conduction band of a quantum well in an external applied electric field. The asymmetry of the quantum well due to the electric field accounts for the nonvanishing of the second‐order susceptibilities. It is shown that for moderate values of an applied electric field of 10–70 kV/cm, the second‐harmonic susceptibility is generally 10–100 times larger than that of bulk GaAs. Furthermore, this procedure of second‐harmonic generation can be controlled by an external modulating voltage.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Universal presence of saturable nonradiative currents in six types of 1.3 μm buried heterostructure lasers

Joanne LaCourse and Robert Olshansky

Appl. Phys. Lett. 52, 700 (1988); http://dx.doi.org/10.1063/1.99351 (3 pages)

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Measurement of the carrier lifetime below threshold reveals that the saturable nonradiative current reported previously for 1.3 μm vapor‐phase‐regrowth buried heterostructure lasers is a widespread problem in 1.3 μm InGaAsP buried heterostructure lasers. The saturable nonradiative current represents 10%–30% of the threshold current for most geometries and about 6% for buried crescent lasers. This nonradiative current is also responsible for low spontaneous output at very low currents.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Semi‐insulating current blocking property simulations for buried heterostructure laser diodes

S. Asada, S. Sugou, K. Kasahara, Y. Kato, and S. Kumashiro

Appl. Phys. Lett. 52, 703 (1988); http://dx.doi.org/10.1063/1.99352 (3 pages) | Cited 3 times

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A compound‐semiconductor device simulator, in which deep levels in the semi‐insulating layers can be taken into account, has been developed. By using this simulator, the electrical properties for the semi‐insulating InP buried heterostructure laser diodes were investigated. The leakage current, without passing through the active region, was found to be small when the trap density in the semi‐insulating InP layers is more than 3×1015 cm−3 and less than 1×1016 cm−3. This simulator will be a useful tool in predicting the semi‐insulating properties of electrical and optical semiconductor devices.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors

Optical generation and detection of surface acoustic waves on a sphere

D. Royer, E. Dieulesaint, X. Jia, and Y. Shui

Appl. Phys. Lett. 52, 706 (1988); http://dx.doi.org/10.1063/1.99353 (3 pages) | Cited 22 times

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Surface acoustic waves (SAW’s) have been optically generated and detected on metallic spheres. The source was a focused yttrium aluminum garnet (YAG) laser operated in the Q‐switched mode and the probe was a sensitive optical heterodyne interferometer. The curvature of the surface gives rise to dispersive effects. The variation of the SAW group velocity is deduced from the evolving waveforms of pulses detected after propagating a few turns around the sphere. The observation of SAW pulse waveforms at positions away from the pole (a point diametrically opposite to the source) reveals that the spectral components undergo a π‐phase shift when passing through the pole.
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43.35.Pt Surface waves in solids and liquids

Surface acoustic wave propagation on lead zirconate titanate thin films

K. Sreenivas, M. Sayer, D. J. Baar, and M. Nishioka

Appl. Phys. Lett. 52, 709 (1988); http://dx.doi.org/10.1063/1.99354 (3 pages) | Cited 46 times

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Piezoelectric activity in reactively sputtered lead zirconate titanate [Pb(Zr,Ti)O3 or PZT] thin films has been confirmed through the fabrication of surface acoustic wave delay lines on poled polycrystalline films of PZT deposited on glass substrates. Films of varying thickness ranging from 3.4 to 6 μm show a dispersion in resonant frequency for interdigital transducers designed to resonate at 44 MHz on bulk PZT material. The electromechanical coupling coefficient k2 was in the range 0.57–0.79% for hk=0.21–0.37.
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77.65.-j Piezoelectricity and electromechanical effects
77.55.-g Dielectric thin films
43.35.Pt Surface waves in solids and liquids
43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators

Ion‐induced epitaxial growth of chemical vapor deposited Si layers

A. La Ferla, E. Rimini, and G. Ferla

Appl. Phys. Lett. 52, 712 (1988); http://dx.doi.org/10.1063/1.99355 (3 pages) | Cited 11 times

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Thin layers of Si were chemical vapor deposited onto as‐received 〈100〉 p‐type Si wafers. The samples were subsequently implanted with 1×1015/cm2, 80 keV As. The native oxide film impedes the growth even at 800 °C, 1 h; instead irradiation with 600 keV Kr++ at 450 °C causes the epitaxial growth of the entire deposited and amorphized Si layer. The sheet resistance of these As‐doped layers (130 Ω/☒) coincides with that of samples in which the amorphous layer was obtained by As ion implantation only. The value is at least ten times lower than that of the polycrystalline layer doped with the same amount of As.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.25.+i Surface conductivity and carrier phenomena

Raman scattering in (AlxGa1−x)0.51In0.49P quaternary alloys

Minoru Kubo, Masaya Mannoh, Yasuhito Takahashi, and Mototsugu Ogura

Appl. Phys. Lett. 52, 715 (1988); http://dx.doi.org/10.1063/1.99356 (2 pages) | Cited 14 times

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We report a Raman study of the phonon mode of (AlxGa1−x)0.51In0.49P quaternary alloys lattice matched to GaAs over the whole range of compositions. From the composition dependence of spectra it has been confirmed that the three‐mode behavior of the alloy corresponding to the three binary compositions: AlP‐, GaP‐, and InP‐like phonon modes may occur.
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63.20.D- Phonon states and bands, normal modes, and phonon dispersion
78.30.Fs III-V and II-VI semiconductors
85.60.Jb Light-emitting devices

Electronic structures of strained‐layer superlattices (Si)2n/(Si1−xGex)2n (100) with n=1–10

Dingli Shen, Kaiming Zhang, and Xide Xie

Appl. Phys. Lett. 52, 717 (1988); http://dx.doi.org/10.1063/1.99357 (3 pages) | Cited 7 times

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The empirical tight‐binding method is used to calculate the electronic structures of type II strained‐layer semiconductor superlattices (Si)2n /(Si1−x Gex )2n (100) with n=1–10. The effects of lattice‐constant variation on nearest neighbor interactions have been taken into account. The energy gaps and positions of the conduction‐band minimum are obtained for various number of layers. The effects of band folding and band discontinuity on the gap of Si/Ge are analyzed. The 2DEG (two‐dimensional electron gas) localized in the Si layer can be explained in terms of the change of ΔEc because of structural strain. The strained band agrees quite well with electroreflectance experiment and other calculations. Studies on interface states are also presented.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Equivalence between interface traps in SiO2/Si generated by radiation damage and hot‐electron injection

Yasushiro Nishioka, Eronides F. da Silva, and T. P. Ma

Appl. Phys. Lett. 52, 720 (1988); http://dx.doi.org/10.1063/1.99358 (3 pages) | Cited 10 times

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We have made a comparison between the interface traps generated in the metal/SiO2/Si structure by x‐ray ionizing radiation and Fowler–Nordheim hot‐electron injection, and found very strong similarities between the two. More specifically, the qualitative features of the energy distribution of the interface traps, their post‐damage time‐dependence behavior, and their dependence on the gate bias while being damaged are all very much alike, supporting the notion that the same types of interfacial defects are generated by the two different processes.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.80.Cb X-ray effects
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
61.80.Fe Electron and positron radiation effects

Surface kinetic processes and the morphology of equilibrium GaAs(100) surfaces: A Monte Carlo study

S. B. Ogale, M. Thomsen, and A. Madhukar

Appl. Phys. Lett. 52, 723 (1988); http://dx.doi.org/10.1063/1.99359 (3 pages) | Cited 4 times

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The morphological behavior of model static surfaces of compound semiconductors, as well as dynamic growth fronts relaxing towards their equilibrium behavior upon termination of growth, is studied via Monte Carlo simulations based upon the configuration‐dependent reactive incorporation model. It is found that anion desorption, cation migration, and surface reconstruction play a crucial role in controlling the surface morphology and their interplay can explain the experimentally observed dependence of morphology on the substrate temperature.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
68.35.Fx Diffusion; interface formation

Plasma‐controlled deposition of GaAs and GaAsP by metalorganic chemical vapor deposition

A. D. Huelsman, L. Zien, and R. Reif

Appl. Phys. Lett. 52, 726 (1988); http://dx.doi.org/10.1063/1.99360 (2 pages) | Cited 4 times

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Alternating layers of GaAs and GaAsxP1−x with varying x were grown at low temperatures using a plasma‐enhanced metalorganic chemical vapor deposition process. A remote plasma localized to a region above the substrate was used to selectively dissociate arsine and phosphine and allow GaAs and GaAsxP1−x to be grown at low temperatures where no appreciable deposition takes place without the plasma. This made it possible to use the plasma as a switch to turn deposition on and off. The technique was used to produce very abrupt multiple layers of GaAs and GaAsxP1−x by changing gases when the plasma was off.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Study of the consequence of excess indium in the active channel of InGaAs/InAlAs high electron mobility transistors on device properties

G. I. Ng, D. Pavlidis, M. Quillec, Y. J. Chan, M. D. Jaffe, and J. Singh

Appl. Phys. Lett. 52, 728 (1988); http://dx.doi.org/10.1063/1.99361 (3 pages) | Cited 12 times

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A study of the properties of In0.52Al0.48As/In0.53+xGa0.47−xAs high electron mobility transistors is carried out for 0%, 7%, and 12% excess In values in the channel. Theoretical analysis shows that the enhanced In causes a biaxial compressive strain of 0.49% to 0.84% in the channel, increases the band‐edge discontinuity from 0.437 to 0.500 eV, and reduces the carrier mass by 6%. Experimental characterizations support the theoretical predictions by demonstrating an increase of mobility from 9900 to 11 200 cm2/V s at 300 K, and a transconductance enhancement from 160 to at least 230 mS/mm.
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85.30.De Semiconductor-device characterization, design, and modeling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Dn Low-field transport and mobility; piezoresistance
73.61.Ey III-V semiconductors

Secondary ion mass spectrometry study of ex situ annealing of epitaxial GaAs grown on Si substrates

G. Radhakrishnan, O. McCullough, J. Cser, and J. Katz

Appl. Phys. Lett. 52, 731 (1988); http://dx.doi.org/10.1063/1.99362 (2 pages) | Cited 2 times

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Samples of epitaxial GaAs grown on (100) Si substrates using molecular beam epitaxy were annealed at four different temperatures, from 800 to 950 °C. Following annealing, the samples were analyzed using secondary ion mass spectrometry. Depth profiles of Ga, As, and Si reveal optimum conditions for annealing, and place a lower limit on a damage threshold for GaAs/Si substrates.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Nq Composition and phase identification
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Metalorganic chemical vapor deposition InGaAs p‐i‐n photodiodes with extremely low dark current

M. Gallant, N. Puetz, A. Zemel, and F. R. Shepherd

Appl. Phys. Lett. 52, 733 (1988); http://dx.doi.org/10.1063/1.99363 (3 pages) | Cited 14 times

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Planar, Zn‐diffused InP/InGaAs p‐i‐n photodiodes, which have been fabricated from material grown by metalorganic chemical vapor deposition, have been shown to exhibit extremely low dark current. The typical dark current measured for 100‐μm‐diam devices was 10 pA at −10 V bias, with some devices having values as low as 3 pA (3.8×10−8 A/cm2). Excellent uniformity of the dark current was found. A low capacitance of 0.45 pF, a responsivity at 1.3 μm of 0.90 A/W, and rise/fall times of less than 150 ps were measured at −5 V bias.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Kk Junction diodes
73.50.Pz Photoconduction and photovoltaic effects
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Correlation between electron trap density and hydrogen concentration in ultrathin rapidly reoxidized nitrided oxides

Takashi Hori, Hiroshi Iwasaki, Yoshiaki Yoshioka, and Minoru Sato

Appl. Phys. Lett. 52, 736 (1988); http://dx.doi.org/10.1063/1.99364 (3 pages) | Cited 19 times

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Ultrathin nitrided oxides (8 nm) were reoxidized for the first time by lamp‐heated rapid thermal annealing in dry oxygen at 900–1150 °C for 15–200 s. Extensive measurements of hydrogen concentration [H] using secondary ion mass spectroscopy were performed. Electron trapping was monitored by flatband voltage shift ΔVfb under high‐field stress. Both [H] and the ΔVfb decrease monotonically as reoxidation proceeds in the present experimental conditions. We have found for the first time that the ΔVfb is correlated with the [H] by a single proportional relation regardless of the fabrication condition. This fact gives evidence that the electron traps in the (reoxidized) nitrided‐oxide system originate from hydrogen‐containing species.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ng Insulators
81.65.-b Surface treatments
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Transport measurements of Sb contacts to InP(110)

D. R. T. Zahn, A. B. McLean, R. H. Williams, N. Esser, and W. Richter

Appl. Phys. Lett. 52, 739 (1988); http://dx.doi.org/10.1063/1.99341 (3 pages) | Cited 5 times

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The electrical properties of antimony contacts to vacuum cleaved n‐ and p‐type InP(110) surfaces were studied using current‐voltage and capacitance‐voltage techniques. While the Sb/n‐InP(110) interface forms an ‘‘ohmic’’ contact, an extremely large Schottky barrier was found at Sb/p‐InP(110) contacts.
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73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions

Exact determination of superlattice structures by small‐angle x‐ray diffraction method

M. Sugawara, M. Kondo, S. Yamazaki, and K. Nakajima

Appl. Phys. Lett. 52, 742 (1988); http://dx.doi.org/10.1063/1.99342 (3 pages) | Cited 22 times

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The structure of In1−xGaxAsyP1−y/InP superlattices (x=0.27 and y=0.60) is investigated by small‐angle x‐ray diffraction method. The interference peaks due to the superlattice structure were clearly observed up to the 6th order. The period of the superlattice was determined from the angular positions of the peaks using the modified Bragg’s law. By analyzing the diffraction patterns of the first and the secondary peaks according to the optical multilayer theory, the thickness of each component (In1−xGaxAsyP1−y and InP) was uniquely determined within an error of ±1 Å. This method can be used to determine any type of superlattice structure.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Fx Diffusion; interface formation

Auger study of grain boundaries in large‐grained YBa2Cu3Ox

J. D. Verhoeven, A. J. Bevolo, R. W. McCallum, E. D. Gibson, and M. A. Noack

Appl. Phys. Lett. 52, 745 (1988); http://dx.doi.org/10.1063/1.99334 (3 pages) | Cited 25 times

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A scanning Auger microscopy study has been carried out on fractured surfaces of YBa2Cu3Ox samples prepared by standard sintering procedures from powders. It is concluded that in the large‐grained samples examined, a majority of the grain boundaries are sufficiently ‘‘open’’ that standard metallographic preparation causes them to become contaminated with C. This suggests that an actual loss of contact at the grain boundaries during sample preparation is responsible for the low Jc values observed in bulk‐sized large‐grained YBa2Cu3Ox.
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74.70.-b Superconducting materials other than cuprates
61.72.Mm Grain and twin boundaries
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition

Y‐Ba‐Cu‐O films prepared by a paint‐on method

I. Shih and C. X. Qiu

Appl. Phys. Lett. 52, 748 (1988); http://dx.doi.org/10.1063/1.99335 (3 pages) | Cited 18 times

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Polycrystalline films of Y‐Ba‐Cu‐O with a thickness of about 20–40 μm have been prepared on alumina substrates using a paint‐on method. The liquid source used was obtained by mixing powder of Y2O3, BaCO3, and CuO in liquid triethanolamine. Several Y‐Ba‐Cu‐O films with an onset temperature of about 100 K and a zero resistance temperature of 85 K have been obtained after a short heat treatment at 1000 °C in flowing O2.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
81.40.Rs Electrical and magnetic properties related to treatment conditions
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